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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Results of the Air Force high efficiency cascaded multiple bandgap solar cell programs

The III-V semiconductor materials system that was selected for continued cascade cell development was the AlGaAs cell on GaAs cell structure. The tunnel junction used as transparent ohmic contact between the top cell and the bottom cell continued to be the central difficulty in achieving the program objective of 25 percent AMO efficiency at 25 C. During the tunnel junction and top cell developments it became apparent that the AlGaAs cell has potential for independent development as a single junction converter and is a logical extension of the present GaAs heteroface technology.

Rahilly, W. P.↗
NASA NTRS1980

Fabrication of AlGaAs/GaAs cascade solar cell by LPE

Stacking two or more photovoltaic junctions in electrical and optical series results in higher conversion efficiency since each junction can be tailored to respond more efficiently to a smaller range of photon energies. An efficiency of about 30 percent was predicted for a two junction cascade cell having the optimum bandgap values. A number of III-V materials systems were considered for use in fabricating cascade solar cells. The Al-Ga-As system is attractive from a developmental standpoint since it employs a proven materials system that is closely lattice matched throughout its compositional range. This system employs a GaAs low bandgap cell and 1.9 eV AlGaAs high bandgap cell connected by an AlGaAs tunnel junction. Although this cell does not possess the optimum bandgap values, an efficiency of 25 percent was predicted at 300 K under AMO, 1 sun illumination.

Bedair, S. M.↗
NASA NTRS1980

Cascade Solar Cell Workshop report

Issues related to the feasibility, research and development, and demonstration of a 30% AMO cascade solar cell discussed include the material selection, growth and fabrication techniques, and device development strategy for a monolithic (two terminal) cascade cell, a hybrid (four terminal) cascade cell, and a spectral splitting device (three cells). Workshop recommendations include: (1) initiate a long range research program to develop a three junction, monolithic, cascade cell using either AlGaAsSb-GaAsSb or AlGaInAs-GaInAs material system; (2) emphasize OM-CVD epitaxial growth technique, perhaps combined with other technologies in the near term to obtain tunnel junctions; (3) develop a two junction device first; (4) initiate a cascade solar cell modeling program to study and compare performance of two and four terminal cascade devices exposed to electron and proton irradiation; and (5) encourage and be open to new ideas for developing four terminal, hybrid, cascade cells exploiting novel component cell interconnect technologies.

Hutchby, J. A.↗
NASA NTRS1980

The HEWAC pilot line experience

Advanced silicon solar cells with both electrical contacts on the back side of the cell are described. These high efficiency wrap around contact solar cells (HEWACS) utilize a screen printed dielectric insulation layer to isolate the 'n' and 'p' contacts from each other. Development of a device exhibiting high AMO conversion efficiencies is addressed along with the processing of such cells to a point where cell fabrication can be carried out by production personnel under operating production line conditions.

Gillanders, M.↗
NASA NTRS1980

Design requirements for high-efficiency high concentration ratio space solar cells

A miniaturized Cassegrainian concentrator system concept was developed for low cost, multikilowatt space solar arrays. The system imposes some requirements on solar cells which are new and different from those imposed for conventional applications. The solar cells require a circular active area of approximately 4 mm in diameter. High reliability contacts are required on both front and back surfaces. The back area must be metallurgically bonded to a heat sink. The cell should be designed to achieve the highest practical efficiency at 100 AMO suns and at 80 C. The cell design must minimize losses due to nonuniform illumination intensity and nonnormal light incidence. The primary radiation concern is the omnidirectional proton environment.

Rauschenbach, H.↗
NASA NTRS1981

Pilot production and testing of high efficiency wraparound contact solar cells

Modifications were made to the process sequence until a device capable of high performance and satisfactory processing yields could be fabricated on a production line. Pilot production resulted in a 2 x 4 cm screen printed dielectric wraparound contact solar cell with average 28 C, Air Mass Zero (AMO) conversion efficiencies of 14.2% and reasonable process yields. This high performance was obtained with two different back contact configurations, making the device acceptable for many applications.

