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At wafer probe, units of the TA6567 circuit, a beam leaded COS/MOS/SOS 256-bit RAM, were demonstrated to be functionally perfect. An aluminum gate current-sense version and a silicon-gate voltage-sense version of this memory were developed. Initial base line data for the beam lead SOS process using the TA5388 circuit show the stability of the dc device characteristics through the beam lead processing.
Various top contact metal systems were studied. Only Ti Pd Cu approaches baseline (Ti Pd Ag) quality, but this system shows a lack of long term stability. Aluminum back surface field structures were fabricated and thicknesses of p superscript + material of up to 7.0 microns were achieved with open circuit voltages of 0.59V. A general purpose ultrasonic welder was purchased and tests using various metal foils are under way. During fabrication of the demonstration module, several cells became cracked. Due to redundancy of interconnections, the module was not open circuited but the efficiency was reduced to 8.8%. The broken cell was interconnected with a strap across the back and the efficiency was increased to 11.5%. A cost analysis was made and the results indicate a selling price of $0.56/watt peak (in 1986 with 1975 dollars).
Two types of promising phosphide skutterudite materials, Co(1-x)NixP3 (x= 0.025 to 0.70) and CoAs(3-x)Px (x=0.5 to 0.10), have been synthesized and their transport properties measured. These compounds were prepared using a direct synthesis technique. The samples were hot pressed and analyzed by electron microprobe microscopy. Hall Effect measurements were conducted to determine the electrical conductivity, mobility and carrier concentration. In addition, Seebeck voltage and thermal conductivity measurements were performed. The thermoelectric properties are presented anddiscussed as a function of temperature up to 1273 K. The thermal stability of the primary CoP3 was examined in a static vacuum under isothermal and in-gradient conditions. The effect of the presence of 1 atm of a cover gas on the material loss rate was analyzed.
NASA needs solar arrays that are thin, flexible, and highly efficient; package compactly for launch; and deploy into large, structurally stable high-power generators. Inverted metamorphic multijunction (IMM) solar cells can enable these arrays, but integration of this thin crystalline cell technology presents certain challenges. The Thin Hybrid Interconnected Solar Array (THINS) technology allows robust and reliable integration of IMM cells into a flexible blanket comprising standardized modules engineered for easy production. The modules support the IMM cell by using multifunctional materials for structural stability, shielding, coefficient of thermal expansion (CTE) stress relief, and integrated thermal and electrical functions. The design approach includes total encapsulation, which benefits high voltage as well as electrostatic performance.
We report a novel oscillator for photonic RF systems. This oscillator is capable of generating high-frequency signals up to 70 GHz in both electrical and optical domains and is a special voltage-controlled oscillator with an optical output port. It can be used to make a phase-locked loop (PLL) and perform all functions that a PLL is capable of for photonic systems. It can be synchronized to a reference source by means of optical injection locking, electrical injection locking, and PLL. It can also be self-phase locked and self-injection locked to generate a high-stability photonic RF reference. Its applications include high-frequency reference regeneration and distribution, high-gain frequency multiplication, comb-frequecy and square-wave generation, carrier recovery, and clock recovery. We anticipate that such photonic voltage-controlled oscillators (VCOs) will be as important to photonic RF systems as electrical VCOs are to electrical RF systems.
The present work provides an improved fluid flow and heat-transfer modeling of float-zone growth by introducing a RF heating model so that an ad hoc heating temperature profile is not necessary. Numerical simulations were carried out to study the high-temperature float-zone growth of titanium carbide single crystal. The numerical results showed that the thermocapillary convection occurring inside the molten zone tends to increase the convexity of the melt-crystal interface and decrease the maximum temperature of the molten zone, while the natural convection tends to reduce the stability of the molten zone by increasing its height. It was found that the increase of induced heating due to the increase of applied RF voltage is reduced by the decrease of zone diameter. Surface tension plays an important role in controlling the amount of induced heating. Finally, a comparison of the computed shape of the free surface with a digital image obtained during a growth run showed adequate agreement.
Implementations of a state-plane-trajectory control law for energy storage dc-to-dc converters are presented. Performance characteristics of experimental voltage step-up converter systems employing these implementations are reported and compared to theoretical predictions.
