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At least 217 records · Page 12

Magnetic glassiness in noncentrosymmetric Sm 7 Pd 3 : Interplay of magnetic frustration, long-range order, and frozen domains

Here, we present a comprehensive investigation of the intricate spin dynamics in the noncentrosymmetric compound Sm 7 ⁢Pd 3 , revealing the coexistence of spin-glass, domain-glass, and ferromagnetic (FM) behaviors. Magnetic field-dependent measurements indicate large coercivity, suggesting ferromagnetic domain formation below the Curie temperature (𝑇 C ≈ 173 K), while temperature-dependent magnetization data point to antiferromagnetic (AFM) coupling, highlighting the competition between FM and AFM interactions. Detailed ac susceptibility, isothermal remanent magnetization, and aging effect measurements demonstrate the presence of two distinct types of glassiness in the sample, and their possible origins are discussed extensively. Magnetization measurements reveal the mixing of the 𝐽 = 5/2 ground state of Sm 3+ with the excited 𝐽 = 7/2 multiplet, lying 965 K above. The specific heat data show further crystalline electric field splitting of the 𝐽 = 5/2 state into a ground-state doublet and a fourfold-degenerate excited state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic Weyl Semimetallic Phase in Thin Films of Eu 2 Ir 2 O 7

The interplay between electronic interactions and strong spin-orbit coupling is expected to create a plethora of fascinating correlated topological states of quantum matter. Of particular interest are magnetic Weyl semimetals originally proposed in the pyrochlore iridates, which are only expected to reveal their topological nature in thin film form. To date, however, direct experimental demonstrations of these exotic phases remain elusive, due to the lack of usable single crystals and the insufficient quality of available films. Here, in this study, we report on the discovery of signatures for the long-sought magnetic Weyl semimetallic phase in (111)-oriented Eu 2 Ir 2 O 7 high-quality epitaxial thin films. We observed an intrinsic anomalous Hall effect with colossal coercivity but vanishing net magnetization, which emerges right below the onset of a peculiar magnetic phase with all-in-all-out (AIAO) antiferromagnetic ordering. The anomalous Hall conductivity obtained experimentally is consistent with the theoretical prediction, likely arising from the nonzero Berry curvature emanated by Weyl node pairs near the Fermi level that act as sources and sinks of Berry flux, activated by broken cubic crystal symmetry at the top and bottom terminations of the thin film.

36 MATERIALS SCIENCE↗

Domain Wall Reactions in Multiple-Order Parameter Ferroelectrics

The motion of domain walls is crucial for ferroelectric switching. Conventionally, the switching dynamics is believed to be determined by the motion of one or a few low-energy domain wall types of dominant population. Here, we challenge this conventional idea in multiple-order-parameter ferroelectrics. Using hafnia as example, we show that the multiple-order-parameter nature not only provides various mobile domain walls and defectlike immobile domain walls, but also enables the domain wall reactions. In analogy with chemical reactions where substances react to form new substances, domain walls could also react to form other domain walls during switching. We identify several elementary domain wall reaction types including synthesis, decomposition, and exchange reactions. Domain walls are continually changed by these reactions during switching so that the switching behavior reflects the statistical average of many domain wall types with distinct mobility and stability. These reactions also lead to phenomenon like remanent nuclei and defect-site nucleation that facilitate switching and lower coercive field. Finally, the concept of domain wall reaction is not limited to hafnia but can be generalized to any multiple-order-parameter ferroelectric. As a result, this Letter conceptualizes domain wall reaction, expands the theory of ferroelectric switching, and suggests a practical way for defect engineering to control switching behavior.

36 MATERIALS SCIENCE↗

Ferroelectricity in boron-substituted aluminum nitride thin films

This manuscript demonstrates ferroelectricity in B-substituted AlN thin films and a complementary set of first-principles calculations to understand their structure-property relationships. Al 1–x B x N films are grown by dual-cathode reactive magnetron sputtering on (110)W/(001)Al 2 O 3 substrates at 300°C at compositions spanning x = 0 to x = 0.20. X-ray diffraction studies indicate a decrease in both the c and a lattice parameters with increasing B concentration, resulting in a decrease in unit cell volume and a constant c/a axial ratio of 1.60 over this composition range. Films with 0.02 ≤ x ≤ 0.15 display ferroelectric switching with remanent polarizations exceeding 125 μCcm –2 while maintaining band gap energies of > 5.2eV. The large band gap allows low frequency hysteresis measurement (200 Hz) with modest leakage contributions. At B concentrations of x > 0.15, c-axis orientation deteriorates and ferroelectric behavior is degraded. Furthermore, density-functional theory calculations corroborate the structural observations and provide predictions for the wurtzite u parameter, polarization reversal magnitudes, and composition-dependent coercive fields.

