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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Microscopic, electrical and optical studies on InGaN/GaN quantum wells based LED devices

We report here on the micro structural, electronic and optical properties of a GaN-based InGaN/GaN MQW LED grown by the MOVPE method. The present study shows that the threading dislocations present in these LED structures are terminated as V pits at the surface and have an impact on the electrical and optical activity of these devices. It has been pointed that these dislocations were of edge, screw and mixed types. EBIC maps suggest that the electrically active defects are screw and mixed dislocations and behave as nonradiative recombinant centres.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED)

A vertical ultraviolet (UV) light-emitting diode (LED) that does not require substrate removal is developed. Spontaneous via holes are formed in n-AlN layer epitaxially grown on a high conductive n+Si substrate and the injected current flows directly from the p-electrode to high doped n{sup +} Si substrate through p-AlGaN, multi-quantum wells, n-AlGaN and spontaneous via holes in n-AlN. The spontaneous via holes were formed by controlling feeding-sequence of metal-organic gas sources and NH{sub 3} and growth temperature in MOCVD. The via holes make insulating n-AlN to be conductive. We measured the current-voltage, current-light intensity and emission characteristics of this device. It exhibited a built-in voltage of 3.8 V and emission was stated at 350 nm from quantum wells with successive emission centered at 400 nm. This UV LED can be produced, including formation of n and p electrodes, without any resist process.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Theoretical and experimental analysis of AlGaInP micro-LED array with square-circle anode

An array of 320 × 240 micro-light-emitting diodes (micro-LEDs) based on an AlGaInP epitaxial wafer and with a unit size of 100 µm×100 µm was designed and fabricated. The optimum width of the isolation groove between adjacent light-emitting units was determined based on a compromise between full isolation of each LED and maximization of the light emitting area, and was found to be 20 µm. The grooves were filled with a mixed Si granule-polyurethane composite medium, because this type of insulating material can reflect part of the emitted light from the sidewall to the window layer in each light-emitting unit, and could thus improve lighting output efficiency. The 10-µm-wide square-circle anode was designed to increase the light emitting area while simultaneously being simple to fabricate. The device current used was in the 0.42–1.06 mA range to guarantee internal quantum efficiency of more than 85%, with a corresponding voltage range of 2–2.3 V. The layered temperature distribution in a single unit was simulated under a drive voltage of 2.2 V, and the maximum device temperature was 341 K. The micro-opto-electro-mechanical systems (MOEMS) technology-based fabrication process, experimental images of the device and device test results are presented here.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Properties of V-defect injectors in long wavelength GaN LEDs studied by near-field electro- and photoluminescence

The efficiency of multiple quantum well (QW) light emitting diodes (LEDs) to a large degree depends on uniformity of hole distribution between the QWs. Typically, transport between the QWs takes place via carrier capture into and thermionic emission out of the QWs. In InGaN/GaN QWs, the thermionic hole transport is hindered by the high quantum confinement and polarization barriers. To overcome this drawback, hole injection through semipolar QWs located at sidewalls of V-defects had been proposed. However, in the case of the V-defect injection, strong lateral emission variations take place. In this work, we explore the nature of these variations and the impact of the V-defects on the emission spectra and carrier dynamics. The study was performed by mapping electroluminescence (EL) and photoluminescence (PL) with a scanning near-field optical microscope in LEDs that contain a deeper well that can only be populated by holes through the V-defects. Applying different excitation schemes (electrical injection and optical excitation in the far- and near-field), we have shown that the EL intensity variations are caused by the lateral nonuniformity of the hole injection. We have also found that, in biased structures, the PL intensity and decay time in the V-defect regions are only moderately lower that in the V-defect-free regions thus showing no evidence of an efficient Shockley-–Read–Hall recombination. In the V-defect regions, the emission spectra experience a red shift and increased broadening, which suggests an increase of the In content and well width in the polar QWs close to the V-defects.

Electroluminescence↗
DOE OSTI2015

Reliable LED Lighting Technologies: Key Factors and Procurement Guidance

Abstract— Lighting systems have the ability to transform the economic and educational infrastructure of disadvantaged communities, and eradicating “light poverty” has become one of the primary goals of the International Year of Light 2015. Solid-state lighting (SSL) technology, based on light-emitting diode (LED) light sources, has emerged as the next generation of lighting technology, with a current global market penetration of roughly 5%. This paper will report on recent research on understanding SSL lighting system reliability (failure modes, environmental stressors, electrical power quality); discuss the implications of SSL technology reliability for providing lighting services; and suggest practical approaches to ensure SSL reliability to benefit humanity. Among the key findings from this work is that LED sources can be extremely reliable, withstanding a broad range of environmental stresses without failure. Nonetheless, SSL lighting systems can have a negative impact on electrical power reliability, as well as on the affordability of lighting services, without attention to the quality of the accompanying power infrastructure. It is therefore critical to ensure that the performance of the power supply electronics used in lighting systems is matched to the quality of the power source, when evaluating energy efficient lighting choices.

