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At least 217 records · Page 12

All sources NASA NTRS DOE OSTI

DOE OSTI2019

Thread Batching for High-performance Energy-efficient GPU Memory Design

Massive multi-threading in GPU imposes tremendous pressure on memory subsystems. Due to rapid growth in thread-level parallelism of GPU and slowly improved peak memory bandwidth, memory becomes a bottleneck of GPU’s performance and energy efficiency. In this article, we propose an integrated architectural scheme to optimize the memory accesses and therefore boost the performance and energy efficiency of GPU. First, we propose a thread batch enabled memory partitioning (TEMP) to improve GPU memory access parallelism. In particular, TEMP groups multiple thread blocks that share the same set of pages into a thread batch and applies a page coloring mechanism to bound each stream multiprocessor (SM) to the dedicated memory banks. After that, TEMP dispatches the thread batch to an SM to ensure high-parallel memory-access streaming from the different thread blocks. Second, a thread batch-aware scheduling (TBAS) scheme is introduced to improve the GPU memory access locality and to reduce the contention on memory controllers and interconnection networks. Experimental results show that the integration of TEMP and TBAS can achieve up to 10.3% performance improvement and 11.3% DRAM energy reduction across diverse GPU applications. We also evaluate the performance interference of the mixed CPU+GPU workloads when they are run on a heterogeneous system that employs our proposed schemes. Our results show that a simple solution can effectively ensure the efficient execution of both GPU and CPU applications.

Computer Science↗

DOE OSTI2019

Evaluating the effectiveness of program data features for guiding memory management

Recent trends have led to the adoption of larger and more complex memory systems, often with multiple tiers of memory performance within the same platform. To utilize complex memory systems efficiently, current data management strategies must be altered to map usage demands to the underlying hardware. Applications, as the generators of memory accesses, are well-suited to guide this process, but building and maintaining separate source code versions for different memory systems is not feasible in most cases. One potential solution is to employ automated program profiling and analysis to facilitate the production of application-based guidance. By attaching memory usage information to static or lightweight program features, compilers and runtime systems can generate fine-grained guidance without additional efforts from users or developers. Recent works have employed this approach with some success, but it is not clear which program features are most useful for guiding data management.This work evaluates the effectiveness of using different program data features to predict memory usage and guide memory management. It employs a custom set of simulation tools, based in the Intel® Pin framework, to collect and analyze the usage characteristics of application data associated with common program data features, such as allocation sites, types, and context. The results show that even relatively simple features, such as object size, are useful for selecting data with similar usage properties, but finer-grained features, such as the instructions that access a particular object, are often much more effective. Additionally, this work evaluates the performance of using different data features and different program inputs to guide data placement on a heterogeneous memory platform with a limited amount of high performance memory.

Effler, T. Chad↗

DOE OSTI2013

Active Measurement of Memory Resource Consumption

Hierarchical memory is a cornerstone of modern hardware design because it provides high memory performance and capacity at a low cost. However, the use of multiple levels of memory and complex cache management policies makes it very difficult to optimize the performance of applications running on hierarchical memories. As the number of compute cores per chip continues to rise faster than the total amount of available memory, applications will become increasingly starved for memory storage capacity and bandwidth, making the problem of performance optimization even more critical. We propose a new methodology for measuring and modeling the performance of hierarchical memories in terms on the application’s utilization of the key memory resources: capacity of a given memory level and bandwidth between two levels. This is done by actively interfering with the application’s use of these resources. The application’s sensitivity to reduced resource availability is measured by observing the effect of interference on application performance. The resulting resource-oriented model of performance both greatly simplifies application performance analysis and makes it possible to predict an application’s performance when running with various resource constraints. This is useful to predict performance for future memory-constrained architectures.

