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At least 217 records · Page 12
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Quantification of High‐Temperature Transition Al 2 O 3 and Their Phase Transformations**

Abstract High‐temperature treatment of γ‐Al 2 O 3 can lead to a series of polymorphic transformations, including the formation of δ‐Al 2 O 3 and θ‐Al 2 O 3 . Quantification of the microstructure in the range where δ‐ and θ‐Al 2 O 3 are formed represents a formidable challenge, as both phases accommodate a high degree of structural disorder. In this work, we explore the use of an XRD recursive‐stacking formalism for the quantification of high‐temperature transition aluminas. We formulate the recursive‐stacking methodology for modelling of disorder in δ‐Al 2 O 3 and twinning in θ‐Al 2 O 3 and show that explicitly accounting for the disorder is necessary to reliably model the XRD patterns of high‐temperature transition alumina. We also use the recursive stacking approach to study phase transformation during high‐temperature (1050 °C) treatment. We show that the two different intergrowth modes of δ‐Al 2 O 3 have different transformation characteristics and that a significant portion of δ‐Al 2 O 3 is stabilized with θ‐Al 2 O 3 even after prolonged high‐temperature exposures.

Kovarik, Libor↗
DOE OSTI2020

Quantification of High-Temperature Transition Al2O3 and Their Phase Transformations

High temperature exposure of ?-Al2O3 can lead to a series of polymorphic transformations, including the formation of ?-Al2O3 and ?-Al2O3. Quantification of the microstructure in the ?/?-Al2O3 formation range represents a formidable challenge as both phases accommodate a high degree of structural disorder. In this work, we explore the use of XRD recursive stacking formalism for quantification of high temperature transition aluminas. We formulate the recursive stacking methodology for modelling of disorder in ?-Al2O3 and twinning in ?-Al2O3 and show that explicitly accounting for the disorder is necessary to reliably model the XRD patterns of high temperature transition alumina. In the second part, we use the recursive stacking approach to study phase transformation during high temperature (1050 ºC) treatment. We show that the two different intergrowth modes of ?-Al2O3 have different transformation characteristics, and that a significant portion of ?-Al2O3 is stabilized with ?-Al2O3 even after prolonged high-temperature exposures. In discussions, we outline the limitation of the current XRD approach and discuss a possible multimodal XRD and NMR approach which can improve analysis of complex transition aluminas. This work was performed in the Wiley Environmental Molecular Sciences Laboratory (EMSL), a national scientific user facility sponsored by DOEs Office of Biological and Environmental Research and located at PNNL. The work was supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences, Division of Chemical Sciences, Geosciences, and Biosciences.

Kovarik, Libor↗
DOE OSTI2022

Plasma-Assisted Epitaxy of Piezoelectric Sc x Al 1-x N Films on Sapphire for Use in Harsh-Environment Microwave Acoustic Sensors

The Sc x Al 1-x N wurtzite structure has been shown theoretically and experimentally to exhibit significantly higher piezoelectric coupling compared to pure AlN. In this work, a plasma-assisted epitaxial growth method has been used to synthesize epitaxial (0002) Sc x Al 1-x N films on c-sapphire substrates from x = 0.07 to 0.30 by co-evaporating high-purity Sc and Al sources in the presence of a nitrogen plasma generated by an RF plasma source. Epitaxial Sc x Al 1-x N films with highly oriented (0002) grains and in-plane registry were produced on c-sapphire substrates that were pre-exposed to the nitrogen plasma to form an oxynitride seed layer. Growth of Sc x Al 1-x N films was carried out at 930°C under both metal-rich and N-rich conditions using precisely controlled Sc, Al, and N-plasma fluxes. Metal-rich depositions yielded non-(0002)-oriented Sc x Al 1-x N grains and intermetallic ScAl grains. Nitrogen-rich growth with a Sc/Al flux ratio of 1/3 produced the best (0002) epitaxy as determined by x-ray diffraction analysis. Surface acoustic wave resonator (SAWR) devices were fabricated from 500-nm-thick Sc x Al 1-x N and AlN films to extract their electromechanical coupling coefficients, k 2 . As the Sc concentration in the films increases, the degree of (0002) epitaxy is reduced, yet the value of k 2 increases becasue there is more Sc in the wurzite lattice despite the decreased level of (0002) grain alignment. As a result, the use of a 10-nm-thick Si x N y capping layer on top of the Sc x Al 1-x N films aids in preventing etching during SAWR device photolithography and also helps hinder film oxidation up to 800°C.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Structure and dynamics of ILs-based gel polymer electrolytes and its enhanced conductive properties with the incorporation of Al 2 O 3 nanofibers

