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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRSDate not supplied

Design of 1 kW Simplified Stirling Controller Using Capacitor-Based Power Factor Correction

Free-piston Stirling convertors hold potential for efficient, reliable thermal to electric power conversion, provided they are paired with a robust controller. This paper outlines work underway on a system-level optimization of a kW controller. Using simplified control and passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is improved through incorporating wide-bandgap gallium nitride (GaN) switches, and PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling space power concepts.

Stirling↗
NASA NTRSDate not supplied

Current Status and Future Plans for Electric Motors and Drives at NASA

Current Status and Future Plans for Electric Motors and Drives at NASA: Our work advances propulsion for aircraft while reducing energy consumption, noise, emissions and the cost of air travel. We are committed to investigating the use of alternative energy sources and improving the safety and expediency of flight. Electrified Aircraft Propulsion (EAP) is the use of propulsors (propellers or fans) driven by electric motors to propel aircraft ranging from air taxis to subsonic transports. NASA is developing technology, aircraft concepts, test aircraft, and ground test facilities to turn this idea from science fiction to reality. Specifically, motors and/or generators (Electric machines) are needed on all electrified aircraft. And NASA is sponsoring or performing work to achieve power densities 2-3 times the state of the art for machines in the MW or larger class. Three major machine types are being developed: permanent magnet, induction, and wound field. Power converters are also an essential component in most EAP aircraft concepts, as they are used to convert from ac to dc power, or vice versa. Silicon carbide and gallium nitride convertors are being developed with conventional cooling as well as a cryogenically cooled converter. Future plans include demonstrating integrated flight-ready systems in both ground and flight tests; collaborating with and leveraging ARPA-E EAP programs; and supporting FAA standards development for market acceptance and safety.

Powertrain↗
NASA NTRSDate not supplied

Optimization, Design, and Demonstration of 1 kW Stirling Controller Using Capacitor-based Power Factor Correction

Free-piston Stirling convertors provide efficient, reliable thermal to electric power conversion, provided they are paired with a reliable controller. This paper outlines work underway on design concepts for kilowatt-class controllers. Using passive power factor correction (PFC) this design explores the possibility of reducing programmatic risk through system simplification. Efficiency is maximized through incorporating wide-bandgap gallium nitride (GaN) switches, and passive PFC volume is minimized through the use of polymer multi-layer capacitors. This work is aimed at exploring new approaches for future Stirling controllers.

Christopher Barth↗
NASA NTRSDate not supplied

Current Status and Future Plans for Electric Motors and Drives at NASA

Our work advances propulsion for aircraft while reducing energy consumption, noise, emissions and the cost of air travel. We are committed to investigating the use of alternative energy sources and improving the safety and expediency of flight. Electrified Aircraft Propulsion (EAP) is the use of propulsors (propellers or fans) driven by electric motors to propel aircraft ranging from air taxis to subsonic transports. NASA is developing technology, aircraft concepts, test aircraft, and ground test facilities to turn this idea from science fiction to- reality. Specifically, motors and/or generators (Electric machines) are needed on all electrified aircraft. And NASA is sponsoring or performing work to achieve power densities 2-3 times the state of the art for machines in the MW or larger class. Three major machine types are being developed: permanent magnet, induction, and wound field. Power converters are also an essential component in most EAP aircraft concepts, as they are used to convert from ac to dc power, or vice versa. Silicon carbide and gallium nitride convertors are being developed with conventional cooling as well as a cryogenically cooled converter. Future plans include demonstrating integrated flight-ready systems in both ground and flight tests; collaborating with and leveraging ARPA-E EAP programs; and supporting FAA standards development for market acceptance and safety.

Aircraft↗
NASA NTRS2022

Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

In this paper, we present the architecture of a Ka-band switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3rd order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider’s space networks.

