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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS2017

Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios

The paper presents the architecture of a wideband reconfigurable harmonically-tuned Gallium Nitrate (GaN) Solid State Power Amplifier (SSPA) for cognitive radios. When interfaced with the physical layer of a cognitive communication system, this amplifier topology offers broadband high efficiency through the use of multiple tuned input/output matching networks. This feature enables the cognitive radio to reconfigure the operating frequency without sacrificing efficiency. This paper additionally presents as a proof-of-concept the design, fabrication, and test results for a GaN inverse class-F type amplifier operating at X-band (8.4 GHz) that achieves a maximum output power of 5.14-W, Power Added Efficiency (PAE) of 38.6, and Drain Efficiency (DE) of 48.9 under continuous wave (CW) operation.

Cognitive↗
NASA NTRS2020

A GaN-based Four-Switch Buck-Boost Converter using Ripple Correlation Control for Maximum Power Point Tracking in Dynamic Deep Space Environments

As the demand for high-performance power conversion in spacecraft continues to grow and spacecraft mass and volume budgets become increasingly tight, it is essential to design DC-DC converters with higher efficiency and power density. Although photovoltaic (PV) efficiency has increased over time, solar irradiance and temperatures can fluctuate dramatically in deep space. This causes significant variations in the maximum power point (MPP) of the PV array, which can decrease the overall system efficiency unless accounted for. Thus, it is imperative to track the MPP of the PV panels to maintain optimal efficiency. This paper presents the experimental development of a four-switch, GaN-based buck-boost converter with an implementation of the Ripple Correlation Control (RCC) MPPT algorithm for dynamic deep space environments. Due to the use of GaN HEMTs, the experimental system achieves better efficiency and power density compared to the previous state of the art implementations. A simulation of the prototype buck-boost converter was implemented in SaberRD (Synopsis), and a digital design of the RCC-based MPPT controller utilizing the StateAMS tool is presented. The simulation results show that this controller swiftly and precisely converged to the MPP of the source PV panels in a dynamic solar irradiance condition.

Mahmud, Sadab↗
DOE OSTI2022

GANISP: A GAN-Assisted Importance Splitting Probability Estimator

Designing manufacturing processes with high yield and strong reliability relies on effective methods for rare event estimation. Genealogical importance splitting reduces the variance of rare event probability estimators by iteratively selecting and replicating realizations that are headed towards a rare event. The replication step is difficult when applied to deterministic systems where the initial conditions of the offspring realizations need to be modified. Typically, a random perturbation is applied to the offspring to differentiate their trajectory from the parent realization. However, this random perturbation strategy may be effective for some systems while failing for others, preventing variance reduction in the probability estimate. This work seeks to address this limitation using a generative model such as a Generative Adversarial Network (GAN) to generate perturbations that are consistent with the attractor of the dynamical system. The proposed GAN-assisted Importance SPlitting method (GANISP) improves the variance reduction for the system targeted. An implementation of the method is available in a companion repository (https://github.com/NREL/GANISP).

generative adversarial network↗
DOE OSTI2022

GANISP: A GAN-Assisted Importance Splitting Probability Estimator: Preprint

To reduce the variance of rare event probability estimator, genealogical importance splitting marches towards a rare event by iteratively selecting and replicating realizations that are headed towards a rare event. The replication step is made difficult when applied to deterministic systems as the initial conditions of the offspring realizations need to be modified. Typically, a random perturbation is applied to the offspring to differentiate their trajectory from the parent realization. It is shown that a random perturbation strategy may be effective for some systems but may also fail for others, thereby preventing variance reduction in the probability estimate. To address this limitation, it is proposed to use a generative model such as a Generative Adversarial Network (GAN) to generate perturbations that are consistent with the attractor of the dynamical system. The GAN-assisted Importance SPlitting method (GANISP) improves the variance reduction for the system targeted. An implementation of the method is available in a companion repository (https://github.com/NREL/GANISP).