Here, this work reports the enhanced mobility of ions in ionic liquid (IL)-based gel polymer electrolytes (GPEs) with the incorporation of Al 2 O 3 nanofibers. A combination of PVDF-HFP, EMIMTFSI and LiTFSI with 3 wt% Al 2 O 3 nanofibers has been prepared through solution casting technique. The room temperature ionic conductivity of PVDF-HFP: ILs electrolyte (45:55, weight ratio of 0.82) (GPE) is found to be 2.7 × 10 –5 S cm –1 , which increases up to 7.8 × 10 –5 S cm –1 in Al 2 O 3 containing GPE (Al-GPE). Pulsed field gradient (PFG) NMR results validate the increased ionic conductivity observed in Al-GPE. We found that the diffusivity of Li + , TFSI – and EMIM + increases when Al 2 O 3 nanofibers are well-distributed in the GPE matrix. The surface morphology and the amorphicity of GPEs are examined through SEM and XRD analyses. Lastly, the local structure of Al 2 O 3 fibers and the molecular-level interactions of ions with polymer, and their effect on the diffusivity of ions are established through solid-state NMR detecting 27 Al, 1 H, 13 C, 19 F nuclei including 2D 13 C{ 1 H} HETCOR NMR experiments. The 13 C DPMAS and CPMAS experiments highlight the dynamic heterogeneity associated with the ions that are embedded in the rigid and the mobile phase of GPEs. While some of the ionic species strongly interact with polymer chains in the rigid environment, the majority of them reside in the mobile phase and contribute to the overall increased conductivity. Most importantly, Al 2 O 3 nanofibers significantly affect the dynamics of ionic species that are present in the mobile phase between the polymer chains.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Statistical chronometry of meteorites. I. A Test of 26 Al homogeneity and the Pb-Pb age of the solar system’s $t=0$

Here, we use rapidly cooled achondrites to test the assumption of 26 Al homogeneity in the solar nebula, by checking if there is a single value of t SS , the absolute “Pb-Pb” age of the Solar System’s t=0, that makes concordant their ages from the Al-Mg and Pb-Pb systems. We find that values t SS =4568.42 ± 0.24 Myr do make these ages concordant, and therefore the hypothesis of homogeneous 26 Al is not falsified. This age, defined to be when the solar nebula had ( 26 Al/ 27 Al) = 5.23 × 10 –5 , is significantly older than the ≈ 4567.3 Myr inferred from direct measurements of Pb-Pb ages in CAIs. Discrepancies between the Al-Mg and Pb-Pb chronometers in chondrules and CAIs have previously been interpreted as arising from heterogeneities in 26 Al, under the presumption that the Al-Mg and Pb-Pb systems in CAIs closed simultaneously. We examine this assumption and show that resetting is to be expected in CAIs. In particular, we quantitatively demonstrate that it is plausible that Pb-Pb ages of CAIs were reset at late times, without resetting the earlier Al-Mg ages, if they were transiently heated in the same manner as chondrules. We critically examine Pb-Pb isochrons, refining data and suggesting best practices for their calculation and reporting. We advocate reporting chronometry as times of formation after t=0 rather than absolute ages, as only the former is useful for astrophysical models of the solar nebula. We advocate averaging of multiple samples, rather than anchoring to individual meteorites, to improve precision.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2023

