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At least 217 records · Page 12

A case study: Comparing testers for means and variances in a balanced incomplete block design

In this article, we present a gauge R & R study that is different from the standard setup in several ways. A balanced incomplete block design (BIBD) was used to collect the data because the measurement is destructive. Besides addressing reproducibility, differences in repeatability (i.e., tester variances) were also of interest. Here we use Bayesian methods to analyze the study data to address whether the three tester means and variances are similar. We also consider what happens if the BIBD structure of the data and possibly different tester variances are ignored in analyzing the study data.

42 ENGINEERING↗

Comparative Studies of Optoelectronic Properties, Structures, and Surface Morphologies for Phosphorus-Doped Poly-Si/SiOx Passivating Contacts

We investigated and compared optoelectronic properties, crystallographic structures, and nanoscale surface morphologies of ex-situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition (PECVD), and low-pressure chemical vapour deposition (LPCVD)). Across all these deposition technologies, a similar trend is observed: higher diffusion temperatures yield films that are more crystalline but have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. Firstly, the LPCVD method yields the roughest surface and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the smoothest surface for both as-deposited Si and annealed poly-Si films. Secondly, as-deposited sputtered and PECVD Si films contain only an amorphous phase whereas as-deposited LPCVD films has already had some crystalline phase. Thirdly, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods it is weakly dependent on thickness.

crystallographic structures↗

Comparative Study of Finite Element Methods Using the Time-Accuracy-Size(TAS) Spectrum Analysis

We present a performance analysis appropriate for comparing algorithms using different numerical discretizations. By taking into account the total time-to-solution, numerical accuracy with respect to an error norm, and the computation rate, a cost-benefit analysis can be performed to determine which algorithm and discretization are particularly suited for an application. This work extends the performance spectrum model in for interpretation of hardware and algorithmic tradeoffs in numerical PDE simulation. As a proof-of-concept, popular finite element software packages are used to illustrate this analysis for Poisson’s equation.

97 MATHEMATICS AND COMPUTING↗

SAGE II aerosol data validation - Comparative studies of SAGE II and SAM II data sets

Data from the Stratospheric Aerosol and Gas Experiment (SAGE II) satellite are compared with data from the Stratospheric Aerosol Measurement (SAM II) satellite. Both experiments produce aerosol extinction profiles by measuring the attenuation of solar radiation during each sunrise and sunset observed by the satelltie. The SAGE II obtains profiles at 1.02 microns and three smaller wavelengths, whereas the SAM II measures at only one radiometric channel at 1.0 microns. It is found that the differences between the two sets of data are generally within the error bars associated with each measurement. In addition, the sunrise and sunset data from SAGE II are analyzed.

Yue, G. K.↗

A comparative study of clock rate and drift estimation

Five different methods of drift determination and four different methods of rate determination were compared using months of hourly phase and frequency data from a sample of cesium clocks and active hydrogen masers. Linear least squares on frequency is selected as the optimal method of determining both drift and rate, more on the basis of parameter parsimony and confidence measures than on random and systematic errors.

Breakiron, Lee A.↗

Comparative Study of Three High Order Schemes for LES of Temporally Evolving Mixing Layers

Three high order shock-capturing schemes are compared for large eddy simulations (LES) of temporally evolving mixing layers (TML) for different convective Mach numbers (Mc) ranging from the quasi-incompressible regime to highly compressible supersonic regime. The considered high order schemes are fifth-order WENO (WENO5), seventh-order WENO (WENO7) and the associated eighth-order central spatial base scheme with the dissipative portion of WENO7 as a nonlinear post-processing filter step (WENO7fi). This high order nonlinear filter method (H.C. Yee and B. Sjogreen, Proceedings of ICOSAHOM09, June 22-26, 2009, Trondheim, Norway) is designed for accurate and efficient simulations of shock-free compressible turbulence, turbulence with shocklets and turbulence with strong shocks with minimum tuning of scheme parameters. The LES results by WENO7fi using the same scheme parameter agree well with experimental results of Barone et al. (2006), and published direct numerical simulations (DNS) work of Rogers & Moser (1994) and Pantano & Sarkar (2002), whereas results by WENO5 and WENO7 compare poorly with experimental data and DNS computations.

