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At least 199 records · Page 11

Proton Effects and Test Issues for Satellite Designers: Ionization Effects - Section 4

This portion of the Short Course is divided into two segments to separately address the two major proton-related effects confronting satellite designers: ionization effects and displacement damage effects. While both of these topics are deeply rooted in "traditional" descriptions of space radiation effects, there are several factors at play to cause renewed concern for satellite systems being designed today. For example, emphasis on Commercial Off-The-Shelf (COTS) technologies in both commercial and government systems increases both Total Ionizing Dose (TID) and Single Event Effect (SEE) concerns. Scaling trends exacerbate the problems, especially with regard to SEEs where protons can dominate soft error rates and even cause destructive failure. In addition, proton-induced displacement damage at fluences encountered in natural space environments can cause degradation in modern bipolar circuitry as well as in many emerging electronic and opto-electronic technologies. A crude, but nevertheless telling, indication of the level of concern for proton effects follows from surveying the themes treated in papers presented at this conference. The table lists themes found in the IEEE Transaction on Nuclear Science (TNS) December issue from the past year and compares them with the December issue's content a decade earlier. Ten years ago there were nine papers, or about 10% of the total, dealing with the four indicated topics. At that time, single event effects from protons were the primary concern, and these were thought to be possible only when a nuclear reaction initiated energetic recoil atoms. This is shown in the table as the 'traditional" SEE subject. A decade later, submissions addressing this topic had doubled, while papers devoted to displacement damage studies had increased from one to nine! More importantly, displacement damage effects in the natural space environments have become a concern for degradation in modern devices (other than solar cells), and this was not so ten years earlier.

Marshall, Paul W.↗

TCAD-Machine Learning Enabled TID Compact Model Development for Commercial SiC MOSFET

We propose a TCAD (Technology Computer Aided Design)-machine learning coupled approach that combines a TCAD tool (Charon), optimization/uncertainty quantification tool (Dakota), surrogate models, and Bayesian learning capabilities. The coupling approach is used for accurate modeling and calibration of total ionizing dose (TID) induced threshold voltage (V th ) shifts in Commercial-Off-The-Shelf (COTS) semiconductor devices and to develop physics-informed TID compact models. This versatile approach is applied to model the TID effect in an exemplar COTS 3.3 kV SiC power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). With the Charon-Dakota coupling, we can determine key device geometry and doping values based on device physics, which are difficult to obtain or not available for COTS devices but important for TCAD simulation; additionally, we can efficiently generate thousands of simulation results in a large parameter space, which makes it possible to develop data-driven surrogate models and perform Bayesian calibration. Utilizing the full tool-coupling approach, we achieve calibrated TCAD simulation models that accurately capture the average TID-induced V th shifts behavior with total doses and V th shifts saturation at high doses as observed in experimental data. More importantly, the calibrated TCAD simulations are obtained with determined TID model parameters (e.g., hole trap density and capture cross section) values that contain well quantified uncertainties. Furthermore, we can isolate and quantify the noises that are not captured by the TCAD models but exist in the measured data due to measurements and devices variabilities. Lastly, the calibrated surrogate models are used to develop physics-informed TID compact models. The method is generalizable to other devices and/or radiation conditions with few modifications and can provide well-determined uncertainties.

COTS↗

Performance evaluation of pulse shape discrimination capable organic scintillators for space applications

Scintillators with pulse-shape discrimination (PSD) capability are of great interest to many fields in the scientific community. The ability to discern a gamma ray from a neutron using PSD varies between different types of scintillator materials and dopants. Here a new generation of organic scintillator materials with PSD capability were studied to determine their radiation hardness to neutron and gamma-ray radiation. The PSD capability, average pulse shapes, and light output of four types of organic scintillator were characterized before and after neutron and gamma-ray irradiation. The main goal of this investigation is to study the effects of long-term irradiation that may be experienced in space applications on the light output and particle discriminating capabilities of each material. EJ-270, EJ-276, organic glass, and Stilbene were tested. Damage due to neutron irradiation (displacement damage) was not observed in any of the scintillators up to 2.56 x 10 11 n/cm 2 , except for Stilbene which showed a small (12%) decrease in light output. All scintillators presented some light output reduction after gamma-ray irradiation (total ionizing dose), with reductions of 17% (EJ-276 and OGS), 32% (EJ-270), and 42% (Stilbene) observed immediately after 100 kRad.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Gamma Radiation Effects in Amorphous and Crystalline Polyaryletherketones

