SEARCH · Engineering Papers

Results for “FILM”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 217 records · Page 12

All sources NASA NTRS DOE OSTI

NASA NTRS1980

Lubrication and wear mechanisms of polyimide-bonded graphite fluoride films subjected to low contact stress

The tribological properties of polyimide-bonded graphite fluoride films were studied with a pin-on-disk friction apparatus. A 440 C HT stainless steel rider with a 0.95 millimeter diameter flat area was slid against the film in order to achieve a light, closely controlled contact stress. A 1 kilogram load was applied to this flat to give a projected contact stress of 14 megapascals. Two stages of lubrication were operating. In the first stage, the film supported the load and the lubricating mechanism appeared to be the shear of a thin surface layer of the film between the rider and the bulk of the film. The second stage began after the original film was worn away, and the lubricating mechanism appeared to be the shear of very thin lubricant layers between the flat area on the rider and flat plateaus generated on the sandblasted asperities of the metallic substrate. The major difference between the lubricating mechanisms of the hemispherical and flat riders was that the flat wore through the film much more slowly than did the hemisphere.

Fusaro, R. L.↗

NASA NTRS1980

Mechanisms of lubrication and wear of a bonded solid-lubricant film

The tribological properties of polyimide-bonded graphite fluoride films were investigated. A pin-on-disk type of testing apparatus was used; in addition to sliding a hemispherically tipped rider, a rider with a 0.95-mm-diameter flat area was slid against the film so that a lower, less variable contact stress could be achieved. Two stages of lubrication occurred: in the first, the film supported the load and the lubricating mechanism consisted of the shear of a thin surface layer between the rider and the bulk of the film. The second occurred after the bonded film had worn to the substrate, and consisted of the shear of very thin lubricant films between the rider and flat plateaus generated on the metallic substrate asperities. The film wear mechanism was strongly dependent on contact stress.

Fusaro, R. L.↗

NASA NTRS1981

Ion beam deposited protective films

Single or dual ion beam sources were used to deposit thin films for different applications. Metal and metal oxide films were evaluated as protective coatings for the materials. Film adherence was measured and the most promising films were then tested under environments similar to operating conditions. It was shown that some materials do protect die material (H-13 steel) and do reduce thermal fatigue. Diamondlike films have many useful applications. A series of experiments were conducted to define and optimize new approaches to the manufacture of such films. A dual beam system using argon and methane gases was developed to generate these films.

Mirtich, M. J.↗

NASA NTRS1982

Ion beam sputter deposited diamond like films

A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

Banks, B. A.↗

NASA NTRS1982

Microhardness studies on thin carbon films grown on P-type, (100) silicon

A program to grow thin carbon films and investigate their physical and electrical properties is described. Characteristics of films grown by rf sputtering and vacuum arc deposition on p type, (100) silicon wafers are presented. Microhardness data were obtained from both the films and the silicon via the Vickers diamond indentation technique. These data show that the films are always harder than the silicon, even when the films are thin (of the order of 1000 A). Vacuum arc films were found to contain black carbon inclusions of the order of a few microns in size, and clusters of inclusions of the order of tens of microns. Transmission electron diffraction showed that the films being studied were amorphous in structure.

Kolecki, J. C.↗

NASA NTRS1985

The structure of ion plated films in relation to coating properties

Ion plating is an ion assisted or glow discharge deposition technique, where ions or energetic atoms transfer energy, momentum and charge to the substrate and the growing film in a manner which can be controlled to favorably modify surface, subsurface chemistry, and microstructure. The glow discharge energizing effects from the initial nucleation stages to the final film growth are discussed. As a result, adherence, coherence, internal stresses, density and morphology of the coatings are significantly improved, over the conventional (nonion-assisted) techniques which in turn favorably affect the surface initiated failures caused by friction, wear, erosion, corrosion and fatigue. Ion plated films because of their graded coating/substrate interface, fine, uniform, densely packed film structure also induce a surface strengthening effect which improved the mechanical properties such as yield, tensile strength and fatigue life. Since a uniform, continuous film can be obtained at lower nominal film thickness, this effect is of great importance in solid film lubrication and in corrosion protection.

