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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Targeting the SH2-Kinase Interface in Bcr-Abl Inhibits Leukemogenesis
Chronic myelogenous leukemia (CML) is caused by the constitutively active tyrosine kinase Bcr-Abl and treated with the tyrosine kinase inhibitor (TKI) imatinib. However, emerging TKI resistance prevents complete cure. Therefore, alternative strategies targeting regulatory modules of Bcr-Abl in addition to the kinase active site are strongly desirable. Here, we show that an intramolecular interaction between the SH2 and kinase domains in Bcr-Abl is both necessary and sufficient for high catalytic activity of the enzyme. Disruption of this interface led to inhibition of downstream events critical for CML signaling and, importantly, completely abolished leukemia formation in mice. Furthermore, disruption of the SH2-kinase interface increased sensitivity of imatinib-resistant Bcr-Abl mutants to TKI inhibition. An engineered Abl SH2-binding fibronectin type III monobody inhibited Bcr-Abl kinase activity both in vitro and in primary CML cells, where it induced apoptosis. This work validates the SH2-kinase interface as an allosteric target for therapeutic intervention.
A generic method for interfacing IEDs using low voltage interfaces to real-time simulators with hardware in the loop
This study presents an interface method (IM) to interconnect real-time simulators (RTSs) without amplifiers for different intelligent electronic devices (IEDs), such as protective relays, smart meters, and other devices. It is a significant topic for the power systems protection community because there are many protection devices with different requirements. These protection devices have pinouts that measure bus voltages/currents and breaker pole states and generate trip/close pulse signals. Most of the emulation test beds with RTSs and HIL need amplifiers to connect IEDs from different product manufacturers because the low-voltage interface levels are not available in some instruction manuals. Additionally, commercial amplifiers have cutoff frequency limitations and have an excessive cost when several IEDs are wired onto test beds. Then, the validation of protection and control systems with RTSs and IEDs in the loop from different vendors without amplifiers results in an unfeasible alternative. In this paper, the IM was based on using an interface box, power source, and RTS to identify IED inputs/outputs. Here, the sequence to recognize IED pinouts and calculate the current/voltage scaling factors is described. The IM was validated satisfactorily with RTS and a protection device (with unknown pinouts) in the loop.
A phase field dislocation dynamics model for a bicrystal interface system: An investigation into dislocation slip transmission across cube-on-cube interfaces
In this study, we present a phase field dislocation dynamics formulation designed to treat a system comprised of two materials differing in moduli and lattice parameters that meet at a common interface. We apply the model to calculate the critical stress τ crit required to transmit a perfect dislocation across the bimaterial interface with a cube-on-cube orientation relationship. The calculation of τ crit accounts for the effects of: 1) the lattice mismatch (misfit or coherency stresses), 2) the elastic moduli mismatch (Koehler forces or image stresses), and 3) the formation of the residual dislocation in the interface. Our results show that the value of τ crit associated with the transmission of a dislocation from material 1 to material 2 is not the same as that from material 2 to material 1. Dislocation transmission from the material with the lower shear modulus and larger lattice parameter tends to be easier than the reverse and this apparent asymmetry in τ crit generally increases with increases in either lattice or moduli mismatch or both. In efforts to clarify the roles of lattice and moduli mismatch, we construct an analytical model for τcrit based on the formation energy of the residual dislocation. We show that path dependence in this energetic barrier can explain the asymmetry seen in the calculated τ crit values.
Molecular simulation of structure and diffusion at smectite-water interfaces: Using expanded clay interlayers as model nanopores
In geologic settings relevant to a number of extraction and potential sequestration processes, nanopores bounded by clay mineral surfaces play a critical role in the transport of aqueous species. Solution structure and dynamics at clay–water interfaces are quite different from their bulk values, and the spatial extent of this disruption remains a topic of current interest. We have used molecular dynamics simulations to investigate the structure and diffusion of aqueous solutions in clay nanopores approximately 6 nm thick, comparing the effect of clay composition with model Na-hectorite and Na-montmorillonite surfaces. In addition to structural properties at the interface, water and ion diffusion coefficients were calculated within each aqueous layer at the interface, as well as in the central bulk-like region of the nanopore. The results show similar solution structure and diffusion properties at each surface, with subtle differences in sodium adsorption complexes and water structure in the first adsorbed layer due to different arrangements of layer hydroxyl groups in the two clay models. Interestingly, the extent of surface disruption on bulk-like solution structure and diffusion extends to only a few water layers. Additionally, a comparison of sodium ion residence times confirms similar behavior of inner-sphere and outer-sphere surface complexes at each clay surface, but ~1% of sodium ions adsorb in ditrigonal cavities on the hectorite surface. Thus, the presence of these anhydrous ions is consistent with highly immobile anhydrous ions seen in previous nuclear magnetic resonance spectroscopic measurements of hectorite pastes.
Elastic NaxMoS2-carbon-BASE triple interface direct robust solid-solid interface for all-solid-state Na-S batteries
The promises of all-solid-state (ASS) sodium batteries for the next generation energy storage are widely recognized but their developments have been severely constrained by the difficulties to design favorable solid-solid interfaces for unhindered Na-ion transport. Using the most promising ß?-Al2O3 solid state electrolyte (BASE) as a platform, we demonstrate here a triple nanojunction strategy that provides simultaneous strong Na adhesion and continuous Na-ions diffusion at solid-solid interface. Such triple junctions (NaxMoS2-carbon-BASE) were constructed by adhering ternary composite Na anodes containing dispersed 3 wt% MoS2 and 3 wt% carbon on BASE, and provide nearly complete adhesion of Na on BASE with a much smaller contact angle (~ 45o vs. 120o of pristine Na). The composite Na anodes exhibited ~ 3 times improved elastic property and the synergy of NaxMoS2 and carbon provides the required ionic and electronic diffusion channels at solid-solid interface, which significantly improve Na utilization and resist premature failure due to loss of solid-solid contact as Na shrink during high capacity stripping. As a result, Na metal at the triple junction exhibited more than five time reduced charge transfer resistance and at least 200 hours stable battery cycling at practical current densities. The novel anode architecture also enabled high capacity cycling of prototype ASS sodium sulfur batteries when coupled with advanced sulfur cathodes containing intrinsic Na-ions diffusion channels and redox catalytic mediators, leading to stable cycling with specific capacity of 1110 mAh g-1.