97 MATHEMATICS AND COMPUTING↗

NASA NTRS1976

Shared memory for a fault-tolerant computer

A system is described for sharing a memory in a fault-tolerant computer. The memory is under the direct control and monitoring of error detecting and error diagnostic units in the fault-tolerant computer. This computer verifies that data to and from the memory is legally encoded and verifies that words read from the memory at a desired address are, in fact, actually delivered from that desired address. The means are provided for a second processor, which is independent of the direct control and monitoring of the error checking and diagnostic units of the fault-tolerant computer, and to share the memory of the fault-tolerant computer. Circuitry is included to verify that: (1) the processor has properly accessed a desired memory location in the memory; (2) a data word read-out from the memory is properly coded; and (3) no inactive memory was erroneously outputting data onto the shared memory bus.

Gilley, G. C.↗

NASA NTRS1988

Sparse distributed memory prototype: Principles of operation

Sparse distributed memory is a generalized random access memory (RAM) for long binary words. Such words can be written into and read from the memory, and they can be used to address the memory. The main attribute of the memory is sensitivity to similarity, meaning that a word can be read back not only by giving the original right address but also by giving one close to it as measured by the Hamming distance between addresses. Large memories of this kind are expected to have wide use in speech and scene analysis, in signal detection and verification, and in adaptive control of automated equipment. The memory can be realized as a simple, massively parallel computer. Digital technology has reached a point where building large memories is becoming practical. The research is aimed at resolving major design issues that have to be faced in building the memories. The design of a prototype memory with 256-bit addresses and from 8K to 128K locations for 256-bit words is described. A key aspect of the design is extensive use of dynamic RAM and other standard components.

Flynn, Michael J.↗

NASA NTRS1989

A class Hierarchical, object-oriented approach to virtual memory management

The Choices family of operating systems exploits class hierarchies and object-oriented programming to facilitate the construction of customized operating systems for shared memory and networked multiprocessors. The software is being used in the Tapestry laboratory to study the performance of algorithms, mechanisms, and policies for parallel systems. Described here are the architectural design and class hierarchy of the Choices virtual memory management system. The software and hardware mechanisms and policies of a virtual memory system implement a memory hierarchy that exploits the trade-off between response times and storage capacities. In Choices, the notion of a memory hierarchy is captured by abstract classes. Concrete subclasses of those abstractions implement a virtual address space, segmentation, paging, physical memory management, secondary storage, and remote (that is, networked) storage. Captured in the notion of a memory hierarchy are classes that represent memory objects. These classes provide a storage mechanism that contains encapsulated data and have methods to read or write the memory object. Each of these classes provides specializations to represent the memory hierarchy.

Russo, Vincent F.↗

NASA NTRS1990

A Byzantine resilient processor with an encoded fault-tolerant shared memory

The memory requirements for ultra-reliable computers are expected to increase due to future increases in mission functionality and operating-system requirements. This increase will have a negative effect on the reliability and cost of the system. Increased memory size will also reduce the ability to reintegrate a channel after a transient fault, since the time required to reintegrate a channel in a conventional fault-tolerant processor is dominated by memory realignment time. A Byzantine Resilient Fault-Tolerant Processor with Fault-Tolerant Shared Memory (FTP/FTSM) is presented as a solution to these problems. The FTSM uses an encoded memory system, which reduces the memory requirement by one-half compared to a conventional quad-FTP design. This increases the reliability and decreases the cost of the system. The realignment problem is also addressed by the FTSM. Because any single error is corrected upon a read from the FTSM, a faulty channel's corrupted memory does not need realignment before reintegration of the faulty channel. A combination of correct-on-access and background scrubbing is proposed to prevent the accumulation of transient errors in the memory. With a hardware-implemented scrubber, the scrubbing cycle time, and therefore the memory fault latency, can be upper-bounded at a small value. This technique increases the reliability of the memory system and facilitates validation of its reliability model.