Equation of State and Spin Crossover of (Al, Fe)–Phase H

The transport of hydrogen into Earth's deep interior may have an impact on lower mantle dynamics as well as on the seismic signature of subducted material. Due to the stability of the hydrous phases δ-AlOOH (delta phase), MgSiO 2 (OH) 2 (phase H), and ε-FeOOH at high temperatures and pressures, their solid solutions may transport significant amounts of hydrogen as deep as the core-mantle boundary. Here we have constrained the equation of state, including the effects of a spin crossover in the Fe 3+ atoms, of (Al, Fe)-phase H: Al 0.84 Fe 3+ 0.07 Mg 0.02 Si 0.06 OOH, using powder X-ray diffraction measurements to 125 GPa, supported by synchrotron Mössbauer spectroscopy measurements on (Al, Fe)-phase H and δ-(Al, Fe)OOH. The changes in spin state of Fe 3+ in (Al, Fe)-phase H results in a significant decrease in bulk sound velocity and occurs over a different pressure range (48–62 GPa) compared with δ-(Al, Fe)OOH (32–40 GPa). Changes in axial compressibilities indicate a decrease in the compressibility of hydrogen bonds in (Al, Fe)-phase H near 30 GPa, which may be associated with hydrogen bond symmetrization. The formation of (Al, Fe)-phase H in subducted oceanic crust may contribute to scattering of seismic waves in the mid-lower mantle (~1,100–1,550 km). Accumulation of 1–4 wt.% (Al, Fe)-phase H could reproduce some of the seismic signatures of large, low seismic-velocity provinces. Our results suggest that changes in the electronic structure of phases in the (δ-AlOOH)-(MgSiO 2 (OH) 2 )-(ε-FeOOH) solid solution are sensitive to composition and that the presence of these phases in subducted oceanic crust could be seismically detectable throughout the lower mantle.

58 GEOSCIENCES↗
DOE OSTI2021

Forming mechanism of equilibrium and non-equilibrium metallurgical phases in dissimilar aluminum/steel (Al–Fe) joints

Abstract Forming metallurgical phases has a critical impact on the performance of dissimilar materials joints. Here, we shed light on the forming mechanism of equilibrium and non-equilibrium intermetallic compounds (IMCs) in dissimilar aluminum/steel joints with respect to processing history (e.g., the pressure and temperature profiles) and chemical composition, where the knowledge of free energy and atomic diffusion in the Al–Fe system was taken from first-principles phonon calculations and data available in the literature. We found that the metastable and ductile (judged by the presently predicted elastic constants) Al 6 Fe is a pressure ( P ) favored IMC observed in processes involving high pressures. The MoSi 2 -type Al 2 Fe is brittle and a strong P -favored IMC observed at high pressures. The stable, brittle η-Al 5 Fe 2 is the most observed IMC (followed by θ-Al 13 Fe 4 ) in almost all processes, such as fusion/solid-state welding and additive manufacturing (AM), since η-Al 5 Fe 2 is temperature-favored, possessing high thermodynamic driving force of formation and the fastest atomic diffusivity among all Al–Fe IMCs. Notably, the ductile AlFe 3 , the less ductile AlFe, and most of the other IMCs can be formed during AM, making AM a superior process to achieve desired IMCs in dissimilar materials. In addition, the unknown configurations of Al 2 Fe and Al 5 Fe 2 were also examined by machine learning based datamining together with first-principles verifications and structure predictions. All the IMCs that are not P- favored can be identified using the conventional equilibrium phase diagram and the Scheil-Gulliver non-equilibrium simulations.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Microstructure and properties of additively manufactured Al–Ce–Mg alloys

Additive manufacturing of aluminum alloys is largely dominated by a near-eutectic Al-Si compositions, which are highly weldable, but have mechanical properties that are not competitive with conventional wrought Al alloys. In addition, there is a need for new Al alloys with improved high temperature properties and thermal stability for applications in the automotive and aerospace fields. In this work, we considered laser powder bed fusion additive manufacturing of two alloys in the Al–Ce–Mg system, designed as near-eutectic (Al–11Ce–7Mg) and hyper-eutectic (Al–15Ce–9Mg) compositions with respect to the binary L → Al + Al 11 Ce eutectic reaction. The addition of magnesium is used to promote solid solution strengthening. A custom laser scan pattern was used to reduce the formation of keyhole porosity, which was caused by excessive vaporization due to the high vapor pressure of magnesium. The microstructure and tensile mechanical properties of the alloys were characterized in the as-fabricated condition and following hot isostatic pressing. The two alloys exhibit significant variations in solidification structure morphology. These variations in non-equilibrium solidification structure were rationalized using a combination of thermodynamic and thermal modeling. Both alloys showed higher yield strength than AM Al-10Si-Mg for temperatures up to 350 °C and better strength retention at elevated temperatures than additively manufactured Scalmaloy.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Designing Ta C Virtual Substrates for Vertical Al x Ga 1 − x N Power Electronics Devices