Gillanders, M.↗
NASA NTRS1980

High efficiency wraparound contact solar cells /HEWACS/

A cell technology, producing high efficiency wrap-around contact solar cells (HEWACS), with both electrical contacts on the back and AMO conversion efficiencies of almost 15%, is presented. A flow chart indicating the baseline process sequence along with the process changes is given. Tests checking for coating delamination and contact integrity, those measuring contact strength, and thermal cycle tests, successfully demonstrated that this cell technology is ready to be moved to the pilot production stage.

Gillanders, M.↗
NASA NTRS1980

Epitaxial and polycrystalline GaAs solar cells using OM-CVD techniques

GaAs epitaxial films were grown by chemical vapor deposition using organo-metallic sources (OM-CVD) on single crystal and polycrystalline bulk GaAs, as well as on bulk polycrystalline and recrystallized thin-film Ge substrates. Details of Antireflecting Metal-Oxide-Semiconductor (AMOS) solar cells fabricated on GaAs films grown on bulk polycrystalline Ge and recrystallized Ge thin-film substrates will be discussed, as well as preliminary photovoltaic results obtained for n(+)/p homojunction structures.

Yeh, Y. C. M.↗
NASA NTRS1981

GaAs shallow-homojunction solar cells

The feasibility of fabricating space resistant, high efficiency, light weight, low cost GaAs shallow homojunction solar cells for space application is investigated. The material preparation of ultrathin GaAs single crystal layers, and the fabrication of efficient GaAs solar cells on bulk GaAs substrates are discussed. Considerable progress was made in both areas, and conversion efficiency about 16% AMO was obtained using anodic oxide as a single layer antireflection coating. A computer design shows that even better cells can be obtained with double layer antireflection coating. Ultrathin, high efficiency solar cells were obtained from GaAs films prepared by the CLEFT process, with conversion efficiency as high as 17% at AMI from a 10 micrometers thick GaAs film. A organometallic CVD was designed and constructed.

Fan, J. C. C.↗
NASA NTRS1982

Development of a large area space solar cell assembly

The development of a large area high efficiency solar cell assembly is described. The assembly consists of an ion implanted silicon solar cell and glass cover. The important attributes of fabrication are the use of a back surface field which is compatible with a back surface reflector, and integration of coverglass application and cell fabrications. Cell development experiments concerned optimization of ion implantation processing of 2 ohm-cm boron-doped silicon. Process parameters were selected based on these experiments and cells with area of 34.3 sq cm wre fabricated. The average AMO efficiency of the twenty-five best cells was 13.9% and the best bell had an efficiency of 14.4%. An important innovation in cell encapsulation was also developed. In this technique, the coverglass is applied before the cell is sawed to final size. The coverglass and cell are then sawed as a unit. In this way, the cost of the coverglass is reduced, since the tolerance on glass size is relaxed, and costly coverglass/cell alignment procedures are eliminated. Adhesive investigated were EVA, FEP-Teflon sheet and DC 93-500. Details of processing and results are reported.

Spitzer, M. B.↗
NASA NTRS1981

Advances in high output voltage silicon solar cells

Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.

Arndt, R. A.↗
NASA NTRS1981

Thin foil silicon solar cells with coplanar back contacts

To fabricate 50 microns thick, coplanar back contact (CBC) silicon solar cells, wraparound junction design was selected and proved to be effective. The process sequence used, the cell design, and the cell performance are described. CBC cells with low solar absorptance have shown AMO efficiencies to 13%, high cells up to 14%; further improvements are projected with predictable optimization.