generative adversarial network↗
DOE OSTI2026

Propulsion System Design using a Dual 3-Phase PM Synchronous Reluctance Machine with X-Type Multi-Level GaN Inverter

— A propulsion system design is exhibited here that comprises of an X-type GaN power module based dual multi-level inverter and a PM Synchronous Reluctance motor. With the critical benefits of multi-level operation, namely low common mode EMI noise, low switching loss, low current Total Harmonic Distortion (THD), smoother torque and lower iron loss, this topology targets high system-level efficiency and high power density while using reduced rare earth (RE) elements in its motor. General Motors and Purdue University jointly designed and developed this 800V class, highly scalable traction drive that can deliver 200+ kW of power suitable for C-SUV to truck vehicle class. The 3-phase electric machine design utilizes dual winding with 6 terminals to work in line with the GaN X-type inverter, and results in a tractive solution that ensures higher machine efficiency while reducing cost and uncertainty related to use and availability of heavy rare earth/rare earth elements in its rotor.

MOMEN, FAIZUL [General Motors LLC, Detroit, MI (Un↗
DOE OSTI2023

A riming‐dependent parameterization of scattering by snowflakes using the self‐similar Rayleigh–Gans approximation

Abstract Riming is a key process of precipitation formation in ice‐containing clouds, but quantifying riming from observations is challenging, limiting our ability to evaluate the riming process in numerical weather models. One challenge for radar observations is that riming changes both the physical properties (mass, area cross‐section) and scattering properties of ice particles. These changes need to be implemented consistently as a function of riming in radar forward operators, which are required for retrievals and model evaluation in observation space. In this study, mass–size, cross‐section area–size, and backscattering cross‐section relations are developed as a function of the normalized rime mass for aggregates composed of various monomer types (columns, dendrites, needles, plates, and rosettes). The proposed framework allows us to simulate scattering properties of aggregated ice particles consistently as a function of riming in retrievals and radar forward operators. The parameterizations are developed from a large data set of simulated rimed aggregates of different sizes and monomer crystal types. The backscattering cross‐section parameterization (the “riming‐dependent parameterization”) is evaluated for radar frequencies of 35.6 and 94.0 GHz and is based on the Self‐Similar Rayleigh–Gans approximation (SSRGA), which is increasingly used to calculate microwave scattering of ice crystals and snowflakes. Compared with parameterizations from the literature that do not consider riming, the riming‐dependent parameterization leads to significantly smaller biases in terms of backscattering cross‐section. When using the particle masses and scattering properties of the individual particles simulated by the aggregation and riming model as a reference, the bias of our parameterization is below 1 dB when integrating over an exponential particle size distribution with sizes from 0.1–10 mm.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2022

Tri-level hybrid interval-stochastic optimal scheduling for flexible residential loads under GAN-assisted multiple uncertainties

Various building loads, such as heating, ventilation, and air conditioners (HVACs), electric water heaters (EWHs), and electric vehicles (EVs), can introduce opportunities for improving the flexibility of electricity consumption while satisfying the needs of building owners as well as benefiting the resilience of distribution system. To utilize such flexibility, a tri-level distribution market framework is established, including residential consumers, load aggregators (LAs), and the distribution system operator (DSO). In this work, the uncertainties from all three levels are considered. The random consumption behavior at the consumer level is modeled as a Gaussian noise that is also aggregated and transmitted to the LA level. The weather temperature in the LA level is forecasted as an interval, and the photovoltaic (PV) power in the market-clearing level is modeled by a set of power scenarios generated by Generative Adversarial Networks (GANs). Then, a hybrid interval-stochastic programming is proposed to transform the uncertain problems in the first two levels into deterministic ones. For real-time implementations, a rolling horizon optimization (RHO) scheme is employed to continuously optimize the power consumption based on the latest operating information. Finally, case studies on a modified IEEE 69-bus system validate the effectiveness of the proposed uncertainty modeling strategies and the RHO scheme.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2020