Rainee N. Simons↗
NASA NTRSDate not supplied

Power Hibernation for Low-Cost Solar Powered Lunar Missions

Because the surface of the Moon drops to cryogenic temperatures, no solar-powered lunar spacecraft have reliably operated beyond a single lunar day. Passive thermal control cannot keep a spacecraft sufficiently warm for the 354-hour lunar night, and active thermal control requires a dramatic increase in battery mass at the expense of payload mass. Extreme conditions seen on the lunar surface suggest a radioisotope solution is ideal, but mass, cost, and schedule are inconsistent with low-cost frequent flight intent of the commercial lunar payload services (CLPS) program. To solve the issue of lunar night survivability without radioisotope sources of power and heat, a lunar power hibernation approach is being developed at the Glenn Research Center, which exploits the ability of common 18650 Lithium-ion cells to passively survive cryogenic freeze-thaw cycles and recover without apparent performance degradation. A key aspect of this hibernation approach is the use of cryogenically operable electronics that safely manage the restoration of the battery thermal environment at lunar dawn. A spacecraft utilizing this strategy will operate into the lunar night on batteries until the state of charge or spacecraft temperature reaches a predetermined threshold. At this point, systems are shut down and the battery is isolated from the main bus to prevent charge or discharge during the freezing and thawing transitions. The system remains passive until lunar dawn, where temperatures can reach as low as 50 K. All electronics must be tolerant to these conditions. When the solar arrays are finally illuminated at lunar dawn, the main bus power electronics will initiate a “cold start” and begin regulating array power. The main bus electronics must be designed to operate at cryogenic temperatures. Array power is used to warm the battery and passive electronics back to operational temperatures. Once batteries are returned to normal temperatures, diagnostics and precharging is performed, as needed, and the battery is reconnected. The overall spacecraft system reboots and returns to nominal operations until lunar night returns. To assure that we can develop batteries suited for many hibernation freeze/thaw cycles, STMD Space Technology Research Grant Program (STRG) has selected two principal investigators that will thoroughly characterize of the Li-ion cell through the freeze-thaw process, investigate degradation mechanisms, and identify potential diagnostic techniques. STMD STRG is also funding an investigation of Gallium-Nitride semiconductors for cryogenic power applications. This work includes physics-informed modeling that considers cryogenic conductivity, carrier mobility, and quantum effects that govern semiconductor performance at cryogenic temperatures. These models can enable engineers to develop accurate cryogenic simulation models that assist in the design of power controls stable over the entire lunar surface temperature range. Meanwhile, Glenn is performing cryogenic testing of batteries and electronics, establishing design guidelines for power applications in extreme cold lunar environment, and potentially developing a hibernation technology demonstrator. The hibernation approach will enable low-cost lunar robotic missions to extend their operating lifetime to many months while minimizing development costs and impact on payload capacity. The need for cryogenically operable electronics is restricted to only main bus power and battery controls, as the majority of systems simply need to passively tolerate cryogenic temperatures. This allows developers to continue to exploit the cost savings of legacy and COTS hardware with minimum modification. For these reasons, lunar power hibernation is a viable near-term solution for lunar night survivability for solar powered commercial landers.

Space power↗
NASA NTRS2023

Extended Temperature Operation of Isolated, Precision Gate Driver, ADuM4120

Electronics used in space missions encounter exposure to extreme temperatures and operation under wide thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and very little data exist on their performance outside their specified range of operation. Extending the temperature range at which electronic parts can operate reliably leads to potential benefits resulting in improving reliability, reducing mass/weight, and simplifying thermal design due to elimination of thermal control elements and fewer parts count. In this work, the performance of an isolated, precision gate driver for controlling power-level transistors, including gallium nitride (GaN) and silicon carbide (SiC) devices, was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance for potential use of this device in space exploration missions under extreme temperature conditions.

Wide Bandgap Power Electronics↗
DOE OSTI2024

Solid state protective smart plug device

A wireless-controlled smart plug device and methods of use and operation, using a solid state switch to provide electrical power from an outlet to a load, and provide protection against overload, short circuit, ground, arc, or voltage surge faults. The switch includes a bidirectional semiconductor switch with two back-to-back connected transistors, such as silicon power MOSFETs, silicon insulated-gate bipolar transistors (IGBTs), silicon carbide (SiC) transistors, or gallium nitride (GaN) transistors, each configured to control the current flow from the electrical receptacle to the external electrical load.

Shen, Zheng↗
DOE OSTI2021

Low voltage drop tunnel junctions grown monolithically by MOCVD

Tunnel junction devices grown monolithically by metal organic chemical vapor deposition were optimized for minimization of the tunnel junction voltage drop. Here, two device structures were studied: an all-GaN homojunction tunnel junction and a graded InGaN heterojunction-based tunnel junction. This work reports a record-low voltage drop in the graded-InGaN heterojunction based tunnel junction device structure achieving a de-embedded tunnel junction voltage drop of 0.17 V at 100 A/cm 2 . The experimental data were compared with a theoretical model developed through technology computer-aided design (TCAD) simulations that offer a physics-based approach to understanding the key components of the design space, which lead to a more efficient tunnel junction.