Butler, Bryan↗

NASA NTRS1989

Sparse distributed memory: Principles and operation

Sparse distributed memory is a generalized random access memory (RAM) for long (1000 bit) binary words. Such words can be written into and read from the memory, and they can also be used to address the memory. The main attribute of the memory is sensitivity to similarity, meaning that a word can be read back not only by giving the original write address but also by giving one close to it as measured by the Hamming distance between addresses. Large memories of this kind are expected to have wide use in speech recognition and scene analysis, in signal detection and verification, and in adaptive control of automated equipment, in general, in dealing with real world information in real time. The memory can be realized as a simple, massively parallel computer. Digital technology has reached a point where building large memories is becoming practical. Major design issues were resolved which were faced in building the memories. The design is described of a prototype memory with 256 bit addresses and from 8 to 128 K locations for 256 bit words. A key aspect of the design is extensive use of dynamic RAM and other standard components.

Flynn, M. J.↗

NASA NTRS1990

Integrating Commercial Off-The-Shelf (COTS) graphics and extended memory packages with CLIPS

This paper addresses the question of how to mix CLIPS with graphics and how to overcome PC's memory limitations by using the extended memory available in the computer. By adding graphics and extended memory capabilities, CLIPS can be converted into a complete and powerful system development tool, on the other most economical and popular computer platform. New models of PCs have amazing processing capabilities and graphic resolutions that cannot be ignored and should be used to the fullest of their resources. CLIPS is a powerful expert system development tool, but it cannot be complete without the support of a graphics package needed to create user interfaces and general purpose graphics, or without enough memory to handle large knowledge bases. Now, a well known limitation on the PC's is the usage of real memory which limits CLIPS to use only 640 Kb of real memory, but now that problem can be solved by developing a version of CLIPS that uses extended memory. The user has access of up to 16 MB of memory on 80286 based computers and, practically, all the available memory (4 GB) on computers that use the 80386 processor. So if we give CLIPS a self-configuring graphics package that will automatically detect the graphics hardware and pointing device present in the computer, and we add the availability of the extended memory that exists in the computer (with no special hardware needed), the user will be able to create more powerful systems at a fraction of the cost and on the most popular, portable, and economic platform available such as the PC platform.

Callegari, Andres C.↗

NASA NTRS2001

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Rao, Vikram↗

NASA NTRS2007

Performance Measurement of a Multi-Level/Analog Ferroelectric Memory Device Design

Increasing the memory density and utilizing the unique characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes the characterization of a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used a reference to determinethe amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. This paper presents measurements of an actual prototype memory cell. This prototype is not a complete implementation of a device, but instead, a prototype of the storage and retrieval portion of an actual device. The performance of this prototype is presented with the projected performance of the overall device. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗

NASA NTRS2005

Flash memory management system and method utilizing multiple block list windows

The present invention provides a flash memory management system and method with increased performance. The flash memory management system provides the ability to efficiently manage and allocate flash memory use in a way that improves reliability and longevity, while maintaining good performance levels. The flash memory management system includes a free block mechanism, a disk maintenance mechanism, and a bad block detection mechanism. The free block mechanism provides efficient sorting of free blocks to facilitate selecting low use blocks for writing. The disk maintenance mechanism provides for the ability to efficiently clean flash memory blocks during processor idle times. The bad block detection mechanism provides the ability to better detect when a block of flash memory is likely to go bad. The flash status mechanism stores information in fast access memory that describes the content and status of the data in the flash disk. The new bank detection mechanism provides the ability to automatically detect when new banks of flash memory are added to the system. Together, these mechanisms provide a flash memory management system that can improve the operational efficiency of systems that utilize flash memory.

