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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

XAFS Investigation of Nanoparticle Formation in {sup 64}Zn{sup +} Ion Implanted and Thermo Oxidized Si

The single crystal CZ n-Si(100) substrates with electron concentration n{sub o} = 5 × 10{sup 16} cm{sup −3} were implanted by {sup 64}Zn{sup +} ions with dose of 5 × 10{sup 16} cm{sup −2} and energy of 50 keV. During implantation the ion beam current density was less than 0.5 μA/cm{sup 2} to avoid the substrate magnetically heating. After implantation, the plates were subjected to isochronous for one hour heat treatment in oxygen atmosphere at temperatures from 400 up to 1000{sup o}C with a step of 100{sup o}C. Zn K-edge EXAFS spectra were measured in fluorescent mode. Si(111) channel-cut monochromator was used for energy scanning; energy resolution ΔE/E = 2 × 10{sup –4}. According to Zn K-edge EXAFS data, all Zn implanted in Si at 900{sup o}C is fully oxidized: an absolute maximum of EXAFS Fourier transform at R ~ 1.6 Å corresponds to Zn–O distance. Based on XANES data, we suggest an interaction between implanted Zn atoms and Si support.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

We investigate the possibility of creating an intermediate band semiconductor by supersaturating Si with a range of transition metals (Au, Co, Cr, Cu, Fe, Pd, Pt, W, and Zn) using ion implantation followed by pulsed laser melting (PLM). Structural characterization shows evidence of either surface segregation or cellular breakdown in all transition metals investigated, preventing the formation of high supersaturations. However, concentration-depth profiling reveals that regions of Si supersaturated with Au and Zn are formed below the regions of cellular breakdown. Fits to the concentration-depth profile are used to estimate the diffusive speeds, v{sub D,} of Au and Zn, and put lower bounds on v{sub D} of the other metals ranging from 10{sup 2} to 10{sup 4} m/s. Knowledge of v{sub D} is used to tailor the irradiation conditions and synthesize single-crystal Si supersaturated with 10{sup 19} Au/cm{sup 3} without cellular breakdown. Values of v{sub D} are compared to those for other elements in Si. Two independent thermophysical properties, the solute diffusivity at the melting temperature, D{sub s}(T{sub m}), and the equilibrium partition coefficient, k{sub e}, are shown to simultaneously affect v{sub D}. We demonstrate a correlation between v{sub D} and the ratio D{sub s}(T{sub m})/k{sub e}{sup 0.67}, which is exhibited for Group III, IV, and V solutes but not for the transition metals investigated. Nevertheless, comparison with experimental results suggests that D{sub s}(T{sub m})/k{sub e}{sup 0.67} might serve as a metric for evaluating the potential to supersaturate Si with transition metals by PLM.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Effects of phosphorus doping by plasma immersion ion implantation on the structural and optical characteristics of Zn{sub 0.85}Mg{sub 0.15}O thin films

ZnMgO thin films deposited on 〈100〉 Si substrates by RF sputtering were annealed at 800, 900, and 1000 °C after phosphorus plasma immersion ion implantation. X-ray diffraction spectra confirmed the presence of 〈101{sup ¯}0〉 and 〈101{sup ¯}3〉 peaks for all the samples. However, in case of the annealed samples, the 〈0002〉 peak was also observed. Scanning electron microscopy images revealed the variation in surface morphology caused by phosphorus implantation. Implanted and non-implanted samples were compared to examine the effects of phosphorus implantation on the optical properties of ZnMgO. Optical characteristics were investigated by low-temperature (15 K) photoluminescence experiments. Inelastic exciton–exciton scattering and localized, and delocalized excitonic peaks appeared at 3.377, 3.42, and 3.45 eV, respectively, revealing the excitonic effect resulting from phosphorus implantation. This result is important because inelastic exciton–exciton scattering leads to nonlinear emission, which can improve the performance of many optoelectronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Effect of charge imbalance parameter on LEKW in ion-implanted quantum semiconductor plasmas

In this study we present an analytical investigation on the propagation characteristics of electro-kinetic wave modified through quantum correction term and charge imbalance parameter using quantum hydrodynamic model for an ion-implanted semiconductor plasma. The dispersion relation has been analyzed in two distinct velocity regimes. We found that as the number of negative charges resides on the colloids increases, their role become increasing effective. The present investigation is important for understanding of wave and instability phenomena and can be put to various interesting applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1976

