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NASA NTRS2003

Block QCA Fault-Tolerant Logic Gates

Suitably patterned arrays (blocks) of quantum-dot cellular automata (QCA) have been proposed as fault-tolerant universal logic gates. These block QCA gates could be used to realize the potential of QCA for further miniaturization, reduction of power consumption, increase in switching speed, and increased degree of integration of very-large-scale integrated (VLSI) electronic circuits. The limitations of conventional VLSI circuitry, the basic principle of operation of QCA, and the potential advantages of QCA-based VLSI circuitry were described in several NASA Tech Briefs articles, namely Implementing Permutation Matrices by Use of Quantum Dots (NPO-20801), Vol. 25, No. 10 (October 2001), page 42; Compact Interconnection Networks Based on Quantum Dots (NPO-20855) Vol. 27, No. 1 (January 2003), page 32; Bit-Serial Adder Based on Quantum Dots (NPO-20869), Vol. 27, No. 1 (January 2003), page 35; and Hybrid VLSI/QCA Architecture for Computing FFTs (NPO-20923), which follows this article. To recapitulate the principle of operation (greatly oversimplified because of the limitation on space available for this article): A quantum-dot cellular automata contains four quantum dots positioned at or between the corners of a square cell. The cell contains two extra mobile electrons that can tunnel (in the quantummechanical sense) between neighboring dots within the cell. The Coulomb repulsion between the two electrons tends to make them occupy antipodal dots in the cell. For an isolated cell, there are two energetically equivalent arrangements (denoted polarization states) of the extra electrons. The cell polarization is used to encode binary information. Because the polarization of a nonisolated cell depends on Coulomb-repulsion interactions with neighboring cells, universal logic gates and binary wires could be constructed, in principle, by arraying QCA of suitable design in suitable patterns. Heretofore, researchers have recognized two major obstacles to realization of QCA-based logic gates: One is the need for (and the difficulty of attaining) operation of QCA circuitry at room temperature or, for that matter, at any temperature above a few Kelvins. It has been theorized that room-temperature operation could be made possible by constructing QCA as molecular-scale devices. However, in approaching the lower limit of miniaturization at the molecular level, it becomes increasingly imperative to overcome the second major obstacle, which is the need for (and the difficulty of attaining) high precision in the alignments of adjacent QCA in order to ensure the correct interactions among the quantum dots.

Firjany, Amir↗

DOE OSTI2020

Comparison of Fused-Ring Electron Acceptors with One- and Multidimensional Conformations

Three fused-ring electron acceptors (FXIC-1, FXIC-2, and FXIC-3) were designed and synthesized. This FXIC series has similar electron-rich central units and the same electron-poor termini. Due to the different steric structures of fluorene, bifluorenylidene, and spirobifluorene, FXIC-1 is a one-dimensional (1D) crystal, while FXIC-2 and FXIC-3 are multidimensional (MD) amorphous materials. The conformations of the FXIC series have a slight impact on their absorption and energy levels. FXIC-1 has higher electron mobility than FXIC-2 and FXIC-3. When blending with different polymer donors (PTB7-Th, J71, and PM7), the FXIC-1-based organic solar cells have efficiencies higher than those of the FXIC-2/FXIC-3-based cells. Finally, the ternary-blend cells based on PTB7-Th:F8IC with FXIC-1, FXIC-2, and FXIC-3 show similar efficiencies, which are all better than those of the binary-blend devices.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Radiation-Hardened GaN HEMT and Cell Design, Modeling, and Fabrication for Nuclear Instrumentation Applications

Recent advances in nuclear power generation technologies show great promise for efficient, safe generation of carbon-free power in the near future. Consequently, many new generation reactor designs are being pursued by government and industry groups, including both fission- and fusion-based technologies. Radiation- and temperature-tolerant sensor technology continues to advance, yet development of the electronics/instrumentation technologies suitable for these environments have fallen behind. Industry has adequately addressed harsh environment electronics needs for low earth orbit satellites, but the much more extreme conditions associated with electronics placed near or in a reactor core remain unaddressed. This project investigates the use of gallium nitride (GaN) circuit technology to address the unique needs for sensor interface electronics and communications in reactor environments. This report provides a summary of the first year’s project activities related to developing and optimizing devices and circuits for this GaN high electronic mobility transistor (HEMT) process. Activities reported include multiple analog and digital circuit designs simulated using custom Verilog-A models generated from measured GaN devices fabricated in the target process. Digital circuit designs included fundamental logic circuits such as an inverter, NAND, NOR, AND and OR gates, as well as a 5-stage ring oscillator. Each design was simulated using an open-source SPICE simulator, and an integrated circuit layout was produced of each design for use in future fabrication. Analog circuit designs focused on the fundamental building blocks to be used to construct sensor interface and communications circuits. These included current mirrors, matched differential pairs, and a Gilbert cell mixer design, each with an associated integrated circuit layout. Layout tools used for these designs included two open-source packages—KLayout and Magic—which were customized for specific use with the OSU GaN process layers. Design rules and preliminary device extraction capabilities were built for the Magic tool to enable device extraction and subsequent netlist generation for SPICE simulation. Finally, future research directions for year two are summarized. When the year-two directions are implemented, the project will be in position to advance the state of the art in electronics for near- or in-reactor sensor interfacing and communications.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2020