Ho, F.↗
NASA NTRS1981

Large area, low cost space solar cells with optional wraparound contacts

Design parameters for two large area, low cost solar cells are presented, and electron irradiation testing, thermal alpha testing, and cell processing are discussed. The devices are a 2 ohm-cm base resistivity silicon cell with an evaporated aluminum reflector produced in a dielectric wraparound cell, and a 10 ohm-cm silicon cell with the BSF/BSR combination and a conventional contact system. Both cells are 5.9 x 5.9 cm and require 200 micron thick silicon material due to mission weight constraints. Normalized values for open circuit voltage, short circuit current, and maximum power calculations derived from electron radiation testing are given. In addition, thermal alpha testing values of absorptivity and emittance are included. A pilot cell processing run produced cells averaging 14.4% efficiencies at AMO 28 C. Manufacturing for such cells will be on a mechanized process line, and the area of coverslide application technology must be considered in order to achieve cost effective production.

Michaels, D.↗
NASA NTRS1982

Progress toward cascade cells made by OM-VPE

Organometallic Vapor Phase Epitaxy (COM-VPE) was used to make a sophisticated monolithic cascade cell, with a peak AMO efficiency of 16.6%, not corrected for 14% grid coverage. The cell has 9 epitaxial layers. The top cell is 1.35 microns thick with a 0.1 micron thich emitter. Both cells are heteroface n-p structures. The cascade cell uses metal interconnects. Details of growth and processing are described.

Borden, P. G.↗
NASA NTRS1982

GaAs solar cells

The major thrusts proposed for GaAs were increased efficiency and improved radiation damage data. Current laboratory production cells consistently achieve 16 percent AMO one-Sun efficiency. The user community wants 18-percent efficient cells as soon as possible, and such a goal is though to be achievable in 2 years with sufficient research funds. A 20-percent research cell is considered the efficiency limit with current technology, and such a cell seems realizable in approximately 4 years. Future efficiency improvements await improved substrates and materials. For still higher efficiencies, concentrator cells and multijunction cells are proposed as near-term directions.

Conway, E. J.↗
NASA NTRS1984

Optimal design of high-efficiency single-junction and tandem concentrator space cells at 80 deg C and 100 SUNS

Computer analysis was used to determine the AMO conversion efficiency of single-junction crystalline cells, two-cell and three-cell crystalline tandem structures operating under 100 suns and at 80 C. For optimally designed devices, the calculated efficiencies are 24% for single-junction cells, 33 to 35% for two-cell tandem structures, and 37 to 39% for three-cell tandem structures. Practical efficiencies are expected to be about 15 relative percentage points lower in each case.

Fan, J. C. C.↗
NASA NTRS1984

High speed, low cost, LEO-thermal-cycling facility

The design and operations of a low cost, high rate thermal cycling facility designed for LEO conditions is described. Thermal cycling facilities were constructed with various design criteria. Some were designed to duplicate as closely as possible the conditions a cell or module would encounter while in orbit about the Earth. A typical facility to perform this type of cycling was a large vacuum system with liquid nitrogen cooled walls. The cells were heated by an AMO spectrum solar simulator, then a shutter was closed allowing the cells to give up their heat to the cold walls. This system was good at duplicating the orbital conditions but was slow and very costly to operate. Other systems used a gas atmosphere and heated the cells with radiant heat and cooled the cells by moving them into close proximity to a cold plate. The systems greatly increased the cycle times. Other systems moved the heating and cooling atmosphere into and out of the test areas and achieved reasonable cycle rates. All these systems, however, are expensive to operate.

Hart, R. E., Jr.↗
NASA NTRS1984

High-efficiency Conventional Cells Workshop

Participants expressed more interest in GaAs cells than in Si cells. For silicon cells, the beginning of life efficiency is not a major problem but more research is needed in the end of life efficiency. The beginning of life efficiency of GaAs cells must be brought up to 20% at AMO. More proton damage tests must be conducted. Liquid phase epitaxy technology is current but chemical vapor deposition technology is more flexible. There are no obvious problems in limiting process yields. Technology transfer should occur when market demands are generated.

Fan, J. C. C.↗