This work investigates the effect of gamma radiation on chain scission and crosslinking in polyaryletherketone (PAEK) thermoplastic filaments, namely, polyetheretherketone (PEEK) and polyetherketoneketone (PEKK) that is either semicrystalline (PEKK-c) or highly amorphous (PEKK-a). The PAEK thermoplastic filaments were exposed to total ionizing doses (TID) of gamma radiation from 1 to 8 MGy in the Gamma Irradiation Facility at Sandia National Laboratories. A combination of thermal and FT-IR spectral analysis of the irradiated specimens was used to study the chain scission and crosslinking behavior between PEEK, PEKK-c, and PEKK-a. Crystallinity decreased with increased TID and melt enthalpy decreased. Despite clear indications of changes to melt and crystallization behavior, any change to the glass-transition temperature was minor until a post-irradiation thermal annealing occurred, which caused an increase in crystallinity. Gamma radiation impacted PEKK-a more due to the lower degree of initial crystallinity, where a reduction in melt enthalpy, crystallinity, and crystallization kinetics was observed. Despite these effects, the ability to achieve a higher degree of crystallization (X c < 20%) by annealing was not affected. The results presented here provide important insight into the performance of a class of commercialized PEKK thermoplastics exposed to a harsh radiation environment.

Crystallinity↗

Evidence for ionization damage in mid-wave infrared nBn detectors

The effects of 63 MeV proton and 60Co gamma irradiation on the operation of 4.3 μm cutoff nBn photodetectors are demonstrated separately, and both are shown to yield a total ionizing dose (TID) effect. The effect is shown here in an InAsSbBi nBn detector and has been observed in other bulk alloy nBn detectors, and is unusual as it is notably absent in superlattice nBn detectors. The non-antireflection coated detectors exhibit a pre-radiation quantum efficiency of 17% at 3.3 μm wavelength and a dark current density of 50 μA/cm2, or roughly 300× the Rule 07 expectation, at their ideal operating voltage of −0.4 V bias at 150 K. Step-wise proton irradiation and in situ measurement indicate that the dark current increases to about 400× Rule 07 at the highest proton dose level of 150 krad(Si) (9.10 × 1011 p+/cm2), while the quantum efficiency is degraded at a relatively faster rate than the majority of analogous detectors characterized by our lab. Both the photocurrent and dark current are also shown to exhibit a turn-on voltage magnitude reduction of 100 mV following either gamma or proton irradiation, a trend which is attributable to negative trapped charge at the barrier interface (TID effect). This theory is further supported by an observed capacitance density magnitude reduction with dose and affirmed with Silvaco TCAD simulations. Following both proton exposure and subsequent anneal and gamma exposure and subsequent anneal; dark current, photocurrent, and CV all approach their pre-radiation baseline values.

Physics↗

Characterization of a gigabit transceiver for the ATLAS inner tracker pixel detector readout upgrade

We present a gigabit transceiver prototype Application Specific Integrated Circuit (ASIC), GBCR, for the ATLAS Inner Tracker (ITk) Pixel detector readout upgrade. GBCR is designed in a 65-nm CMOS technology and consists of four upstream receiver channels, a downstream transmitter channel, and an Inter-Integrated Circuit (I2C) slave. The upstream channels receive the data at 5.12 Gbps passing through 5-meter 34-American Wire Gauge (AWG) Twin-axial (Twinax) cables, equalize and retime them with a recovered clock, and then drive an optical transmitter. The downstream channel receives the data at 2.56 Gbps from an optical receiver and drives the cable as same as the upstream channels. The jitter of the upstream channel output is measured to be 35 ps (peak-peak) when the Clock-Data Recovery (CDR) module is turned on and the jitter of the downstream channel output after the cable is 138 ps (peak-peak). The power consumption of each upstream channel is 72 mW when the CDR module is turned on and the downstream channel consumes 27 mW. GBCR survives the total ionizing dose of 200 kGy.

47 OTHER INSTRUMENTATION↗

A radiation tolerant clock generator for the CMS endcap timing layer readout chip

Here, we present the test results of a low jitter Phase Locked Loop (PLL) prototype chip for the CMS Endcap Timing Layer readout chip (ETROC). This chip is based on the improved version of a clock synthesis circuit named ljCDR from the Low Power Gigabit Transceiver (lpGBT) project. The ljCDR is tested in its PLL mode. An automatic frequency calibration (AFC) block with the Triple Modular Redundancy (TMR) register is developed for the LC-oscillator calibration. The chip was manufactured in a 65 nm CMOS process with 10 metal layers. The chip has been extensively tested, including Total Ionizing Dose (TID) testing up to 300 Mrad and Single Event Upset (SEU) testing with heavy ions possessing a Linear Energy Transfer (LET) from 1.3 to 62.5 MeV × cm 2 /mg.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Development and construction status of the Mu2e electromagnetic calorimeter mechanical structures

