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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

(Ir)Relevance of Disorder for Superconductivity in Cuprates

In cuprates that exhibit high-temperature superconductivity (HTS), as the doping level 𝑝 is increased beyond the optimal value, the superfluid density 𝑛 𝑠⁢0 decreases and eventually vanishes, closely tracking the critical temperature 𝑇 𝑐 . This has been interpreted using a dirty-𝑑-wave extension of the Bardeen-Cooper-Schrieffer theory, assuming that 𝑇 𝑐 and 𝑛 𝑠⁢0 decrease with increasing disorder and pair breaking. Here, to test this hypothesis, we tuned the doping level in overdoped La 2-x ⁢Sr x ⁢CuO 4−𝛿 films by electrolyte gating, measured several parameters used to quantify the level of disorder (the residual resistivity ratio RRR, the mean free path 𝑙 0 , and the electron mobility 𝜇), and studied how 𝑇 𝑐 and 𝑛 𝑠⁢0 scale with these. The experimentally measured dependence turned out to be the opposite of the expected—𝑇 𝑐 and 𝑛 𝑠⁢0 increased with increasing disorder. This brings the question of the true origin of the demise of 𝑇 𝑐 and 𝑛 𝑠⁢0 with overdoping back to the center stage of the quest to decipher the HTS enigma.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Performance of a Kinetic Inductance Traveling-Wave Parametric Amplifier at 4 Kelvin: Toward an Alternative to Semiconductor Amplifiers

Most microwave readout architectures in quantum computing or sensing rely on a semiconductor amplifier at 4 K, typically a high-electron mobility transistor (HEMT). Despite its remarkable noise performance, a conventional HEMT dissipates several milliwatts of power, posing a practical challenge to scale up the number of qubits or sensors addressed in these architectures. As an alternative, we present an amplification chain consisting of a kinetic inductance traveling-wave parametric amplifier (KITWPA) placed at 4 K, followed by a HEMT placed at 70 K, and demonstrate a chain-added noise $T_Σ$ = 6.3 ± 0.5 K between 3.5 and 5.5 GHz. While, in principle, any parametric amplifier can be quantum limited even at 4 K, in practice we find the performance of the KITWPA to be limited by the temperature of its inputs and by an excess of noise $T_{ex}$ = 1.9 K. In this work, the dissipation of the rf pump of the KITWPA constitutes the main power load at 4 K and is about 1% that of a HEMT. These combined noise and power dissipation values pave the way for the use of the KITWPA as a replacement for semiconductor amplifiers.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Properties of La 0.7 Ca 0.3 MnO 3 under extreme tensile strain

The complex phase diagram of manganites with simultaneously active spin, charge, orbital, and lattice degrees of freedom continues providing surprises. In a recent groundbreaking experiment, membranes of the perovskite manganite La 0.7 Ca 0.3 MnO 3 (LCMO) deposited on a flexible polymer layer were strained up to 8% [S. S. Hong et al., Science 368, 71 (2020)], much more than achieved by regular strain induced by a rigid substrate. By increasing this strain, a metal-insulator transition was reported. Here we reproduce the results of the experiments using Monte Carlo simulations of the two-orbital double-exchange model including Jahn-Teller distortions at hole density x=1/3. The full phase diagram with varying temperature and Jahn-Teller coupling λ is presented. When the bandwidth W of mobile electrons is reduced, thus when the effective Jahn-Teller coupling λ/W is increased, a metal-insulator transition is found in our simulations, between a ferromagnetic metallic state with uniform charge distribution and an insulator with diagonal charge stripes that retains its ferromagnetic character. In between the hole-rich diagonals, staggered orbital order occurs. We also report resistivity and magnetization measurements alongside with spin correlations and charge structure factors. Our overall conclusions are in agreement with the recent experimental and density functional theory results by Hong et al., and we confirm much earlier ground state predictions of striped ferromagnetic order using energy optimization techniques by T. Hotta et al. [Phys. Rev. Lett. 86, 4922 (2001)]. The experimental observation of one of the states predicted by theory suggests that diagonal stripes could be achieved at other hole densities as well, such as x=1/4, if LCMO membranes with that hole doping were subject to similar strains.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Streamer self-focusing in an external longitudinal magnetic field

