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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

ALD-Derived WO 3– x Leads to Nearly Wake-Up-Free Ferroelectric Hf 0.5 Zr 0.5 O 2 at Elevated Temperatures

Breaking the memory wall in advanced computing architectures will require complex 3D integration of emerging memory materials such as ferroelectrics─either within the back-end-of-line (BEOL) of CMOS front-end processes or through advanced 3D packaging technologies. Achieving this integration demands that memory materials exhibit high thermal resilience, with the capability to operate reliably at elevated temperatures, such as 125°C, due to the substantial heat generated by front-end transistors. However, silicon-compatible HfO 2 -based ferroelectrics tend to exhibit antiferroelectric-like behavior in this temperature range, accompanied by a more pronounced wake-up effect, posing significant challenges to their thermal reliability. Here, we report that by introducing a thin tungsten oxide (WO 3–x ) layer─known as an oxygen reservoir─and carefully tuning its oxygen content, ultrathin Hf 0.5 Zr 0.5 O 2 (5 nm) films can be made robust against the ferroelectric-to-antiferroelectric transition at elevated temperatures. This approach not only minimizes polarization loss in the pristine state but also effectively suppresses the wake-up effect, reducing the required wake-up cycles from 10 5 to only 10 at 125°C, a qualifying temperature for back-end memory integrated with front-end logic, as defined by the JEDEC standard. First-principles density functional theory (DFT) calculations reveal that WO 3 enhances the stability of the ferroelectric orthorhombic phase (o-phase) at elevated temperatures by increasing the tetragonal-to-orthorhombic phase energy gap and promoting favorable phonon mode evolution, thereby supporting o-phase formation under both thermodynamic and kinetic constraints.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quantum chemical topology and natural bond orbital analysis of M–O covalency in M(OC 6 H 5 ) 4 (M = Ti, Zr, Hf, Ce, Th, Pa, U, Np)

Covalency is complex yet central to our understanding of chemical bonding, particularly in the actinide series. In this work, we assess covalency in a series of isostructural d and f transition element compounds M(OC 6 H 5 ) 4 (M = Ti, Zr, Hf, Ce, Th, Pa, U, Np) using scalar relativistic hybrid density functional theory in conjunction with the Natural Bond Orbital (NBO), quantum theory of atoms in molecules (QTAIM) and interacting quantum atoms (IQA) approaches. The IQA exchange–correlation covalency metric is evaluated for the first time for actinides other than uranium, in order to assess its applicability in the 5f series. It is found to have excellent correlation with NBO and QTAIM covalency metrics, making it a promising addition to the computational toolkit for analysing metal–ligand bonding. Our range of metrics agree that the actinide-oxygen bonds are the most covalent of the elements studied, with those of the heavier group 4 elements the least. Within the early actinide series, Th stands apart from the other three elements considered, being consistently the least covalent.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Galactic chemical evolution with the short-lived isotopes 53 Mn, 60 Fe, 182 Hf, and 244 Pu

We run a three-dimensional Galactic chemical evolution (GCE) model to follow the propagation of 53 Mn from supernovae of type Ia (SNIa), 60 Fe from core-collapse supernovae (CCSNe), 182 Hf from intermediate mass stars (IMSs), and 244 Pu from neutron star mergers (NSMs) in the Galaxy. We compare the GCE of these short-lived radioactive isotopes (SLRs) to recent detections on the deep-sea floor. We find that although these SLRs originate from different sites, they often arrive conjointly on Earth.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2020

Structure and good piezoelectric performance in the complex system of Pb[(Zn,Ni)Nb]O 3 –Pb[(In,Yb)Nb]O 3 –Pb(Zr,Hf,Ti)O 3