Spalvins, T.↗

NASA NTRS1986

Depositing Diamondlike Carbon Films

New process demonstrated to make thin films (usually thousands of angstroms to few microns thick) that have properties of diamonds. Various plasma and ion-beam techniques employed to generate films. Films made by radio-frequency plasma decomposition of hydrocarbon gas or other alkanes, by low-energy carbon-ion-beam deposition, or by ion plating and dual ion technique using carbon target. Advantages of new process over others are films produced, though amorphous, are clear, extremely hard, chemically inert, of high resistivity, and have index of refraction of 3.2 properties similar to those of single-crystal diamonds. Films have possible uses in microelectronic applications, high-energy-laser and plastic windows, corrosion protection for metals, and other applications where desired properties of film shaped during the film-formation process.

Mirtich, M. J.↗

NASA NTRS1985

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗

NASA NTRS1986

Effect of counterions on the formation of ohmic contact between p-Si and poly(pyrrole) film - An ac impedance analysis

Conditions under which poly(pyrrole) (PP) films form ohmic contact with single-crystal p-Si are described. Counterions affect both the conductivity and flatband potential, V(FB), values of poly(pyrrole). While paratoluene-sulfonate-doped PP acts like a switch, the impedance behavior of PP films doped with ClO4(-), BF4(-), or PF6(-) allows evaluation of the V(FB) of these films. The formation of 'quasi-ohmic' and 'nonohmic' contacts, respectively, of PP (ClO4) and PP films doped with other counterions, with p-Si, are explained in terms of conductivity of these films and V(FB) of PP films with respect to that of p-Si. PP film seems to passivate or block intrinsic surface states present on p-Si surface.

Nagsubramanian, G.↗

NASA NTRS1986

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗

NASA NTRS1987

AC impedance analysis of polypyrrole thin films

The AC impedance spectra of thin polypyrrole films were obtained at open circuit potentials from -0.4 to 0.4 V vs SCE. Two limiting cases are discussed for which simplified equivalent circuits are applicable. At very positive potentials, the predominantly nonfaradaic AC impedance of polypyrrole is very similar to that observed previously for finite porous metallic films. Modeling of the data with the appropriate equivalent circuit permits effective pore diameter and pore number densities of the oxidized film to be estimated. At potentials from -0.4 to -0.3 V, the polypyrrole film is essentially nonelectronically conductive and diffusion of polymer oxidized sites with their associated counterions can be assumed to be linear from the film/substrate electrode interface. The equivalent circuit for the polypyrrole film at these potentials is that previously described for metal oxide, lithium intercalation thin films. Using this model, counterion diffusion coefficients are determined for both semi-infinite and finite diffusion domains. In addition, the limiting low frequency resistance and capacitance of the polypyrrole thin fims was determined and compared to that obtained previously for thicker films of the polymer. The origin of the observed potential dependence of these low frequency circuit components is discussed.

Penner, Reginald M.↗

NASA NTRS1988

A review of melt and vapor growth techniques for polydiacetylene thin films for nonlinear optical applications

Methods for the growth of polydiacetylene thin films by melt and vapor growth and their subsequent polymerization are summarized. Films with random orientations were obtained when glass or quartz were used as substrates in the vapor growth process. Oriented polydiacetylene films were fabricated by the vapor deposition of diacetylene monomer onto oriented polydiacetylene on a glass substrate and its subsequent polymerization by UV light. A method for the growth of oriented thin films by a melt-shear growth process as well as a method of film growth by seeded recrstallization from the melt between glass plates, that may be applied to the growth of polydiacetylene films, are described. Moreover, a method is presented for the fabrication of single crystal thin films of polyacetylenes by irradiation of the surface of diacetylene single crystals to a depth between 100 and 2000 angstroms.

Penn, B. G.↗

NASA NTRS1988

High Tc screen-printed YBa2Cu3O(7-x) films - Effect of the substrate material

Thick films of YBa2Cu3O(7-x) have been deposited on highly polished alumina, magnesia spinel, nickel aluminum titanate (Ni-Al-Ti), and barium tetratitanate (Ba-Ti) substrates by the screen printing technique. Properties of the films were found to be highly sensitive to the choice of the substrate material. The film on Ba-Ti turned green after firing, due to a reaction with the substrate and were insulating. A film on Ni-Al-Ti had a Tc (onset) of about 95 K and lost 90 percent of its resistance by about 75 K. However, even at 4 K it was not fully superconducting, possibly due to a reaction between the film and the substrate and interdiffusion of the reaction products. The film on alumina had Tc (onset) of about 96 K, Tc (zero) of about 66 K, and Delta Tc of about 10 K. The best film was obtained on spinel and had Tc (onset) of about 94 K, zero resistance at 81 K, and a transition width of about 7 K.

