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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Photoconductive Semiconductor Switches: Materials, Physics, and Applications

Photoconductive semiconductor switching (PCSS) devices have unique characteristics to address the growing need for electrically isolated, optically gated, picosecond-scale jitter devices capable of operating at high voltage, current, and frequency. The state of the art in material selection, doping, triggering, and system integration in PCSSs is presented. The material properties and doping considerations of GaN, GaAs, SiC, diamond, and β-Ga2O3 in the fabrication of PCSS devices are discussed. A review of the current understanding of the physics of the high-gain mode known as lock-on is presented.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strong-Field Control of Plasmonic Properties in Core–Shell Nanoparticles

Utilization of the plasmonic response in nanosystems is a key component of nanophotonics that is typically altered by varying the incident optical frequency or the material configuration. However, in this work we demonstrate that employing intense, femtosecond laser fields unlock nonlinear light–matter interactions such that precise control of the optical response is achieved solely by adjusting the incident intensity. The plasmonic properties of Au/SiO 2 nanoshells are manipulated by exploiting the nonlinear index of refraction of gold and experimentally observed by employing photoelectrons emitted during the interaction as a sensitive, sub-wavelength probe. A striking transition seen in the photoelectron energy spectrum between the weak and strong-field regime is verified by a modified Mie theory simulation that incorporates the nonlinear dielectric nanoshell response. The exhibited intensity-dependent optical control of the plasmonic response in prototypical core–shell nanoparticles paves the way toward ultrafast switching and opto-electronic signal modulation with more complex nanostructures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Atomic-scale polarization switching in wurtzite ferroelectrics

Ferroelectric wurtzites have the potential to revolutionize modern microelectronics because they are easily integrated with multiple mainstream semiconductor platforms. However, the electric fields required to reverse their polarization direction and unlock electronic and optical functions need substantial reduction for operational compatibility with complementary metal-oxide semiconductor (CMOS) electronics. To understand this process, we observed and quantified real-time polarization switching of a representative ferroelectric wurtzite (Al 0.94 B 0.06 N) at the atomic scale with scanning transmission electron microscopy. The analysis revealed a polarization reversal model in which puckered aluminum/boron nitride rings in the wurtzite basal planes gradually flatten and adopt a transient nonpolar geometry. Independent first-principles simulations reveal the details and energetics of the reversal process through an antipolar phase. Furthermore, this model and local mechanistic understanding are a critical initial step for property engineering efforts in this emerging material class.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Evaluation of Fe-βGa 2 O 3 for Photoconductive Semiconductor Switching

We present iron-doped beta gallium oxide (Fe- β Ga2O3) as a candidate for photoconductive semiconductor switches (PCSSs) with sub-bandgap light. From a commercially available Fe- β Ga2O3 wafer, we first did material characterization. This included measurements of absorption coefficient and dopant composition, carrier activation energy up to 200 °C, break down field of planar electrodes (limited from material passivation), and free carrier recombination lifetime, and thermal effects up to 203 °C on photocurrent with a 447 nm light emitting diode (LED) source. Here, we then demonstrated pulsed operation of a Fe- β Ga2O3 PCSS under different sub-bandgap wavelengths (355, 532, and 1064 nm) and sub-ns pulses. Fe- β Ga2O3 is a candidate for high temperature PCSS with 355 nm responsivity of 7×10 -7 A-cm/W-kV at room temperature and up to 5.5×10 -4 A-cm/W-kV at 200 °C. From these investigations, we discuss a simple trap model to describe the illumination process of the PCSS. Fe- β Ga2O3 has a high breakdown field and has moderate responsivity characteristics, but the dark current at high temperature leads to low photo-to-dark current ratio (PDCR). Regardless, we verify its potential as a PCSS material for harsh environment applications.

