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Mg is Hg_xSn structured and crystallizes in the hexagonal P6/mmm space group. The structure is three-dimensional. Mg is bonded to eight equivalent Mg atoms to form a mixture of edge and corner-sharing MgMg8 hexagonal bipyramids. There are six shorter (3.06 Å) and two longer (3.16 Å) Mg–Mg bond lengths.
Mg crystallizes in the tetragonal I4/mmm space group. The structure is three-dimensional. Mg is bonded in a distorted body-centered cubic geometry to ten equivalent Mg atoms. There are eight shorter (3.09 Å) and two longer (3.40 Å) Mg–Mg bond lengths.
Mg is Copper structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Mg is bonded to twelve equivalent Mg atoms to form a mixture of face, edge, and corner-sharing MgMg12 cuboctahedra. All Mg–Mg bond lengths are 3.19 Å.
The optimal fraction of Mg incorporation in sputter-deposited Mg X Zn 1−X O (MZO) emitters for thin-film CdTe-based solar cells is evaluated by varying it over a range of x from 0 to 0.35. This range allows a variation in the conduction band offset from −0.1 eV (cliff like) to +0.32 eV (spike like). Here, a maximum efficiency of 18.5% for cells with the bilayer CdSeTe/CdTe absorber occurs at x = 0.15, which corresponds to a spike-like band offset near 0.2 eV, as confirmed by X-ray photoelectron spectroscopy. In addition, good cell performance is seen over a fairly broad range of x extending from 0.1 to 0.25. The MZO optical bandgap increases with the Mg fraction, consistent with an increasing conduction band offset. Temperature-dependent current−voltage measurements and time-resolved photoluminescence show improvement in the emitter/absorber interface with the incorporation of Mg. Capacitance−voltage measurements show that the depletion region extends further into the absorber with more Mg, and X-ray diffraction confirms a change from a hexagonal-dominant crystal structure toward zinc blende at x = 0.35.
While rare-earth Mg alloys have remarkable properties for high strength applications, lower cost alternatives are necessary for the widespread industry use of Mg. Ca added Mg alloys have shown promise as an alternative to rare-earth alloys. Ca-based precipitates can reduce basal texture, reduce casting porosity, and increase mechanical strength. However, the accumulation of Ca-based precipitates along inter-dendritic regions can severely limit ductility. Here, we apply two solid phase processing techniques, friction stir processing and shear assisted processing and extrusion, to produce wrought microstructure sheet and extruded tubes from a cast Mg-Al-Mn-Ca alloy. Ductility of the alloy is enhanced by densification under applied force and elevated temperature, grain refinement, and refinement of (Al,Mg)-Ca based precipitate.
The exothermic reactions in the ZrF 4 –Mg-Si and ZrF 4 -Al-Si systems are investigated by a fast temperature recording (thermocouple) technique, differential scanning calorimetry (DSC), and thermogravimetric analysis (TGA). A quenching method is used to arrest the combustion process and conduct a layer-by-layer analysis of the products by x-ray diffraction (XRD) and electron microscopy. Two seemingly similar reactive systems exhibited considerably different combustion characteristics, composition, and morphology. Based on these investigations, we propose and discuss phase formation mechanisms at the early stages for each system. Three different pathways involving the reaction of ZrF 4 with other reagents and the Mg 2 Si intermediate are identified to occur in the ZrF 4 –Mg-Si system. Contrary to the complex mechanism in the ZrF 4 –Mg-Si system, the early stage of the combustion process for the ZrF 4 -Al-Si system involves the interaction of ZrF 4 with Al-Si eutectic melt. The exothermic reaction between reduced solid Zr and Si melt is the primary heat-generating step for both systems in spite of substantial differences in the early stages of the reactions. The silicon content in the reactive mixtures governs the phase composition of products. The ZrSi 2 phase, with a high growth rate, forms first on the Zr particle surfaces and then grows by a reactive diffusion mechanism. The ZrSi 2+ Zr reaction produces silicon-lean phases (e.g., ZrSi) when the silicon supply is limited. The combustion temperature also has a considerable influence on the phase compositions of the products. High combustion temperature in the ZrF 4 +2Mg+Si mixture enables the formation of multiphase products (α-ZrSi and β-ZrSi), whereas the relatively lower temperatures in the 3ZrF 4 +4Al+3Si mixture yields a single-phase α-ZrSi. As a result, lower combustion temperatures also make the ZrF 4 -Al-Si system more advantageous for the preparation of zirconium silicides.
