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Results for “DENSITY OF STATES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Spinodal electronic phase separation during insulator-metal transitions

Electronic phase transitions such as insulator-metal transitions are common in strongly correlated systems. Here, using a combination of thermodynamic linear-stability analysis and phase-field simulations and employing VO 2 as a prototypical example, we predict that an insulator-metal transition driven by photoexcitation may involve an intermediate, modulated charge density state with a temperature-dependent characteristic wavelength. It is shown that such an intermediate two-phase electronic state is formed through a spinodal mechanism and that its formation can be generic for insulator-metal transitions driven by fast stimuli. This transient electronic phase separation is expected to stimulate future experimental and computational efforts.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Collective enhancement in the exciton model

The preequilibrium reaction mechanism is considered in the context of the exciton model. A modification to the one-particle–one-hole state density is studied which can be interpreted as a collective enhancement. The magnitude of the collective enhancement is estimated by simulating the Lawrence Livermore National Laboratory (LLNL) pulsed-spheres neutron-leakage spectra. Here the impact of the collective enhancement is explored in the context of the highly deformed actinide, 239 Pu. A consequence of this enhancement is the removal of fictitious levels in the distorted-wave Born approximation often used in modern nuclear reaction codes.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2024

Quantum reference frames from top-down crossed products

All physical observations are made relative to a reference frame, which is a system in its own right. If the system of interest admits a group symmetry, the reference frame observing it must transform commensurately under the group to ensure the covariance of the combined system. We point out that the crossed product is a way to realize quantum reference frames from the bottom-up; adjoining a quantum reference frame and imposing constraints generates a crossed product algebra. We provide a top-down specification of crossed product algebras and show that one cannot obtain inequivalent quantum reference frames using this approach. As a remedy, we define an abstract algebra associated to the system and symmetry group built out of relational crossed product algebras associated with different choices of quantum reference frames. We term this object the G -framed algebra, and show how potentially inequivalent frames are realized within this object. We comment on this algebra’s analog of the classical Gribov problem in gauge theory, its importance in gravity where we show that it is relevant for semiclassical de Sitter and potentially beyond the semiclassical limit, and its utility for understanding the frame dependence of physical notions like observables, density states, and entropies. Published by the American Physical Society 2024

Astronomy & Astrophysics↗
DOE OSTI2022

Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Interplay of Electrode Heterogeneity and Lithium Plating

Lateral microstructure heterogeneity in anodes is known to induce nonuniform current density, state of charge, and lithium plating. This means that such electrode heterogeneity can limit the fast charging of lithium-ion batteries. In this work, a combination of experiments and simulation is employed to understand the effect of mm scale lateral heterogeneity on cell aging. A previously developed model was extended to efficiently simulate SEI formation and Li plating for independent regions of an electrode. The model consists of three parallel regions each described under a P2D framework and with a distinct ionic resistance and possibly active material loading. The results suggest that during fast charge when the active material is uniformly distributed across the three regions, the region with the highest resistance reaches the end of life sooner than the other regions. There is also positive feedback from Li metal filling the pores near the separator interface that further accelerates lithium plating. Lastly, when there is a non-uniform active material distribution associated with the ionic resistance heterogeneity, tight competition between regions can occur, leading to less overall lithium plating and plating that is more uniform between regions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Entanglement Traffic Engineering in Quantum Optical Fiber Networks based on High-Dimensional Kerr Optical Frequency Combs

The purpose of the project was to explore the performance of entanglement protocols based on microresonator Kerr optical frequency combs. We have addressed these challenges by developing a rigorous frequency-bin approach that allowed us to determine an explicit steady-state density operator for quantum microcombs below threshold. Our novel approach has allowed us to derived an explicit formula for the density operator on the frequency-bin basis, and to propose a complete description of quantum Kerr combs regardless of the number of sidemodes or loss-induced coupling to the environment. This formalism also allows for the explicit determination of their fidelity, purity, and entropy. These results are expected to permit the exploitation of the full potential of entangled microcombs for quantum technology.

42 ENGINEERING↗
DOE OSTI2025

Nuclear Astrophysics through simulations of neutron star mergers using Monte‐Carlo neutrino radiation transport (DE-SC0020435 Final Technical Report)

Neutron star mergers are an important source of information for nuclear physics. Except for black holes, neutron stars are the densest macroscopic objects known to exist in the Universe. They provide us with a remarkable laboratory to study the poorly understood high-density states of matter, complementing the study of heavy nuclei performed by nuclear physics experiments on Earth. Collisions of neutron stars are of particular interest. They are among the most energetic events observable in the Universe, powering a broad range of signals across the electromagnetic spectrum as well as gravitational wave signals. These signals contain important information about the properties of extremely dense matter. Colliding neutron stars additionally eject large amounts of neutron-rich material into the surrounding interstellar medium -- material that then undergoes rapid neutron-capture (r-process) nucleosynthesis, the mechanism thought to be responsible for the production of about half of the heavy nuclei. In order to understand current and future observations of neutron star mergers, we need reliable models for the signals that they power. An important component in the construction of such models are numerical simulations of colliding neutron stars. These simulations are costly, running for multiple months on supercomputers, and require the inclusion of complex physics (general relativity, magnetohydrodynamics, neutrino physics, nuclear reactions). In this document, we describe the development of new methods for the treatment of neutrinos in merger simulations, as well as the first simulations capable of evolving the equations of neutrino radiation transport directly and their impact on our understanding of neutron star mergers and more broadly in nuclear astrophysics. We also discuss additional work performed in the study of nucleosynthesis and neutrino physics in neutron star mergers as part of Early Career Award DE-SC0020435.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
NASA NTRS1975

Effects of ionizing radiation on CCD's

The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.