Mossbauer effect in the ion-implanted iron-carbon alloys

The concentration dependence of Mossbauer effect in four carbon ion-implanted iron absorbers, which contain carbon as the solute atoms, has been investigated over the range of concentration 0.05 through 1 atomic percent. The specimens were prepared by implanting carbon atoms on each reference iron foil with four different bombarding energies of 250 keV, 160 keV, 140 keV and 80 keV, respectively. Thus, the specimen contains a uniform dosage of carbon atoms which penetrated up to 3,000 A depth of the reference iron. In the measurement of Mossbauer spectra, the backscattering conversion electron counting geometry was used. Typical results of Mossbauer parameters of iron-carbon alloys show that the isomer shift, quadrupole shift, the effective hyperfine splitting of Fe-57, and the intensity ratio exhibit a large variation with the increase of carbon concentration in the environment of iron atoms.

Han, K. S.↗
NASA NTRS1987

Behavior of ion-implanted junction diodes in 3C SiC

p-n junction diodes have been formed by ion implantation of B or Al in 3C SiC and annealing at 1365 C. The current-voltage characteristics of the Al-implanted structures show little rectification. The B-implanted diodes show rectification, with ideality factors of 2.2 and higher, breakdown voltages between 5 and 10 V, and a series resistance of the order of 20 kohm. The current-voltage characteristics were measured between room temperature and 270 C. The extracted ideality factors increase with temperature.

Avila, R. E.↗
DOE OSTI2016

Plasma Immersion Ion Implantation for Interdigitated Back Passivated Contact (IBPC) Solar Cells

We present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO2/c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam-line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm-2) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures grown on n-Cz wafers with PH3 PIII doping gave implied open circuit voltage (iVoc) values of 730 mV with Jo values of 2 fA/cm2. Samples doped with B2H6 gave iVoc values of 690 mV and Jo values of 24 fA/cm2, outperforming BF3 doping, which gave iVoc values in the 660-680 mV range. Samples were further characterized by photoluminescence and SIMS depth profiles. Initial IBPC cell results are presented.

14 SOLAR ENERGY↗
DOE OSTI2019

Phase Separation in (Ga,Mn)As Layers Obtained by Ion Implantation and Subsequent Laser Annealing

In this paper, we present the results of studies of the spectral, temperature, and field dependences of the transversal Kerr effect in Ga{sub 1 –} {sub x}Mn{sub x}As (x = 0.0066–0.033) layers produced by ion implantation and subsequent pulsed laser annealing. The complicated nonmonotonous nature of the temperature dependences of the transversal Kerr effect and its dependence on the measurement range indicate a magnetic inhomogeneity of the layers. The reasons for the inhomogeneity can be the Gaussian distribution of Mn over the thickness of the layers and the electron phase separation in them. The appearance of new features in the spectra of the transversal Kerr effect is explained by the presence in the doped semiconductor matrix of nanoregions with a higher carrier concentration and a higher Curie temperature and a shift of the Fermi level into the valence band leading to an increase in the energy of optical transitions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

{sup 4}H-SiC neutron sensors based on ion implanted {sup 10}B neutron converter layer

In the framework of the I{sub S}MART project the main aim is to develop an innovative complete radiation detection system based on silicon carbide technology in view to detect neutrons (thermal and fast) and photons for harsh environments. In the present work two geometries have been realized based on ion implantation of boron. In the first geometry, {sup 10}B ions have been implanted into the Al metallic contact to create the neutron converter layer. In the second geometry one single process has been used to realize both the p+-layer and the neutron converter layer. The technological processes followed to fabricate these detectors, with a study of their electrical behavior and their responses under thermal neutron irradiations are addressed in this paper. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2016

Low-cost plasma immersion ion implantation doping for Interdigitated back passivated contact (IBPC) solar cells

Here, we present progress to develop low-cost interdigitated back contact solar cells with pc-Si/SiO 2 /c-Si passivated contacts formed by plasma immersion ion implantation (PIII). PIII is a lower-cost implantation technique than traditional beam line implantation due to its simpler design, lower operating costs, and ability to run high doses (1E14-1E18 cm -2 ) at low ion energies (20 eV-10 keV). These benefits make PIII ideal for high throughput production of patterned passivated contacts, where high-dose, low-energy implantations are made into thin (20-200 nm) a-Si layers instead of into the wafer itself. For this work symmetric passivated contact test structures (~100 nm thick) grown on n-Cz wafers with pH3 PIII doping gave implied open circuit voltage (iV oc ) values of 730 mV with J o values of 2 fA/cm 2 . Samples doped with B 2 H 6 gave iV oc values of 690 mV and J o values of 24 fA/cm 2 , outperforming BF 3 doping, which gave iV oc values in the 660-680 mV range. Samples were further characterized by SIMS, photoluminescence, TEM, EELS, and post-metallization TLM to reveal micro- and macro-scopic structural, chemical and electrical information.