Abstract The Mu2e experiment at Fermilab will search for the CLFV neutrino-less coherent conversion of a muon into an electron in the field of an aluminum nucleus. The observation of this process would be the evidence of physics beyond the Standard Model. Mu2e comprises a straw-tracker, an electromagnetic calorimeter and an external veto for cosmic rays. The calorimeter provides electron identification, a fast trigger and aids track reconstruction. It is a state-of-the-art crystal calorimeter and employs 1340 pure CsI crystals readout by UV-extended SiPM and fast electronics. The design consists of two identical annular disks positioned at the relative distance of 70 cm downstream the target.The hostile Mu2e conditions (total ionizing dose of 12 krad and a neutron fluence of 5 × 10 10 n/cm 2 @ 1 MeVeq (Si)/y, 1 T magnetic field and vacuum level of 10 −4 Torr) posed tight constraints on the mechanical structures and materials choice. The support structure of the two crystal matrices employs two aluminum hollow rings and parts made of open-cell vacuum-compatible carbon fiber. SiPMs and front-end electronics for each crystal are assembled in one mechanical unit inserted in a machined copper holder. The units are supported by a plate made of vacuum-compatible material. The plate integrates the cooling system made of a network of copper lines flowing a low temperature fluid and placed in thermal contact with the copper holders. The DAQ is hosted in aluminum crates positioned on the lateral surface of the disks. The crates also integrate the DAQ electronics cooling system. We review the constraints on the calorimeter structures design, the development of all the structural components, including the simulations that have determined the materials and technological choices and the specifications of the cooling station, components production and quality assurance tests, the procedures for detector assembly, transportation and installation in the experimental area.

Instruments & Instrumentation↗

Layer-Dependent Bit Error Variation in 3-D NAND Flash Under Ionizing Radiation

In this paper, we studied the total ionization dose (TID) effects on the multilevel-cell (MLC) 3-D NAND flash memory using Co-60 gamma radiation. We found a significant page-to-page bit error variation within a physical memory block of the irradiated memory chip. Our analysis showed that the origin of the bit error variation is the unique vertical layer-dependent TID response of the 3-D NAND. We found that the memory pages located at the upper and lower layers of the 3-D stack show higher fails compared to the middle-layer pages of a given memory block. We confirmed our findings by comparing radiation response of four different chips of the same specification. In addition, we compared the TID response of the MLC 3-D NAND with that of the 2-D NAND chip, which showed less page-to-page variation in bit error within a given memory block. We discuss the possible application of our findings for the radiation-tolerant smart memory controller design.

3-D NAND flash↗

Radiation-Induced Error Mitigation by Read-Retry Technique for MLC 3-D NAND Flash Memory

Here, we have evaluated the Read-Retry (RR) functionality of the 3-D NAND chip of multilevel-cell (MLC) configuration after total ionization dose (TID) exposure. The RR function is typically offered in the high-density state-of-the-art NAND memory chips to recover data once the default memory read method fails to correct data with error correction codes (ECCs). In this work, we have applied the RR method on the irradiated 3-D NAND chip that was exposed with a Co-60 gamma-ray source for TID up to 50 krad (Si). Based on our experimental evaluation results, we have proposed an algorithm to efficiently implement the RR method to extend the radiation tolerance of the NAND memory chip. Our experimental evaluation shows that the RR method coupled with ECC can ensure data integrity of MLC 3-D NAND for TID up to 50 krad (Si).

3-D NAND↗

Analytical Bit-Error Model of NAND Flash Memories for Dosimetry Application

In this work, we provide an analytical model for the total ionizing dose (TID) effects on the bit error statistics of commercial flash memory chips. We have validated the model with experimental data collected by irradiating several commercial NAND flash memory chips from different technology nodes. We find that our analytical model can project bit errors at higher TID values (~ 20 krad(Si)) from measured data at lower TID values (<1 krad(Si)). Based on our model and the measured data, we have formulated basic design rules for using a commercial flash memory chip as a dosimeter. We discuss the impact of NAND chip-to-chip variability, noise margin and the intrinsic errors on the dosimeter design using detailed experimentation.