42 ENGINEERING↗
DOE OSTI2021

Improved forward voltage and external quantum efficiency scaling in multi-active region III-nitride LEDs

Ultra-low voltage drop tunnel junctions (TJs) were utilized to enable multi-active region blue light emitting diodes (LEDs) with up to three active regions in a single device. The multi-active region blue LEDs were grown monolithically by metal-organic chemical vapor deposition (MOCVD) without growth interruption. This is the first demonstration of a MOCVD grown triple-junction LED. Optimized TJ design enabled near-ideal voltage and EQE scaling close to the number of junctions. Furthermore, this work demonstrates that with proper TJ design, improvements in wall-plug efficiency at high output power operation are possible by cascading multiple III-nitride based LEDs.

42 ENGINEERING↗
DOE OSTI2024

Molecular beam epitaxy of superconducting zirconium nitride on GaN substrates

Epitaxial integration of metals and semiconductors can enable enhanced performance and novel functionality. Achieving such pristine interfaces with superconducting materials is of increasing interest for quantum devices and detectors, but the experimental demonstration remains challenging, given the very limited studies on single crystalline systems. To expand the potential materials for these systems, this work explores the deposition of zirconium nitride superconducting thin films on GaN substrates at various temperatures using molecular beam epitaxy. A general trend of decreasing superconducting critical temperature is observed as the deposition temperature is reduced. The optical properties reveal a transition from metallic to dielectric behavior with colder deposition. The plasma frequency of the metallic films is also observed to be a function of growth temperature. These results pave the way for the integration of a highly tunable metal nitride with a well-established semiconductor system.

36 MATERIALS SCIENCE↗
NASA NTRS1997

A Chemical and Structural Study of the AlN-Si Interface

The growth of low defect density heteroepitaxial AlN has great implications for optoelectronic and high power devices since the AlN can be used either as device material or as a buffer layer for the overgrowth of other group-III nitrides. In this work, the results of transmission electron microscopy (TEM) involving both high resolution imaging and electron energy loss spectroscopy (EELS) of AlN/Si layers is reported and the relationship between Si-Al-N interactions and the misorientation of AlN nuclei is elucidated.

epitaxial optoelectronic silicon gallium nitride↗
NASA NTRS1996

A Microstructural Analysis of Orientation Variation in Epitaxial AlN on Si, Its Probable Origin, and Effect on Subsequent GaN Growth

A structural examination of aluminum nitride growth on [111] silicon was carried out using transmission electron microscopy. Electron diffraction indicates that the basal planes of the wurtzitic overlayer mimic the orientation of the close-packed planes of the substrate. However, considerable, random rotation in the basal plane and random out-of-plane tilts were evident. This article examines these issues with a structural examination of AlN and GaN/AlN on silicon and compares the findings to those reported in the literature.

GaN AlN Si epitaxial aluminum gallium nitride↗
DOE OSTI2020

Investigation of Superluminescent Diodes for Smart Lighting Systems. Final Report

The solid-state lighting ecosystem has evolved very rapidly over the last few years, with significant improvements in the technical performance of light-emitting diodes (LEDs) and the commoditization of LED-based lighting fixtures. As the performance of conventional lighting products begins to saturate, there is growing market interest in “Lighting as a Service” applications that will leverage advanced systems to impart new functionalities to lighting and improve energy efficiency, human health, and productivity. These “Smart Lighting” systems will include high-performance light sources, specialized sensors, and dynamic controls to deliver high quality, energy efficient, color tunable lighting with customized spatial light delivery and integrated visible light communication capability. To achieve these capabilities, smart lighting systems will place greater demands on the performance of light sources. Highly efficient sources with additional functionalities compared to conventional LEDs, such as small form factor, large modulation bandwidth, and spatially coherent output beams, will be required. While laser diodes have been proposed as potential sources for smart lighting systems, they also exhibit several properties that pose challenges, such as temporal coherence, extremely high spatial coherence, and ultra-narrow linewidths. To address these issues, we propose an investigation of an alternative device architecture known as a superluminescent diode (SLD). SLDs are similar in form to ridge laser diodes and share many of the same characteristics, such as stimulated emission operation, spatially coherent output, small form factor, and the potential for large modulation bandwidth. However, the operating principle for SLDs is distinct from laser diodes in that SLDs lack a strong cavity feedback mechanism, resulting in spatially coherent but temporally incoherent light output. Thus, SLDs may address the issues with laser diodes for lighting, while simultaneously maintaining some of the desirable characteristics of both laser diodes and LEDs. The objectives of this proposal are to design, grow, and fabricate blue (450 nm) SLDs on polar c-plane and nonpolar m-plane free-standing GaN substrates, and to evaluate their potential as sources in smart lighting systems through basic device characterization and detailed investigations of their efficiency droop and modulation bandwidth. The primary scientific aims of this work are to understand the fundamental role of optical gain in the superluminescent (non-lasing) regime on efficiency droop and modulation bandwidth in III-nitride emitters and to understand the effects of higher optical gain on SLD performance by comparing polar c-plane and nonpolar m-plane SLDs. The University of New Mexico (UNM) will collaborate with Sandia National Laboratories (SNL) and the Center for Integrated Nanotechnologies to design, fabricate, grow, and characterize the SLDs. UNM will perform the design and epitaxial growth, while SNL will focus on the fabrication and device characterization. The novelty of the proposed work includes the first comprehensive theoretical and experimental investigations of efficiency droop and the first investigation of modulation bandwidth in GaN-based emitters operating in the superluminescent regime. Moreover, the comparison of c-plane and m-plane SLDs will enable the first analysis of the effects of higher optical gain on the device performance. The development of high-performance GaN-based SLDs may enable efficiency gains and improved functionality in next-generation smart lighting systems.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2023