High-performance piezoelectrics are always demanded for the high-end application. In this study, a complex piezoelectric system of 0.49Pb(Zn 1/2 Ni 1/2 ) 1/3 Nb 2/3 O 3 – x Pb(In 1/2 Yb 1/2 ) 1/2 Nb 1/2 O 3 –(0.51 – x )Pb(Zr 1/2 Hf 1/2 ) 0.1 Ti 0.9 O 3 (0.16 ≤ x ≤ 0.23) was fabricated through the solid-state method. The structure, ferroelectric, piezoelectric, and dielectric properties were investigated. The optimum piezoelectric coefficient d 33 of 761 pC/N, high Curie temperature of 169 °C, dielectric permittivity ( ε r ) of 4557, and electromechanical coupling coefficient ( k p ) of 63% were found at the morphotropic phase boundary composition of x = 0.19, which are superior to other complex piezoelectric materials. In particular, a significant large-signal d 33 * of 913 pm/V and low strain hysteresis (6%) was obtained in the temperature range of 20–170 °C. Temperature-dependent x-ray diffraction (XRD) has demonstrated that good temperature stability is put down to the structure stability. The agreement between the calculated lattice strain from in situ high-energy synchrotron XRD data and the macroscopic measurements suggests that the large lattice strain has a dominant contribution to the high piezoelectric response. The high piezoelectric performance and good temperature stability makes it potential for application.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Thermal evolution of ferroelectric behavior in epitaxial Hf 0.5 Zr 0.5 O 2

In this paper, we report a cryogenic-temperature study on the evolution of the ferroelectric properties of epitaxial Hf 0.5 Zr 0.5 O 2 thin films on silicon. Wake-up, endurance, and fatigue of these films are found to be intricately correlated, strongly hysteretic, and dependent on available thermal energy. Field-dependent measurements reveal a decrease in polarization with temperature, which has been determined not to be an intrinsic change of the material property, rather a demonstration of the increase in the coercive bias of the material. Our findings suggest that a deficiency in thermal energy suppresses the mobility of defects presumed to be oxygen vacancies during wake-up and trapped injected charge during fatigue, which is responsible for polarization evolution during cycling. This permits accelerated wake-up and fatigue effects at high temperatures where thermal energy is abundant but delays these effects at cryogenic temperatures.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ferroelectric polarization retention with scaling of Hf 0.5 Zr 0.5 O 2 on silicon

In this paper, we investigate the polarization retention of Hf 0.5 Zr 0.5 O 2 (HZO)-based metal–ferroelectric–insulator–Si (MFIS) capacitors with scaling of the ferroelectric (FE) layer thickness from 5 nm to 20 nm. The capacitors have a constant interface layer capacitance of ~24 μF/cm 2 , developed due to the integration of HZO on a degenerated Si as a bottom conducting electrode. It is observed that 20 nm HZO films show a small change (~5%) in FE polarization (P FE ) between short (10 μs) and long (6 s) retention time, while 5-nm-thick films exhibit a large difference (~90%). Furthermore, the dependence of P FE retention loss on the FE thickness can be understood by the presence of a built-in electric field in the FE layer, generated due to charge continuity between the FE and the interface layers in the ground state without any external bias. A direct experimental observation also confirms that a residual voltage is developed at the node between the metal–ferroelectric–metal and metal–oxide–semiconductor capacitors connected in series, in the ground state with zero external bias. It is expected that a proper understanding of the built-in field developed in the FE layer in an MFIS stack is crucial for FE memory retention characteristics.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Correlation between ferroelectricity and ferroelectric orthorhombic phase of Hf x Zr 1-x O 2 thin films using synchrotron x-ray analysis

The change in the interplanar spacing ( d -spacing) including the ferroelectric orthorhombic (O) phase in the low-temperature fabricated Hf x Zr 1-x O 2 (HZO) films was studied using synchrotron grazing-incidence wide-angle x-ray scattering analysis. The 10-nm-thick HZO films were fabricated by thermal and plasma-enhanced atomic layer deposition (TH- and PE-ALD) methods using H 2 O gas and O 2 plasma as oxidants, respectively, and a post-metallization annealing (PMA) was performed at 300–400 °C. The d -spacing of the mixture of (111)-, (101)-, and (111)-planes of O, tetragonal (T), and cubic (C) phases, respectively, for the TH- and PE-ALD HZO films increased up to 2.99 Å with an increase in PMA temperature, while the d -spacing estimated by conventional x-ray diffraction was 2.92 Å regardless of the PMA temperature. The remanent polarization (2 P r = P r + - P r - ) of the HZO films increased as the PMA temperature increased. It is clear that the 2 P r value satisfied a linear relationship as a function of the d -spacing of O(111)/T(101)/C(111) phases. Furthermore, the wake-up effect was found to depend on the ferroelectric O phase formation. The wake-up effect was significantly reduced in both the TH- and PE-ALD HZO films after the PMA at 400 °C due to the increase in the ferroelectric O phase formation. The leakage current density ( J )–electric field properties of the PE-ALD HZO film with the lowest d -spacing were divided into three steps, such as low, middle, and large J values, in the wake-up (10 3 cycles), pristine (10 0 cycle), and fatigue (10 7 cycles) states, respectively. Therefore, an analysis of the ferroelectric O phase is very important for understanding the ferroelectricity including endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Elaborated thermochemical treatment of HF, CO, N 2 , and H 2 O: Insight into HEAT and its extensions