Semi-adsorption-controlled growth window for half-Heusler FeVSb epitaxial films

The electronic, magnetic, thermoelectric, and topological properties of Heusler compounds (composition XYZ or X 2 YZ) are highly sensitive to stoichiometry and defects. Here we establish the existence and experimentally map the bounds of a semi-adsorption-controlled growth window for semiconducting half-Heusler FeVSb films, grown by molecular beam epitaxy (MBE). We show that due to the high volatility of Sb, the Sb stoichiometry is self-limiting for a finite range of growth temperatures and Sb fluxes, similar to the growth of III-V semiconductors such as GaSb and GaAs. Films grown within this window are nearly structurally indistinguishable by x-ray diffraction (XRD) and reflection high energy electron diffraction (RHEED). Here, the highest electron mobility and lowest background carrier density are obtained towards the Sb-rich bound of the window, suggesting that Sb vacancies may be a common defect. Similar semi-adsorption-controlled bounds are expected for other ternary intermetallics that contain a volatile species Z = {Sb, As, Bi}, e.g., CoTiSb, LuPtSb, GdPtBi, and NiMnSb. However, outstanding challenges remain in controlling the remaining Fe/V (X/Y) transition metal stoichiometry.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Layer-dependent optically induced spin polarization in InSe

Optical control of spin in semiconductors has been pioneered using nanostructures of III-V and II-VI semi-conductors, but the emergence of two-dimensional van der Waals materials offers an alternative low-dimensional platform for spintronic phenomena. Indium selenide (InSe), a group-III monochalcogenide van der Waals material, has shown promise for optoelectronics due to its high electron mobility, tunable direct band gap, and quantum transport. In addition to these confirmed properties, there are predictions of spin-dependent optical selection rules, suggesting the potential for all-optical excitation and control of spin in a two-dimensional layered material. Despite these predictions, layer-dependent optical spin phenomena in InSe have yet to be explored. Here, we present measurements of layer-dependent optical spin dynamics in few-layer and bulk InSe. Polarized photoluminescence reveals layer-dependent optical orientation of spin, thereby demonstrating the optical selection rules in few-layer InSe. Spin dynamics are also studied in many-layer InSe using time-resolved Kerr rotation spectroscopy. By applying out-of-plane and in-plane static magnetic fields for polarized emission measurements and Kerr measurements, respectively, the g factor for InSe was extracted. Further investigations are done by calculating precession values using a k · p model, which is supported by ab initio density functional theory. Comparison of predicted precession rates with experimental measurements highlights the importance of excitonic effects in InSe for understanding spin dynamics. In conclusion, optical orientation of spin is an important prerequisite for optospintronic phenomena and devices, and these first demonstrations of layer-dependent optical excitation of spins in InSe lay the foundation for combining layer-dependent spin properties with advantageous electronic properties found in this material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS2019

Characterization and Failure Analysis of 650 V Enhancement-Mode GaN HEMT for Cryogenically-Cooled Power Electronics

In order to evaluate the feasibility of newly developed GaN devices in a cryogenically-cooled converter, this paper characterizes a 650 V enhancement-mode Gallium-Nitride high-electron-mobility transistor (GaN HEMT) at cryogenic temperatures. The characterization includes both static and dynamic behaviors. The results show that this GaN HEMT is an excellent device candidate to be applied in cryogenic-cooled applications. For example, transconductance at cryogenic temperature (93 K) is 2.5 times higher than one at room temperature (298 K), and accordingly, peak di/dt during turn-on transients at cryogenic temperature is around 2 times of that at room temperature. Moreover, the on-resistance of the channel at cryogenic temperature is only one-fifth of that at room temperature. The corresponding explanations of performance trends at cryogenic temperatures are also given from the view of semiconductor physics. In addition, several device failures were observed during the dynamic characterization of GaN HEMTs at cryogenic temperatures. The ultra-fast switching speed induced high di/dt and dv/dt at cryogenic temperatures amplifies the negative effects of parasitics inside the switching loop. Based on failure waveforms, two failure modes were classified, and detailed failure mechanisms caused by ultra-fast switching speed are given in this paper.