Power electronics are critical for a sustainable energy future, playing a key role in electrification and integration of renewable energy sources into the grid. Advances in ultrawide band gap materials are needed to handle higher powers in smaller form factors while reducing electrical and thermal losses. High Al content Al x Ga 1 − x N is theoretically capable of meeting these demands, but its impact in power electronics has been severely restricted by a lack of substrates that can satisfy conductivity, lattice matching, and/or thermal expansion requirements. We demonstrate that electrically conductive Ta C can be used as a virtual substrate for Al x Ga 1 − x N heteroepitaxy. Scaleably sputtered Ta C grown on Al 2 O 3 , followed by high-temperature face-to-face annealing, produces a thin film Ta C template with an effective hexagonal lattice constant matched to Al 0.70 Ga 0.30 N . Annealing of the Ta C promotes recrystallization, significantly improving crystallinity and reducing crystalline defects from as-deposited columnar grains to a step-and-terrace surface morphology, enabling the subsequent growth of high-quality Al 0.70 Ga 0.30 N by molecular beam epitaxy. X-ray diffraction and scanning transmission electron microscopy confirm that the Al x Ga 1 − x N layer is heteroepitaxially aligned, strain-free, and lattice-matched, transitioning abruptly from Ta C to Al x Ga 1 − x N without intermediate phases. These results demonstrate Ta C virtual substrates as electrically conductive, lattice-matched, and thermally compatible templates for vertical Al x Ga 1 − x N devices that can meet the growing power needs of a sustainable energy future. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗
NASA NTRS1984

The effects of Cr, Co, Al, Mo and Ta on the cyclic oxidation behavior of a prototype cast Ni-base superalloy based on a 2(5) composite statistically designed experiment

A series of cast Ni-base superalloys were systematically varied at selected levels of Co, Cr, Mo, Ta, and Al. The elemental levels varied were Mo, 0 to 4 percent; Cr, 6 to 18 percent; Co, 0 to 20 percent, Ta, 0 to 8 percent; and Al, 3.25 to 6.25 percent. The cyclic oxidation resistance was determined from specific weight change data as a function of time for 1 hr cycles in static air at 1100 C. The significant terms in decreasing order of their importance were Al, Ta, Cr2, Al-Cr, Cr-Co, Co2, Al-Mo, Cr-Mo, Al-Al, and Mo-Ta. The Al term alone accounted for close to 82 percent of the explained variability. The estimating equation showed that the Al level was the most important and should be at its 6.25 wt % maximum value. The Mo and Ta levels should also be at their maximum 4 and 8 wt % respectively. The cobalt composition should be as low as possible, i.e., 0 wt%. The Cr level optimum varies depending on the other 4 levels. The X-ray diffaction results indicate the most protective scales are alumina/aluminate spinel stabilizized with a tri-rutile oxide high in Ta and Mo.

Barrett, C. A.↗
NASA NTRS1986

Study on effects of powder and flake chemistry and morphology on the properties of Al-Cu-Mg-X-X-X powder metallurgy advanced aluminum alloys

A study was conducted: (1) to develop rapid solidification processed (RSP) dispersoid-containing Al-3Cu-2Li-1Mg-0.2Zr alloys as substitutes for titanium alloys and commercial 2XXX aluminum alloys for service to at least 150 C; and (2) to develop RSP Al-4Li-Cu-Mg-Zr alloys as substitutes for high-strength commercial 7XXX alloys in ambient-temperature applications. RSP Al-3Cu-2Li-1Mg-0.2Zr alloys have density-normalized yield stresses at 150 C up to 52% larger than that of 2124-T851 and up to 30% larger than that of Ti-6Al-4V. Strength at 150 C in these alloys is provided by thermally stable delta' (Al3Li), T1 (Al2LiCu), and S' (Al2CuMg) precipitates. Density-normalized yield stresses of RSP Al-3Cu-2Li-1Mg-0.2Zr alloys are up to 100% larger than that of 2124-T851 and equivalent to that of Al-8Fe-4Ce at 260 C. Strength in the RSP alloys at 260 C is provided by incoherent dispersoids and subboundary constituent particles such as T1 and S. The RSP alloys are attractive substitutes in less than or = 100-h exposures for 2xxx and Al-4Fe-Ce alloys up to 260 C and for titanium alloys up to 150 C. RSP Al-4Li-Cu-Mg-Zr alloys have ambient-temperature yield and ultimate tensile stresses similar to that of 7050-T7651, and are 14% less dense. RSP Al-4Li-0.5Cu-1.5Mg-0.2Zr has a 20% higher specific yield stress, 40% higher specific elastic modulus, and superior corrosion resistance compared to the properties of 7050-T7651. Strength in the Al-4Li-Cu-Mg-Zr alloy class is primarily provided by the substructure and delta' precipitates and is independent of Cu:Mg ratio. Improvements in fracture toughness and transverse-orientation properties in both alloy classes depend on improved melt practices to eliminate oxide inclusions which are incorporated into the consolidated forms.

