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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

Walters, Robert J.↗
NASA NTRS2016

Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk BiCMOS/DMOS technology. Since we do not know the number of overlayers used in the fabrication processes, linear energy transfer calculations are determined based on the top-surface incident ion species and kinetic energy.

Power MOSFET↗
NASA NTRS1990

Thermal radiation characteristics of nonisothermal cylindrical enclosures using a numerical ray tracing technique

Analysis of energy emitted from simple or complex cavity designs can lead to intricate solutions due to nonuniform radiosity and irradiation within a cavity. A numerical ray tracing technique was applied to simulate radiation propagating within and from various cavity designs. To obtain the energy balance relationships between isothermal and nonisothermal cavity surfaces and space, the computer code NEVADA was utilized for its statistical technique applied to numerical ray tracing. The analysis method was validated by comparing results with known theoretical and limiting solutions, and the electrical resistance network method. In general, for nonisothermal cavities the performance (apparent emissivity) is a function of cylinder length-to-diameter ratio, surface emissivity, and cylinder surface temperatures. The extent of nonisothermal conditions in a cylindrical cavity significantly affects the overall cavity performance. Results are presented over a wide range of parametric variables for use as a possible design reference.

Baumeister, Joseph F.↗
NASA NTRS1981

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗
NASA NTRS1983

Double-injection, deep-impurity switch development

The overall objective of this program is the development of device design and process techniques for the fabrication of a double-injection, deep-impurity (DI)(2) silicon switch that operates in the 1-10 kV range with conduction current of 10 and 1A, respectively. Other major specifications include a holding voltage of 0 to 5 volts at 1 A anode current, 10 microsecond switching time, and power dissipation of 50 W at 75 C. This report describes work that shows how the results obtained at the University of Cincinnati under NASA Grant NSG-3022 have been applied to larger area and higher voltage devices. The investigations include theoretical, analytical, and experimental studies of device design and processing. Methods to introduce deep levels, such as Au diffusion and electron irradiation, have been carried out to "pin down' the Fermi level and control device-switching characteristics. Different anode, cathode, and gate configurations are presented. Techniques to control the surface electric field of planar structures used for (DI)(2) switches are examined. Various sections of this report describe the device design, wafer-processing techniques, and various measurements which include ac and dc characteristics, 4-point probe, and spreading resistance.

Selim, F. A.↗
NASA NTRS2003

Electron Radiation Effects on Candidate Solar Sail Material

Solar sailing is a unique form of propulsion where a spacecraft gains momentum from incident photons. Solar sails are not limited by reaction mass and provide continual acceleration, reduced only by the lifetime of the lightweight film in the space environment and the distance to the Sun. Once thought to be difficult or impossible, solar sailing has come out of science fiction and into the realm of possibility. Any spacecraft using this propulsion method would need to deploy a thin sail that could be as large as many kilometers in extent. The availability of strong, ultra lightweight, and radiation resistant materials will determine the future of solar sailing. The National Aeronautics and Space Administration's (NASA) Marshall Space Flight Center (MSFC) is concentrating research into the utilization of ultra lightweight materials for spacecraft propulsion. The Space Environmental Effects Team at MSFC is actively characterizing candidate solar sail material to evaluate the thermo-optical and mechanical properties after exposure to space environmental effects. This paper will describe the irradiation of candidate solar sail materials to energetic electrons, in vacuum, to determine the hardness of several candidate sail materials.

Edwards, David L.↗
NASA NTRS1979

Fabrication of high efficiency and radiation resistant GaAs solar cells

Systematic improvements in fabrication yield were obtained by appropriate control of the liquid phase epitaxial growth process, contact fabrication and surface preparation. To improve radiation hardness, the junction depth was decreased while overcoming the penalty in decreased solar cell efficiency which tends to go hand-in-hand with the reduction of junction depth in (AlGa) As-GaAs solar cells. Cells were made with an AMO efficiency of 18% and a junction depth of 0.5 micrometers, as compared to junction depths on the order of 1.0 micrometers. With respect to the damage caused by proton irradiation, the nature of the observed damage was correlated to the energy and penetration depth of the damaging protons.