The numerical simulation of the development of a streamer discharge in a gap with an external longitudinal magnetic field was used to demonstrate the self-focusing of such discharges. Self-focusing is caused by a sharp deceleration of the radial ionization wave due to a change in the electron energy distribution function, a decrease in the average electron energy, the rate of gas ionization, and the electron mobility in crossed electric and magnetic fields as compared to the case of the discharge development without a magnetic field. The self-focusing effect of a streamer discharge in an external longitudinal magnetic field is observed for both positive and negative pulse polarities. The work proposes an estimate of the critical value of the magnetic field, which makes it possible to control the development of pulsed high-voltage discharges at various gas pressures.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Challenges to magnetic doping of thin films of the Dirac semimetal Cd 3 As 2

Magnetic doping of topological quantum materials provides an attractive route for studying the effects of time-reversal symmetry breaking. Thus motivated, we explore the introduction of the transition metal Mn into thin films of the Dirac semimetal Cd 3 A s2 during growth by molecular beam epitaxy. Scanning transmission electron microscopy measurements show the formation of a Mn-rich phase at the top surface of Mn-doped Cd 3 A s2 thin films grown using both uniform doping and delta doping. This suggests that Mn acts as a surfactant during epitaxial growth of Cd 3 A s2 , resulting in phase separation. Magnetometry measurements of such samples indicate a ferromagnetic phase with out-of-plane magnetic anisotropy. Electrical magneto-transport measurements of these films as a function of temperature, magnetic field, and chemical potential reveal a lower carrier density and higher electron mobility compared with pristine Cd 3 A s2 films grown under similar conditions. This suggests that the surfactant effect might also serve to remove impurities from the bulk of the film. Further, we observe robust quantum transport (Shubnikov-de Haas oscillations and an incipient integer quantum Hall effect) in very thin (7 nm) Cd 3 A s2 films despite being in direct contact with a structurally disordered surface ferromagnetic overlayer.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Physical properties of the layered $\mathcal{f}$-electron van der Waals magnet Ce 2 Te 5

Here. we report a detailed study of the magnetic, transport, and thermodynamic properties of Ce 2 Te 5 single crystals, a layered $\mathcal{f}$-electron van der Waals magnet. Four consecutive transitions at ~5.2, 2.1, 0.9, and 0.4 K were observed in the ac-plane electrical resistivity $\rho(T)$, which were further confirmed in specific heat $C_\text{p}(T)$ measurements. Analysis of the magnetic susceptibility $\chi(T)$, the magnetic-field variation of $\rho(T)$, and the increase of the first transition temperature ($T_c$ ~ 5.2 K) with applied magnetic field indicates ferromagnetic order, while the decrease of the other transitions with field suggests different states with dominant antiferromagnetic interactions below $T_2$ ~ 2.1 K, $T_3$ ~ 0.9 K, and $T_4$ = 0.4 K. Critical behavior analysis around Tc that gives critical exponents $\beta$ = 0.31(2), $\gamma$ = 0.99(2), $\delta$ = 4.46(1), and $T_c$ = 5.32(1) K indicates that Ce 2 Te 5 shows a three-dimensional magnetic critical behavior. Moreover, the Hall resistivity ρxy indicates that Ce2Te5 is a multiband system with a relatively high electron mobility ~2900 cm 2 V –1 s –1 near $T_c$, providing further opportunities for future device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Operation of AlGaN Channel HEMTs at 850 °C With ON/OFF Ratio >10 4

Here, we report 850 ° C operation of ultrawide bandgap (UWBG) Al-rich Al 0.68 Ga 0.32 N channel high electron mobility transistors (HEMTs) at atmospheric pressure in nitrogen ambient. Temperature dependent DC electrical characteristics were measured in situ up to 850 ° C, after exposure to 850 ° C for 60 minutes, and at 25 ° C after high temperature testing. At 850 ° C (time, t = 0 min), all HEMTs tested maintained an on/off ratio greater than 10 4 (maximum of 4.6 × 10 4 ). The threshold voltage demonstrated excellent stability with less than ±10% deviation. After returning to 25 ° C, the devices showed negligible degradation. In fact, the off-state gate current decreased and on/off ratio slightly increased. The robustness of these UWBG AlGaN transistors at temperatures up to 850 ° C demonstrates their viability for extreme environment applications.