36 MATERIALS SCIENCE↗

Understanding magnetic phase coexistence in Ru 2 Mn 1-x Fe x Sn Heusler alloys: A neutron scattering, thermodynamic, and phenomenological analysis

The random substitutional solid solution between the antiferromagnetic (AFM) full-Heusler alloy Ru 2 MnSn and the ferromagnetic (FM) full-Heusler alloy Ru 2 FeSn provides a rare opportunity to study FM-AFM phase competition in a near-lattice-matched, cubic system, with full solubility. At intermediate x in Ru 2 Mn 1-x Fe x Sn this system displays suppressed magnetic ordering temperatures, spatially coexisting FM and AFM order, and strong coercivity enhancement, despite rigorous chemical homogeneity. Here, we construct the most detailed temperature- and x-dependent understanding of the magnetic phase competition and coexistence in this system to date, combining wide-temperature-range neutron diffraction and small-angle neutron scattering with magnetometry and specific heat measurements on thoroughly characterized polycrystals. A complete magnetic phase diagram is generated, showing FM-AFM coexistence between x ≈ 0.30 and x ≈ 0.70. Furthermore, important insight is gained from the extracted length scales for magnetic phase coexistence (25–100 nm), the relative magnetic volume fractions and ordering temperatures, and remarkable x-dependent trends in magnetic and electronic contributions to specific heat. An unusual feature in the magnetic phase diagram (an intermediate FM phase) is also shown to arise from an extrinsic effect related to a minor Ru-rich secondary phase. The established magnetic phase diagram is then discussed with the aid of phenomenological modeling, clarifying the nature of the mesoscale phase coexistence with respect to the understanding of disordered Heisenberg models.

36 MATERIALS SCIENCE↗

Control of ternary alloy composition during remote epitaxy on graphene

Understanding the sticking coefficient σ, i.e., the probability of an adatom sticking to a surface, is essential for controlling the stoichiometry during epitaxial film growth. However, σ on monolayer graphene-covered surfaces and its impact on remote epitaxy are not understood. Here, using molecular-beam epitaxial growth of the magnetic shape memory alloy Ni 2 MnGa, we show that the sticking coefficients for metals on graphene-covered MgO (001) are less than one and are temperature and element dependent, as revealed by ion backscattering spectrometry and energy-dispersive x-ray spectroscopy. This lies in stark contrast with most transition metals sticking on semiconductor and oxide substrates, for which σ is near unity at typical growth temperatures (T < 800°C). By initiating growth below 400°C, where the sticking coefficients are closer to unity and wetting on the graphene surface is improved, we demonstrate the epitaxy of Ni 2 MnGa films with controlled stoichiometry that can be exfoliated to produce freestanding membranes. Straining these membranes tunes the magnetic coercive field. Finally, our results provide a route to synthesize membranes with complex stoichiometries whose properties can be manipulated via strain.

36 MATERIALS SCIENCE↗

Antiferromagnetic V 2 ⁢O 3 based exchange coupling

Vanadium sesquioxide (V 2 ⁢O 3 ) is a strongly correlated electronic material that famously undergoes a triple coupled first-order transition where it transitions from a paramagnetic metal with a rhombohedral structure at high temperature to an antiferromagnetic insulator with a monoclinic structure. While several studies have used one of both electronic and structural transitions to control the properties of a heterostructure, evidence of magnetic coupling has notoriously yet to be found. In this paper, we report on a robust magnetic coupling between the antiferromagnetic (AFM) V 2 ⁢O 3 and ferromagnetic (FM) Permalloy (Py) layers that results in a significant exchange bias and strain-induced coercivity enhancement. We provide a temperature and angle-dependent study of magnetic properties, which clearly indicates exchange bias at the AFM/FM interface that appears at the onset of the metal-insulator transition. The magnitude of the exchange bias is strongest when the field is applied along the [001] V 2 ⁢O 3 crystallographic orientation which corresponds to an AFM spin configuration on the [110] surface. Here, this opens the door to designing and implementing novel functionalities in transition metal oxide-based computing using the connection between magnetism and the metal-insulator transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Machine learning-accelerated discovery of iron cobalt phosphides as rare-earth-free magnets