Kamath, S.↗
NASA NTRS1993

XPS analysis of the effect of fillers on PTFE transfer film development in sliding contacts

The development of transfer films atop steel counterfaces in contact with unfilled and bronze-filled PTFE has been studied using X-ray photoelectron spectroscopy. The sliding apparatus was contained within the vacuum of the analytical system, so the effects of the native oxide, hydrocarbon, and adsorbed gaseous surface layers of the steel upon the PTFE transfer behavior could be studied in situ. For both the filled and the unfilled PTFE, cleaner surfaces promoted greater amounts of transfer. Metal fluorides, which formed at the transfer film/counterface interface, were found solely in cases where the native oxide had been removed to expose the metallic surface prior to sliding. These fluorides also were found at clean metal/PTFE interfaces formed in the absence of frictional contact. A fraction of these fluorides resulted from irradiation damage inherent in XPS analysis. PTFE transfer films were found to build up with repeated sliding passes, by a process in which strands of transfer filled in the remaining counterface area. Under these reported test conditions, the transfer process is not expected to continue atop previously deposited transfer films. The bronze-filled composite generated greater amounts of transfer than the unfilled PTFE. The results are discussed relative to the observed increase in wear resistance imparted to PTFE by a broad range of inorganic fillers.

Blanchet, T. A.↗
NASA NTRS1994

Electron-irradiated two-terminal, monolithic InP/Ga0.47In0.53As tandem solar cells and annealing of radiation damage

Radiation damage results from two-terminal monolithic InP/Ga(0.47)In(0.53)As tandem solar cells subject to 1 MeV electron irradiation are presented. Efficiencies greater than 22 percent have been measured by the National Renewable Energy Laboratory from 2x2 sq cm cells at 1 sun, AMO (25 C). The short circuit current density, open circuit voltage and fill factor are found to tolerate the same amount of radiation at low fluences. At high fluence levels, slight differences are observed. Decreasing the base amount of radiation at the Ga(0.47)In(0.53)As bottomcell improved the radiation resistance of J(sub sc) dramatically. This is turn, extended the series current flow through the subcell substantially up to a fluence of 3x10(exp 15) cm(exp -2) compared to 3x10(exp 14) cm(exp -2), as observed previously. The degradation of the maximum power output form tandem device is comparable to that from shallow homojunction (SHJ) InP solar cells, and the mechanism responsible for such degradation is explained in terms of the radiation response of the component cells. Annealing studies revealed that the recovery of the tandem cell response is dictated by the annealing characteristics exhibited by SHJ InP solar cells.

Cotal, H. L.↗
NASA NTRS1995

Progress in HTS trapped field magnets: J(sub c), area, and applications

Progress in trapped field magnets is reported. Single YBCO grains with diameters of 2 cm are made in production quantities, while 3 cm, 4 1/2 cm and 6 cm diameters are being explored. For single grain tiles: J(sub c) is approximately 10,000 A/cm(exp 2) for melt textured grains; J(sub c) is approximately 40,000 A/cm2 for light ion irradiation; and J(sub c) is approximately 85,000 A/cm(exp 2) for heavy ion irradiation. Using 2 cm diameter tiles bombarded by light ions, we have fabricated a mini-magnet which trapped 2.25 Tesla at 77K, and 5.3 Tesla at 65K. A previous generation of tiles, 1 cm x 1 cm, was used to trap 7.0 Tesla at 55K. Unirradiated 2.0 cm tiles were used to provide 8 magnets for an axial gap generator, in a collaborative experiment with Emerson Electric Co. This generator delivered 100 Watts to a resistive load, at 2265 rpm. In this experiment activation of the TFMs was accomplished by a current pulse of 15 ms duration. Tiles have also been studied for application as a bumper-tether system for the soft docking of spacecraft. A method for optimizing tether forces, and mechanisms of energy dissipation are discussed. A bus bar was constructed by welding three crystals while melt-texturing, such that their a,b planes were parallel and interleaved. The bus bar, an area of approximately 2 cm(exp 2), carried a transport current of 1000 amps, the limit of the testing equipment available.