Bansal, Narottam P.↗

NASA NTRS1988

Sequentially evaporated thin Y-Ba-Cu-O superconductor films: Composition and processing effects

Thin films of YBa2Cu3O(7-beta) have been grown by sequential evaporation of Cu, Y, and BaF2 on SrTiO3 and MgO substrates. The onset temperatures were as high as 93 K while T sub c was 85 K. The Ba/Y ratio was varied from 1.9 to 4.0. The Cu/Y ratio was varied from 2.8 to 3.4. The films were then annealed at various times and temperatures. The times ranged from 15 min to 3 hr, while the annealing temperatures used ranged from 850 C to 900 C. A good correlation was found between transition temperature (T sub c) and the annealing conditions; the films annealed at 900 C on SrTiO3 had the best T sub c's. There was a weaker correlation between composition and T sub c. Barium poor films exhibitied semiconducting normal state resistance behavior while barium rich films were metallic. The films were analyzed by resistance versus temperature measurements and scanning electron microscopy. The analysis of the films and the correlations are reported.

Valco, George J.↗

NASA NTRS1988

Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

The adhesion, friction, and wear behavior of silicon nitride films deposited by low- and high-frequency plasmas (30 kHz and 13.56 MHz) at various temperatures to 700 C in vacuum were examined. The results of the investigation indicated that the Si/N ratios were much greater for the films deposited at 13.56 MHz than for those deposited at 30 kHz. Amorphous silicon was present in both low- and high-frequency plasma-deposited silicon nitride films. However, more amorphous silicon occurred in the films deposited at 13.56 MHz than in those deposited at 30 kHz. Temperature significantly influenced adhesion, friction, and wear of the silicon nitride films. Wear occurred in the contact area at high temperature. The wear correlated with the increase in adhesion and friction for the low- and high-frequency plasma-deposited films above 600 and 500 C, respectively. The low- and high-frequency plasma-deposited thin silicon nitride films exhibited a capability for lubrication (low adhesion and friction) in vacuum at temperatures to 500 and 400 C, respectively.

Miyoshi, K.↗

NASA NTRS1989

Adhesion, friction, and wear of plasma-deposited thin silicon nitride films at temperatures to 700 C

Miyoshi, K.↗

NASA NTRS1989

Growth and patterning of laser ablated superconducting YBa2Cu3O7 films on LaAlO3 substrates

A high quality superconducting film on a substrate with a low dielectric constant is desired for passive microwave circuit applications. In addition, it is essential that the patterning process does not effect the superconducting properties of the thin films to achieve the highest circuit operating temperatures. YBa2Cu3O7 superconducting films were grown on lanthanum aluminate substrates using laser ablation with resulting maximum transition temperature (T sub c) of 90 K. The films were grown on a LaAlO3 which was at 775 C and in 170 mtorr of oxygen and slowly cooled to room temperature in 1 atm of oxygen. These films were then processed using photolithography and a negative photoresist with an etch solution of bromine and ethanol. Results are presented on the effect of the processing on T(sub c) of the film and the microwave properties of the patterned films.

Warner, J. D.↗

NASA NTRS1989

Toughness distribution considerations in a thin film system

The spontaneous mechanical failure of thin films and occasionally substrates, due to the thin film deposition, are relatively common occurrences. Large internal stresses (e.g. 10 MPa to 100 MPa) are an inherent part of the thin film deposition process. In most cases where fracture mechanics has been applied to thin film systems, the failure path is confined a priori to the substrate-thin film interface or in the thin film perpendicular to that interface. This paper considers the contributions which determine the failure path and presents a qualitative model for identifying the failure path in a thin film system taking into account the presence of residual stresses. The most important aspect of this model is that it offers an explanation of the variation in the locus of failure that does not strictly depend on the weakest point of the material (i.e. the least work of fracture) being the first to fail. It does not, inherent to its construction, restrict failure to the interface a priori. The fracture mechanics criterion of the strain energy release rate equaling the material's resistance to crack growth leads to crack propagation at a specific location and defines the selection of the fracture path.

Brown, L. D.↗