Static and dynamic characterization↗

DOE OSTI2026

Epitaxy of Beta-Ga2O3 on Highly-Offcut (Greater than 10 Degrees) Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction.1 These films show step-flow growth from (-201) step-edges and high electron mobility. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (4.8 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe 100% reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Highly Efficient Ternary Solar Cells with Efficient Förster Resonance Energy Transfer for Simultaneously Enhanced Photovoltaic Parameters

Introducing a third component into organic bulk heterojunction solar cells has become an effective strategy to improve photovoltaic performance. Meanwhile, the rapid development of non-fullerene acceptors (NFAs) has pushed the power conversion efficiency (PCE) of organic solar cells (OSCs) to a higher standard. In this study, a series of fullerene-free ternary solar cells are fabricated based on a wide bandgap acceptor, IDTT-M, together with a wide bandgap donor polymer PM6 and a narrow bandgap NFA Y6. Insights from the morphological and electronic characterizations reveal that IDTT-M has been incorporated into Y6 domains without disrupting its molecular packing and sacrificing its electron mobility and work synergistically with Y6 to regulate the packing pattern of PM6, leading to enhanced hole mobility and suppressed recombination. IDTT-M further functions as an energy-level mediator that increases open-circuit voltage ( V OC ) in ternary devices. In addition, efficient Förster resonance energy transfer (FRET) between IDTT-M and Y6 provides a non-radiative pathway for facilitating exciton dissociation and charge collection. As a result, the optimized ternary device features a significantly improved PCE up to 16.63% with simultaneously enhanced short-circuit current ( J SC ), V OC , and fill factor (FF).

36 MATERIALS SCIENCE↗

DOE OSTI2023

Mechanical, Morphological, and Charge Transport Properties of NDI Polymers with Variable Built‐in Π‐Conjugation Lengths Probed by Simulation and Experiment

Abstract Mechanically deformable polymeric semiconductors are a key material for fabricating flexible organic thin‐film transistors (FOTFTs)—the building block of electronic circuits and wearable electronic devices. However, for many π‐conjugated polymers achieving mechanical deformability and efficient charge transport remains challenging. Here the effects of polymer backbone bending stiffness and film microstructure on mechanical flexibility and charge transport are investigated via experimental and computational methods for a series of electron‐transporting naphthalene diimide (NDI) polymers having differing extents of π‐conjugation. The results show that replacing increasing amounts of the π‐conjugated comonomer dithienylvinylene (TVT) with the π‐nonconjugated comonomer dithienylethane (TET) in the backbone of the fully π‐conjugated polymeric semiconductor, PNDI‐TVT 100 (yielding polymeric series PNDI‐TVT x , 100 ≥x≥ 0), lowers backbone rigidity, degree of texturing, and π–π stacking interactions between NDI moieties. Importantly, this comonomer substitution increases the mechanical robustness of PNDI‐TVT x while retaining efficient charge transport. Thus, reducing the TVT content of PNDI‐TVT x suppresses film crack formation and dramatically stabilizes the field‐effect electron mobility upon bending (e.g., 2 mm over 2000 bending cycles). This work provides a route to tune π–π stacking in π‐conjugated polymers while simultaneously promoting mechanical flexibility and retaining good carrier mobility in FOTFTs.

