Highly efficient, high speed vertical photodiodes based on few-layer MoS 2
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Rapid solidification (RS) processing, as a production method, offers a variety of unique properties based on far-from-equilibrium microstructures obtained through rapid cooling rates. In this study, we seek to investigate the microstructures and properties of a novel Al-alloy specifically designed for high temperature mechanical stability. Synthesis of, AlFe{sub 11.4}Si{sub 1.8}V{sub 1.6}Mn{sub 0.9} (wt.%), was performed by two approaches: rotating cup atomization (“shot”) and melt spinning (“flake”). These methods were chosen because of their ability to produce alloys with tailored microstructures due to their inherent differences in cooling rate. The as-solidified precursor materials were microstructurally characterized with electron microscopy. The results show that the higher cooling rate flake material exhibited the formation of nanocrystalline regions as well additional phase morphologies not seen in the shot material. Secondary dendritic branching in the flake material was on the order of 0.1–0.25 μm whereas branching in the shot material was 0.5–1.0 μm. Consolidated and extruded material from both precursor materials was mechanically evaluated at both ambient and high (300 °C) temperature. The consolidated RS flake material is shown to exhibit higher strengths than the shot material. The ultimate tensile strength of the melt spun flake was reported as 544.2 MPa at room temperature and 298.0 MPa at 300 °C. These results forecast the ability to design alloys and processing approaches with unique non-equilibrium microstructures with robust mechanical properties at elevated temperatures. - Highlights: • A novel alloy, AlFe{sub 11.4}Si{sub 1.8}V{sub 1.6}Mn{sub 0.9} was fabricated by rapid solidification. • Room temperature yield strength exceeded 500 MPa. • Elevated temperature (300 °C) yield strength exceeded 275 MPa. • Forging, after extrusion of the alloy resulted in microstructural coarsening. • Decreased strength and ductility was identified as a result of forging.
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The pentazolates, the last all-nitrogen members of the azole series, have been notoriously elusive for the last hundred years despite enormous efforts to make these compounds in either gas or condensed phases. Here, we report a successful synthesis of a solid state compound consisting of isolated pentazolate anions N5–, which is achieved by compressing and laser heating cesium azide (CsN3) mixed with N2 cryogenic liquid in a diamond anvil cell. The experiment was guided by theory, which predicted the transformation of the mixture at high pressures to a new compound, cesium pentazolate salt (CsN5). Electron transfer from Cs atoms to N5 rings enables both aromaticity in the pentazolates as well as ionic bonding in the CsN5 crystal. This work provides critical insight into the role of extreme conditions in exploring unusual bonding routes that ultimately lead to the formation of novel high nitrogen content species.
Highly textured tin(II) sulfide thin films are prepared from a nanocrystal ink comprised of high-aspect-ratio nanosheets. The orthorhombic nanosheets are synthesized colloidally to isolate lateral growth and minimize the presence of alternate crystal phases. The tin sulfide films deposited from the nanosheets exhibit pure elemental composition, micrometer-sized grains, and a remarkable degree of texturing. The films consist of lamellar stacking of nanosheets with some intercalation, and the average sheet thickness is ~30 nm. The SnS films have an indirect band gap of 1.23 eV, and density functional theory calculations indicate minimal quantum confinement contributions. The anisotropic electronic properties of tin sulfide are greatly intensified in films formed by this process, yielding an in-plane mobility of 5.7 cm 2 /(V s) but an out-of-plane resistivity as high as 30 kΩ cm. This work represents a new strategy for nanocrystal inks in which the nanocrystal morphology is tailored to direct film orientation, grain size, and transport properties. The method provides a route for the deposition of high-quality, layered semiconductor thin films with applications in photovoltaics and two-dimensional (2-D) electronics.