Defect suppression in wet-treated etched-and-regrown nonpolar m-plane GaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

In this work, steady-state photocapacitance (SSPC) was conducted on nonpolar m-plane GaN n-type Schottky diodes to evaluate the defects induced by inductively coupled plasma (ICP) dry etching in etched-and-regrown unipolar structures. An ~10× increase in the near-midgap Ec – 1.9 eV level compared to an as-grown material was observed. Defect levels associated with regrowth without an etch were also investigated. The defects in the regrown structure (without an etch) are highly spatially localized to the regrowth interface. Subsequently, by depth profiling an etched-and-regrown sample, we show that the intensities of the defect-related SSPC features associated with dry etching depend strongly on the depth away from the regrowth interface, which is also reported previously. A photoelectrochemical etching (PEC) method and a wet AZ400K treatment are also introduced to reduce the etch-induced deep levels. A significant reduction in the density of deep levels is observed in the sample that was treated with PEC etching after dry etching and prior to regrowth. An ~2× reduction in the density of Ec – 1.9 eV level compared to a reference etched-and-regrown structure was observed upon the application of PEC etching treatment prior to the regrowth. The PEC etching method is promising for reducing defects in selective-area doping for vertical power switching structures with complex geometries.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Impact of high-dose gamma-ray irradiation on electrical characteristics of N-polar and Ga-polar GaN p–n diodes

We investigate the impact of high-dose gamma-ray irradiation on the electrical performance of Ga-polar and N-polar GaN-based p-n diodes grown by metalorganic chemical vapor deposition. We compare the current density-voltage (J-V), capacitance-voltage (C-V), and circular transfer length method (CTLM) characteristics of the p-n diodes fabricated on Ga-polar and N-polar orientations before and after irradiation. The relative turn-on voltage increases for the Ga-polar diodes with increasing irradiation dose, while it increases initially and then starts to decrease for the N-polar diodes. The p-contact total resistance increases for Ga-polar and decreases for N-polar samples, which we attribute to the formation of point defects and additional Mg activation after irradiation. The J-V characteristics of most of the tested diodes recovered over time, suggesting the changes in the J-V characteristics are temporary and potentially due to metastable occupancy of traps after irradiation. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) measurements reveal the existence of different types of initial defects and surface electronic states on Ga-polar and N-polar samples. Gallium vacancies (V Ga ) are dominant defects in Ga-polar samples, while nitrogen vacancies (V N ) are dominant in N-polar samples. The presence of a higher concentration of surface states on Ga-polar surfaces compared to N-polar was confirmed by calculating the band bending and the corresponding screening effect due to opposite polarization bound charge and ionized acceptors at the surface. The difference in surface stoichiometry in these two orientations is responsible for the different behavior in electrical characteristics after gamma-ray interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Effect of Illumination Area on the Ultrafast Temporal Response of MSM GaN Photodiodes

We investigate the influence of spatial illumination profiles on the temporal response of metal–semiconductor–metal GaN photodiodes. Using both simulation and experimental measurements, we compare the response curves under two scenarios: illumination confined to the active area between electrodes and extended illumination beyond the contacts. The results show that limiting the beam illumination to the active region significantly sharpens the response, reducing the long decay tails associated with slow carrier drift from peripheral regions. As a result, the experimental data closely match simulation predictions, confirming that illumination geometry plays a critical role in optimizing photodiode performance for ultrafast detection applications.