Chemistry↗

DOE OSTI2024

Design Principles of Diketopyrrolopyrrole‐Thienopyrrolodione Acceptor 1 –Acceptor 2 Copolymers

Abstract The design principles of acceptor 1 –acceptor 2 copolymers featuring alternating diketopyrrolopyrrole (DPP) and thienopyrrolodione (TPD) moieties are investigated. The investigated series of polymers is obtained by varying the aromatic linker between the two acceptor motifs between thiophene, thiazole, pyridine, and benzene. High electron affinities between 3.96 and 4.42 eV, facilitated by the synergy of the acceptor motifs are determined with optical gaps between 1.37 and 2.02 eV. Grazing incidence wide‐angle X‐ray scattering studies reveal a range of film morphologies after thermal annealing, including face‐on, end‐on and superstructure edge‐on‐like crystallites. Conversely, all materials form thin edge‐on layers on the polymer–air interface, as demonstrated by multi‐elemental near‐edge X‐ray absorption fine‐structure spectroscopy. The benefit of the electron‐deficient linkers thiazole and pyridine is evident: In organic field effect transistors, electron mobilities of up to 4.6 × 10 −2 cm 2 V −1 s −1 are obtained with outstanding on/off current ratios of 5 × 10 5 , facilitated by the absence of detectable hole transport in these materials. Viability for all‐polymer solar cells is assessed in active layer blends with the donor polymer PM6, yielding a maximum average power conversion efficiency of 4.8% and an open circuit voltage above 1 V.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Efficient and Photostable Organic Solar Cells Achieved by Alloyed Dimer Acceptors with Tailored Linker Structures

Abstract High power conversion efficiency (PCE) and long‐term stability are prerequisites for commercialization of organic solar cells (OSCs). Herein, two dimer acceptors (DYTVT and DYTCVT) are developed with different properties through linker engineering, and study their effects as alloy‐like acceptors on the photovoltaic performance and photostability of OSCs. These ternary OSCs effectively combine the advantages of both dimer acceptors. DYTVT, characterized by its high backbone planarity, ensures elevated electron mobility and high glass‐transition temperature (T g ), leading to efficient charge transport and enhanced photostability of OSCs. Conversely, DYTCVT, with its significant dipole moment and electrostatic potential, enhances compatibility of the alloy acceptors with donors and refines the blend morphology, facilitating efficient charge generation in OSCs. Consequently, D18:DYTVT:DYTCVT OSCs exhibit higher PCE (18.4%) compared to D18:MYT (monomer acceptor, PCE = 16.5%), D18:DYTVT (PCE = 17.4%), and D18:DYTCVT (PCE = 17.0%) OSCs. Furthermore, owing to higherT g of alloy acceptors (133 °C) than MYT (T g = 80 °C) and DYTCVT (T g = 120 °C), D18:DYTVT:DYTCVT OSCs have significantly higher photostability (t 80% lifetime = 4250 h under 1‐sun illumination) compared to D18:MYT (t 80% lifetime = 40 h) and D18:DYTCVT OSCs (t 80% lifetime = 2910 h).

Chemistry↗

DOE OSTI2020

High‐Performance Fluorinated Fused‐Ring Electron Acceptor with 3D Stacking and Exciton/Charge Transport

Abstract A new fluorinated electron acceptor (FINIC) based on 6,6,12,12‐tetrakis(3‐fluoro‐4‐hexylphenyl)‐indacenobis(dithieno[3,2‐ b ;2 ′ ,3 ′ ‐ d ]thiophene) as the electron‐donating central core and 5,6‐difluoro‐3‐(1,1‐dicyanomethylene)‐1‐indanone as the electron‐deficient end groups is rationally designed and synthesized. FINIC shows similar absorption profile in dilute solution to the nonfluorinated analogue INIC. However, compared with INIC, FINIC film shows red‐shifted absorption, down‐shifted frontier molecular orbital energy levels, enhanced crystallinity, and more ordered molecular packing. Single‐crystal structure data show that FINIC molecules pack into closer 3D “network” motif through H‐bonding and π–π interaction, while INIC molecules pack into incompact “honeycomb” motif through only π–π stacking. Theoretical calculations reveal that FINIC has stronger electronic coupling and more molecular interactions than INIC. FINIC has higher electron mobilities in both horizontal and vertical directions than INIC. Moreover, FINIC and INIC support efficient 3D exciton transport. PBD‐SF/FINIC blend has a larger driving force for exciton splitting, more efficient charge transfer and photoinduced charge generation. Finally, the organic solar cells based on PBD‐SF/FINIC blend yield power conversion efficiency of 14.0%, far exceeding that of the PBD‐SF/INIC‐based devices (5.1%).