Yee, Helen M. C.↗

A comparative study on magnetism in Zn-doped AlN and GaN from first-principles

First-principles calculations have been used to comparatively investigate electronic and magnetic properties of Zn-doped AlN and GaN. A total magnetic moment of 1.0 μ B {sub B} induced by Zn is found in AlN, but not in GaN. Analyses show that the origin of spontaneous polarization not only depend on the localized atomic orbitals of N and sufficient hole concentration, but also the relative intensity of the covalency of matrix. The relatively stronger covalent character of GaN with respect to AlN impedes forming local magnetic moment in GaN matrix. Our study offers a fresh sight of spontaneous spin polarization in d⁰ magnetism. The much stronger ferromagnetic coupling in c-plane of AlN means that it is feasible to realize long-range ferromagnetic order via monolayer delta-doping. This can apply to other wide band-gap semiconductors in wurtzite structure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

A comparative study on the environmental impact of supermarket refrigeration systems using low GWP refrigerants

Supermarket refrigeration systems have high environmental impact due to their large refrigerant charge and high leak rates. Consequently, the interest in using low GWP refrigerants such as carbon dioxide (CO 2 ) and new refrigerant blends is increasing. In this study, an open-source Life Cycle Climate Performance (LCCP) framework is presented and used to compare the environmental impact of four supermarket refrigeration systems: a transcritical CO 2 booster system, a cascade CO 2 /N-40 system, a combined secondary circuit with central DX N-40/L-40 system, and a baseline multiplex direct expansion system utilizing R-404A and N-40. The study is performed for different climates within the USA using EnergyPlus to simulate the systems' hourly performance. Finally, further analyses are presented such as parametric, sensitivity, and uncertainty analyses to study the impact of different system parameters on the LCCP.

54 ENVIRONMENTAL SCIENCES↗

Comparative study of flux pinning flux creep and critical currents between YBaCuO crystals with and without Y2BaCuO5 inclusions

In the Y-Ba-Cu-O system YBa2Cu3Ox phase is produced by the following peritectic reaction: Y2BaCuO5 + liquid yields 2YBa2Cu3Ox. Through the control of processing conditions and starting compositions it becomes possible to fabricate large crystals containing fine Y2BaCuO5(211) inclusions. Such crystals exhibit Jc values exceeding 10000 A/sq cm at 77 K and 1T. Recently, researchers developed a novel process which can control the volume fraction of 211 inclusions. Elimination of 211 inclusions is also possible. In this study, researchers prepared YBaCuO crystals with and without 211 inclusions using the novel process and compared flux pinning, flux creep and critical currents. Magnetic field dependence of Jc for YBaCuO crystals with and without 211 inclusions is shown. It is clear that fine 211 inclusions can contribute to flux pinning. It was also found that flux creep rate could be reduced by increasing flux pinning force. Critical current density estimates based on the conventional flux pinning theory were in good agreement with experimental results.

Murakami, Masato↗

Comparative study of flux pinning, creep and critical currents between YBaCuO crystals with and without Y2BaCuO5 inclusions

In the Y-Ba-Cu-O system, YBa2Cu3O(x) phase is produced by the following peritectic reaction: Y2BaCuO5 + liquid yields 2YBa2Cu3O(x). Through the control of processing conditions and starting compositions, it becomes possible to fabricate large crystals containing fine Y2BaCuO5(211) inclusions. Such crystals exhibit Jc values exceeding 10000 A/sq cm at 77 K and 1T. Recently, researchers developed a novel process which can control the volume fraction of 211 inclusions. Elimination of 211 inclusions is also possible. In this study, researchers prepared YBaCuO crystals with and without 211 inclusions using the novel process, and compared flux pinning, flux creep and critical currents. Magnetic field dependence of Jc for YBaCuO crystals with and with 211 inclusions is shown. It is clear that fine 211 inclusions can contribute to flux pinning. It was also found that flux creep rate could be reduced by increasing flux pinning force. Critical current density estimates based on the conventional flux pinning theory were in good agreement with experimental results.