Here, empirical, highly accurate non-relativistic electronic total atomization energies (eTAEs) are established by combining experimental or computationally converged treatments of the nuclear motion and relativistic contributions with the total atomization energies of HF, CO, N 2 , and H 2 O obtained from the Active Thermochemical Tables. These eTAEs, which have estimated (2σ) uncertainties of less than 10 cm -1 (0.12 kJ mol -1 ), form the basis for an analysis of high-level ab initio quantum chemical calculations that aim at reproducing these eTAEs for the title molecules. The results are then employed to analyze the performance of the high-accuracy extrapolated ab initio thermochemistry, or High-Accuracy Extrapolated Ab Initio Thermochemistry (HEAT), family of theoretical methods. The method known as HEAT-345(Q), in particular, is found to benefit from fortuitous error cancellation between its treatment of the zero-point energy, extrapolation errors in the Hartree-Fock and coupled cluster contributions, neglect of post-(T) core-correlation, and the basis-set error involved in higher-level correlation corrections. In addition to shedding light on a longstanding curiosity of the HEAT protocol—where the cheapest HEAT-345(Q) performs comparably to the theoretically more complete HEAT-456QP procedure—this study lays the foundation for extended HEAT variants that offer substantial improvements in accuracy relative to the established approaches.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Thermal transport and mixed valence in ZrTe3 doped with Hf and Se

Two-dimensional transition metal trichalcogenides (TMTCs) feature covalently bonded metal-chalcogen layers separated by the van der Waals (vdW) gap. Similar to transition metal dichalcogenides (TMDCs), TMTCs often host charge density waves (CDWs) and superconductivity, but unlike TMDCs, atomic chains in the crystal structure give rise to quasi one-dimensional (quasi 1D) conduction. ZrTe3 features the CDW below TCDW = 63 K and filamentary superconductivity below 2 K that can be enhanced by pressure or chemical substitution. Here, we report the presence of mixed valent Zr2+ and Zr4+ atoms in ZrTe3 crystals that are reduced by doping in ZrTe3−xSex and Zr1−yHfyTe3. Superconductivity is enhanced via disorder in Te2-Te3 atomic chains that are associated with CDW formation. Hf substitution on the Zr atomic site enhances TCDW due to unperturbed Te2-Te3 chain periodicity and enhanced electron-phonon coupling. Weak electronic correlations in ZrTe3−xSex are likely governed by the lattice contraction effects.

Liu, Yu (ORCID:0000000188862876)↗
DOE OSTI2022

Robust low-temperature (350 °C) ferroelectric Hf 0.5 Zr 0.5 O 2 fabricated using anhydrous H 2 O 2 as the ALD oxidant

Here, in this Letter, the robust ferroelectric properties of low-temperature (350 °C) Hf 0.5 Zr 0.5 O 2 (HZO) films are investigated. We demonstrate that the lower crystallization temperature of HZO films originates from a densified film deposition with an anhydrous H 2 O 2 oxidant in the atomic layer deposition process. As a consequence of this densification, H 2 O 2 -based HZO films showed completely crystallinity with fewer defects at a lower annealing temperature of 350 °C. This reduction in the crystallization temperature additionally suppresses the oxidation of TiN electrodes, thereby improving device reliability. The low-temperature crystallization process produces an H 2 O 2 -based HZO capacitor with a high remanent polarization ( P r ), reduced leakage current, high breakdown voltage, and better endurance. Furthermore, while an O 3 -based HZO capacitor requires wake-up cycling to achieve stable P r , the H 2 O 2 -based HZO capacitor demonstrates a significantly reduced wake-up nature. Anhydrous H 2 O 2 oxidant enables the fabrication of a more reliable ferroelectric HZO device using a low process thermal budget (350 °C).