Here, the discovery of rare-earth-free permanent magnets has been a goal of scientists for decades. The absence of rare-earth elements will alleviate a pressing concern about the availability of rare-earth elements used in permanent magnets. These magnets are crucial for applications such as wind turbines, electric cars, and memory devices. Rare-earth magnets are special owing to a large magnetic anisotropy energy (K 1 ). In contrast, iron cobalt phosphides hold promise since doping P into cubic FeCo can induce anisotropy, leading to a large coercivity, without introducing rare-earth elements. We present a comprehensive search over the Fe-Co-P ternary space for magnets, utilizing recently developed adaptive machine learning feedback to efficiently screen over 850 000 structures. We focus on machine learning acceleration as a paradigm for materials design. Further adaptive genetic algorithm searches and first-principles calculations aid in the identification of 16 new structures below the known convex hull. Five of them possess high magnetic polarization (J s > 1 T). The structures with desirable magnetic properties center on (Fe,Co) 2⁢ P. This supports conventional wisdom, which focuses on the mixture of the two known end compounds: Fe 2 ⁢P and Co 2 ⁢P. Our work provides guidance for synthesis. We find Fe 7 ⁢CoP 4 shows the most promise (J s = 1.03T and K 1 = 0.83MJ/m 3 ).

36 MATERIALS SCIENCE↗

Type-II Weyl nodes, flat bands, and evidence for a topological Hall-effect in the new ferromagnet FeCr 3 Te 6

The interplay between linearly dispersing, or Dirac-like, and flat electronic bands, for instance, in the kagome ferromagnets, has attracted attention due to a possible interplay between topology and electronic correlations. Here, we report the synthesis, structural, electrical, and magnetic properties of a single-crystalline ferromagnetic compound, namely Fe 1/3 ⁢CrTe 2 or FeCr 3 ⁢Te 6 , which crystallizes in the 𝑃$\overline{3}$⁢𝑚⁢1 space group instead of the 𝐼⁢2/𝑚 previously reported for FeCr 2 ⁢Te 4 . Electronic band structure calculations reveal type-II Dirac nodes and relatively flat bands near the Fermi level (ε 𝐹 ). This compound shows onset Curie temperature 𝑇 c ≃ 120K, followed by an additional ferromagnetic transition near 𝑇 c2 ∼ 92.5K. Below 𝑇 c , FeCr 3 ⁢Te 6 displays a pronounced anomalous Hall effect, as well as sizable coercive fields that exceed 𝜇 0 ⁢𝐻=1 T at low 𝑇⁢s. However, a scaling analysis indicates that the anomalous Hall effect results from a significant intrinsic contribution, as expected from the calculations, and also from the extrinsic mechanism, i.e., scattering. The extrinsic contribution probably results from occupational disorder at the 1b Fe-site within the van der Waals gap of the CrTe 2 host. We also observe evidence for a topological Hall component superimposed onto the overall Hall response, suggesting the presence of chiral spin textures akin to skyrmions in this centrosymmetric system. Their possible presence will require experimental confirmation.

36 MATERIALS SCIENCE↗

Tip-based proximity ferroelectric switching and piezoelectric response in wurtzite multilayers

Proximity ferroelectricity is a paradigm for inducing ferroelectricity when a nonferroelectric polar material (such as Al⁢ N), which is unswitchable with an external field below the dielectric breakdown field, becomes a practically switchable ferroelectric in direct contact with a thin switchable ferroelectric layer (such as Al 1−𝑥 ⁢Sc 𝑥 ⁢N). Here, we develop a Landau-Ginzburg-Devonshire approach to study the proximity effect of local piezoelectric response and polarization reversal in wurtzite ferroelectric multilayers under a sharp electrically biased tip. Using finite-element modeling, we analyze the probe-induced nucleation of nanodomains, the features of local polarization hysteresis loops and coercive fields in the Al 1−𝑥 ⁢Sc 𝑥 ⁢N/Al⁢ N bilayers and three-layers. Similar to the wurtzite multilayers sandwiched between two parallel electrodes, the regimes of “proximity switching” (when all layers collectively switch) and the regime of “proximity suppression” (when they collectively do not switch) are the only two possible regimes in the probe-electrode geometry. However, the parameters and asymmetry of the local piezoresponse and polarization hysteresis loops depend significantly on the sequence of the layers with respect to the probe. The physical mechanism of proximity ferroelectricity in the local probe geometry is a depolarizing electric field determined by the polarization of the layers and their relative thickness. The field, whose direction is opposite to the polarization vector in the layer(s) with the larger spontaneous polarization (such as Al⁢ N), renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier in the “otherwise unswitchable” polar layers. Tip-based control of domains in otherwise nonferroelectric layers using proximity ferroelectricity can provide nanoscale control of domain reversal in memory, actuation, sensing, and optical applications. The ability of the tip-induced proximity switching to differentially switch multilayers, based on the order of the layers, provides a powerful tool for selective domain engineering.