Weinstein, Roy↗
NASA NTRS1995

Progress in HTS Trapped Field Magnets: J(sub c), Area, and Applications

Progress in trapped field magnets is reported. Single YBCO grains with diameters of 2 cm are made in production quantities, while 3 cm, 4 1/2 cm and 6 cm diameters are being explored. For single grain tiles: J(sub c) - 10,000 A/sq cm for melt textured grains; J(sub c) - 40,000 A/sq cm for light ion irradiation; and J(sub c) - 85,000 A/J(sub c) for heavy ion irradiation. Using 2 cm diameter tiles bombarded by light ions, we have fabricated a mini-magnet which trapped 2.25 Tesla at 77K, and 5.3 Tesla at 65K. A previous generation of tiles, 1 cm x 1 cm, was used to trap 7.0 Tesla at 55K. Unirradiated 2.0 cm tiles were used to provide 8 magnets for an axial gap generator, in a collaborative experiment with Emerson Electric Co. This generator delivered 100 Watts to a resistive load, at 2265 rpm. In this experiment, activation of the TFMs was accomplished by a current pulse of 15 ms duration. Tiles have also been studied for application as a bumper-tether system for the soft docking of spacecraft. A method for optimizing tether forces, and mechanisms of energy dissipation are discussed. A bus bar was constructed by welding three crystals while melt-texturing, such that their a,b planes were parallel and interleaved. The bus bar, of area approx. 2 sq cm, carried a transport current of 1000 amps, the limit of the testing equipment available.

Weinstein, Roy↗
NASA NTRS1972

Ultraviolet and charged particle irradiation of proposed solar cell coverslide materials and conductive coatings for the Helios spacecraft

Coverslide materials consisting of Corning 7940 fused silica, multilayers of titanium and manganese oxides (blue reflector), and indium oxide (conductive-coating) were exposed to 16 UVSC up to 800 EUVSH in vacuum. Slight changes in optical transmittance and optical absorptance were found in the (200-360) millimicron regions of the fused silica and conductive coating respectively. Exposure to 4 KeV protons and 4.5 KeV electrons in vacuum, produced decreases of several percent in transmittance, (200-360) millimicron region in the fused silicas after total fluxes less or = 10 to the 14th power particles/sq cm. Sheet resistance of the conductive coating increased above 1.0 kilo-ohm/square after a total flux less or = 10 to the 14th power particles/sq cm. Solar cells with coverglasses utilizing the indium oxide conductive coating were exposed to 1 Mev electrons and 1 Mev protons in air and in vacuum. Total fluxes ranged from 10 to the 11th power particles/sq cm to 10 to the 15th power particle/sq cm. There was no appreciable degradation in the resistance of the conductive coating during or after these tests.

Fry, J.↗
NASA NTRS1971

Radiation damage in MOS integrated circuits, Part 1

Complementary and p-channel MOS integrated circuits made by four commercial manufacturers were investigated for sensitivity to radiation environment. The circuits were irradiated with 1.5 MeV electrons. The results are given for electrons and for the Co-60 gamma radiation equivalent. The data are presented in terms of shifts in the threshold potentials and changes in transconductances and leakages. Gate biases of -10V, +10V and zero volts were applied to individual MOS units during irradiation. It was found that, in most of circuits of complementary MOS technologies, noticable changes due to radiation appear first as increased leakage in n-channel MOSFETs somewhat before a total integrated dose 10 to the 12th power electrons/sg cm is reached. The inability of p-channel MOSFETs to turn on sets in at about 10 to the 13th power electrons/sq cm. Of the circuits tested, an RCA A-series circuit was the most radiation resistant sample.

Danchenko, V.↗
NASA NTRS1979

Annealing of radiation damage in 0.1- and 2-ohm-centimeter Silicon solar cells

Isochronal and isothermal annealing studies were conducted on 0.1 and 2 ohm centimeter n(+)/p silicon cells after irradiation by 1 MeV electrons at fluences of 10 to the 14th power, 5 times 10 to the 14th power, and 10 to the 15th power per square centimeter. For the 0.1 ohm centimeter cells, reverse annealing was not observed in the isochronal data. However, reverse annealing was observed between approximately 200 and 325 C in the isochronal data of the 2 ohm centimeter cells. Isothermal annealing of 0.1 ohm centimeter cells at 500 C restored pre-irradiation maximum power P sub max within 20 minutes at fluence = 10 to the 14th power, in 180 minutes at fluence = 5 times 10 to the 14th power and to 92 percent of pre-irradiation P sub max in 180 minutes for fluence = 10 to the 15th power. Annealing at 450 C was found inadequate to restore 0.1 ohm centimeter cell performance within reasonable times for all fluence levels. By comparison, at 450 C, the P sub max of 2 ohm centimeter cells was restored within 45 minutes, for the two highest fluence levels, while for the lowest fluence, restoration was completed within 15 minutes. Spectral response data indicate that, for both resistivities, degradation occurs predominantly in the cells p-type base region.