14 SOLAR ENERGY↗
DOE OSTI2018

In situ Bandgap Determination of the GaAsN Nanolayer Prepared by Low-Energy N{sub 2}{sup +} Ion Implantation

An approach to solving the problem of the in situ bandgap determination in the extremely thin and chemically active nitride nanolayers fabricated in high vacuum on the n-GaAs surface has been suggested. The approach is based on measuring the interband transitions involving the quantum well states by the method of electron energy loss spectroscopy. The bandgap of the nitride layer formed on the GaAs surface by low-energy N{sub 2}{sup +} ion implantation was determined to be 0.2 eV less than that of GaAs, which evidenced for creation of the GaAsN dilute alloy on the GaAs surface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Multi-beam RF Accelerators for Ion Implantation

We report on the development of a radio frequency (RF) linear accelerator (linac) for multiple-ion beams that is made from stacks of low cost wafers. The accelerator lattice is comprised of RF-acceleration gaps and electrostatic quadrupole focusing elements that are fabricated on 4' wafers made from printed circuit board or silicon. We demonstrate ion acceleration with an effective gradient of about 0.5MVm-1 with an array of 3 × 3 beams. The total ion beam energies achieved to date are in the 10 keV range with total ion currents in tests with noble gases of ~0.1mA. We discuss scaling of the ion energy (by adding acceleration modules) and ion currents (with more beams) for applications of this multi-beam RF linac technology to ion implantation and surface modification of materials.

Seidl, Peter A.↗
NASA NTRS1979

Pulsed-electron-beam annealing of ion-implantation damage

Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.

Greenwald, A. C.↗
DOE OSTI2020

Self-assembly of solid nanoclusters in molybdenum under gas ion implantation

The self-assembly of defects in materials could create unique physical and chemical properties. In nuclear fuels, the formation of self-assembled fission products mitigates fission-gas-release and swelling. In this work, we report the formation of a solid nanocluster superlattice in molybdenum, an important constituent in metallic fuels, under krypton gas ion implantation. X-ray absorption near edge structure measurements coupled with density functional theory calculations show that the pressure of krypton nanoclusters in molybdenum is ~2 GPa and molecular dynamic simulations reveal that the krypton atoms are solid in the nanoclusters with a krypton-to-vacancy ratio of ~0.28 at 300 K.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2026

Controllable Formation of Threefold-Coordinated Oxygen in Graphene by Low-Energy Ion Implantation

The atomically precise engineering of impurities in graphene and the understanding of their structural and carrier-dependent electronic properties at the nanoscale are crucial for advancing graphene-based nanoelectronics, catalysis, and energy technologies. Here, we demonstrate controllable incorporation of the elusive 3-fold-coordinated O substitutions into graphene using low-energy O + ion implantation under ultrahigh-vacuum conditions. By combining high-resolution scanning tunneling microscopy and spectroscopy (STM/S), bond-resolved noncontact atomic force microscopy techniques, and density functional theory (DFT) calculations, we resolve both the structural and electronic properties of the O-related defects. The STM/S measurements, corroborated by DFT calculations, uncover a characteristic impurity state that is energetically pinned to the Dirac point across different charge-carrier doping regimes. Molecular dynamics simulations further reveal the distribution of implantation-induced configurations and identify the formation of 3-fold-coordinated O dopants. Furthermore, this work provides a viable route to incorporate 3-fold-coordinated O dopants and opens new opportunities for controlled defect engineering in graphene.

3-fold-coordinated oxygen↗
DOE OSTI2016

High density nitrogen-vacancy sensing surface created via He{sup +} ion implantation of {sup 12}C diamond

We present a promising method for creating high-density ensembles of nitrogen-vacancy centers with narrow spin-resonances for high-sensitivity magnetic imaging. Practically, narrow spin-resonance linewidths substantially reduce the optical and RF power requirements for ensemble-based sensing. The method combines isotope purified diamond growth, in situ nitrogen doping, and helium ion implantation to realize a 100 nm-thick sensing surface. The obtained 10{sup 17 }cm{sup −3} nitrogen-vacancy density is only a factor of 10 less than the highest densities reported to date, with an observed 200 kHz spin resonance linewidth over 10 times narrower.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