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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

DBR laser with nondynamic plasma grating formed by focused ion beam implanted dopants

A static plasma grating has been demonstrated experimentally (Wu et al., 1988) in a large-optical-cavity focused-ion-beam-distributed-Bragg-reflector (FIB-DBR) GaAlAs/GaAs laser diode. The grating is formed by implanting stripes of dopants with a focused ion beam. The dopants ionize to form periodic fluctuations in the carrier concentration which, through the Kramers-Kronig relations, form an index grating. A model of the grating strength for optimizaton of the laser design is developed and presented. The computed results show that the coupling coefficient k can be increased by more than an order of magnitude over the 15/cm experimentally. Therefore, FIB-DBR or FIB-distributed-feedback (DFB) lasers with performance comparable to that of conventional DBR (or DFB) lasers can be expected.

Boenke, Myra M.↗
DOE OSTI2023

Controlled semiconductor quantum dot fabrication utilizing focus ion beam

In this project, we experimented the focused ion beam (FIB) based fabrications of semiconductor quantum dots (QDs) by using metal nano particles (NPs) (e.g., Al) on semiconductor as a template and by means of the FIB induced direct metal-to-QD conversion. We have examined effect of the experimental conditions, including Ga + ion energy and dose as well as substrate temperature. The results of experiments have shown AlGaSb QD formation on GaSb substrate can be achieved under certain conditions but there are many challenges about the techniques, including compositional nonuniformity of the QDs formed, partial conversion of the metal NP to QD, and high defect concentration in the QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1993

MeV ion-beam analysis of optical data storage films

Our objectives are threefold: (1) to accurately characterize optical data storage films by MeV ion-beam analysis (IBA) for ODSC collaborators; (2) to develop new and/or improved analysis techniques; and (3) to expand the capabilities of the IBA facility itself. Using H-1(+), He-4(+), and N-15(++) ion beams in the 1.5 MeV to 10 MeV energy range from a 5.5 MV Van de Graaff accelerator, film thickness (in atoms/sq cm), stoichiometry, impurity concentration profiles, and crystalline structure were determined by Rutherford backscattering (RBS), high-energy backscattering, channeling, nuclear reaction analysis (NRA) and proton induced X-ray emission (PIXE). Most of these techniques are discussed in detail in the ODSC Annual Report (February 17, 1987), p. 74. The PIXE technique is briefly discussed in the ODSC Annual Report (March 15, 1991), p. 23.

Leavitt, J. A.↗
NASA NTRS1978

Adaptation of ion beam technology to microfabrication of solid state devices and transducers

A number of areas were investigated to determine the potential uses of ion beam techniques in the construction of solid state devices and transducers and the packaging of implantable electronics for biomedical applications. The five areas investigated during the past year were: (1) diode-like devices fabricated on textured silicon; (2) a photolithographic technique for patterning ion beam sputtered PVC (polyvinyl chloride); (3) use of sputtered Teflon as a protective coating for implantable pressure sensors; (4) the sputtering of Macor to seal implantable hybrid circuits; and (5) the use of sputtered Teflon to immobilize enzymes.

Topich, J. A.↗
NASA NTRS1986

A study of target heating in low-energy ion-beam processing

A bonded thermocouple approach is employed to accurately determine semiconductor surface heating profiles as a function of energy, position, and gas species in a high-current low-energy ion beam etching system. The total beam current is kept at 200 mA and the extractor voltage at 300 V. It is found that the ionic species, the radial position in the ion beam, and the kinetic energy of the ions, all of which effect the ion current density, must be taken into account in recording the temperature rise of the bombarded surface. It is also noted that the occurrence of this temperature rise is dependent on the thermal contacts and heat sinking.

Ringel, S. A.↗
NASA NTRS1985

Electrostatic ion cyclotron waves in a plasma with an ion beam and counterstreaming bulk electrons - Waves in the zero-frequency band

A common feature of the auroral plasma in the region above field-aligned (parallel) potential drops are electrostatic hydrogen cyclotron (EHC) waves. The present paper has the objective to show that wave excitation in the zero-frequency band can occur when the ion beams and the current-carrying bulk electrons counterstream. The instability mechanism involves the Landau interaction of the slow (negative energy) ion-beam-cyclotron waves with the drifting electrons and also with the target (background) ions. Only the latter resonant interaction between the beam and the target ions was considered by Okuda and Nishikawa (1984). In this study, it is shown that an electron drift makes an additional unstable contribution to the waves in the zero-frequency band, including those discussed by Okuda and Nishikawa.

Singh, N.↗
NASA NTRS2005

METHOD OF PRODUCING AND ACCELERATING AN ION BEAM

A method of producing and accelerating an ion beam comprising the steps of providing a magnetic field with a cusp that opens in an outward direction along a centerline that passes through a vertex of the cusp: providing an ionizing gas that sprays outward through at least one capillary-like orifice in a plenum that is positioned such that the orifice is on the centerline in the cusp, outward of the vortex of the cusp; providing a cathode electron source, and positioning it outward of the orifice and off of the centerline; and positively charging the plenum relative to the cathode electron source such that the plenum functions as m anode. A hot filament may be used as the cathode electron source, and permanent magnets may be used to provide the magnetic field.

