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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Use of relativistic rise in ionization chambers for measurement of high energy heavy nuclei

A balloon-borne instrument has been constructed to measure the energy spectra of cosmic-ray heavy nuclei in the range of about 0.3 to about 100 GeV/amu. It makes use of the relativistic rise portion of the Bethe-Bloch curve in ionization chambers for energy determination in the 10- to 100-GeV/amu interval. The instrument consists of six layers of dual-gap ionization chambers for energy determination above 10 GeV/amu. Charge is determined with a NE114 scintillator and a Pilot 425 plastic Cerenkov counter. A CO2 gas Cerenkov detector (1 atm; threshold of 30 GeV/amu) calibrates the ion chambers in the relativistic rise region. The main emphasis of the instrument is the determination of the change of the ratio of Iron (26) to the Iron secondaries (21-25) in the energy range of 10 to 100 GeV/amu. Preliminary data from a balloon flight in the fall of 1982 from Palestine, TX is presented.

Barthelmy, S. D.↗
NASA NTRS1986

Evaluation of Stirling engine appendix gap losses

The efficiency of a Stirling engine can be strongly influenced by the heat transfer losses associated with its appendix gap region. The cyclic energy flows in this region are related to the temperature gradient along the piston and cylinder partition walls, the reciprocating motion of the piston, the pressure variation in the Stirling cycle and the leakage flow across the cold-end seal. This paper outlines a numerical model to simulate these cyclic energy flows and the subsequent effort to correlate it with engine test data. The sensitivity of the appendix gap loss to selected parameters and comparisons with test results are presented.

Huang, S. C.↗
NASA NTRS2006

X-Ray Detector Research at MSFC for Space Applications

NASA's Vision for Space Exploration has specific goals aimed at exploring the Solar System. This vision, under presidential mandate includes landing humans on the moon before the end of the next decade, paving the way for eventual journeys to Mars and beyond. The first missions to the moon will be in the form of both Orbiters and Landers, with the goal of paving the way for human return. One of the instruments we are currently working on,in collaboration with Brookhaven National Laboratory, is a lunar orbiter fluorescent x-ray spectrometer to finely map the light elements (down to Carbon) on surface of the moon. Funded NASA s Planetary Instrument Definition and Development Program the instrument is based on silicon drift detector arrays read out by custom ASICs. These offer the promise of high spectral resolution, necessary for resolving weak lines against a strong background continuum, and very low power requirements, necessary for large areas (greater than 500 square centimeters) required for future lunar missions. Further, the inherent radiation hardness of these detectors makes them ideal candidates for exploring the Jovian system, where the harsh radiation environment from Jupiter s radiation belts creates unfavorable detector conditions. Looking beyond our solar system, in the hard x-ray regime (20-80keV.), we are studying Cadmium-Zinc-Telluride pixilated detectors as feasible candidates for focal plane detectors of a hard x-ray telescope. This energy region bridges the gap between thermal and non-thermal x-ray emission from astronomical sources, will allow us to better understand supernovae nucleosynthesis (such as through the Ti-44 lines at 68keV and 78keV), Active Galactic Nuclei and other compact objects, more completely. The detectors that we are characterizing are 2mm in thickness and are pixilated with a 16x16 array of 300 micrometer pitch pixels (50micometer gap). These detectors are designed at Rutherford Appleton Laboratory, material is from eV Products, and polymer flip-chip assembly was performed by a commercial vendor. An energy resolution of 2.0% at 60keV (or better) should allow us to sufficiently distinguish lines of interest from background continuum, and the detector spatial resolution should be fine enough to over-sample the focal spot from the x-ray focusing optics by about a factor of two. Full technical details of these developments will be presented.

Gaskin, Jessica↗
NASA NTRS1920

Heat energy of various ignition sparks

This report describes a method developed at the Bureau of Standards for measuring the total energy liberated as heat in a spark gap by an ignition system. Since this heat energy is obtained from the electromagnetic energy stored in the windings of the magneto or coil, it is a measure of the effectiveness of the device as an electric generator. Part 2 gives the results of measurements in absolute units of the total heat supplied to a spark gap by ignition systems of different types operating at various speeds, under conditions substantially equivalent to those in the cylinder of a high-compression aviation engine.

Silsbee, F B↗
NASA NTRS1975

Deep trap, laser activated image converting system

Receiving an optical image on the surface of a photoconducting semiconductor is presented, storing the image in deep traps of the semiconductor, and later scanning the semiconductor with a laser beam to empty the deep traps, thereby producing a video signal. The semiconductor is illuminated with photons of energy greater than the band gap producing electron-hole pairs in the semiconductor which subsequently fill traps in energy from the band edges. When the laser beam of low energy photons excites the trapped electrons and holes out of the traps into the conduction and valence bands, a photoconductivity can be observed.