Murakami, Masato↗

A comparative study: Effect of plasma on V{sub 2}O{sub 5} nanostructured thin films

Vanadium pentoxide nanostructured thin films (NSTs) have been studied to analyze the effect of plasma on nanostructures grown and morphology of films deposited using sublimation process. Nanostructured thin films were deposited on glass substrates, one in presence of oxygen plasma and other in oxygen environment (absence of plasma). Films were characterized using XRD, Raman spectroscopy, SEM and HRTEM. XRD studies revealed α-V{sub 2}O{sub 5} films (orthorhombic phase) with good crystallinity. However, film deposited in presence of plasma have higher peak intensities as compared to those deposited in absence of plasma. Raman studies also support these finding following same trends of considerable increase in intensity in case of film deposited in presence of plasma. SEM micrographs makes the difference more visible, as film deposited in plasma have well defined plate like structures whereas other film have not-clearly-defined petal-like structures. HRTEM results show orthorhombic phase with 0.39 nm interplanar spacing, as reported by XRD. Results are hereby in good agreement with each other.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Comparative study of INPIStron and spark gap

An inverse pinch plasma switch, INPIStron, was studied in comparison to a conventional spark gap. The INPIStron is under development for high power switching applications. The INPIStron has an inverse pinch dynamics, opposed to Z-pinch dynamics in the spark gap. The electrical, plasma dynamics and radiative properties of the closing plasmas have been studied. Recently the high-voltage pulse transfer capabilities or both the INPIStron and the spark gap were also compared. The INPIStron with a low impedance Z = 9 ohms transfers 87 percent of an input pulse with a halfwidth of 2 mu s. For the same input pulse the spark gap of Z = 100 ohms transfers 68 percent. Fast framing and streak photography, taken with an TRW image converter camera, was used to observe the discharge uniformity and closing plasma speed in both switches. In order to assess the effects of closing plasmas on erosion of electrode material, emission spectra of two switches were studied with a spectrometer-optical multi channel analyzer (OMA) system. The typical emission spectra of the closing plasmas in the INPIStron and the spark gap showed that there were comparatively weak carbon line emission in 658.7 nm and copper (electrode material) line emissions in the INPIStron, indicating low erosion of materials in the INPIStron.

Han, Kwang S.↗

A comparative study of electronic and structural properties of polycrystalline and epitaxial magnetron-sputtered ZnO:Al and Zn{sub 1-x}Mg{sub x}O:Al Films—Origin of the grain barrier traps

Homoepitaxial and heteroepitaxial ZnO, ZnO:Al, and Zn{sub 1-x}Mg{sub x}O:Al films have been grown by magnetron sputtering from ceramic targets at substrate temperatures between 200 °C and 500 °C. We studied the relation between the electronic transport and structural properties for the epitaxially grown films and compared it to the properties of polycrystalline films by means of X-ray diffraction, transmission electron microscopy and optical reflectance and transmittance measurements. The results show that the epitaxial growth of ZnO:Al and Zn{sub 1-x}Mg{sub x}O:Al thin films, which has been observed for nearly all films prepared on single crystalline substrates, will not significantly improve the electronic transport properties in comparison to polycrystalline films unless the grain boundaries are eliminated completely. The grain boundary defect densities of about 3 × 10{sup 13} cm{sup −2} are nearly independent on the structural quality of the different polycrystalline, hetero- and homoepitaxial films. This clearly proves that the grain boundary defects are not caused by crystallographic defects, but, most probably, by the dopant aluminium.