Hartsell, G. A.↗
NASA NTRS1976

Development of InSb charge-coupled infrared imaging devices: Linear imager

The following results were accomplished in the development of charge coupled infrared imaging devices: (1) a four-phase overlapping gate with 9 transfers (2-bits) and 1.0-mil gate lengths was successfully operated, (2) the measured transfer efficiency of 0.975 for this device is in excellent agreement with predictions for the reduced gate length device, (3) mask revisions of the channel stop metal on the 8582 mask have been carried out with the result being a large increase in the dc yield of the tested devices, (4) partial optical sensitivity to chopped blackbody radiation was observed for an 8582 9-bit imager, (5) analytical consideration of the modulation transfer function degradation caused by transfer inefficiency in the CCD registers was presented, and (6) for larger array lengths or for the insertion of isolated bits between sensors, improvements in InSb fabrication technology with corresponding decrease in the interface state density are required.

Phillips, J. D.↗
NASA NTRS1976

Radical formation, chemical processing, and explosion of interstellar grains

The ultraviolet radiation in interstellar space is shown to create a sufficient steady-state density of free radicals in the grain mantle material consisting of oxygen, carbon, nitrogen, and hydrogen to satisfy the critical condition for initiation of chain reactions. The criterion for minimum critical particle size for maintaining the chain reaction is of the order of the larger grain sizes in a distribution satisfying the average extinction and polarization measures. The triggering of the explosion of interstellar grains leading to the ejection of complex interstellar molecules is shown to be most probable where the grains are largest and where radiation is suddenly introduced; i.e., in regions of new star formation. Similar conditions prevail at the boundaries between very dark clouds and H II regions. When the energy released by the chemical activity of the free radicals is inadequate to explode the grain, the resulting mantle material must consist of extremely large organic molecules which are much more resistant to the hostile environment of H II regions than the classical dirty-ice mantles made up of water, methane, and ammonia.

Greenberg, J. M.↗
NASA NTRS1976

Fixed charge in Cr-metallized MOS capacitors

It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.

Lewicki, G.↗
NASA NTRS1976

Accelerated heat-aging studies on fluororubber in various media

Heat-aging studies were conducted on fluororubber (copolymers of vinylidene fluoride and perfluoropropylene) using N,N-dicinnamylidene-1,6-hexanediamine, a Schiff's base of 1,6-hexanediamine, and MgO as acid acceptor. The principal technique employed was chemical stress relaxation for determining network changes brought about in the heat-aged fluororubber. This technique was backed up by swelling measurements, gel permeation chromatography, and IR spectroscopy. Stress relaxation curves are plotted for a wide range of variation in parameters (time, crosslinking density, state of curing, temperature, intermittent and continuous relaxation).

Kalfayan, S. H.↗
NASA NTRS1977

Properties of TiO2 thin films and a study of the TiO2-GaAs interface

Titanium dioxide (TiO2) films prepared by chemical vapor deposition were investigated in this study for the purpose of the application in the GaAs metal-insulator-semiconductor field-effect transistor. The degree of crystallization increases with the deposition temperature. The current-voltage study, utilizing an Al-TiO2-Al MIM structure, reveals that the d-c conduction through the TiO2 film is dominated by the bulk-limited Poole-Frenkel emission mechanism. The dependence of the resistivity of the TiO2 films on the deposition environment is also shown. The results of the capacitance-voltage study indicate that an inversion layer in an n-type substrate can be achieved in the MIS capacitor if the TiO2 films are deposited at a temperature higher than 275 C. A process of low temperature deposition followed by the pattern definition and a higher temperature annealing is suggested for device fabrications. A model, based on the assumption that the surface state densities are continuously distributed in energy within the forbidden band gap, is proposed to interpret the lack of an inversion layer in the Al-TiO2-GaAs MIS structure with the TiO2 films deposited at 200 C.

Chen, C. Y.↗
NASA NTRS1976

Energy distributions and radiation transport in uranium plasmas

An approximate analytic model, based on continuous electron slowing, has been used for survey calculations. Where more accuracy is required, a Monte Carlo technique is used which combines an analytic representation of Coulombic collisions with a random walk treatment of inelastic collisions. The calculated electron distributions have been incorporated into another code that evaluates both the excited atomic state densities within the plasma and the radiative flux emitted from the plasma.

Miley, G. H.↗