3-D NAND↗

On the Radiation Effects of Strontium Ions on Satellite Solar Cells in Low Earth Orbits

This study focuses on the radiation effects 19 of Sr + ions—generated from high-altitude nuclear explosions (HANE)—on satellite solar cells in low-Earth orbits (LEO). Along four selected satellite orbits, ion fluences are sampled inside the evolving Sr + distributions for days, determined from our newly developed HANE environment model. These fluences, along with the help of radiation transport codes including the MULASSIS and SRIM models, enable us to quantify the radiation damages by determining the values of total ionizing doses and the equivalent 1 MeV electron fluences for displacement damages. Comparing the dose values to existing experimental data, we conclude that HANE-generated Sr + ions have limited darkening effects to quartz solar cell coverglasses in LEO with apogees of 100s to 1000 km. In addition, with the extremely high equivalent fluences, we also conclude that these Sr+ ions may cause severe or even fatal displacement damage to exposed solar photovoltaic (PV) cells on satellites in LEO. The radiation effects of Sr + ions are much less significant for the orbits with high apogees beyond ten thousand km. We also conducted model parameter sensitivity studies on the charge exchange cross-sections, neutral atmosphere density profiles and explosion local time positions, and the above conclusions stay unchanged. The methodology developed in this study can be extended to other HANE-generated heavy ion species in the future.

14 SOLAR ENERGY↗

Advanced CMOS Reliability Update: Sub 20nm FinFET Assessment

Advances in FinFET design and fabrication enable manufacturing of denser, more compact integrated circuits (ICs) with substantially reduced leakage while shortening the channel-lengths. The same stress-induced leakage and breakdown degradation mechanisms that affect planar transistors also impact FinFET devices. Reliability concerns such as Bias Temperature Instability (BTI), Time Dependent Dielectric Breakdown (TDDB), and Hot Carrier Injection (HCI) become very important with changes to transistor geometry and fin sidewall crystal orientation. Recent testing has shown that FinFETs respond differently to radiation (radiation effects such as total ionizing dose) when compared to planar transistors. These reliability and radiation effects issues become very important when changing transistor geometry and scaling FinFETs towards smaller feature sizes (22-nm, 16-nm, 14- nm, 10-nm, and smaller critical dimensions). The comparable 2019 state of the art transistor densities in current high-volume manufacturing silicon-based foundries is 7-nm (ISMC, Samsung) and 10-nm (Intel) [www.anandtech.com,fuse.wikichip.org]. Released products include supporting components for the cellphone and commercial microprocessor markets respectively. Extensive development in the foundry industry is driving to a 5-nm technology node in late 2020.

47 OTHER INSTRUMENTATION↗

Radiation-Hardened Instrumentation, Sensors and Electronics

To assist the US Department of Energy in defining a course for Office of Nuclear Energy–funded radiation-hardened (rad-hard) electronics research, Oak Ridge National Laboratory (ORNL) will focus on three main tasks in FY21. The first task will investigate the survivability of silicon junction-gate field-effect transistors (Si-JFETs) through a 100 Mrad total ionizing dose (TID) experiment and report the test results. The second task will investigate wide bandgap (WBG)-based JFET devices and sources. The third task is an investigation into commercially available systems and components and will be performed to determine whether a standardized list of devices can be identified for reactor instrumentation application. If the devices are feasible, then this list will provide direction to designers and equipment suppliers for selection of components to meet specific reactor requirements.

42 ENGINEERING↗

CMS High Granularity Calorimeter ECON-D ASIC overview and radiation testing results

The Compact Muon Solenoid (CMS) Experiment’s High Granularity Calorimeter (HGCAL) upgrade replaces the CMS electromagnetic and hadronic endcap calorimeters in preparation for the high-rate and high-radiation environment of the High Luminosity LHC. To effectively use the over 6 million channels of this highly-segmented “imaging” calorimeter, CMS is pioneering very front-end data compression with the Endcap Concentrator (ECON) ASICs – the ECON-T for the trigger path and the ECON-D for the data path. These 65 nm CMOS ASICs are radiation tolerant (200 Mrad) and low-power (< 2.5 mW/channel). In June 2023, we received the first full-functionality prototype of the data path concentrator ASIC, the ECON-D-P1. This talk will present an overview of the ECON-D-P1, summarize functionality and system testing, and present results from both Total Ionizing Dose (TID) and Single Event Effect (SEE) testing campaigns completed in summer 2023, validating the ECON-D radiation tolerant performance.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Design and assembling status of the Mu2e electromagnetic calorimeter mechanical structures

