PRINCIPLES OF P-N JUNCTION DETECTORS
Solid state ionization p-n junction detectors
SOLID STATE DEVICE↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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ANALYSIS OF STRESS AT SEVERAL JUNCTIONS IN PRESSURIZED SHELLS
Stress analysis at several junctions of pressurized shells
JUNCTION↗
Absorption edge modulator utilizing a p-n junction.
Optical absorption edge shift in reverse-biased p-n junction gallium arsenide semiconductor for light modulation
OPTICAL ABSORPTION↗
Epitaxial process development for monolithic complementary MOS-FET structures with P-N JUNCTION isolation Final report, 1 Feb. - 15 Jul. 1965
Epitaxial deposition of P-type silicon into etche grooves in N-type silicon for P-N junction for complimentary MOS-FET devices
P-N JUNCTION↗
A Study of Thin Film Vacuum Deposited Junctions Semiannual Status Report, Dec. 5, 1965 - Jun. 5, 1966
Thin film vacuum deposited junctions
VACUUM DEPOSITION↗
Some Effects of Mechanical Stress on the Breakdown Voltage of P-n Junctions
Effects of mechanical stress on breakdown voltage of p-n junctions
STRESS-STRAIN-TIME RELATION↗
Equivalence of stress- and radiation-induced defects in degenerate p-n junctions.
Equivalence of stress and electron-irradiation induced defects in degenerate p-n germanium junctions as indicated in similar voltage-anneal characteristics
P-N JUNCTION↗
Effect of mechanical stress on p-n junction device characteristics. II - Generation- recombination current.
Theoretical model for effect of mechanical stress on generation-recombination currents in p-n junctions
SEMICONDUCTOR DEVICE↗
A study of parameters affecting the maximum voltage capabilities of shielded negative dielectric junction vacuum insulators.
Effectiveness parameters of spherical shield electrode surrounding negative dielectric junction of insulator in high vacuum
VACUUM EFFECT↗
A study of thin film vacuum deposited junctions Annual status report, 5 Dec. 1965 - 5 Dec. 1966
Mechanisms of charge carrier mobility in thin polycrystalline film junctions
JUNCTION↗
Effects of stress-induced band-gap widening and defects in GaAs junctions.
Compressive stress effect on band gap widening and diffusion current in GaAs junctions
JUNCTION TRANSISTOR↗
Influence of mobility and lifetime variations on drift-field effects in silicon-junction devices.
Electron mobility and lifetime variations effects on drift field in silicon junction devices
FIELD EFFECT TRANSISTOR /FET/↗
Image-force effects in normal tunneling through junctions exhibiting the Josephson effect.
Image-force effects in normal state tunneling through lead-oxide-lead junctions exhibiting Josephson effect
OXIDE FILM↗
High-T(sub c) Superconductor-Normal-Superconductor Junctions with Polyimide-Passivated Ambient Temperature Edge Formation
The ability to controllably fabricate High-Temperature Superconductor (HTS) S-Normal-S (SNS) Josephson Juntions (JJ's) enhances the possibilities fro many applications, including digital circuits, SQUID's, and mixers. A wide variety of approaches to fabricating SNS-like junctions has been tried and analyzed in terms of proximity effect behavior.
HTS SNS Josephson Junction JJ polyimide films poly↗
Stationary Properties of High Critical Temperature Proximity Effect Josephson Junctions
The data is reviewed about superconductor-normal-superconductor (SNS) devices, and the conclusion is drawn that there is no conventional proximity effect in the majority of reported high Tc devices. The present experimental and theoretical understanding of SNS junctions is discussed as well as implications for future research.
superconductors↗
A 547 GHz SIS Receiver Employing a Submicron Nb Junction with an Integrated Matching Circuit
The most sensitive heterodyne receivers used for millimeter wave and submillimeter wave radioastronomy employ superconductor-insulator-superconductor (SIS) tunnel junctions as the nonlinear mixing element.
SIS junctions planar mixer circuits waveguide mixe↗
A Submillimeter Wave SIS Heterodyne Receiver Using Nb Tunnel Junctions with Integrated Tuning Circuits for 626 GHz
So far, the most sensitive heterodyne receivers in the millimeter-wave and submillimeter-wave frequency ranges have used the mixing response of the quasiparticle currents in SIS tunnel junctions.
heterodyne receivers niobium-based tunnel junction↗
Fabrication of Nb/Al-Nx/NbTiN Junctions for SIS Mixer Applications Above 1 THz
We discuss the material processing limits of superconductor-insulator-superconductor (SIS) junctions with an energy gap high enough to enable THz heterodyne mixer detection.
NbTiN THz heterodyne mixer detection↗