36 MATERIALS SCIENCE↗

A comparative study of nonreflecting far-field boundary condition procedures for unsteady transonic flow computation

Various nonreflecting far-field boundary condition procedures are compared by implementing them in the computer code LTRAN2. This code solves the implicit finite-difference representation of the small-disturbance equations for transonic flows about airfoils. The first- and second-approximate nonreflecting conditions, as proposed by Engquist and Majda, are compared with the condition derived from the full-characteristic equation. The far-field boundary conditions and the description of the algorithm for implementing these conditions in LTRAN2 are discussed. Various cases are computed and compared with results from the older, more conventional procedures. One concludes that the full-characteristic equation produces the most effective results, thus allowing the far-field boundary to be located closer to the airfoil; this decreases the computer time required to obtain the solution because fewer mesh points are required.

Kwak, D.↗

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗

Comparative study of bolometric and non-bolometric switching elements for microwave phase shifters

The performance of semiconductor and high critical temperature superconductor switches is compared as they are used in delay-line-type microwave and millimeter-wave phase shifters. Such factors as their ratios of the off-to-on resistances, parasitic reactances, power consumption, speed, input-to-output isolation, ease of fabrication, and physical dimensions are compared. Owing to their almost infinite off-to-on resistance ratio and excellent input-to-output isolation, bolometric superconducting switches appear to be quite suitable for use in microwave phase shifters; their only drawbacks are their speed and size. The SUPERFET, a novel device whose operation is based on the electric field effect in high critical temperature ceramic superconductors is also discussed. Preliminary results indicate that the SUPERFET is fast and that it can be scaled; therefore, it can be fabricated with dimensions comparable to semiconductor field-effect transistors.

Tabib-Azar, Massood↗

Comparative study of GaN mesa etch characteristics in Cl{sub 2} based inductively coupled plasma with Ar and BCl{sub 3} as additive gases

GaN thin film etching is investigated and compared for mesa formation in inductively coupled plasma (ICP) of Cl{sub 2} with Ar and BCl{sub 3} gas additives using photoresist mask. Etch characteristics are studied as a function of ICP process parameters, viz., ICP power, radio frequency (RF) power, and chamber pressure at fixed total flow rate. The etch rate at each ICP/RF power is 0.1–0.2 μm/min higher for Cl{sub 2}/Ar mixture mainly due to higher Cl dissociation efficiency of Ar additive that readily provides Cl ion/radical for reaction in comparison to Cl{sub 2}/BCl{sub 3} mixture. Cl{sub 2}/Ar mixture also leads to better photoresist mask selectivity. The etch-induced roughness is investigated using atomic force microscopy. Cl{sub 2}/Ar etching has resulted in lower root-mean-square roughness of GaN etched surface in comparison to Cl{sub 2}/BCl{sub 3} etching due to increased Ar ion energy and flux with ICP/RF power that enhances the sputter removal of etch product. The GaN surface damage after etching is also evaluated using room temperature photoluminescence and found to be increasing with ICP/RF power for both the etch chemistries with higher degree of damage in Cl{sub 2}/BCl{sub 3} etching under same condition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Comparative study of Cs,O coadsorption on Ga{sub 0.75}Al{sub 0.25}N (0001) and (001) surfaces

Based on first principle calculations, we carried out comparative research of Cs,O coadsorption on Ga{sub 0.75}Al{sub 0.25}N (0001) surface and Ga{sub 0.75}Al{sub 0.25}N (001) (2 × 2) reconstruction surface. On the (0001) surface, the average coordinate difference between Cs and O atoms along [0001] direction is obviously smaller than that along [001] direction on (001) (2 × 2) reconstruction surface. This is due to the existence of dimers and trenches on the (001) (2 × 2) reconstruction surface. Cs atoms are favored to locate on the dimers while O atoms are favored to locate in the trenches. As a result, Cs–O dipoles on (001) (2 × 2) reconstruction surface make an important contribution on lowering work function. For both (0001) and (001) (2 × 2) reconstruction surface, work function values fluctuate up and down at the stage of Cs,O alternative adsorption, and the valley values are smaller and smaller. The site of Mg dopant has an influence on work function of the surfaces, which results in the “fish scale field” effect.

77 NANOSCIENCE AND NANOTECHNOLOGY↗