42 ENGINEERING↗
DOE OSTI2026

Optical cycling on thorium monoxide for an improved test of fundamental symmetries

Optical cycling refers to repeated excitation and spontaneous emission on an electronic transition in an atom or molecule. Optical cycling in molecules can enable a wide range of quantum control and readout techniques, but unfortunately it has only been demonstrated on a small class of alkalilike or alkaline-earth-like molecules. Thorium monoxide (ThO), a molecule used in one of the most precise permanent electron electric dipole moment (eEDM) searches (ACME†) [Andreev et al., Nature (London) 562, 355 (2018)], does not fall into this category. In this work, we demonstrate the first optical cycling on this nonconventional class over a range of experimental parameter space, including laser intensity, polarization switching rate, and interaction time. We show that both the 𝐽 = 1 and 𝐽 = 2 rotational levels of ThO molecule are capable of cycling an average of 11(2) photons with a single laser, at scattering rates of 1.9⁢(6) × 10 6 and 2.3⁢(7) × 10 6 s −1 , respectively, before population is lost to other vibronic levels. We outline a scheme to apply this demonstrated optical cycling in an ACME-style eEDM measurement, improving the detection efficiency by over fourfold compared to noncycling fluorescence detection. This would lead to over a twofold enhancement in the statistical sensitivity of the eEDM search. This optical-cycling scheme can be further extended to scatter ∼100 photons, which would enable a wider range of quantum control and sensing using ThO molecules.

Atomic & molecular processes in external fields↗
DOE OSTI2025

Manipulating Ferroelectric Topological Polar Structures with Twisted Light

Abstract The dynamic control of non‐equilibrium states represents a central challenge in condensed matter physics. While intense terahertz fields drive metal‐insulator transitions and ferroelectricity via soft phonon modes, recent theory suggests that twisted light with orbital angular momentum (OAM) offers a distinct route to manipulate ferroelectric order and stabilize topological excitations including skyrmions, vortices, and Hopfions. Control of ferroelectric polarization in quasi‐2D CsBiNb 2 O 7 (CBNO) is demonstrated using non‐resonant twisted ultra‐violet (UV) light (375 nm, 800 THz). Combining in situ X‐ray Bragg coherent diffractive imaging (BCDI), twisted optical Raman spectroscopy, and density functional theory (DFT), three‐dimensional (3D) ionic displacements, strain fields, and polarization changes are resolved in single crystals. Operando measurements reveal light‐induced strain hysteresis under twisted light–a hallmark of nonlinear, history‐dependent ferroelastic switching driven by OAM. Discrete, irreversible domain transitions emerge as the topological charge ℓ is cycled, stabilizing non‐trivial domain textures including vortex‐antivortex pairs, Bloch/anti‐Bloch points, and merons. These persist after OAM removal, indicating a memory effect. Competing mechanisms are discussed, including multiphoton absorption, strain‐mediated polarization switching, and defect‐wall interactions. The findings establish structured light as a tool for deterministic, reversible control of ferroic states, enabling optically reconfigurable non‐volatile devices.

Chemistry↗
DOE OSTI2023

Ultrafast Jahn‐Teller Photoswitching in Cobalt Single‐Ion Magnets

Abstract Single‐ion magnets (SIMs) constitute the ultimate size limit in the quest for miniaturizing magnetic materials. Several bottlenecks currently hindering breakthroughs in quantum information and communication technologies could be alleviated by new generations of SIMs displaying multifunctionality. Here, ultrafast optical absorption spectroscopy and X‐ray emission spectroscopy are employed to track the photoinduced spin‐state switching of the prototypical complex [Co(terpy) 2 ] 2+ (terpy = 2,2′:6′,2″‐terpyridine) in solution phase. The combined measurements and their analysis supported by density functional theory (DFT), time‐dependent‐DFT (TD‐DFT) and multireference quantum chemistry calculations reveal that the complex undergoes a spin‐state transition from a tetragonally elongated doublet state to a tetragonally compressed quartet state on the femtosecond timescale, i.e., it sustains ultrafast Jahn‐Teller (JT) photoswitching between two different spin multiplicities. Adding new Co‐based complexes as possible contenders in the search for JT photoswitching SIMs will greatly widen the possibilities for implementing magnetic multifunctionality and eventually controlling ultrafast magnetization with optical photons.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Quantum Sensing of Insulator‐to‐Metal Transitions in a Mott Insulator