Davis, Lynn↗
DOE OSTI2024

Development of an MKID frequency-to-pixel LED mapper for SPT-3G+

SPT-3G+ is the next-generation camera for the South Pole Telescope (SPT). SPT is designed to measure the cosmic microwave background (CMB) and the mm/sub-mm sky. The planned focal plane consists of 34,000 microwave kinetic inductance detectors (MKIDs), divided among three observing bands centered at 220, 285, and 345 GHz. Each readout line is designed to measure 800 MKIDs over a 500 MHz bandwidth, which places stringent constraints on the accuracy of the frequency placement required to limit resonator collisions that reduce the overall detector yield. To meet this constraint, we are developing a two-step process that first optically maps the resonance to a physical pixel location, and then next trims the interdigitated capacitor (IDC) to adjust the resonator frequency. We present a cryogenic LED apparatus operable at 300 mK for the optical illumination of SPT-3G+ detector arrays. We demonstrate integration of the LED controls with the GHz readout electronics (RF-ICE) to take data on an array of prototype SPT-3G+ detectors. We show that this technique is useful for characterizing defects in the resonator frequency across the detector array and will allow for improvements in the detector yield.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties

SiGe-based n{sup +}–p–p{sup +} light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Luminescence Spectra of High-Power Violet and Ultraviolet Gallium Nitride-Based LEDs

The electroluminescence spectra of high-power light-emitting diodes (LEDs) based on p–n heterostructures of the InGaN/AlGaN/GaN type emitting in the visible short-wavelength and ultraviolet spectral regions (the range from 370 to 460 nm) are investigated. The shape of spectra is described by a model taking into account a two-dimensional combined density of states and potential fluctuations. Additional long-wavelength peaks are found in emission spectra. The emission power of ultraviolet and violet LEDs reaches 233 mW at a current of 350 mA, and the external quantum yield reaches 23% at the maximum (near a current of 100 mA).

36 MATERIALS SCIENCE↗
DOE OSTI2018

Fabrication and Study of Optical Properties of LEDs Based on GaN Micropyramids with a Ni/Au/Graphene Semi-Transparent Contact

The results of studies of technological conditions of formation of LEDs on the basis of an InGaN/GaN micropyramid in the core/shell geometry using a semi-transparent Ni/Au/graphene contact have been presented. The structures have been formed by the method of metalorganic vapor-phase epitaxy. The development of the tranfer conditions of large-area graphene obtained by chemical-vapor deposition has allowed the using of it as a contact for current injection. The fabricated LEDs have demonstrated electroluminescence at a wavelength of 520–540 nm. These sources of radiation are of interest for biomedical applications— in particular, for optogenetics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Enumeration reduction algorithm for the characterization of multi-primary LED systems

Multi-primary tunable LED lighting systems can generate a vast number of spectral outputs, with the exact number depending on the resolution of the control signal and number of LED primaries. Computing all combinations to identify optimal spectral power distributions (SPDs) with a specified chromaticity would require a tremendous amount of time and computational power. Here, an enumeration reduction (ER) algorithm is described to reduce the computation time by defining a bounding pyramid in the three-dimensional tristimulus space that maps to the circumscribed square of the target region in the chromaticity diagram. This method enables computing only the necessary amount of tristimulus values (and resulting chromaticity coordinates) for SPDs that fall into a user-defined target chromaticity area, reducing computation time by avoiding the need to generate each combination and calculate its chromaticity coordinates. The results show that the proposed ER algorithm can greatly reduce the time – up to 922 times in a series of tests – to determine a set of metamers compared to a full enumeration computation.

47 OTHER INSTRUMENTATION↗
DOE OSTI2013

Semi-polar GaN Materials Technology for High IQE Green LEDs

The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

Koleske, Daniel D.↗
DOE OSTI2013

Recovery Act: Low-Cost, Highly Lambertian Reflector Composite For Improved LED Fixture Efficiency and Lifetime

The overall objective of the program was to demonstrate a 98% or greater reflective, highly diffuse, low-cost composite material that significantly improves luminaire efficiency, is able to withstand 50,000 hours or greater luminaire operation under expected LED system thermal and environmental operating extremes and meets the cost targets required to be an effective commercial solution for the Solid State Lighting industry. This project met most of the goals defined and contributed to the understanding of high reflectance, white coatings. Research under this program increased the understanding of coatings development using particle size reduction techniques and preparation of coating solutions with a broad range of particle types. The research explored scale-up of coating systems and generated understanding of processing required for high volume manufacturing applications. The work demonstrated how coating formulation and application technique can translate to material durability and LED system lifetime. The research also demonstrated improvements in lighting efficiency to be gained using high reflectance white coatings.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2013

Development of Production PVD-AIN Buffer Layer System and Processes to Reduce Epitaxy Costs and Increase LED Efficiency (Final Scientific/Technical Report)