36 MATERIALS SCIENCE↗

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗

Interpretable machine learning-guided design of Fe-based soft magnetic alloys

Here, we present a machine learning (ML) guided approach to predict saturation magnetization (𝑀 S ) and coercivity (𝐻 C ) in Fe-rich soft magnetic alloys, particularly Fe-Si-B systems. ML models trained on experimental data reveal that increasing Si and B content reduces 𝑀 S from 1.81 T (DFT ≈ 2.04 T) to ≈1.54 T (DFT ≈ 1.56T) in Fe-Si-B, which is attributed to decreased magnetic density and structural modifications. Experimental validation of ML predicted magnetic saturation on Fe-1Si-1B (2.09 T), Fe-5Si-5B (2.01 T), and Fe-10Si-10B (1.54 T) alloy compositions further supports our findings. These trends are consistent with density functional theory predictions, which link increased electronic disorder and band broadening to lower 𝑀 S values. Experimental validation on selected alloys confirms the predictive accuracy of the ML model, with good agreement across compositions. Beyond predictive accuracy, detailed uncertainty quantification and model interpretability including through feature importance and partial dependence analysis reveal that 𝑀 S is governed by a nonlinear interplay between Fe content and early transition metal ratios, while 𝐻 C is more sensitive to processing conditions such as ribbon thickness and thermal treatment windows. The ML framework was further applied to Fe-Si-B/Cr/Cu/Zr/Nb alloys in a pseudoquaternary compositional space, which shows comparable magnetic properties to NANOMET (Fe 84.8 ⁢Si 0.5 ⁢B 9.4 ⁢Cu 0.8⁢ P 3.5 ⁢C 1 ), FINEMET (Fe 73.5 ⁢Si 13.5 ⁢B 9 Cu 1 ⁢Nb 3 ), NANOPERM (Fe 88 ⁢Zr 7⁢ B 4 ⁢Cu 1 ), and HITPERM (Fe 44 ⁢Co 44 ⁢Zr 7⁢ B 4 ⁢Cu 1 . Our findings demonstrate the potential of the ML framework for accelerated search of high-performance soft magnetic materials.

density functional theory↗

Impact of Random Spatial Fluctuation in Non-Uniform Crystalline Phases on the Device Variation of Ferroelectric FET

In this work, a comprehensive study of random spatial fluctuation of the ferroelectric (FE) phase and dielectric (DE) phase in FeFETs is conducted to understand its impact on device variation. It is found that: i) there exists a certain DE percentage threshold that below which the increase of the DE phase does not significantly impact the device memory window and variation and only above which evident device degradation can be observed; ii) increasing the DE phase increases the variation in the memory window and the coercive field distribution further exacerbates the variation, hence degrading the sensing margin; iii) decreasing the number of grains degrades the device variation, which calls for further grain size engineering for variation suppression.

42 ENGINEERING↗

Effect of processing hydrogen pressure on magnetic properties of HDDR Nd-Fe-B magnet

High coercivity and anisotropic Nd-Fe-B powders for making anisotropic bonded magnets have been prepared by hydrogenation-disproportionation-desorption-recombination (HDDR). In this work, we found that the processing hydrogen pressure is intimately correlated with the formation of c-axis crystal texture of Nd 2 Fe 14 B phase. There exists a critical hydrogen pressure, P crit , during hydrogen-disproportionation stage, that promotes the formation of c-axis crystal texture. When processing hydrogen pressure is higher than P crit , the formation of c-axis texture deteriorates and results in isotropic Nd-Fe-B magnetic powders. The existence of P crit is ascribed to the thermodynamics and kinetics origin during HDDR process.