Nitrogen vacancy (NV) centers, optically active atomic defects in diamond, have attracted tremendous interest for quantum sensing, network, and computing applications due to their excellent quantum coherence and remarkable versatility in a real, ambient environment. Taking advantage of these strengths, this paper reports on NV-based local sensing of the electrically driven insulator-to-metal transition (IMT) in a proximal Mott insulator. The resistive switching properties of both pristine and ion-irradiated VO 2 thin film devices are studied by performing optically detected NV electron spin resonance measurements. These measurements probe the local temperature and magnetic field in electrically biased VO 2 devices, which are in agreement with the global transport measurement results. In pristine devices, the electrically driven IMT proceeds through Joule heating up to the transition temperature while in ion-irradiated devices, the transition occurs nonthermally, well below the transition temperature. Here, the results provide direct evidence for nonthermal electrically induced IMT in a Mott insulator, highlighting the significant opportunities offered by NV quantum sensors in exploring nanoscale thermal and electrical behaviors in Mott materials.

McLaughlin, Nathan J.↗
DOE OSTI2023

Picosecond Synchronization System for the Distribution of Photon Pairs Through a Fiber Link Between Fermilab and Argonne National Laboratories

Here we demonstrate a three-node quantum network for C-band photon pairs using 2 pairs of 59 km of deployed fiber between Fermi and Argonne National Laboratories. The C-band pairs are directed to nodes using a standard telecommunication switch and the detection system is synchronized to picosecond scale timing resolution using a coexisting O-or L-band optical clock distribution system. We measure a reduction of coincidence to-accidental ratio (CAR) of the C-band pairs from 51 ± 2 to 5.3 ± 0.4 due to Raman scattering of the O-band clock pulses. Despite this reduction, the CAR is nevertheless suitable for quantum networks.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2026

Ultra Wide Bandgap Laser Addressable Photoconductors

Wide Band Gap (WBG) and Ultra Wide Band Gap (UWBG) photoconductors have the potential to meet several critical mission needs for LLNL and the broader USG due to their exceptional characteristics related to large critical electric field. In particular, high energy laser systems such as the National Ignition Facility would benefit from the development of new materials for active optical devices such as the Optically Addressable Light Valve (OALV) used in the Programmable Spatial Shaper System. Missions in Global Security would benefit from higher performance Photoconductive Semiconductor Switches for pulsed power and radiofrequency amplifiers. This project examined the suitability of both commercially available and custom synthesized semi insulating WBG and UWBG materials for several of these applications. We developed high laser damage threshold OALVs for optical systems based on several of these materials as well as new RF, pulsed power, and power electronics devices based on the same. These devices show superior power handling in terms of laser damage threshold, electric field, and power output. A number of the technologies developed have been transitioned to both internal and external customers.

42 ENGINEERING↗
DOE OSTI2022

Beam steering at the nanosecond time scale with an atomically thin reflector

Techniques to mold the flow of light on subwavelength scales enable fundamentally new optical systems and device applications. The realization of programmable, active optical systems with fast, tunable components is among the outstanding challenges in the field. Here, we experimentally demonstrate a few-pixel beam steering device based on electrostatic gate control of excitons in an atomically thin semiconductor with strong light-matter interactions. By combining the high reflectivity of a MoSe 2 monolayer with a graphene split-gate geometry, we shape the wavefront phase profile to achieve continuously tunable beam deflection with a range of 10°, two-dimensional beam steering, and switching times down to 1.6 nanoseconds. Our approach opens the door for a new class of atomically thin optical systems, such as rapidly switchable beam arrays and quantum metasurfaces operating at their fundamental thickness limit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Ferroelectric and Charge Transport Properties in Strain-Engineered Two-Dimensional Lead Iodide Perovskites

