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All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

Comparison of Detector Technologies for CAPS

In this paper, several different detectors are examined for use in a Comet/Asteroid Protection System (CAPS), a conceptual study for a possible future space-based system. Each detector will be examined for its future (25 years or more in the future) ability to find and track near-Earth Objects (NEOs) from a space-based detection platform. Within the CAPS study are several teams of people who each focus on different aspects of the system concept. This study s focus is on detection devices. In particular, evaluations on the following devices have been made: charge-coupled devices (CCDs), charge-injected devices (CIDs), superconducting tunneling junctions (STJs), and transition edge sensors (TESs). These devices can be separated into two main categories; the first category includes detectors that are currently being widely utilized, such as CCDs and CIDs. The second category includes experimental detectors, such as STJs and TESs. After the discussion of the detectors themselves, there will be a section devoted to the explicit use of these detectors with CAPS.

Stockum, Jana L.↗
NASA NTRS2009

Superconducting Hot-Electron Submillimeter-Wave Detector

A superconducting hot-electron bolometer has been built and tested as a prototype of high-sensitivity, rapid-response detectors of submillimeter-wavelength radiation. There are diverse potential applications for such detectors, a few examples being submillimeter spectroscopy for scientific research; detection of leaking gases; detection of explosive, chemical, and biological weapons; and medical imaging. This detector is a superconducting-transition- edge device. Like other such devices, it includes a superconducting bridge that has a low heat capacity and is maintained at a critical temperature (T(sub c)) at the lower end of its superconducting-transition temperature range. Incident photons cause transient increases in electron temperature through the superconducting-transition range, thereby yielding measurable increases in electrical resistance. In this case, T(sub c) = 6 K, which is approximately the upper limit of the operating-temperature range of silicon-based bolometers heretofore used routinely in many laboratories. However, whereas the response speed of a typical silicon- based laboratory bolometer is characterized by a frequency of the order of a kilohertz, the response speed of the present device is much higher characterized by a frequency of the order of 100 MHz. For this or any bolometer, a useful figure of merit that one seeks to minimize is (NEP)(tau exp 1/2), where NEP denotes the noise-equivalent power (NEP) and the response time. This figure of merit depends primarily on the heat capacity and, for a given heat capacity, is approximately invariant. As a consequence of this approximate invariance, in designing a device having a given heat capacity to be more sensitive (to have lower NEP), one must accept longer response time (slower response) or, conversely, in designing it to respond faster, one must accept lower sensitivity. Hence, further, in order to increase both the speed of response and the sensitivity, one must make the device very small in order to make its heat capacity very small; this is the approach followed in developing the present device.

Karasik, Boris↗
DOE OSTI2024

Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing

Abstract Superconducting niobium (Nb) thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride‐based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments is presented. In particular, secondary‐ion mass spectrometry, X‐ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb 2 O 5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power‐independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two‐level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Evolution of charge correlations in the hole-doped kagome superconductor CsV 3−𝑥⁢ Ti 𝑥 ⁢Sb 5

The interplay between superconductivity and charge correlations in the kagome metal CsV 3⁢ Sb 5 can be tuned by external perturbations such as doping or pressure. Here we present a study of charge correlations and superconductivity upon hole doping via Ti substitution on the V kagome sites in CsV 3−𝑥 ⁢Ti 𝑥 ⁢Sb 5 via synchrotron x-ray diffraction and scanning superconducting quantum interference device measurements. While the superconducting phase, as viewed via the vortex structure, remains conventional and unchanged across the phase diagram, the nature of charge correlations evolves as a function of hole doping from the first superconducting dome into the second superconducting dome. For Ti doping in the first superconducting dome, competing 2×2×2 and 2×2×4 supercells form within the charge density wave state and are suppressed rapidly with carrier substitution. In the second superconducting dome, no charge correlations are detected. Here, comparing these results to those observed for CsV 3 ⁢Sb 5−𝑥 ⁢Sn 𝑥 suggests important differences between hole doping via chemical substitution on the V and Sb sites, particularly in the disorder potential associated with each dopant.