Dai, Shuixing↗

DOE OSTI2025

2D Vacancy Confinement in Anatase TiO 2 for Enhanced Photocatalytic Activities

Abstract Light‐driven energy conversion devices call for the atomic‐level manipulation of defects associated with electronic states in solids. However, previous approaches to produce oxygen vacancy (V O ) as a source of sub‐bandgap energy levels have hampered the precise control of the distribution and concentration ofV O . Here, a new strategy to spatially confineV O at the homo‐interfaces is demonstrated by exploiting the sequential growth of anatase TiO 2 under dissimilar thermodynamic conditions. Remarkably, metallic behavior with high carrier density and electron mobility is observed after sequential growth of the TiO 2 films under low pressure and temperature (L‐TiO 2 ) on top of high‐quality anatase TiO 2 epitaxial films (H‐TiO 2 ), despite the insulating properties of L‐TiO 2 and H‐TiO 2 single layers. Multiple characterizations elucidate that theV O layer is geometrically confined within 4 unit cells at the interface, along with low‐temperature crystallization of upper L‐TiO 2 films; this 2DV O layer is responsible for the formation of in‐gap states, promoting photocarrier lifetime (≈300%) and light absorption. These results suggest a synthetic strategy to locally confine functional defects and emphasize how sub‐bandgap energy levels in the confined imperfections influence the kinetics of light‐driven catalytic reactions.

Chemistry↗

DOE OSTI2024

Al‐Rich AlGaN Transistors with Regrown p‐AlGaN Gate Layers and Ohmic Contacts

Abstract Epitaxial regrowth processes are presented for achieving Al‐rich aluminum gallium nitride (AlGaN) high electron mobility transistor (HEMTs) with p‐type gates with large, positive threshold voltage for enhancement mode operation and low resistance Ohmic contacts. Utilizing a deep gate recess etch into the channel and an epitaxial regrown p‐AlGaN gate structure, an Al 0.85 Ga 0.15 N barrier/Al 0.50 Ga 0.50 N channel HEMT with a large positive threshold voltage (V TH = +3.5 V) and negligible gate leakage is demonstrated. Epitaxial regrowth of AlGaN avoids the use of gate insulators which can suffer from charge trapping effects observed in typical dielectric layers deposited on AlGaN. Low resistance Ohmic contacts (minimum specific contact resistance = 4 × 10 −6 Ω cm 2 , average = 1.8 × 10 −4 Ω cm 2 ) are demonstrated in an Al 0.85 Ga 0.15 N barrier/Al 0.68 Ga 0.32 N channel HEMT by employing epitaxial regrowth of a heavily doped, n‐type, reverse compositionally graded epitaxial structure. The combination of low‐leakage, large positive threshold p‐gates and low resistance Ohmic contacts by the described regrowth processes provide a pathway to realizing high‐current, enhancement‐mode, Al‐rich AlGaN‐based ultra‐wide bandgap transistors.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Binary Blend All‐Polymer Solar Cells with a Record Efficiency of 17.41% Enabled by Programmed Fluorination Both on Donor and Acceptor Blocks

Abstract Despite remarkable breakthrough made by virtue of “polymerized small‐molecule acceptor (PSMA)” strategy recently, the limited selection pool of high‐performance polymer acceptors and long‐standing challenge in morphology control impede their further developments. Herein, three PSMAs of PYDT‐2F, PYDT‐3F, and PYDT‐4F are developed by introducing different fluorine atoms on the end groups and/or bithiophene spacers to fine‐tune their optoelectronic properties for high‐performance PSMAs. The PSMAs exhibit narrow bandgap and energy levels that match well with PM6 donor. The fluorination promotes the crystallization of the polymer chain for enhanced electron mobility, which is further improved by following n ‐doping with benzyl viologen additive. Moreover, the miscibility is also improved by introducing more fluorine atoms, which promotes the intermixing with PM6 donor. Among them, PYDT‐3F exhibits well‐balanced high crystallinity and miscibility with PM6 donor; thus, the layer‐by‐layer processed PM6/PYDT‐3F film obtains an optimal nanofibril morphology with submicron length and ≈23 nm width of fibrils, facilitating the charge separation and transport. The resulting PM6/PYDT‐3F devices realizes a record high power conversion efficiency (PCE) of 17.41% and fill factor of 77.01%, higher than the PM6/PYDT‐2F (PCE = 16.25%) and PM6/PYDT‐4F (PCE = 16.77%) devices.