High-powered motors typically have very low resistance and inductance (R and L) in their windings. This makes the pulse-width modulated (PWM) control of the current very difficult, especially when the bus voltage (V) is high. These R and L values are dictated by the motor size, torque (Kt), and back-emf (Kb) constants. These constants are in turn set by the voltage and the actuation torque-speed requirements. This problem is often addressed by placing inductive chokes within the controller. This approach is undesirable in that space is taken and heat is added to the controller. By keeping the same motor frame, reducing the wire size, and placing a correspondingly larger number of turns in each slot, the resistance, inductance, torque constant, and back-emf constant are all increased. The increased inductance aids the current control but ruins the Kt and Kb selections. If, however, a fraction of the turns is moved from their "correct slot" to an "incorrect slot," the increased R and L values are retained, but the Kt and Kb values are restored to the desired values. This approach assumes that increased resistance is acceptable to a degree. In effect, the heat allocated to the added inductance has been moved from the controller to the motor body, which in some cases is preferred.
Arcing between the electrodes of an ion rocket thrustor is investigated for the effect it will have on the overall design of ion rocket systems. The effect of generator, transformer, and inserted impedances on system stability and efficiency, and on operating lifetime of thrustor components are considered. Rate of arcing, preferential arc paths, speed of arc interruption, and response of thrustors to voltage transients are also discussed. The study indicates that arcing is a system hazard and that arcing rates are of prime importance in the design and development of thrustors, thrustor arrays, and system components. Two system models for reducing the hazard are proposed, based on principles developed herein, published data, and experience available from operation of nine-module electron-bombardment thrustor array. Experimental investigation of these models is presently underway.
Data for the beam-leaded silicon-on-sapphire (SOS) process using the TA5388 dual-complementary pair plus inverted circuit show the stability of the dc device characteristics through the complete beam-lead processing and packaging steps. A more complex circuit, the TA6567 - a silicon-gate, voltage-sense BL/CMOS/SOS 256-bit RAM, has also been made that was functionally perfect at wafer probe. Efforts to increase the yield of this circuit and to obtain electrically perfect packaged units are discussed.
NASA is currently developing a low mass antenna which derives its reflector surface quality from the application of electrostatic forces to form a thin membrane into the desired concave reflector surface. The shuttle-deployed antenna would have a diameter of 100 m and an RMS surface smoothness of 10 to 1 mm for operation at 1 to 10 GHz. Surface quality measurements have been made on a highly deformable elastic membrane, pressurized by electrostatic forces. Included are the effects of the perimeter boundary, splicing of the membrane, the long-scale smoothness of commercial membranes, and the spatial controllability of the membrane using voltage adjustments to alter the electrostatic forces. The electrostatic membrane was found to operate well in an open-loop sense, showing a high degree of position stability and negligible power consumption in dry air. Visco-electric creep was not evident, but the polymer membrane did expand and contract considerably due to its hygroscopic expansion coefficient. A residual roughness of about 0.75 mm existed with the polymer used in these tests; this error is attributed to seams and membrane anisotropy where the material is stiffer in one direction.
A variable thermal control coating (modified chromic acid anodizing) has been developed to meet the needs for the thermal control of spacecraft. This coating, with controlled variable ranges of 0.10 to 0.72 thermal emittance and 0.2 to 0.4 solar absorptance, allows the user to select any value of thermal emittance and solar absorptance within the range specified and obtain both values within + or - 0.02. Preliminary solar stability has shown less than 15 percent degradation over 2000 hours of vacuum solar exposure. The technique has been determined to be sensitive to the parameters of voltage, rate of voltage application, time, temperature, acid concentration, and material pretreatment.