Foster, John E.↗
NASA NTRS2001

Fast prototyping of high-aspect ratio, high-resolution x-ray masks by gas-assisted focused ion beam

The capacity of chemically-assisted focused ion beam (fib) etching systems to undertake direct and highly anisotropic erosion of thin and thick gold (or other high atomic number [Z])coatings on x-ray mask membranes/substrates provides new levels of precision, flexibility, simplification and rapidity in the manufacture of mask absorber patterns, allowing the fast prototyping of high aspect ratio, high-resolution masks for deep x-ray lithography.

fast prototyping of high-aspect ratio high-resolut↗
DOE OSTI2023

High–Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non-classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Nozzle geometry optimization for high-current aluminum ion beam acceleration via direct plasma injection scheme

We report the generation of a record aluminum ion beam current exceeding 58 mA at the Al 11+ charge state, accelerated to an energy of 5.5 MeV using the direct plasma injection scheme, which integrates a laser ion source (LIS) with a radio frequency quadrupole (RFQ) accelerator. The effect of nozzle geometry on beam extraction was systematically investigated using 8 and 12 mm tapered designs and an 18 mm cylindrical configuration. The 18 mm nozzle achieved the highest Al 11+ beam current, while the 12 mm aperture provided a favorable balance between beam intensity and current density. Beam extraction simulations confirmed effective RFQ matching across multiple charge states, and solenoidal field tuning further enhanced plasma collimation. This work not only establishes a new benchmark for high-current ion beam generation but also provides a fundamental understanding of plasma–beam interface dynamics crucial for the next generation of high-intensity particle accelerators, particularly those employing LIS-RFQ systems.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1981

Ion beam applications research - A 1981 summary of Lewis Research Center programs

In 1975 the NASA's Lewis Research Center initiated a technology specific spinoff program to more broadly utilize benefits resulting from ion thruster technology. An Ion Beam Applications Research (IBAR) program was organized to enable the development of new or improved materials, products, and processes through the nonpropulsive application of ion thruster technology. Focused efforts to identify, evaluate, develop and transfer applications to the user community were conducted. A summary of the NASA Lewis Research Center's in-house, grant, and contract projects involving IBAR is given. Specific application efforts utilizing ion beam sputter etching, deposition, and texturing are discussed as well as ion source and component technology applications.

Banks, B. A.↗
DOE OSTI2023

Hybrid Simulation of Proton Cyclotron Waves Upstream of Mars Generated by Pickup Ion Beam Distribution

Linear instability analysis as well as a corresponding two‐dimensional hybrid simulation are performed to examine the excitation of the proton cyclotron waves observed upstream of Mars. The waves are believed to be excited by the pickup ions produced from the ionization of the Martian hydrogen exosphere. And previous statistical analysis of wave observations suggested that the waves are mostly related to pickup ion beam velocity distributions. While earlier linear instability analysis of pickup ion beam distributions has mainly been focused on the parallel unstable modes, our analysis reveals that the maximum growth rate occurs at very oblique propagation. The corresponding hybrid simulation confirms the linear analysis results and further demonstrates that the pickup ions are scattered toward an isotropic shell velocity distribution by the waves excited. Interestingly, the waves at oblique propagation gradually damp out and the system is eventually dominated by waves of quasi‐parallel propagation.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1989

Pulsed ion beam investigation of the kinetics of surface reactions

Pulsed ion beam measurements of the kinetics of surface reactions are discussed for the case where the width of the ion pulse is comparable to the measured reaction time, but short compared to the time between successive pulses. Theoretical expressions are derived for the time dependence of the ion-induced signals for linear surface reactions. Results are presented for CO emission from surface carbon and CF emission from Teflon induced by oxygen ion bombardment. The strengths and limitations of this technique are described.

Horton, C. C.↗
NASA NTRS1982

Ion-beam-induced topography and surface diffusion

It is pointed out that the development of surface topography along with enhanced surface and bulk diffusion processes accompanying ion bombardment have generated growing interest among users of ion beams and plasmas for thin film or material processing. Interest in these processes stems both from attempts to generate topographic changes for specific studies or applications and from the need to suppress or control undesirable changes. The present investigation provides a summary of the current status of impurity-induced texturing, with emphasis on recent developments. Particular attention is given to the texturing accompanying deposition of an impurity material onto a solid surface while simultaneously etching the surface with an ion beam. A description of experimental considerations is provided, and a thermal-diffusion model is discussed along with the development of sputter cones, and aspects of impact-enhanced surface diffusion.

Robinson, R. S.↗
NASA NTRS1976

Ion beam sputter modification of the surface morphology of biological implants

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion beam sputtered surfaces.

Weigand, A. J.↗