36 MATERIALS SCIENCE↗

Theoretical Correlation of Elemental Distribution of Nd and Pr in Ce-Fe-B Microstructure With Hard Magnetic Properties

Relatively resource-rich but property inferior-Ce-Fe-B magnet can be improved by partial replacement of Ce by Nd and/or Pr. In addition to the amount of Nd/Pr, their distribution profile in microstructure plays an important role. From our first principles density functional theory (DFT) calculation, the substitution energy of Ce by Pr/Nd is negative in Ce 2 Fe 14 B (2:14:1) while that for laves phase, CeFe 2 is positive, implying that Nd/Pr stabilize 2:14:1 and suppress the formation of the CeFe 2 phase. Further, micromagnetic simulation indicates that homogenized distribution of Nd/Pr improves squareness of demagnetization curve, while core (Ce-rich)-shell (Nd/Pr-rich) 2:14:1 grain structure enhances coercivity. Magnetic properties of Ce-Fe-B can be optimized by manipulating distribution profile of chemical element in microstructure based on their subtle difference in thermodynamic property, which is an effective pathway to design optimized chemical composition and processing route for high-performance magnet.

36 MATERIALS SCIENCE↗

Modeling of Magnetic Properties of Magnetorheological Elastomers Using JA Hysteresis Model

Magnetorheological elastomers (MREs) are composite materials that consist of magnetically permeable particles in a nonmagnetic polymeric matrix. Under the influence of an external magnetic field, a reversible deformation change occurs in the mechanical properties of these materials. Due to their coupled magnetomechanical response, these materials have been found suitable for a range of applications including tunable vibration absorbers, sensors, and actuators. Notably, improvement of such devices are prerequisites to efficient energy conversion systems, hence the need to understand further the MRE technology. The Jiles-Atherton (JA) theory takes into consideration the magneto-coupling experienced by effective domains in a magnetic material. Algorithm based on the theory yields five model parameters; saturation magnetization (M s ), domain density (a), domain coupling (α), loss coefficient (k), and reversibility (c). Using JA theory, model parameters were calculated and linked to the physical attributes of Fe powder and isotropic MRE. The results show that the calculated Ms for the MRE is reasonably related to that of the Fe powder by a factor of the particle's volume fraction used in the MRE. Further, the calculated k, a, and α provided support for the reduced pinning factor, domain density, and increased domain coupling in the MRE due to the changes in the domain structure between the two materials. From the calculated JA parameters, finite-element modeling (FEM) of the MRE hysteresis loop was performed. The analysis showed that the modeled magnetic properties including coercivity, remanence, and coordinates of the hysteresis loop tip vary with geometric position.

42 ENGINEERING↗

Heavy-ion-induced displacement damage effects in magnetic tunnel junctions with perpendicular anisotropy

Here, we evaluate the resilience of CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy to displacement damage induced by heavy ion irradiation. MTJs were exposed to 3 MeV Ta 2+ ions at different levels of ion beam fluence spanning five orders of magnitude. The devices remained insensitive to beam fluences up to 10 11 ions/cm 2 , beyond which a gradual degradation in the device magnetoresistance, coercive magnetic field, and spin-transfer-torque switching voltage were observed, ending with a complete loss of magnetoresistance at very high levels of displacement damage (>0.035 displacements per atom). The loss of magnetoresistance is attributed to structural damage at the MgO interfaces, which allows electrons to scatter among the propagating modes within the tunnel barrier and reduces the net spin polarization. Ion-induced damage to the interface also reduces the perpendicular magnetic anisotropy. This study clarifies the displacement damage thresholds that lead to significant irreversible changes in the characteristics of spin-transfer-torque magnetic random access memory (STT-MRAM) and elucidates the physical mechanisms underlying the deterioration in device properties.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Atomic-Scale Imaging of Polarization Switching in an (Anti-)Ferroelectric Memory Material: Zirconia (ZrO2)

Direct, atomic-scale visualization of polarization switching in a functional, polycrystalline, binary oxide via in-situ high-resolution transmission electron microscopy (HRTEM) biasing is reported for the first time. Antiferroelectric (AFE) ZrO2 was used as the model system, which is important for commercial DRAMs and as emerging NVMs (through work-function engineering). We observed (1) clear shifting and coalescing of domains within a single grain, and (2) dramatic changes of the atomic arrangements and crystalline phases—both at voltages above the critical voltage measured for AFE switching. Similar synergistic in-situ structural-electrical characterization can pave the way to understand and engineer microscopic mechanisms for retention, fatigue, variability, sub-coercive switching and analog states in ferroelectric and AFE-based memory devices.

Lombardo, Sarah↗