AlGaN↗
DOE OSTI2020

Operando Microscopy Characterization of Perovskite Solar Cells

In this work, we developed operando Kelvin probe force microscopy (KPFM) to study the electrostatic potential distribution across perovskite cells under light and forward bias to gain a deeper understanding of device operation physics. As a case study, we selected perovskite cells with a SnO 2 -based electron-selective layer (ESL), which showed great potential for fabricating high-efficiency, hysteresis-free devices due to the deeper conduction band and higher electron mobility of SnO 2 . The as-made device showed a main junction at the perovskite/spiro interface. After light soaking and applying forward bias, the junction quality improved, possibly explained by filling trap states at the interfaces and by the perovskite absorber perhaps having a self-poling effect; the main junction is observed at the ESL/perovskite interface. The results are consistent with current-voltage measurements, device performance improves mainly with fill factor enhancement. The operando KPFM results should more closely reflect the real case during current density-voltage measurements or solar cell operation. The operando KPFM technique that we have developed can be a powerful tool to provide a deeper understanding of the device operation mechanism and to further optimize the device.

14 SOLAR ENERGY↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2020

Graphite-Embedded High-Performance Insulated Metal Substrate for Wide-Bandgap Power Modules

Emerging wide-bandgap (WBG) semiconductor devices such as silicon carbide (SiC) metal–oxide semiconductor field-effect transistors (MOSFETs) and gallium nitride high-electron-mobility transistors can handle high power in reduced semiconductor areas better than conventional Si-based devices owing to superior material properties. With increased power loss density in a WBG-based converter and reduced die size in power modules, thermal management of power devices must be optimized for high performance. Here, we present a graphite-embedded insulated metal substrate (thermally-annealed-pyrolytic-graphite-embedded insulated metal substrate—IMSwTPG) designed for WBG power modules. Theoretical thermal performance analysis of graphite-embedded metal cores is presented, with design details for IMSwTPG with embedded graphite to replace a direct-bonded copper (DBC) substrate. The proposed IMSwTPG is compared with an aluminum nitride-based DBC substrate using finite-element thermal analysis for steady-state and transient thermal performance. The solutions’ thermal performances are compared under different coolant temperature and thermal loading conditions, and the proposed substrate's electrical performance is validated with static and dynamic characterization. Using graphite-embedded substrates, junction-to-case thermal resistance of SiC MOSFETs can be reduced up to 17%, and device current density can be increased by 10%, regardless of the thermal management strategy used to cool the substrate. Reduced transient thermal impedance of up to 40% of dies owing to increased heat capacity is validated in transient thermal simulations and experiments. The half-bridge power module's electrical performance is evaluated for on -state resistance, switching performance, and switching loss at three junction temperature conditions. The proposed substrate solution has minimal impact on conduction and switching performance of SiC MOSFETs.

42 ENGINEERING↗
DOE OSTI2023

Origin of Soft-Switching Output Capacitance Loss in Cascode GaN HEMTs at High Frequencies

Output capacitance (C OSS ) loss (E DISS ) is produced when the C OSS of a power device is charged and discharged, which ideally should be a lossless process. This loss was recently revealed to be a crucial concern for GaN high electron mobility transistors (HEMTs) in high-frequency soft-switching applications. Among various GaN devices, the composite-type, cascode GaN HEMT was reported to show the largest E DISS with a voltage dependence distinct from discrete GaN HEMTs. However, the physical origins of the EDISS in cascode GaN HEMTs remain unclear. This work fills this gap by identifying three loss components and, for the first time, experimentally quantifying them in the multi-MHz resonant switching. These loss components include a) the avalanche loss of Si MOSFET, b) the intrinsic E DISS of GaN HEMT, and c) the Si avalanche-induced GaN turn-ON loss. The last component was found to dominate E DISS at high voltage. By eliminating the Si avalanche and the associated loss components (a) and (c), the E DISS of cascode GaN HEMTs can be reduced by up to 75% at the price of an increase in output charge and switching transition time. Furthermore, these results provide new physical insights and practical guidelines to trim the soft-switching loss of cascode GaN HEMTs in high-frequency applications.

42 ENGINEERING↗
DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Au-free low-temperature ohmic contacts for AlGaN/AlN/GaN heterostructures

We report Au-free, Ti/Al/Ta ohmic contact on the AlGaN/AlN/GaN heterostructure using low annealing temperature is studied in this paper. With SiCl 4 plasma treatment at the recess-etched contact region, a low contact resistance of 0.52 Ω mm and a low sheet resistance of 373 Ω/sq are achieved after annealing at 550 °C for 30 s. The low annealing temperature also leads to better surface morphology. Furthermore, AlGaN/AlN/GaN high-electron-mobility transistors (HEMTs) are fabricated with the 550 °C, 30 s annealed Ti/Al/Ta ohmic contacts, and a maximum transconductance of 123 mS/mm and a maximum drain current of 510 mA/mm are obtained for a gate length of 4 μm. Based on Silvaco's Atlas device simulation framework, a scaled-down device with a short gate length of 1 μm would produce a maximum drain current density of 815 mA/mm. It indicates that the direct current performance of the HEMTs with the ohmic metal proposed in this work is considerably better than that with Au-based ohmic contact.