Carrier drift time↗
DOE OSTI2024

Switching Modes for Reduction of Peak Voltage Transients in GaN-Based Three Level ANPC Inverter

The switching pole voltage can transition between P,0, and N states in a three-level active neutral point clamped (ANPC) inverter. State transitions between 0-P and 0-N can be realized with different switching modes. Three switching modes- Short 1 , Short 2 , and Full are studied considering the effect of capacitive current paths. The role of clamping and inner switch on/off conditions is determined using simplified equivalent circuit models. Short 2 with clamping switch off is beneficial for turn-on overvoltage suppression but results in high turn-off overvoltage. Full mode with a parallel current sharing path is effective for turn-off overvoltage suppression but leads to high turn-on overvoltage. Hence, a Modified Full mode is proposed to achieve the simultaneous objective of overvoltage suppression at both turn-on and turn-off transient during high load currents. This benefits 3L ANPC operation at a low power factor with a high load current at fundamental voltage zero crossing points. Here, a 650V GaN-based three-level ANPC inverter prototype is designed and used to evaluate the switching modes and overvoltage suppression strategies through double pulse tests and continuous operation.

42 ENGINEERING↗
DOE OSTI2023

Bayesian GAN-Based False Data Injection Attack Detection in Active Distribution Grids With DERs

Advancements in information and communication technologies have revolutionized monitoring and control capabilities within smart grids. However, it also brings new vulnerabilities to data acquisition systems and state estimation functions, which attackers can subtly tamper with the measurement data through compromising the communication network. Moreover, the high penetration of renewable energy sources with the inherited characteristics of uncertainty and variability further complicates the design of effective intrusion detection systems. In this paper, a Bayesian deep learning-based approach is developed to detect cyber attacks and maintain the security of smart grids. Our method specifically addresses the prevalent issue of imbalanced data in real power systems, which arises from the predominance of normal system operations over compromised or attacked states. Employing a novel Bayesian GAN-based technique, our approach successfully discriminates between secure and compromised measurement data, even in scenarios with significant data imbalance. Furthermore, the proposed method accommodates various practical application factors, ensuring accurate intrusion detection despite the presence of measurement noise. The feasibility and effectiveness of the proposed detection mechanism are validated by testing on IEEE 13-node and 123-node test systems. Simulation results and comparisons with literature methods demonstrate the superiority of proposed cybersecurity solutions.

Bayesian GAN↗
DOE OSTI2020

Materials Data on GaN by Materials Project

GaN is Halite, Rock Salt structured and crystallizes in the cubic Fm-3m space group. The structure is three-dimensional. Ga3+ is bonded to six equivalent N3- atoms to form a mixture of edge and corner-sharing GaN6 octahedra. The corner-sharing octahedral tilt angles are 0°. All Ga–N bond lengths are 2.14 Å. N3- is bonded to six equivalent Ga3+ atoms to form a mixture of edge and corner-sharing NGa6 octahedra. The corner-sharing octahedral tilt angles are 0°.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on GaN by Materials Project

GaN is Wurtzite structured and crystallizes in the hexagonal P6_3mc space group. The structure is three-dimensional. Ga3+ is bonded to four equivalent N3- atoms to form corner-sharing GaN4 tetrahedra. All Ga–N bond lengths are 1.97 Å. N3- is bonded to four equivalent Ga3+ atoms to form corner-sharing NGa4 tetrahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on GaN by Materials Project

GaN is Zincblende, Sphalerite structured and crystallizes in the cubic F-43m space group. The structure is three-dimensional. Ga3+ is bonded to four equivalent N3- atoms to form corner-sharing GaN4 tetrahedra. All Ga–N bond lengths are 1.97 Å. N3- is bonded to four equivalent Ga3+ atoms to form corner-sharing NGa4 tetrahedra.

36 MATERIALS SCIENCE↗
NASA NTRS2005

Development of GaN-based microchemical sensor nodes

Sensors based III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

extreme environment↗
NASA NTRS2005

Development of GaN-based micro chemical sensor nodes

Sensors based on III-N technology are gaining significant interest due to their potential for monolithic integration of RF transceivers and light sources and the capability of high temperature operations. We are developing a GaN-based micro chemical sensor node for remote detection of chemical toxins, and present electrical responses of AlGaN/GaN HEMT (High Electron Mobility Transistor) sensors to chemical toxins as well as other common gases.

chemical↗