Meschter, P. J.↗
NASA NTRS1999

Evaluation of Pressurization Fatigue Life of 1441 Al-li Fuselage Panel

A study was conducted to evaluate the pressurization fatigue life of fuselage panels with skins fabricated from 1441 Al-Li, an attractive new Russian alloy. The study indicated that 1441 Al-Li has several advantages over conventional aluminum fuselage skin alloy with respect to fatigue behavior. Smooth 1441 Al-Li sheet specimens exhibited a fatigue endurance limit similar to that for 1163 Al (Russian version of 2024 Al) sheet. Notched 1441 Al-Li sheet specimens exhibited greater fatigue strength and longer fatigue life than 1163 Al. In addition, Tu-204 fuselage panels fabricated by Tupolev Design Bureau using Al-Li skin and ring frames with riveted 7000-series aluminum stiffeners had longer pressurization fatigue lives than did panels constructed from conventional aluminum alloys. Taking into account the lower density of this alloy, the results suggest that 1441 Al-Li has the potential to improve fuselage performance while decreasing structural weight.

Bird, R. Keith↗
NASA NTRSDate not supplied

The Chemical and Isotopic Signatures of the Hibonite-rich FUN Inclusion "HIDALGO" in Dar al Gani 027 (CO3)

Refractory Ca-Al-rich Inclusions (CAIs) with FUN (Fractionation with Unidentified Nuclear effects) characteristics are peculiar samples among all high-temperature components in chondritic meteorites. They are generally characterized by strong mass-dependent isotopic fractionations in several elements (e.g., O, Mg, Ca, Ti), large (~5-20‰) enrichments or depletions in neutron-rich isotopes (e.g., 48 Ca, 50 Ti, 54 Cr), and low inferred abundances of 26 Al ( 26 Al/ 27 Al < 1×10 −5 ). Understanding the origins of these features in FUN CAIs can shed light on the astrophysical environment and chemical processes that took place in the early Solar System. A large fraction (slightly less than 50%) of the ~20 FUN CAIs discovered so far are hibonite-rich (such as HAL, SHAL and DH-H1, collectively called HAL-type inclusions hereafter). According to their elemental and isotopic signatures and the results of evaporation experiments, HAL-type inclusions are thought to have formed as a distillation residue. However, questions regarding the timing of the formation of HAL-type inclusions (or FUN inclusions in general) relative to those of regular CAIs and the decoupling between the 26 Al abundances and nucleosynthetic anomalies remain poorly understood. In 2021, we reported the discovery of a new HAL-type inclusion, HIDALGO (Hibonite in Dar al Gani CO3) in the CO3 chondrite Dar al Gani 027 (DaG027), based on its (fractionated) oxygen isotopic compositions and low inferred 26 Al/ 27 Al ratio of (1.50±0.02)×10 −5 . Since then, more work on other short-lived and stable isotope systems and trace element abundances has been conducted. Here we report these new results and discuss the implications for the possible formation history of HIDALGO and origins of shortlived radionuclides (SLRs).