Metal sulfide ion exchange materials (MSIEs) are of interest for nuclear waste remediation applications. Here, we report the high stability of two structurally related metal sulfide ion exchange materials, Na 2x Mg 2y–x Sn 4–y S 8 (Mg-NMS) and Na 2 SnS 3 (Na-NMS), in strongly acid media, in addition to the preparation of Na 2x Ni 2y–x Sn 4–y S 8 (Ni-NMS). Their formation progress during synthesis is studied with in-situ methods, with the target phases appearing in <15 min, reaction completion in <12 h, and high yields (75–80%). Upon contact with nitric or hydrochloric acid, these materials topotactically exchange Na + for H + , proceeding in a stepwise protonation pathway for Na 5.33 Sn 2.67 S 8 . Na-NMS is stable in 2 M HNO 3 and Mg-NMS is stable in 4 M HNO 3 for up to 4 h, while both NMS materials are stable in 6 M HCl for up to 4 days. However, the treatment of Mg-NMS and Na-NMS with 2–6 M H 2 SO 4 reveals a much slower protonation process since after 4 h of contact both NMS and HMS are present in the solution. The resultant protonated materials, H 2x Mg 2y–x Sn 4–y S 8 and H 4x [(H y Na y–1 ) 1.33x Sn 4––1.33x ]S 8 , are themselves solid acids and readily react with and intercalate a variety of organic amines, where the band gap of the resultant adduct is influenced by amine choice and can be tuned within the range of 1.88(5)–2.27(5) eV. The work function energy values for all materials were extracted from photoemission yield spectroscopy in air (PYSA) measurements and range from 5.47 (2) to 5.76 (2) eV, and the relative band alignments of the materials are discussed. DFT calculations suggest that the electronic structure of Na 2 MgSn 3 S 8 and H 2 MgSn 3 S 8 makes them indirect gap semiconductors with multi-valley band edges, with carriers confined to the [MgSn 3 S 8 ] 2– layers. Light electron effective masses indicate high electron mobilities.
Synthetic Mg 2 TiO 4 qandilite was investigated to 50 and 40.4 GPa at room temperature using Raman spectroscopy and X-ray diffraction, respectively. The Raman measurements showed that cubic Mg 2 TiO 4 spinel transforms to a high pressure tetragonal (I4 1 /amd, No.141) phase at 14.7 GPa. Owing to sluggish kinetics at room temperature, the spinel phase coexists with the tetragonal phase between 14.7 and 24.3 GPa. In the X-ray diffraction experiment, transformation of the cubic Mg 2 TiO 4 to the tetragonal structure was complete by 29.2 GPa, ~5 GPa higher than the transition pressure obtained by Raman measurements, owing to slow kinetics. The obtained isothermal bulk modulus of Mg 2 TiO 4 spinel is K T0 = 148(3) GPa when K T0 ’ = 6.6, or K T0 = 166(1) GPa when K T0 ’ is fixed at 4. The isothermal bulk modulus of the high-pressure tetragonal phase is calculated to be 209(2) GPa and V 0 = 270(2) Å 3 when K T0 ’ is fixed at 4, and the volume reduction on change from cubic to tetragonal phase is about 9%. The calculated thermal Grüneisen parameters (γ th ) of cubic and tetragonal Mg 2 TiO 4 phases are 1.01 and 0.63. Based on the radii ratio of spinel cations, a simple model is proposed to predict post-spinel structures.
With the goal of developing a Si-based anode for Mg-ion batteries (MIBs) that is both efficient and compatible with the current semiconductor industry, the current research utilized classical Molecular Dynamics (MD) simulation in investigating the intercalation of a Mg 2+ ion under an external electric field (E-field) in a 2D bilayer silicene anode (BSA). First principles density functional theory calculations were used to validate the implemented EDIP potentials. Our simulation shows that there exists an optimum E-field value in the range of 0.2–0.4 V Å –1 for Mg 2+ intercalation in BSA. To study the effect of the E-field on Mg 2+ ions, an exhaustive spread of investigations was carried out under different boundary conditions, including calculations of mean square displacement (MSD), interaction energy, radial distribution function (RDF), and trajectory of ions. Our results show that the Mg 2+ ions form a stable bond with Si in BSA. The effects of E-field direction and operating temperature were also investigated. In the X–Y plane in the 0°–45° range, 15° from the X-direction was found to be the optimum direction for intercalation. The results of this work also suggest that BSA does not undergo drastic structural changes during the charging cycles with the highest operating temperature being ~300 K
Gallium oxide (Ga 2 O 3 ) is being actively explored for electronics that can operate at high power, temperature, and frequency as well as for deep-ultraviolet optoelectronics and other applications due to its ultra-wide bandgap (UWBG) and low projected fabrication cost of large-size and high-quality crystals. Efficient n-type doping of monoclinic beta-phase of Ga 2 O 3 has been achieved, but p-type doping faces fundamental obstacles due to compensation, deep acceptor levels, and the polaron transport mechanism of free holes. However, aside from the challenges of achieving p-type conductivity, plenty of opportunity exists to engineer the position of the Fermi level for improved design of Ga 2 O 3 -based devices. We use first-principles defect theory and defect equilibrium calculations to simulate a three-step growth-annealing-quench synthesis protocol for hydrogen-assisted Mg doping in ß-Ga 2 O 3 . The simulations take into account the gas phase equilibrium between H 2 , O 2 , and H 2 O, which determines the