The DOE has set aggressive goals for solid state lighting (SSL) adoption, which require manufacturing and quality improvements for virtually all process steps leading to an LED luminaire product. The goals pertinent to this proposed project are to reduce the cost and improve the quality of the epitaxial growth processes used to build LED structures. The objectives outlined in this proposal focus on achieving cost reduction and performance improvements over state-of-the-art, using technologies that are low in cost and amenable to high efficiency manufacturing. The objectives of the outlined proposal focus on cost reductions in epitaxial growth by reducing epitaxy layer thickness and hetero-epitaxial strain, and by enabling the use of larger, less expensive silicon substrates and would be accomplished through the introduction of a high productivity reactive sputtering system and an effective sputtered aluminum-nitride (AlN) buffer/nucleation layer process. Success of the proposed project could enable efficient adoption of GaN on-silicon (GaN/Si) epitaxial technology on 150mm silicon substrates. The reduction in epitaxy cost per cm 2 using 150mm GaN-on-Si technology derives from (1) a reduction in cost of ownership and increase in throughput for the buffer deposition process via the elimination of MOCVD buffer layers and other throughput and CoO enhancements, (2) improvement in brightness through reductions in defect density, (3) reduction in substrate cost through the replacement of sapphire with silicon, and (4) reduction in non-ESD yield loss through reductions in wafer bow and temperature variation. The adoption of 150mm GaN/Si processing will also facilitate significant cost reductions in subsequent wafer fabrication manufacturing costs. There were three phases to this project. These three phases overlap in order to aggressively facilitate a commercially available production GaN/Si capability. In Phase I of the project, the repeatability of the performance was analyzed and improvements implemented to the Veeco PVD-AlN prototype system to establish a specification and baseline PVD-AlN films on sapphire and in parallel the evaluation of PVD AlN on silicon substrates began. In Phase II of the project a Beta tool based on a scaled-up process module capable of depositing uniform films on batches of 4” or 6” diameter substrates in a production worthy operation was developed and qualified. In Phase III, the means to increase the throughput of the PVD-AlN sy0stem was evaluated and focused primarily on minimizing the impact of the substrate heating and cooling times that dominated the overall cycle time.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2018

Improved InGaN LED System Efficacy and Cost via Droop Reduction (Final CRADA Report)

We propose to develop blue InGaN pump LEDs with a high-current (100A/cm 2 ) external quantum efficiency gain of 13% over the current state of the art, to be immediately realized in commercial products. Current state-of-the-art LEDs achieve peak efficiency at ~10A/cm 2 drive current, and reduce to ~86% of peak efficiency by 100A/cm 2 – the so-called efficiency droop. While further improvements in InGaN material quality will improve the low flux/$\$$ regime that is commercially irrelevant, improvements in high-current efficiency (~100A/cm 2 ) can result in tremendous gains in flux/$\$$ and wall-plug efficiency. To realize these gains in efficiency and system cost, development efforts should focus on mitigating droop.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2018

High-Efficacy High-Power LED for Directional Applications

In this project, Lumileds has developed a high-power LED emitter with increased efficacy to improve luminaire performance in directional lighting applications. The efficacy gain was realized by an integrated development effort with improvements in each of the LED technology elements: epitaxy, die, phosphor and package.

42 ENGINEERING↗
DOE OSTI2018

Expanding PV Value: Lessons Learned from Utility-led Distributed Energy Resource Aggregation in the United States

Distributed PV capacity in the United States has increased from about 0.4 Gigawatts (GW) in 2010 to 10.5 GW in 2017 (GTM Research and SEIA 2018). When distributed PV is coupled with other emerging distributed energy resources (DERs) like battery storage and electric vehicles (EVs) they can provide demand response, voltage regulation, and other grid services. When many DERs are aggregated and called upon to provide these services simultaneously they may offer the same or more value than large, centralized power producers. In the United States, utility efforts to aggregate DERs are in the nascent stage. If initial DER aggregation programs prove successful, it could open new value streams for PV and other emerging DERs, thereby expanding deployment and transforming the energy market. The literature on the scope, performance, and lessons learned from utility-led DER aggregation programs is limited. This report fills this research gap, first by surveying utility-led DER aggregation programs nationwide, and then providing a deeper analysis of five utility pilots. We compare lessons learned across the five cases to develop a list of common challenges and related solutions that other utilities might consider when developing next generation programs.

14 SOLAR ENERGY↗
DOE OSTI2018

Improved InGaN LED System Efficacy and Cost via Droop Reduction

Sandia National Laboratories (SNL) and Lumileds LLC (Lumileds) collaborated to better understand the physical properties of InGaN materials and heterostructures in radiative and non-radiative pathways of Light-Emitting Diodes (LEDs). As a result of this joint research, more efficient electroluminescent devices, particularly those driven at high powers for LEDs, were developed.

Armstrong, Andrew↗