Meteorite↗
DOE OSTI2020

Materials Data on Al(SO6)2 by Materials Project

Al(SO5)2O2 crystallizes in the orthorhombic Pnma space group. The structure is two-dimensional and consists of four oxygen molecules and two Al(SO5)2 sheets oriented in the (0, 0, 1) direction. In each Al(SO5)2 sheet, Al is bonded to six O atoms to form AlO6 octahedra that share corners with four equivalent SO4 tetrahedra. There are a spread of Al–O bond distances ranging from 1.88–1.92 Å. S is bonded to four O atoms to form SO4 tetrahedra that share corners with two equivalent AlO6 octahedra. The corner-sharing octahedra tilt angles range from 42–46°. There are a spread of S–O bond distances ranging from 1.46–1.51 Å. There are five inequivalent O sites. In the first O site, O is bonded in a distorted bent 120 degrees geometry to one Al and one S atom. In the second O site, O is bonded in a single-bond geometry to one S atom. In the third O site, O is bonded in a single-bond geometry to one Al atom. In the fourth O site, O is bonded in a bent 150 degrees geometry to one Al and one S atom. In the fifth O site, O is bonded in a single-bond geometry to one S atom.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Al(V4Ge)3 by Materials Project

Al(V4Ge)3 crystallizes in the orthorhombic Pmmm space group. The structure is three-dimensional. there are five inequivalent V sites. In the first V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Ge atoms. There are a spread of V–V bond distances ranging from 2.39–2.93 Å. Both V–Al bond lengths are 2.67 Å. Both V–Ge bond lengths are 2.67 Å. In the second V site, V is bonded in a 6-coordinate geometry to six V and four Ge atoms. There are one shorter (2.39 Å) and four longer (2.92 Å) V–V bond lengths. All V–Ge bond lengths are 2.67 Å. In the third V site, V is bonded in a 6-coordinate geometry to ten V, one Al, and three Ge atoms. There are a spread of V–V bond distances ranging from 2.38–2.93 Å. The V–Al bond length is 2.67 Å. All V–Ge bond lengths are 2.67 Å. In the fourth V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Ge atoms. There are one shorter (2.38 Å) and one longer (2.39 Å) V–V bond lengths. Both V–Al bond lengths are 2.67 Å. Both V–Ge bond lengths are 2.67 Å. In the fifth V site, V is bonded in a 6-coordinate geometry to six V and four Ge atoms. Both V–V bond lengths are 2.39 Å. All V–Ge bond lengths are 2.67 Å. Al is bonded to twelve V atoms to form AlV12 cuboctahedra that share edges with two equivalent GeV12 cuboctahedra, edges with four equivalent AlV12 cuboctahedra, and faces with eight equivalent GeV12 cuboctahedra. There are two inequivalent Ge sites. In the first Ge site, Ge is bonded to twelve V atoms to form GeV12 cuboctahedra that share edges with two equivalent AlV12 cuboctahedra, edges with four equivalent GeV12 cuboctahedra, and faces with eight equivalent GeV12 cuboctahedra. In the second Ge site, Ge is bonded to twelve V atoms to form GeV12 cuboctahedra that share edges with six equivalent GeV12 cuboctahedra, faces with four equivalent AlV12 cuboctahedra, and faces with four equivalent GeV12 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Al(V4Si)3 by Materials Project

Al(V4Si)3 crystallizes in the orthorhombic Pmmm space group. The structure is three-dimensional. there are five inequivalent V sites. In the first V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Si atoms. There are a spread of V–V bond distances ranging from 2.32–2.91 Å. Both V–Al bond lengths are 2.66 Å. Both V–Si bond lengths are 2.63 Å. In the second V site, V is bonded in a 6-coordinate geometry to six V and four Si atoms. There are one shorter (2.39 Å) and four longer (2.88 Å) V–V bond lengths. There are two shorter (2.63 Å) and two longer (2.65 Å) V–Si bond lengths. In the third V site, V is bonded in a 6-coordinate geometry to ten V, one Al, and three Si atoms. There are a spread of V–V bond distances ranging from 2.32–2.95 Å. The V–Al bond length is 2.70 Å. There are one shorter (2.61 Å) and two longer (2.63 Å) V–Si bond lengths. In the fourth V site, V is bonded in a 6-coordinate geometry to ten V, two equivalent Al, and two equivalent Si atoms. There are one shorter (2.27 Å) and one longer (2.45 Å) V–V bond lengths. Both V–Al bond lengths are 2.66 Å. Both V–Si bond lengths are 2.63 Å. In the fifth V site, V is bonded in a 6-coordinate geometry to six V and four Si atoms. There are one shorter (2.35 Å) and one longer (2.38 Å) V–V bond lengths. There are two shorter (2.63 Å) and two longer (2.65 Å) V–Si bond lengths. Al is bonded to twelve V atoms to form AlV12 cuboctahedra that share edges with two equivalent SiV12 cuboctahedra, edges with four equivalent AlV12 cuboctahedra, and faces with eight equivalent SiV12 cuboctahedra. There are two inequivalent Si sites. In the first Si site, Si is bonded to twelve V atoms to form SiV12 cuboctahedra that share edges with two equivalent AlV12 cuboctahedra, edges with four equivalent SiV12 cuboctahedra, and faces with eight equivalent SiV12 cuboctahedra. In the second Si site, Si is bonded to twelve V atoms to form SiV12 cuboctahedra that share edges with six equivalent SiV12 cuboctahedra, faces with four equivalent AlV12 cuboctahedra, and faces with four equivalent SiV12 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Materials Data on Al(V4Sn)3 by Materials Project