42 ENGINEERING↗
DOE OSTI2024

Electronic-grade epitaxial (111) KTaO 3 heterostructures

KTaO 3 heterostructures have recently attracted attention as model systems to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing challenges to creating heterostructure interfaces clean enough to reveal the intrinsic quantum properties. Here, we report superconducting heterostructures based on high-quality epitaxial (111) KTaO 3 thin films using an adsorption-controlled hybrid PLD to overcome the vapor pressure mismatch. Electrical and structural characterizations reveal that the higher-quality heterostructure interface between amorphous LaAlO 3 and KTaO 3 thin films supports a two-dimensional electron gas with substantially higher electron mobility, superconducting transition temperature, and critical current density than that in bulk single-crystal KTaO 3 -based heterostructures. Our hybrid approach may enable epitaxial growth of other alkali metal–based oxides that lie beyond the capabilities of conventional methods.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Contorted acene ribbons for stable and ultrasensitive neural probes

Organic materials that conduct both electrons and ions are integral to implantable bioelectronics because of their conformable nature. There is a dearth of these materials that are highly sensitive to cations, which are the majority ions on the surface of neurons. This manuscript offers a solution using an extended ribbon structure that is defect-free, providing high electronic mobility along its fused backbone, while the edge structure of these ribbons promotes high ionic conductivity. We incorporated these mixed ion/electron conductors into neural probes and implanted them in a rodent brain where they offer a suite of useful properties: high cation sensitivity, stability over several weeks after implantation, and biocompatibility. These materials represent an innovative class of implantable biosensors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

( Invited ) Ruggedness of SiC and GaN Power Transistors in Switching Based Tests

Currently, a spectrum of reliability tests are being performed by both device manufacturers and end users. Many of these qualification tests are operated within the device safe-operating-area (SOA), however, the devices often undergo dynamic events in many converter applications that can exceed the SOA boundaries. This paper presents our recent work on quantifying the out-of-SOA robustness of GaN power high-electron-mobility transistors (HEMTs) and SiC power MOSFETs by switching based tests. The unclamped inductive switching stresses are applied to p-gate GaN HEMTs to evaluate their surge-energy and overvoltage robustness. The continuous, hard-switching, turn-off stresses are applied to SiC MOSFETs to evaluate their overvoltage switching robustness. As a result, both experiments demonstrate the robustness of SiC and GaN devices under out-of-SOA switching events, and the physics of degradation and failure are understood.

42 ENGINEERING↗
DOE OSTI2021

First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (Al$_x$Ga$_{1-x}$)$_2$O$_3$ alloys

Alloys between Ga 2 O 3 and Al 2 O 3 (AGO) present a rich material space exhibiting numerous structural phases with unique optoelectronic properties that make them attractive candidates as ultra-wide bandgap (UWBG) semiconductors for next-generation power devices. Here we review the properties of AGO, focusing on theoretical results on the thermodynamics of Al incorporation and its consequences on the electronic structure. We review predictions and progress in experimentally realizing these alloys, as well as how composition influences important optoelectronic variables such as the band gap, band offsets, transport properties, and n-type dopability. A number of these parameters, such as the breakdown field (related to the band gap) and electron mobility, are discussed in assessing AGO in terms of relevant power device figures of merit. Altogether, the rapid progress and predicted properties highlight the promise of AGO as a model UWBG semiconductor platform with the potential to revolutionize power devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Topological Materials with Complex Long-Range Order

The overarching vision of this proposal is to understand exotic metallic behavior in frustrated quantum magnets. This problem is at the core of understanding a number of mysteries in the study of itinerant magnetism, and of high temperature superconductivity. The central challenge is that magnetic order is generally understood by localized magnetic moments. In these systems the mobile electrons form an ordered magnetic state, sometime breaking sharp symmetry, sometimes forming incommensurate order, and other times forming a spin liquid. The present research focuses on finding complex magnets that are in close proximity to a sea of metallic, itinerant electrons.

36 MATERIALS SCIENCE↗