H chemical potential. We predict Ga 2 O 3 doping-type conversion to a net p-type regime after growth under reducing conditions in the presence of H2 followed by O-rich annealing, which is a similar process to Mg acceptor activation by H removal in GaN. For equilibrium annealing with re-equilibration of compensating O vacancies, there is an optimal temperature that maximizes the Ga 2 O 3 net acceptor density for a given Mg doping level; the acceptor density is further increased in the non-equilibrium annealing scenario without re-equilibration. After quenching to operating temperature, the Ga 2 O 3 Fermi level drops below mid-gap down to about 1.5 eV above the valence band maximum, creating a significant number of uncompensated neutral Mg Ga 0 acceptors. The resulting free hole concentration in Ga 2 O 3 is very low even at elevated operating temperature (~10 8 cm -3 at 400°C) due to the deep energy level of these Mg acceptors, and hole conductivity is further impeded by the polaron hopping mechanism. However, the Fermi-level reduction and suppression of free electron density in this doping-type converted (NA>ND) Ga 2 O 3 material are important for improved designs of Ga 2 O 3 electronic devices. These results illustrate the power of computational predictions not only for new materials but also for their synthesis science.
In this work, photoionization of the free and confined Mg (Mg@C 60 ) have been calculated in the vicinity of the inner-shell 2p thresholds using R -matrix at the Breit–Pauli R -matrix level with a particular emphasis on the various resonance series leading up to the two lowest inner-shell thresholds and the changes resulting from the confinement. For free Mg, the calculated resonance positions agree well with NIST values, and a number of new resonances are identified. For confined Mg, the calculation was done for various depths of the confining potential well in order to follow the trajectories of the resonances as a function of well depth. The results for the well depth corresponding to Mg@C 60 showed that most of the resonances moved to higher photon energy, as a result of the confinement, but a few moved to lower energies. This phenomenology was found to result from the fact that the 3p, 3d and 4s excitations are trapped by the confining potential well, while the higher excitations were not.
ABSTRACT We present long-slit spectroscopic observations of 40 Galaxy On Top of Quasars (GOTOQs) at ${0.37 \leqslant z \leqslant 1.01}$ using the South African Large Telescope. Using this and available photometric data, we measure the impact parameters of the foreground galaxies to be in the range of 3–16 kpc with a median value of 8.6 kpc. This is the largest sample of galaxies producing Mg ii absorption at such low impact parameters. These quasar–galaxy pairs are ideal for probing the disc–halo interface. At such impact parameters, we do not find any anticorrelation between rest equivalent width (REW) of Ca ii, Mn ii, Fe ii, Mg ii, and Mg i absorption and impact parameter. These sight lines are typically redder than those of strong Mg ii absorbers, with the colour excess, E(B − V) for our sample ranging from −0.191 to 0.422, with a median value of 0.058. In the E(B − V) versus W3935 plane, GOTOQs occupy the same region as Ca ii absorbers. For a given E(B − V), we find larger W3935 than what has been found in the Milky Way, probably due to a smaller dust-to-gas ratio in GOTOQs. Galaxy parameters could be measured for twelve cases, and their properties seem to follow the trends found for strong Mg ii absorbers. Measuring the host galaxy properties for the full sample using HST photometry or AO-assisted ground-based imaging is important to gain insights into the relationship between the stellar mass of galaxies and the metal line REW distributions at low impact parameters.
In the island of inversion, ground states of neutron-rich sd-shell nuclei exhibit strong admixtures of intruder configurations from the fp shell. The nucleus 30 Mg, located at the boundary of the island of inversion, serves as a cornerstone to track the structural evolution as one approaches this region. Spin-parity assignments for excited states in 30 Mg, especially negative-parity levels, have yet to be established. In the present work, the nuclear structure of 30Mg was investigated by in-beam gamma-ray spectroscopy mainly focusing on firm spin-parity determinations. High-intensity rare-isotope beams of 31 Mg, 32 Mg, 34 Si, and 35 P bombarded a Be target to induce nucleon removal reactions populating states in 30 Mg. Gamma rays were detected by the state-of-the-art gamma-ray tracking array GRETINA. For the direct one-neutron removal reaction, final-state exclusive cross sections and parallel momentum distributions were deduced. Multi-nucleon removal reactions from different projectiles were exploited to gain complementary information. With the aid of the parallel momentum distributions, an updated level scheme with revised spin-parity assignments was constructed. Spectroscopic factors associated with each state were also deduced. Results were confronted with large-scale shell-model calculations using two different effective interactions, showing excellent agreement with the present level scheme. Furthermore, a marked difference in the spectroscopic factors indicates that the full delineation of the transition into the island of inversion remains a challenge for theoretical models.