Al(V4Sn)3 crystallizes in the orthorhombic Pmmm space group. The structure is three-dimensional. there are five inequivalent V sites. In the first V site, V is bonded in a 6-coordinate geometry to six V, two equivalent Al, and two equivalent Sn atoms. There are a spread of V–V bond distances ranging from 2.27–3.02 Å. Both V–Al bond lengths are 2.72 Å. Both V–Sn bond lengths are 2.79 Å. In the second V site, V is bonded in a 6-coordinate geometry to two V and four Sn atoms. The V–V bond length is 2.46 Å. All V–Sn bond lengths are 2.76 Å. In the third V site, V is bonded in a 6-coordinate geometry to four V, one Al, and three Sn atoms. There are a spread of V–V bond distances ranging from 2.41–2.91 Å. The V–Al bond length is 2.65 Å. There are two shorter (2.78 Å) and one longer (2.81 Å) V–Sn bond lengths. In the fourth V site, V is bonded in a 3-coordinate geometry to ten V, two equivalent Al, and two equivalent Sn atoms. There are one shorter (2.28 Å) and one longer (2.67 Å) V–V bond lengths. Both V–Al bond lengths are 2.72 Å. Both V–Sn bond lengths are 2.78 Å. In the fifth V site, V is bonded in a 6-coordinate geometry to two equivalent V and four Sn atoms. There are one shorter (2.47 Å) and one longer (2.48 Å) V–V bond lengths. There are two shorter (2.75 Å) and two longer (2.76 Å) V–Sn bond lengths. Al is bonded to twelve V atoms to form AlV12 cuboctahedra that share edges with two equivalent SnV12 cuboctahedra, edges with four equivalent AlV12 cuboctahedra, and faces with eight equivalent SnV12 cuboctahedra. There are two inequivalent Sn sites. In the first Sn site, Sn is bonded to twelve V atoms to form SnV12 cuboctahedra that share edges with two equivalent AlV12 cuboctahedra, edges with four equivalent SnV12 cuboctahedra, and faces with eight equivalent SnV12 cuboctahedra. In the second Sn site, Sn is bonded to twelve V atoms to form SnV12 cuboctahedra that share edges with six equivalent SnV12 cuboctahedra, faces with four equivalent AlV12 cuboctahedra, and faces with four equivalent SnV12 cuboctahedra.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Tribological behaviors of nanotwinned Al alloys

Wear-induced damages cause significant materials loss each year. Al alloys are widely used by industry but usually have low wear resistance. Here, we compare the tribological behaviors of ultrafine grained Al, a nanoprecipitate hardened Al 7075 alloy and nanotwinned Al–Ni alloys using the nanoscratch. The nanotwinned Al–Ni alloys exhibit lower coefficient of friction and much greater wear resistance than the Al and Al 7075 alloys. Additionally, the enhanced wear properties of Al–Ni alloys arise from their high strength and the evolution of nanotwinned microstructures into gradient nanograins during wear. These findings on fundamental wear mechanisms in nanotwinned alloys may advance the discovery of wear-resistant metallic materials.

36 MATERIALS SCIENCE↗