Maserjian, J.↗
NASA NTRS1993

Electronic characterization of defects in narrow gap semiconductors

The study of point defects in semiconductors has a long and honorable history. In particular, the detailed understanding of shallow defects in common semiconductors traces back to the classic work of Kohn and Luttinger. However, the study of defects in narrow gap semiconductors represents a much less clear story. Here, both shallow defects (caused by long range potentials) and deep defects (from short range potentials) are far from being completely understood. In this study, all results are calculational and our focus is on the chemical trend of deep levels in narrow gap semiconductors. We study substitutional (including antisite), interstitial and ideal vacancy defects. For substitutional and interstitial impurities, the efects of relaxation are included. For materials like Hg(1-x)Cd(x)Te, we study how the deep levels vary with x, of particular interest is what substitutional and interstitial atoms yield energy levels in the gap i.e. actually produce deep ionized levels. Also, since the main technique utilized is Green's functions, we include some summary of that method.

Patterson, James D.↗
NASA NTRS2004

Multi-Element Electron-Transfer Optical Detector System

A multi-element optical detector system includes an electrically resistive screen that is substantially transparent to radiation energy having a wavelength of interest. A plurality of electron transfer elements (e.g., a low work function photoactive material or a carbon nanotube (CNT)-based element) are provided with each having a first end and a second end. The first end of each element is spaced apart from the screen by an evacuated gap. When the radiation energy passes through the screen with a bias voltage applied thereto, transfer of electrons through each element is induced from the first end to the second end such that a quantity indicative of the electrons transferred through each element can be detected.

Jeffrey D Jordan↗
NASA NTRS1991

Procedures for Including Secondary Electron Emission in Numerical Simulations of Plasma-Insulator Interactions

Previous Monte Carlo simulations provide a data base for properties of secondary electron emission (SEE) from insulators and metals. Incident primary electrons are considered at energies up to 1200 eV. The behavior of secondary electrons is characterized by (1) yield vs. primary energy E(sub p), (2) distribution vs. secondary energy E(sub s), and (3) distribution vs. angle of emission theta. Special attention is paid to the low energy range E(sub p) up to 50 eV, where the number and energy of secondary electrons is limited by the finite band gap of the insulator. For primary energies above 50 eV the SEE yield curve can be conveniently parameterized by a Haffner formula. The energy distribution of secondary electrons is described by an empirical formula with average energy about 8.0 eV. The angular distribution of secondaries is slightly more peaked in the forward direction than the customary cos theta distribution. Empirical formulas and parameters are given for all yield and distribution curves. Procedures and algorithms are described for using these results to find the SEE yield, and then to choose the energy and angle of emergence of each secondary electron. These procedures can readily be incorporated into numerical simulations of plasma-solid surface interactions in low earth orbit.

Beyst, Brian↗
NASA NTRS2000

Gamma-ray Pulsars: Models and Predictions

Pulsed emission from gamma-ray pulsars originates inside the magnetosphere, from radiation by charged particles accelerated near the magnetic poles or in the outer gaps. In polar cap models, the high energy spectrum is cut off by magnetic pair production above an energy that is, dependent on the local magnetic field strength. While most young pulsars with surface fields in the range B = 10(exp 12) - 10(exp 13) G are expected to have high energy cutoffs around several GeV, the gamma-ray spectra of old pulsars having lower surface fields may extend to 50 GeV. Although the gamma-ray emission of older pulsars is weaker, detecting pulsed emission at high energies from nearby sources would be an important confirmation of polar cap models. Outer gap models predict more gradual high-energy turnovers of the primary curvature emission around 10 GeV, but also predict an inverse Compton component extending to TeV energies. Detection of pulsed TeV emission, which would not survive attenuation at the polar caps, is thus an important test of outer gap models. Next-generation gamma-ray telescopes sensitive to GeV-TeV emission will provide critical tests of pulsar acceleration and emission mechanisms.

Harding Alice K.↗
NASA NTRSDate not supplied

NASA HECC Geometry and Performance Review Part 3: A Numerical and Experimental Investigation of Tip Clearance Effects on the Vaneless Diffuser Configuration

Tip clearance effects in centrifugal compressors have been extensively investigated to understand the losses associated with the flow in the impeller tip clearance gap between the rotating blades and the stationary shroud. In Part 3 of this multipart investigation, experimental data and validated numerical simulations from Parts 1 and 2 were used to analyze the effects of the size of the tip clearance gap on the High Efficiency Centrifugal Compressor performance and aerodynamics. Four tip clearance gaps ranging from 0.012-in to 0.030-in (2.0% to 4.9% of the impeller exit blade height) were considered at both design and off-design operating conditions. The total pressure ratio and efficiency of the stage are found to decay linearly with increasing tip gaps. The sensitivity of the impeller performance to the tip gap was found to vary with the rotational speed of the compressor. Spanwise surveys of flow angle, total pressure, and total temperature collected at the impeller exit at design speed are used to validate numerical simulations at each experimental tip gap condition. Numerical simulations show that increased turbulence kinetic energy near the shroud at larger tip gaps leads to spanwise mixing of high entropy fluid near the impeller trailing edge which decreases the useful work input by the impeller. The data presented have been made available to the public in the HECC Data Archive located at https://storage.googleapis.com/hecc-data/NASA-HECC-Data-Archive.zip.

centrifugal compressor↗
NASA NTRSDate not supplied

NASA HECC Geometry and Performance Review Part 3: A Numerical and Experimental Investigation of Tip Clearance Effects on the Vaneless Diffuser Configuration