Background: The nucleus 32 Mg (N=20 and Z=12) plays a central role in the so-called “island of inversion,” where in the ground states sd-shell neutrons are promoted to the fp-shell orbitals across the shell gap, resulting in the disappearance of the canonical neutron magic number N=20. Purpose: The primary goals of this work are to extend the level scheme of 32Mg, provide spin-parity assignments to excited states, and discuss the microscopic structure of each state through comparisons with theoretical calculations. Method: In-beam γ-ray spectroscopy of 32 Mg was performed using two direct-reaction probes: one-neutron (two-proton) knockout reactions on 33 Mg ( 34 Si). Final-state exclusive cross sections and parallel momentum distributions were extracted from the experimental data and compared with eikonal-based reaction model calculations combined with shell-model overlap functions. Results: Owing to the remarkable selectivity of the one-neutron and two-proton knockout reactions, a significantly updated level scheme for 32 Mg, which exhibits negative-parity intruder and positive-parity normal states, was constructed. The experimental results were confronted with four different nuclear structure models. Conclusions: In some of these models, different aspects of 32 Mg and the transition into the island of inversion are well described. However, unexplained discrepancies remain, and, even with the help of these state-of-the-art theoretical approaches, the structure of this key nucleus is not yet fully captured.
The interplay between the 22 Ne (α,γ) 26 Mg reaction and the competing 22 Ne (α,n) 25 Mg reaction determines the efficiency of the latter as a neutron source at the temperatures of stellar helium burning. In both cases, the rates are dominated by the α-cluster resonance at 830 keV. This resonance plays a particularly important role in determining the strength of the neutron flux for both the weak and main s process as well as the n process. Recent experimental studies based on transfer reactions suggest that the neutron and γ-ray strengths for this resonance are approximately equal. In this study, the 22 Ne (α,n) 25 Mg resonance strength has been remeasured and found to be similar to the previous direct studies. Finally, this reinforces an 830 keV resonance strength that is approximately a factor of 3 larger for the 22 Ne (α,n) 25 Mg reaction than for the 22 Ne (α,γ) 26 Mg reaction.
Here we present an ab initio prediction of an order-disorder transition (ODT) from a I¯42d-type to Th 3 P 4 -type phase in the cation sublattices of Mg 2 GeO 4 , a post-post-perovskite phase. This uncommon type of prediction is achieved by carrying out a high-throughput sampling of atomic configurations in a 56-atom supercell followed by a Boltzmann ensemble statistics calculation. Mg 2 GeO 4 is a low-pressure analog of I¯42d-type Mg 2 SiO 4 , a predicted major planet-forming phase of super-Earths' mantles. Therefore, a similar ODT is anticipated in I¯42d-type Mg 2 SiO 4 as well, which should impact the internal structure and dynamics of these planets. Furthermore, the prediction of this Th 3 P 4 -type phase in Mg 2 GeO 4 further enhances the relationship between the crystal structures of Earth/planet-forming silicates and oxides at extreme pressures and those of rare-earth sesquisulfides at low pressures.
In this work, we demonstrate a method to achieve selectively patterned Mg-doped GaN layers using hydrogen drive-in through plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN x ) films. Activated Mg-doped GaN layers were selectively deactivated by patterned PECVD SiN x films with low-temperature annealing and showed high-resistive behavior. Spatially resolved photoluminescence measurements were used to optically verify the deactivation of Mg acceptors and showed distinct features corresponding to activated and deactivated Mg in GaN. The method suggested here provides a simple and effective method to achieve patterned Mg-doped GaN regions without thermal and plasma damage, which could cause degradation of device performance. The proposed method could provide a way to achieve future high-performance GaN lateral and vertical devices that rely on laterally patterned doping.
Highly reversible Mg plating/stripping is key for rechargeable Mg batteries and has typically been successfully demonstrated using transient electrochemical techniques such as cyclic voltammetry measurements. Furthermore, little effort has been invested in studying the stability of the electrode/electrolyte interface over an extended time. We report here the development of an in situ generated surface film for Mg anodes based on electrodeposited bismuth (E_Bi). This film improves the interfacial stability of Mg in contact with the electrolyte, particularly over an extended time, and possesses fast charge-transfer kinetics (<30 Ω∙cm 2 ) and low non-time-sensitive interfacial film resistance (ca. 5 Ω∙cm 2 ) for active Mg species.