Zhou, Dehong↗

DOE OSTI2022

Terpolymer Donor with Inside Alkyl Substituents on Thiophene π ‐Bridges toward Thiazolothiazole A 2 ‐Unit Enables 18.21% Efficiency of Polymer Solar Cells

Abstract PM6 is a widely used D–A copolymer donor in the polymer solar cells (PSCs). Incorporating second electron‐withdrawing (A 2 ) units into PM6 backbone by ternary D–A 1 –D–A 2 random copolymerization strategy is an effective approach to further improve its photovoltaic performance. Here, the authors synthesize the PM6‐based terpolymers by introducing thiazolothiazole as the A 2 units connecting with thiophene π‐bridges attaching alkyl substituent towards the A 2 unit (PMT‐CT) or towards D‐unit (PMT‐FT), and study the effect of the alkyl substituent position on the photovoltaic performance of them. Two terpolymers PMT‐FT‐10 and PMT‐CT‐10 are obtained by incorporating 10% A 2 units in the terpolymers. The film of PMT‐CT‐10 shows slightly up‐shifted highest occupied molecular orbital (HOMO) energy levels while better co‐planar structure than that of PMT‐FT‐10. Meanwhile, the PMT‐CT‐10:Y6 blend film exhibits better molecular packing properties, more proper phase separation and more balanced hole and electron mobilities, which are beneficial to more efficient exciton dissociation, efficient charge transport and weaker bimolecular recombination. Consequently, the PMT‐CT‐10 based PSCs obtain the highest power conversion efficiency of 18.21%. The results indicate that side chain position on the thiophene π‐bridges influence the device performance of the terpolymer donors, and PMT‐CT‐10 is a high efficiency polymer donor for the PSCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Electrical and Elastic Properties of Individual Single-Layer Nb 4 C 3 T x MXene Flakes

2D carbides and nitrides (MXenes) are widely recognized for their exceptional promise for numerous applications. However, physical property measurements of their individual monolayers remain very limited despite their importance for revealing the intrinsic physical properties of MXenes. The first mechanical and electrical measurements of individual single-layer flakes of Nb 4 C 3 T x MXene, which are prepared via an improved synthetic method are reported. Characterization of field-effect transistor devices based on individual single-layer Nb 4 C 3 T x flakes shows an electrical conductivity of 1024 ± 165 S cm -1 , which is two orders of magnitude higher than the previously reported values for bulk Nb 4 C 3 T x assemblies, and an electron mobility of 0.41 ± 0.27 cm 2 V -1 s -1 . Atomic force microscopy nanoindentation measurements of monolayer Nb 4 C 3 T x membranes yield an effective Young's modulus of 386 ± 13 GPa, assuming a membrane thickness of 1.26 nm. This is the highest value reported for nanoindentation measurements of solution-processable 2D materials, revealing the potential of Nb 4 C 3 T x as a primary component for various mechanical applications. In conclusion, the agreement between the mechanical properties of 2D Nb 4 C 3 T x MXene and cubic NbC suggests that the extensive experimental data on bulk carbides could be useful for identifying new MXenes with improved functional characteristics.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Design of Star‐Shaped Trimer Acceptors for High‐Performance (Efficiency > 19%), Photostable, and Mechanically Robust Organic Solar Cells

Abstract High power conversion efficiency (PCE), long‐term stability, and mechanical robustness are prerequisites for the commercial applications of organic solar cells (OSCs). In this study, a new star‐shaped trimer acceptor (TYT‐S) is developed and high‐performance OSCs with a PCE of 19.0%, high photo‐stability (t 80% lifetime = 2600 h under 1‐sun illumination), and mechanical robustness with a crack‐onset strain (COS) of 21.6% are achieved. The isotropic molecular structure of TYT‐S affords efficient multi‐directional charge transport and high electron mobility. Furthermore, its amorphous structure prevents the formation of brittle crystal‐to‐crystal interfaces, significantly enhancing the mechanical properties of the OSC. As a result, the TYT‐S‐based OSCs demonstrate a significantly higher PCE (19.0%) and stretchability (COS = 21.6%) than the linear‐shaped trimer acceptor (TYT‐L)‐based OSCs (PCE = 17.5% and COS = 6.4%) and the small‐molecule acceptor (MYT)‐based OSCs (PCE = 16.5% and COS = 1.3%). In addition, the increased molecular size of TYT‐S, relative to that of MYT and dimer (DYT), suppresses the diffusion kinetics of the acceptor molecules, substantially improving the photostability of the OSCs. Finally, to effectively demonstrate the potential of TYT‐S, intrinsically stretchable (IS)‐OSCs are constructed. The TYT‐S‐based IS‐OSCs exhibit high device stretchability (strain at PCE 80% = 31%) and PCE of 14.4%.

Chemistry↗