Surfactant-enhanced heterogeneity of the aqueous interface drives water extraction into organic solvents
Liquid/liquid extraction (LLE) is one of the most industrially relevant separations methods. Adsorbed surfactant is demonstrated to enhance interfacial heterogeneity and lead to water protrusions that form the basis for transport into the organic phase.
Creating stable interfaces between reactive materials: titanium nitride protects photoabsorber–catalyst interface in water-splitting photocathodes
The development of a solar-driven water splitting device that replaces costly precious metals, while achieving stable high performance, is a major challenge. Transition metal phosphides are active and low-cost catalysts for the hydrogen evolution reaction (HER), although, none thus far have exhibited stable performance when interfaced with semiconductors. In this work, we report on a monolithic junction consisting of cubic-NiP 2 :TiN:Si, fabricated using both commercial and custom Si photovoltaics. Stable performance is achieved using an ultrathin film of crystalline TiN that effectively hinders atomic diffusion between interfaces during fabrication. Crystalline cubic-NiP 2 deposited on TiN/n + p-Si retains 97% of the bare Si photovoltage, comparable saturation current density to bare Si, and has a turnover frequency of 1.04 H 2 per site per s at -100 mV applied potential. In acid, it requires only -150 mV additional overpotential compared to the benchmark, Pt/TiN/n + p-Si, to reach a HER photocurrent density of -10 mA cm -2 . This photocathode maintains a stable H 2 photocurrent (±10%) for at least 125 hours, the duration of testing. When the same layers are fabricated on a commercial Si solar cell, this photocathode produced double the photocurrent density (36.3 mA cm -2 , under simulated 1.5 AM G illumination). Physical characterization gives detailed information on the properties responsible for the observed activity and durability of these interfaces. In general, the thin-film methodology presented here is widely applicable, demonstrates superior activity, and achieves long-term stability.
A multi-functional interface derived from thiol-modified mesoporous carbon in lithium–sulfur batteries
Li–S batteries hold great promise as the utility of a thiol-based interface facilitates LiPS-trapping and improves the electrolyte wetting.
Open-source python-OpenDSS interface for hybrid simulation of PV impact studies
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Hematite(001)-liquid water interface from hybrid density functional-based molecular dynamics
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Disorder controlled superconductivity at YBa2Cu3O7/SrTiO3 interfaces
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Model of two-dimensional electron gas formation at ferroelectric interfaces
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Interface Structure, Band Alignment, and Built-In Potentials at LaFeO 3 / n - SrTiO 3 Heterojunctions
We demonstrate that LaFeO 3 /n-SrTiO 3 (001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and built-in potentials within the LaFeO 3 layer of the same sign. However, heterojunctions with the TiO20-LaO+ interface structure attract electronic charge from the n-STO substrate, whereas those with the SrO0-FeO2-1 interface structure do not. These results suggest that the latter would more effectively facilitate photogenerated electron-hole pair separation than the former, an important result for photoelectrochemical water splitting
Solid–Liquid Phase Transition in the Octadecanoic Acid Film Adsorbed on the Toluene–Water Interface
The structure of the soluble protonated (pH = 2) octadecanoic acid film adsorbed on the saturated hydrocarbon (n-hexane)–water and aromatic hydrocarbon (toluene)–water interfaces is studied by X-ray reflectometry using synchrotron radiation. The experimental data demonstrate that a solid phase of a Gibbs monolayer 26 ± 1 Å thick, in which aliphatic tails are perpendicular to the surface and the area per molecule is A = 18 ± 2 Å{sup 2}, is formed in the film at the n-hexane–water interface. The solid monolayer on the toluene–water interface in the adsorbed film melts when temperature increases, and this transition is caused by disordering of the hydrocarbon tails of the acid. During the solid–liquid transition, the Gibbs monolayer thickness remains almost the same, 22 ± 1 Å. In the solid phase, we have A = 20 ± 2 Å{sup 2}, and the angle of deviation of the molecular tails from the normal to the surface is about 30°. The density of the liquid monolayer phase with A = 24 ± 2 Å{sup 2} corresponds to liquid n-octadecane.
The electrical behavior of GaAs-insulator interfaces - A discrete energy interface state model
The relationship between the electrical behavior of GaAs Metal Insulator Semiconductor (MIS) structures and the high density discrete energy interface states (0.7 and 0.9 eV below the conduction band) was investigated utilizing photo- and thermal emission from the interface states in conjunction with capacitance measurements. It was found that all essential features of the anomalous behavior of GaAs MIS structures, such as the frequency dispersion and the C-V hysteresis, can be explained on the basis of nonequilibrium charging and discharging of the high density discrete energy interface states.
Interfacing the expert: Characteristics and requirements for the user interface in expert systems
Because expert systems deal with new sets of problems presenting unique interface requirements, special issues requiring special attention are presented to user interface designers. External knowledge representation (how knowdedge is represented across the user interface), modes of user-system interdependence (advisory, cooperative, and autonomous), and management of uncertainty (deciding what actions to take or recommend based on incomplete evidence) are discussed.