Transitions from three-dimensional (3D) hybrid organic–inorganic perovskite (HOIP) structures to lower dimensions including 2D and quasi-2D structures open a new range of functional properties in these materials systems. Yet, the performance of solar cells made from 2D HOIP is below that of the 3D compositions due to the higher band-gap energy, low carrier concentration, and anisotropy in charge transport. Controlling ferroelectricity in 2D HOIPs is considered to be a powerful strategy to drive the spatial separation of photogenerated charge carriers to improve the photovoltaic action in this class of HOIPs. Here, we explore the strain-dependent ferroelectricity and charge carrier properties in strain-engineered 2D-layered HOIPs utilizing advanced scanning probe microscopy (SPM) techniques. Band excitation-piezoresponse force microscopy (BE-PFM) and contact Kelvin probe force microscopy (cKPFM) reveal ferroelectric domains and switchable dynamics with significantly low switching voltages in the low-strain film. Photoluminescence (PL) spectroscopy shows strain-dependent optical properties and a noncentrosymmetric structure with strong second-harmonic generation (SHG) peaks in the low-strain film. In addition, KPFM results demonstrate a higher surface potential in the low-strain films, while the photovoltage and local current are the highest on the high-strain film. Furthermore, our study demonstrates the critical role of strain engineering on the electromechanical and charge carrier dynamics in 2D HOIPs, which is important for development of 2D HOIP devices.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Rhodol fluorophores for near-infrared imaging

The present disclosure encompasses embodiments of a novel near-infrared-emitting molecular fluorophore and probes incorporating said fluorophore advantageous for in vitro and in vivo research studies. The fluorophore is robust, photostable, and possesses functionalities for easy bioorthogonal conjugation (e.g., click chemistry, hydrazone formation, Diels Alder, Staudinger ligation, etc.). It is biocompatible and emits at 711 nm in aqueous conditions. These fluorophores may be used to fluorescently tag biological molecules or structures of interest, or used as optical reporters (i.e., activatable molecular probes, fluorescent dyes) for specific biomarkers/analytes as they can be switched from “off” to “on.” This fluorophore is useful for cellular assays and preclinical small animal imaging as the near-infrared emission is highly penetrating, and the photophysical properties are outstanding. As such, the properties of this class of fluorophores could easily be translated for use in clinical applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Bending effects and optical properties of WSe 2 nanoribbons of topological phase

A WSe 2 monolayer of 1T' phase is a large band gap quantum spin Hall insulator, supporting dissipationless charge and spin transports through the topologically protected edge states. Here, in this work, we explore the nanoribbon forms of 1T' phase WSe 2 by first-principles density functional calculations and the many-body perturbation GW and Bethe-Salpeter equation method. We found that the 1T' WSe 2 nanoribbon can show topological edge states with a ribbon width of ~4-6 nm. Those edge bands show crossing through the Fermi level an odd number of times, with one kind of spin-polarization connecting the valence band continuum and conduction band continuum. The topological features of the edge bands hold even under small and medium bending in the nanoribbon, while large bending induces large band splitting, resulting in a topological switch-off in the edge bands. The semiconducting 1T' WSe2 nanoribbon shows a large tunability with bending in optical absorption spectra and exciton states. The lowest-energy exciton is changed from optically dark in the flat nanoribbon to bright in the bent nanoribbons. These properties in the 1T' WSe 2 nanoribbons suggest potential applications in controllable quantum electronics and exciton-based quantum information processes.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Octahedral to tetrahedral bonding transitions in the local structure of phase change optical media Ge 2 Sb 2 Se 5 x Te 5-5 x with Se doping