Tip clearance effects in centrifugal compressors have been extensively investigated to understand the losses associated with the flow in the impeller tip clearance gap between the rotating blades and the stationary shroud. In Part 3 of this multipart investigation, experimental data and validated numerical simulations from Parts 1 and 2 were used to analyze the effects of the size of the tip clearance gap on the High Efficiency Centrifugal Compressor performance and aerodynamics. Four tip clearance gaps ranging from 0.012-in to 0.030-in (2.0% to 4.9% of the impeller exit blade height) were considered at both design and off-design operating conditions. The total pressure ratio and efficiency of the stage are found to decay linearly with increasing tip gaps. The sensitivity of the impeller performance to the tip gap was found to vary with the rotational speed of the compressor. Spanwise surveys of flow angle, total pressure, and total temperature collected at the impeller exit at design speed are used to validate numerical simulations at each experimental tip gap condition. Numerical simulations show that increased turbulence kinetic energy near the shroud at larger tip gaps leads to spanwise mixing of high entropy fluid near the impeller trailing edge which decreases the useful work input by the impeller. The data presented have been made available to the public in the HECC Data Archive located at https://storage.googleapis.com/hecc-data/NASA-HECC-Data-Archive.zip.

centrifugal compressor↗
NASA NTRS1975

Energy and other non-renewable resources

Anticipated U.S. demands for non-renewable energy and mineral resources exceed domestic supplies essential for economic growth. For the long term changes necessary in the energy supply and demand gap, new technologies and substitute materials as well as legislation and socio-economic strategies are elaborated.

Source record↗
NASA NTRS1980

Improved characterization of the Si-SiO2 interface

Refined quasi-static and conductance methods, based on effectively thin composite insulating layers, low-carrier-concentration bulk semiconductors, and low-level illumination, have been applied to an improved characterization of the (100) Si-SiO2 interface. Accurate measurement of both the total density of interface states and its major components as a function of energy in the forbidden gap have been made over four decades (10-billion to 100-trillion states/eV sq cm) on a single sample. The normal U-shaped density of states is resolved into separate valence- and conduction-band-derived contributions as well as impurity-derived contributions corresponding to concentrations on the order of 20 ppm at the interface.

Su, P.↗
NASA NTRS1990

Field-Induced-Gap Infrared Detectors

Semimetals become semiconductors under applied magnetic fields. New detectors require less cooling equipment because they operate at temperatures higher than liquid-helium temperatures required by extrinsic-semiconductor detectors. Magnetic fields for detectors provided by electromagnets based on recently-discovered high-transition-temperature superconducting materials. Detector material has to be semiconductor, in which photon absorbed by exciting electron/hole pair across gap Eg of forbidden energies between valence and conduction energy bands. Magnetic- and compositional-tuning effects combined to obtain two-absorber detector having narrow passband. By variation of applied magnetic field, passband swept through spectrum of interest.

Elliott, C. Thomas↗
NASA NTRS1988

Radiation resistance studies of amorphous silicon films

A study of hydrogenated amorphous silicon thin films irradiated with 2.00 MeV helium ions using fluences ranging from 1E11 to 1E15/sq cm is presented. The films were characterized using photothermal deflection spectroscopy, transmission and reflection spectroscopy, and photoconductivity and annealing measurements. Large changes were observed in the subband-gap optical absorption for energies between 0.9 and 1.7 eV. The steady-state photoconductivity showed decreases of almost five orders of magnitude for a fluence of 1E15/sq cm, but the slope of the intensity dependence of the photoconductivity remained almost constant for all fluences. Substantial annealing occurs even at room temperature, and for temperatures greater than 448 K the damage is completely annealed. The data are analyzed to describe the defects and the density of states function.

Payson, J. Scott↗
NASA NTRS2012

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Kim, Hyun-Jung↗
NASA NTRS1982

Diffraction studies of the high pressure phases of GaAs and GaP

High pressure structural phase transitions of GaAs and GaP have been studied by energy dispersive X-ray diffraction with the radiation from the Cornell High Energy Synchrotron Source. GaAs began to transform at 172 + or - 7 kbar to an orthorhombic structure possibly belonging to space group Fmmm. GaP transformed to a tetragonal beta-Sn type phase at 215 + or - 8 kbar. Although pressure transmitting media were used to minimize shear stresses in the specimens, the high pressure diffraction results were interpreted as showing evidence for planar defects in the specimens.

Baublitz, M., Jr.↗
NASA NTRS1991

Nonintrusive Measurement Of Temperature Of LED Junction

Temperature inferred from spectrum of emitted light. Method of determining temperature of junction based on two relevant characteristics of LED. Gap between valence and conduction electron-energy bands in LED material decreases with increasing temperature, causing wavelength of emitted photon to increase with temperature. Other, as temperature increases, non-radiative processes dissipate more of input electrical energy as heat and less as photons in band-gap wavelenth region; optical and quantum efficiencies decrease with increasing temperature. In principal, either characteristic alone used to determine temperature. However, desirable to use both to obtain indication of uncertainty.

Leidecker, Henning↗