Suppressing Carbon Incorporation in Metal–Organic Chemical Vapor Deposition GaN Using High‐Offcut‐Angled Substrates

Carbon (C) is a common impurity that acts as a compensator within GaN grown via metal–organic chemical vapor deposition (MOCVD). Reducing C in GaN will help reduce the compensation level and provide a route to achieve GaN with reliably low effective doping for high-power device applications. GaN grown with fast growth rates on bulk GaN with various offcut angles via conventional-MOCVD (C-MOCVD) and laser-assisted MOCVD (LA-MOCVD) is compared and analyzed. C-incorporation effects are compared through quantitative secondary-ion mass spectroscopy analysis in GaN grown on GaN substrate with offcut angles of 4° and 0.3° toward m-plane over a wide range of growth rates by C-MOCVD and LA-MOCVD. For both growth techniques investigated, a significant reduction in C-incorporation is observed when a high-offcut-angle (4°) substrate is used as compared to a lower-offcut-angle (0.3°) substrate. Furthermore, with C-MOCVD, at the fastest growth condition investigated (17.26 μm h −1 at 0.3°-offcut, 15.25 μm h −1 at 4°-offcut), a reduction in [C] by 21.2X is observed with an increase in the offcut angle from 0.3° to 4°. A 82.6X reduction in [C] is observed with the similar fast growth condition via LA-MOCVD on GaN with 4° offcut angle (9.78 μm h −1 ) as compared to C-MOCVD at 0.3° offcut angle (17.26 μm h −1 ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

ICP etching of GaN microstructures in a Cl 2 –Ar plasma with subnanometer-scale sidewall surface roughness

In this work, substrate temperature, RF power, and ICP power were investigated for their effects on GaN micropillar sidewall roughness and etch characteristics. Elevated substrate temperature was shown to improve the sidewall etch morphology at low RF powers (reduced physical bombardment) and low ICP powers (lower plasma densities). Increased lateral etching is observed with both increased ICP power and substrate temperature, which both act to increase the chemical component of the etch. Etch conditions with a high chemical driving force resulted in faceting along the a-plane on the sidewalls. This faceting produced extremely smooth surfaces with root-meansquare roughness (R q ) as low as 0.20 nm which is comparable to typical epitaxy-ready surfaces and smaller than the a-plane lattice spacing of 0.3186 nm. The smooth surfaces produced in this study enable possibilities for laser facets or for new device structures that require high quality surfaces for GaN regrowth.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Efficiency cliff in scaling InGaN light-emitting diodes down to submicron

The top-down submicron fabrication of blue-emitting light-emitting diodes on Qromis Substrate Technology substrates is reported. Light-emitting diodes with mesa sizes as small as 250 × 250 nm 2 show ideal forward voltage and low leakage current density. It is observed that sidewall treatment and passivation methods used in micro-light-emitting diodes (2–20 μ m) do not lead to the same level of sidewall recombination suppression for submicron ones (< 1 μ m), as evidenced by a ∼70% decrease in peak external quantum efficiencies when mesa sizes are scaled from 2 μ m down to 250 nm. This is attributed to the lateral carrier diffusion being comparable to the mesa size, regardless of the sidewall passivation and recovery. The results call for rethinking the impact of sidewalls in emerging top-down fabricated (sub)micrometer-light-emitting diodes.

42 ENGINEERING↗