36 MATERIALS SCIENCE↗
DOE OSTI2024

Photoinduced patterning of oxygen vacancies to promote the ferroelectric phase of Hf 0.5 Zr 0.5 O 2

Photoinduced reductions in the oxygen vacancy concentration were leveraged to increase the ferroelectric phase fraction of Hf 0.5 Zr 0.5 O 2 thinfilms. Modest ( ~ 2 — 77 pJ=cm 2 ) laser doses of visible light (488 nm, 2.54 eV) spatially patterned the concentration of oxygen vacancies as monitored by photoluminescence imaging. Local, tip-based, near-field, nanoFTIR measurements showed that the photoinduced oxygen vacancy concentration reduction promoted formation of the ferroelectric phase (space group Pca2 1 ), resulting in an increase in the piezoelectric response measured by piezoresponse force microscopy. Photoinduced vacancy tailoring provides, therefore, a spatially prescriptive, postsynthesis, and low-entry method to modify phase in HfO 2 -based materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Modifications in the charge trap landscape in Hf 0.5 Zr 0.5 O 2 as a function of oxygen vacancy concentration observed with photoemission electron microscopy

Oxygen vacancies in Hf x Zr (1-x) O 2 (HZO) both contribute to stabilization of the ferroelectric orthorhombic phase and promote leakage pathways that limit the endurance of devices based on the material. Here, for this reason, the defect states of oxygen vacancies were investigated using photoemission electron microscopy (PEEM) and photoluminescence spectroscopy (PL), as their concentration was varied via ex situ laser exposure. Following a controlled oxygen vacancy reduction via visible (2.54 eV) laser dosing of HZO, deep-ultraviolet (DUV, 5.82 eV) PEEM was used to spatially probe the resulting mid-gap defect states and work function. Work function was found to increase monotonically with the laser-induced reduction in oxygen vacancy concentration culminating in a total increase near 70 meV. The change implies a Fermi level shift toward the valence band as the total available electron-filled charge states are reduced with the removal of oxygen vacancies. A reduction in charge states is corroborated by the observed lessening of both photoemission and photoluminescence intensities after laser dosing. The deduced position of the Fermi level is within a band of near-conduction band defect states produced by oxygen vacancies that are linked to endurance limiting leakage currents. Together, these results directly identify the primary role of oxygen vacancies on the defect states in HZO while demonstrating that laser exposure can be used for their modification.

42 ENGINEERING↗
DOE OSTI2026

Electrode chemistry impact on retention performance of ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x ) capacitors

Polarization retention of 10 nm thick ferroelectric hafnium zirconium oxide (Hf 0.5 Zr 0.5 O 2−x , HZO) capacitors with W and TaN electrodes is investigated over temperatures ranging from 85 to 150 °C. Same state and opposite state polarization margins for devices with W electrodes show minimal retention loss after 10 5 at 150 °C. The devices capped with TaN electrodes show excellent same state retention, but the opposite state polarization margin in the TaN-electrode devices displays 40% retention loss at 150 °C after 10 5 s. The TaN-capped devices exhibit a more pronounced imprint, which is attributed to an increased oxygen vacancy content (compared to W-capped devices). The increased oxygen vacancy content in the TaN-capped devices is supported by photoluminescence and leakage current measurements. In addition, TaN-capped devices have chemically diffuse electrode–HZO interfaces; more abrupt interfaces are present in the W-capped devices. The presence of interfacial phases in the TaN-capped devices may lead to larger depolarization fields due to reduced charge screening. The results from this study provide further evidence that for HZO ferroelectric devices the electrode can significantly impact polarization retention behavior due to differences in oxygen vacancy concentration and formation of non-ferroelectric interfacial layers.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Comparative analysis of characteristics of a supersonic cw chemical HF laser on molecular fluorine and nitrogen trifluoride