Weinberg, I.↗
NASA NTRS1985

The radiolysis and radioracemization of amino acids on clays

The effects of the surfaces of kaolinite and bentonite clays on the radiolysis and radioracemization of L-leucine and its hydrochloride salt have been investigated experimentally. L-leucine and its hydrochloride salt were deposited on the clays and the amino acid/clay preparations were irradiated by a Co-60 gamma-ray source which induced 2-89 percent radiolysis. The efficiency of radiolysis and radioracemization were measured using gas chromatography. Results were obtained for leucine in 0.1 M aqueous solution for comparison with the clay-deposted leucine and leucine hydrochloride. It is found that radiolysis and radioracemization in the samples occurred according to a pseudo-first-order rate law. Comparison of the specific rate constants showed that leucine and its hydrochloride salt were the most resistant to both radiolysis and radioracemization, followed by leucine and its hydrochloride salt on kaolin. Leucine and its HCl salt on bentonite, and leucine in aqueous solution were found to be the least resistant to radiolysis and radioracemization. The experimental results are intepreted with respect to the Vester-Ulbricht mechanism for the origin of optical activity.

Bonner, W. A.↗
NASA NTRS1977

Materials and techniques for spacecraft static charge control

An overview of the design, development, fabrication, and testing of transparent conductive coatings and conductive lattices deposited or formed on high resistivity spacecraft dielectric materials to obtain control static charge buildup on spacecraft external surfaces is presented. Fabrication techniques for the deposition of indium/tin oxide coatings and copper grid networks on Kapton and FEP Teflon films and special frit coatings for OSR and solar cell cover glasses are discussed. The techniques include sputtering, photoetching, silkscreening, and mechanical processes. A facility designed and built to simulate the electron plasma at geosynchronous altitudes is described along with test procedures. The results of material characterizations as well as electron irradiation aging effects in this facility for spacecraft polymers treated to control static charge are presented. The data presents results for electron beam energies up to 30 kV and electron current densities of 30 nA/cm squared. Parameters measured include secondary emission, surface leakage, and through the sample currents as a function of primary beam energy and voltage.

Amore, L. J.↗
NASA NTRS1987

Processing and characterization of high-efficiency

Silicon solar cells with efficiencies ranging from 17 to 17.7 percent are described. These cells were processed on low-resistivity FZ substrates using techniques recently developed for high efficiency terrestrial solar cells. Preliminary results indicate that the high efficiency cell is more susceptible to radiation damage in that it retains a smaller proportion of its original power output when compared to conventional space cells after exposure to 5 times 10 to the 14th power 1 MeV electrons. However, the cell does maintain a greater overall power output than the conventional cells to which it was compared. Furthermore, this cell does not demonstrate post-electron irradiation photon decay as has been described for cells processed on 1-10 ohm-cm float zone silicon.

Crotty, G. T.↗
NASA NTRS1971

Composite seals for liquid hydrogen and nuclear radiation environments.

Description of plastic composite seals for service in a liquid-hydrogen and nuclear-radiation environment. The radiation-resistant aromatic heterocyclic class of polymers, including polyimide, polybenzimidazole, and polyquinoxaline, were evaluated for this application. The seal developed is based on a design involving a resin-starved laminate consisting of alternating layers of woven glass fabric and polymer film. This design imparts a mechanical spring characteristic to the seal, resulting in essentially complete elastic recovery when unloaded, and eliminates cold flow. Encapsulating techniques employing the polyquinoxaline polymer were developed which rendered the seal impervious to liquid hydrogen. The seals were tested before and after gamma irradiation up to 10 to the 10th ergs/g. Load/deflection and leakage tests were performed over a temperature range from -423 through +500 F.

Van Auken, R. L.↗