This project involves using quantum chemistry to simulate surface chemical reactions in the presence of an electric field for nanofabrication of diamond and silicon. A field delivered by a scanning tunneling microscope (STM) to a nanometer scale region of a surface affects chemical reaction potential energy surfaces (PES) to direct atomic scale surface modification to fabricate sub-nanometer structures. Our original hypothesis is that the applied voltage polarizes the charge distribution of the valence electrons and that these distorted molecular orbitals can be manipulated with the STM so as to change the relative stabilities of the electronic configurations over the reaction coordinates and thus the topology of the PES and reaction kinetics. Our objective is to investigate the effect of applied bias on surface reactions and the extent to which STM delivered fields can be used to direct surface chemical reactions on an atomic scale on diamond and silicon. To analyze the fundamentals of field induced chemistry and to investigate the application of this technique for the fabrication of nanostructures, we have employed methods capable of accurately describing molecular electronic structure. The methods we employ are density functional theory (DFT) quantum chemical (QC) methods. To determine the effect of applied bias on surface reactions we have calculated the QC PESs in various applied external fields for various reaction steps for depositing or etching diamond and silicon. We have chosen reactions which are thought to play a role in etching and the chemical vapor deposition growth of Si and diamond. The PESs of the elementary reaction steps involved are then calculated under the applied fields, which we vary in magnitude and configuration. We pay special attention to the change in the reaction barriers, and transition state locations, and search for low energy reaction channels which were inaccessible without the applied bias.
Specific contact resistivities for as-fabricated Au contacts on n-p InP solar cells are typically in the 10(exp -3) ohm/sq cm range, but contact resistivities in the 10(exp -6) ohm/sq cm range can be obtained if the cells are heat treated at 400 C for a few minutes. This heat treatment, however, results in a dramatic drop in the open circuit voltage of the cell due to excessive dissolution of the emitter into the metallization. It was found that low values of contact resistivity can be secured without the accompanying drop in the open circuit voltage by adding Ga and In in the Au metallization. It is shown that Au contacts containing as little as 1 percent atomic Ga can suppress the reaction that takes place at the metal-InP interface during heat treatment, while exhibiting contact resistivity values in the low 10(exp -5) ohm/sq cm. Detailed explanations for the observed superior thermal stability of these contacts are presented.
The design of transistorized voltage converters of the series, shunt, and switching types is developed and explained. The shunt converter has the smallest size, lowest weight, and lowest parts count. Regulation and stability are very good but efficiency is poor. The series converter is somewhat larger in size, heavier, uses more parts, and has an order of magnitude (10 to 1) decrease in regulation performance in comparison with the shunt converter. The switching converter tends to be a compromise with increased size, weight, and circuit complexity to gain in efficiency and regulation over a series converter. A switching converter will usually exhibit ringing in the output filter for some types of loads so it has only fair stability performance.-
Device solves problem of differential voltage gain in sampled-data metal-oxide semiconductor, producing gain at any frequency compatible with CCD operation, with low noise, low power, good linearity, and high stability.
An electrochemical titration method was used to investigate the dynamic states in a cylindrical layer of convecting tin. The liquid tin was contained in a cell, with curved boundaries made of quartz and flat boundaries made of a solid state electrolyte - yttria-stabilized zirconia (YSZ). The electrolyte acted as a window through which a trace amount of oxygen could be pumped in or out by the application of a constant voltage. The concentration at the YSZ interface was monitored by operating the electrochemical cell in the galvanic mode. Experimentally determined effective diffusivities of oxygen were compared with the molecular diffusivity. Dynamic states in the convective flow were thus inferred. Temperature measurements were simultaneously made in order to identify the onset of oscillations from a steady convective regime. The experiments were conducted for two different aspect ratios for various imposed temperature gradients and two different orientations with respect to gravity. Transcritical states were identified and comparison to two-dimensional numerical models were made.
A 2.3 kW Breadboard Power Processing Unit (BBPPU) was developed as part of the NASA Solar Electric Propulsion Technology Application Readiness (NSTAR) Program. The NSTAR program will deliver an electric propulsion system based on a 30 cm xenon ion thruster to the New Millennium (NM) program for use as the primary propulsion system for the initial NM flight. The final development test for the BBPPU, the Functional Integration Test, was carried out to demonstrate all aspects of BBPPU operation with an Engineering Model Thruster. Test objectives included: (1) demonstration and validation of automated thruster start procedures, (2) demonstration of stable closed loop control of the thruster beam current, (3) successful response and recovery to thruster faults, and (4) successful safing of the system during simulated spacecraft faults. These objectives were met over the specified 80-120 VDC input voltage range and 0.5-2.3 output power capability of the BBPPU. Two minor anomalies were noted in discharge and neutralizer keeper current. These anomalies did not affect the stability of the system and were successfully corrected.