We have experimentally studied the characteristics of a supersonic cw chemical HF laser with a flat nozzle array based on a nozzle – nozzle reagent mixing scheme operating with the use of F{sub 2} – D{sub 2} – He and NF{sub 3} – D{sub 2} – He fuel compositions in an atomic fluorine generator. The active medium flow field pattern, its gas-dynamic characteristics, and the laser radiation spectrum are considered. The comparison of these characteristics has made it possible to establish a strong impact on the flow field (lasing zone length) of the chemical composition of the combustion products from the atomic fluorine generator. The gas-dynamic parameters of the active medium formed by using a NF{sub 3} – D{sub 2} – He fuel have turned out to be less acceptable in terms of the gas flow pressure recovery than in the case of F{sub 2} – D{sub 2} – He fuel, while the radiation spectrum was more preferable from the viewpoint of passing through the atmosphere. (paper)

36 MATERIALS SCIENCE↗
DOE OSTI2020

Inelastic neutron scattering study of the anisotropic S = 1 spin chain [ Ni ( HF 2 ) ( 3 – Clpyridine ) 4 ] BF 4

[Ni(HF 2 )(3–Clpyridine) 4 ]BF 4 (NBCT) is a one-dimensional, S = 1 spin chain material that shows no magnetic neutron Bragg peaks down to temperatures of 0.1 K. Previous work identified NBCT as being in the Haldane phase and near a quantum phase transition as a function of D/J to the large-D quantum paramagnet phase (QPM), where D is the axial single-ion anisotropy and J is the intrachain superexchange. Herein, inelastic neutron scattering results are presented on partially deuterated, 11B-enriched NBCT polycrystalline samples in zero magnetic field and down to temperatures of 0.3 K. Comparison to density matrix renormalization group calculations yields D/J = 1.51 and a significant rhombic single-ion anisotropy E (E/D ≈ 0.03, E/J ≈ 0.05). Here, these D, J, and E values place NBCT in the large-D QPM phase but precipitously near a quantum phase transition to a long-range ordered phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Paramagnon heat capacity in (Ti,Zr,Hf)NiFe x NiSn half-Heusler composites

As a measure of the temperature response of the energy of matter, the heat capacity $C_p$ is a fundamental thermodynamic property. Its dependence on magnetic field, especially at low temperatures, yields insight into the electronic, phononic, and magnetic states of condensed matter. Here, we present a set of paramagnetic and ferromagnetic (Ti, Zr, Hf)NiFe x Sn half-Heusler composites that exhibit low-field (<3 T) maxima in $C_p$ and higher-field magnetic quenching of the heat capacity at temperatures below 10 K. Using rigorous statistical analysis, we attribute the effect to the existence of paramagnons within the compounds. To explain the lowest-temperature (<4 K), low-field declines in $C_p$, we derive a magnon model up to fourth order in dispersion. While the combined paramagnon and magnon model matches the data well, the fit parameters are significantly underdetermined. Further, we provide a qualitative explanation of the secondary effect based on superconducting phases within the composites. Overall, our work highlights the insight of field-dependent heat capacity studies at fixed temperatures that cannot be as easily gleaned from the temperature-dependent heat capacity at fixed magnetic fields.

36 MATERIALS SCIENCE↗
DOE OSTI2022

High-pressure inelastic neutron scattering study of the anisotropic S = 1 spin chain [ Ni ( HF 2 ) ( 3 - Clpyradine ) 4 ] B F 4

[Ni(HF 2 )(3-Clpyradine) 4 ]BF 4 (NBCT) is a one-dimensional, S=1 spin-chain material that shows no long-range magnetic order down to thermometer temperatures of 0.1 K. Previous ambient pressure inelastic neutron scattering experiments identified NBCT to be in the large-D quantum paramagnetic phase of the D/J phase diagram, where D is the axial single-ion anisotropy and J is the intrachain superexchange. In this work, we extend the previous experiments to a hydrostatic pressure of 0.9 GPa. By comparing to density matrix renormalization group calculations, we find D/J increases from 1.5 to 3.2 as pressure increases from 0 GPa to 0.9 GPa, which pushes the system further into the large-D phase.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