Chow, James↗

NASA NTRS2006

Design of a Multi-Level/Analog Ferroelectric Memory Device

Increasing the memory density and utilizing the dove1 characteristics of ferroelectric devices is important in making ferroelectric memory devices more desirable to the consumer. This paper describes a design that allows multiple levels to be stored in a ferroelectric based memory cell. It can be used to store multiple bits or analog values in a high speed nonvolatile memory. The design utilizes the hysteresis characteristic of ferroelectric transistors to store an analog value in the memory cell. The design also compensates for the decay of the polarization of the ferroelectric material over time. This is done by utilizing a pair of ferroelectric transistors to store the data. One transistor is used as a reference to determine the amount of decay that has occurred since the pair was programmed. The second transistor stores the analog value as a polarization value between zero and saturated. The design allows digital data to be stored as multiple bits in each memory cell. The number of bits per cell that can be stored will vary with the decay rate of the ferroelectric transistors and the repeatability of polarization between transistors. It is predicted that each memory cell may be able to store 8 bits or more. The design is based on data taken from actual ferroelectric transistors. Although the circuit has not been fabricated, a prototype circuit is now under construction. The design of this circuit is different than multi-level FLASH or silicon transistor circuits. The differences between these types of circuits are described in this paper. This memory design will be useful because it allows higher memory density, compensates for the environmental and ferroelectric aging processes, allows analog values to be directly stored in memory, compensates for the thermal and radiation environments associated with space operations, and relies only on existing technologies.

MacLeod, Todd C.↗

DOE OSTI2018

Near-memory data reorganization engine

A memory subsystem package is provided that has processing logic for data reorganization within the memory subsystem package. The processing logic is adapted to reorganize data stored within the memory subsystem package. In some embodiments, the memory subsystem package includes memory units, a memory interconnect, and a data reorganization engine ("DRE"). The data reorganization engine includes a stream interconnect and DRE units including a control processor and a load-store unit. The control processor is adapted to execute instructions to control a data reorganization. The load-store unit is adapted to process data move commands received from the control processor via the stream interconnect for loading data from a load memory address of a memory unit and storing data to a store memory address of a memory unit.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2018

Smart memory buffers

An example method involves receiving, at a first memory node, data to be written at a memory location in the first memory node. The data is received from a device. At the first memory node, old data is read from the memory location, without sending the old data to the device. The data is written to the memory location. The data and the old data are sent from the first memory node to a second memory node to store parity information in the second memory node without the device determining the parity information. The parity information is based on the data stored in the first memory node.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2019

Memory address translation

A memory address translation apparatus comprises a translation data store to store one or more instances of translation data. Each instance provides address range boundary values defining a range of virtual memory addresses between respective virtual memory address boundaries in a virtual memory address space, and indicates a translation between a virtual memory address in the range of virtual memory addresses and a corresponding output memory address in an output address space. When a given virtual memory address to be translated lies outside the ranges of virtual memory addresses defined by any instances of the translation data stored by the translation data store, detector circuitry retrieves one or more further instances of the translation data and translation circuitry applies the translation defined by a detected instance of the translation data to the given virtual memory address.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2020

Smart memory buffers

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2025

Flexible and Effective Object Tiering for Heterogeneous Memory Systems

Computing platforms that package multiple types of memory, each with their own performance characteristics, are quickly becoming mainstream. To operate efficiently, heterogeneous memory architectures require new data management solutions that are able to match the needs of each application with an appropriate type of memory. As the primary generators of memory usage, applications create a great deal of information that can be useful for guiding memory management, but the community still lacks tools to collect, organize, and leverage this information effectively. To address this gap, this work introduces a novel software framework that collects and analyzes object-level information to guide memory tiering. The framework includes tools to monitor the capacity and usage of individual data objects, routines that aggregate and convert this information into tier recommendations for the host platform, and mechanisms to enforce these recommendations according to user-selected policies. Moreover, the developed tools and techniques are fully automatic, work on standard Linux systems, and do not require modification or recompilation of existing software. Using this framework, this study evaluates and compares the impact of a variety of design choices for memory tiering, including different policies for prioritizing objects for the fast memory tier as well as the frequency and timing of migration events. In conclusion, the results, collected on a modern Intel platform with conventional DDR4 SDRAM as well as Intel Optane NVRAM, show that guiding data tiering with object-level information can enable significant performance and efficiency benefits compared with standard hardware- and software-directed data-tiering strategies for a diverse set of memory-intensive workloads.

97 MATHEMATICS AND COMPUTING↗