The muon-to-electron conversion (Mu2e) experiment at Fermilab will search for the Charged Lepton Flavour Violating neutrino-less coherent conversion of a muon into an electron in the field of an aluminum nucleus. The observation of this process would be the unambiguous evidence of physics beyond the Standard Model. The detector has been designed as a state-of-the-art crystal calorimeter and employs 1348 pure Cesium Iodide (CsI) crystals readout by UV-extended silicon photosensors and fast front-end and digitization electronics. A design consisting of two identical annular matrices (named disks ) positioned at the relative distance of 70 cm, downstream the aluminum target along the muon beamline, satisfies the Mu2e physics requirements. The hostile Mu2e operational conditions, in terms of radiation levels (total ionizing dose of 12 krad and a neutron fluence of 5 10^{10} n/cm2 @ 1 MeVeq (Si)/y), magnetic field intensity (1 T) and vacuum level (10−4 Torr) have posed tight constraints on the design of the detector mechanical structures and materials choice. The support structure of the two 674 crystal matrices employs two aluminum hollow rings and parts made of open- cell vacuum-compatible carbon fiber. The photosensors and service front-end electronics for each crystal are assembled in a unique mechanical unit inserted in a machined copper holder. The 674 units are supported by a machined plate made of vacuum-compatible plastic material. The plate also integrates the cooling system made of a network of copper lines flowing a low temperature radiation-hard fluid and placed in thermal con- tact with the copper holders. The data acquisition electronics is hosted in aluminum custom crates positioned on the external lateral surface of the two disks. The crates also integrate the electronics cooling system. In this poster we will review the constraints on the calorimeter mechanical structures, the technological choices, and the status of assembling at Fermilab.

Pasciuto, D.↗

Van de Graaff Irradiation Studies of Oxygen Sensor and Hydrated Zirconia Sorbent

Commercial-scale production of Mo-99 demands a facility-wide assessment of radiation-induced degradation across process equipment, instrumentation, and purification media. Key factors— total ionizing dose, dose rate, radiolysis-driven chemistry, thermal loads, activation, and any neutron-related effects—should inform material selection, shielding, and component layout. Purification materials (sorbents, resins, filters, seals, housing) require particular attention to ensure that irradiation does not alter selectivity or capacity, generate fines, or introduce leachables that could compromise Mo-99 purity or downstream Tc-99m generator performance. Dose mapping, accelerated irradiation testing, and studies of extractables/leachables together provide the basis for setting maintenance, calibration, and replacement intervals and for qualifying materials that retain mechanical integrity, chemical compatibility, and radiopurity over their service life.

36 MATERIALS SCIENCE↗

Development, construction and qualification tests of the mechanical structures of the electromagnetic calorimeter of the Mu2e experiment at Fermilab

The “muon-to-electron conversion” (Mu2e) experiment at Fermilab will search for the Charged Lepton Flavour Violating neutrino-less coherent conversion of a muon into an electron in the field of an aluminum nucleus. The observation of this process would be the unambiguous evidence of physics beyond the Standard Model. Mu2e detectors comprise a straw-tracker, an electromagnetic calorimeter and an external veto for cosmic rays. The calorimeter provides excellent electron identification, complementary information to aid pattern recognition and track reconstruction, and a fast calorimetric online trigger. The detector has been designed as a state-of-the-art crystal calorimeter and employs 1340 pure Cesium Iodide (CsI) crystals readout by UV-extended silicon photosensors and fast front-end and digitization electronics. A design consisting of two identical annular matrices (named “disks”) positioned at the relative distance of 70 cm downstream the aluminum target along the muon beamline satisfies the Mu2e physics requirements.The hostile Mu2e operational conditions, in terms of radiation levels (total ionizing dose of 12 krad and a neutron fluence of 5x1010 n/cm2 @ 1 MeVeq (Si)/y), magnetic field intensity (1 T) and vacuum level (10$^{-4}$ Torr) have posed tight constraints on the design of the detector mechanical structures and materials choice. The support structure of the two 670 crystal matrices employs two aluminum hollow rings and parts made of open-cell vacuum-compatible carbon fiber. The photosensors and service front-end electronics for each crystal are assembled in a unique mechanical unit inserted in a machined copper holder. The 670 units are supported by a machined plate made of vacuum-compatible plastic material. The plate also integrates the cooling system made of a network of copper lines flowing a low temperature radiation-hard fluid and placed in thermal contact with the copper holders to constitute a low resistance thermal bridge. The data acquisition electronics is hosted in aluminum custom crates positioned on the external lateral surface of the two disks. The crates also integrate the electronics cooling system as lines running in parallel to the front-end system.The constraints on the calorimeter mechanical structures design, the development from the conceptual design to the specifications of all the structural components, the status of components production and the components quality assurance tests are presented.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