Random access memories utilize fast, reversible switching between ordered and disordered states of matter in phase change materials (PCMs) such as Ge2Sb2Te5-5x. The short-range structure in the disordered phase has been described either as (i) a network of Ge tetrahedra or (ii) Peierls distorted Ge/Sb octahedra. The PCM transition was investigated in bulk Ge2Sb2Se5xTe5-5x (GSST), in which amorphization sets in with Se doping (x ≈ 0.85) upon quenching. GSST has a hexagonal crystalline ground state with Ge/Sb octahedral coordination, but the phase change transition to the amorphous state that is only observed when the system is quenched brings a short-range structure with sharp, tetrahedrally coordinated Ge/Sb correlations and shortened bonds that are distinctly different from the expected octahedral pairing.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Micropulse Lidar Cloud Mask (MPLCMASK) Value-Added Product for the Fast-Switching Polarized Micropulse Lidar Technical Report

Lidar backscattered signal is a useful tool for identifying vertical cloud structure in the atmosphere in optically thin clouds. Cloud boundaries derived from lidar signals are a necessary input for popular ARM data products, such as the Active Remote Sensing of Clouds (ARSCL) product. An operational cloud boundary algorithm (Wang and Sassen 2001) has been implemented for use with the ARM Micropulse Lidar (MPL) systems. In addition to retrieving cloud boundaries above 500 m, the value-added product (VAP) named Micropulse Lidar Cloud Mask (MPLCMASK) applies lidar-specific corrections (i.e., range-square, background, deadtime, and overlap) as described in Campbell et al. (2002) to the measured backscattered lidar. Depolarization ratio is computed using the methodology developed by Flynn et al. (2007) for polarization-capable MPL systems. The cloud boundaries output from MPLCMASK will be the primary lidar cloud mask for input to the ARSCL product and will be applied to all MPL systems, including historical data sets.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2023

The Recent Improvements of the SNS Extraction Kicker Power Supplies

A total of 14 extraction kickers., with one as the hot spare., are in service to extract protons out of the storage ring at the SNS. The jitter issue and the short lifetime of the switches were resolved after the thyratrons were replaced with solid state switches in 2018. This paper discusses the recent improvements. Two thyristor switches suffered overheating damage in separate incidents. One was due to the oil pump failure and the other was the result of a disconnected oil hose. An ultrasonic flow meter and a fiber optic temperature monitoring system have been installed for each extraction kicker power supply. The flow meter continuously monitors the entire tank oil flow. The temperature monitor detects the thyristor switch real-time temperatures in three locations. Fault thresholds are selected so that the thyristor switches are protected from overheating damage. Alarms are configured to alert staff to take actions before faults occur. In addition., the cause of an intermittent misfire issue was identified, and the solution was implemented. Lastly., a future oscilloscope upgrade and an oil level sensor are discussed.

Tan, Yugang↗
DOE OSTI2022

Remote surface optical phonon scattering in ferroelectric Ba 0.6 Sr 0.4 TiO 3 gated graphene

We report the effect of remote surface optical (RSO) phonon scattering on carrier mobility in monolayer graphene gated by ferroelectric oxide. We fabricate monolayer graphene transistors back-gated by epitaxial (001) Ba 0.6 Sr 0.4 TiO 3 films, with field effect mobility up to 23 000 cm 2 V –1 s –1 achieved. Switching ferroelectric polarization induces nonvolatile modulation of resistance and quantum Hall effect in graphene at low temperatures. Ellipsometry spectroscopy studies reveal four pairs of optical phonon modes in Ba 0.6 Sr 0.4 TiO 3 , from which we extract RSO phonon frequencies. The temperature dependence of resistivity in graphene can be well accounted for by considering the scattering from the intrinsic longitudinal acoustic phonon and the RSO phonon, with the latter dominated by the mode at 35.8 meV. Furthermore, our study reveals the room temperature mobility limit of ferroelectric-gated graphene transistors imposed by RSO phonon scattering.

36 MATERIALS SCIENCE↗