Charge density waves↗
DOE OSTI2021

Quantum Sensing and its Potential for Nuclear Safeguards

Quantum sensing has the potential to provide ultrasensitive measurements of physical phenomenon. Unlike quantum computing, quantum sensing is available now, though in general at research laboratories. A notable commercially-available quantum sensing device is the ubiquitous Superconducting Quantum Interference Device (SQUID), which can measure faint magnetic fields such as found in the human brain. Quantum sensing is used for direct measurement of environmental phenomenon, such as electromagnetic fields and accelerations, which then are used for certain applications. For example, quantum sensing of accelerations is useful for Position, Navigation, and Timing (PNT) applications. It is not clear, however, how quantum sensing can be useful for nuclear safeguards. This report provides first a background in quantum sensing, followed by a survey of potential safeguards utilizations of quantum sensing. Several potential safeguards applications are identified and explored.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1998

A New Small Nano-Kelvin Resolution Thermometer for Low Temperature Experiments

A small, high resolution paramagnetic susceptibility thermometer was developed using a GdCl3 paramagnetic salt. The device uses a SQUID (Superconducting Quantum Interference Device) magnetometer to determine the temperature dependent magnetization of the salt in a magnetic field. The magnetic field is provided by a pair of small samarium cobalt permanent magnet disks situated inside the thermometer housing. The eliminates the need for a heavy, charging solenoid used in a conventional SQUID based magnetic thermometer system. This thermometer can resolve approximately 10 (exp -9)K near the liquid-gas critical point of He-3(approximately 3.31K). The drift rate of the thermometer was measured to be less than 2 x 10 (exp -13) K per second. This light weight thermometer (approximately 7 g) is a candidate for use in future low temperature Space Shuttle and International Space Station experiments. The present thermometer design easily permits a variety of magnetic materials for use in other applications.

Welander, Paul↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗
NASA NTRS2016

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗
NASA NTRS1990

Superconductivity applications for infrared and microwave devices; Proceedings of the Meeting, Orlando, FL, Apr. 19, 20, 1990

Various papers on superconductivity applications for IR and microwave devices are presented. The individual topics addressed include: pulsed laser deposition of Tl-Ca-Ba-Cu-O films, patterning of high-Tc superconducting thin films on Si substrates, IR spectra and the energy gap in thin film YBa2Cu3O(7-delta), high-temperature superconducting thin film microwave circuits, novel filter implementation utilizing HTS materials, high-temperature superconductor antenna investigations, high-Tc superconducting IR detectors, high-Tc superconducting IR detectors from Y-Ba-Cu-O thin films, Y-Ba-Cu0-O thin films as high-speed IR detectors, fabrication of a high-Tc superconducting bolometer, transition-edge microbolometer, photoresponse of YBa2Cu3O(7-delta) granular and epitaxial superconducting thin films, fast IR response of YBCO thin films, kinetic inductance effects in high-Tc microstrip circuits at microwave frequencies.

Bhasin, Kul B.↗
DOE OSTI2021

Method to create cuprate tunnel junctions with atomically sharp interfaces

In this work, we present a method for producing tunnel junctions from cuprate thin films grown by atomic layer-by-layer molecular beam epitaxy (ALL-MBE). Our approach utilizes microfabrication processing and relies on the atomically precise interfaces provided by the ALL-MBE synthesis technique. The method is suitable for a wide range of junction dimensions and materials and allows for more complex designs such as superconducting quantum interference devices and junction arrays. Fully superconducting electrodes ensure that the contact resistances in the devices created by this method remain very low.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Motivation and Development of a Compact Superconducting Accelerator for X-ray Medical Device Sterilization

Fermilab is developing a compact superconducting (CSRF) accelerator as a source of a high-power, high-energy electron beam to produce an x-ray beam comparable to $\geq$ 2 MCi of cobalt-60. As part of this development, we are presently assembling a 20 kW, 1.6 MeV prototype that incorporates the four enabling technologies described below. These technologies support a heat budget that is within the capacity of commercially available cryocoolers and eliminate the need for liquid cryogens. The use of superconducting technologies promises efficiencies, wall-plug to beam, of 80% or greater. A summary of the design and progress to date will be given. In addition, we will present a review of developments within the medical device sterilization industry that are motivating the development of this technology.

43 PARTICLE ACCELERATORS↗
DOE OSTI2026

Noise-Directed Adaptive Remapping for Integer Optimization: from qubits to (encoded) qudits

We extend Noise-Directed Adaptive Remapping (NDAR), a recently proposed heuristic meta-algorithm that leverages device noise as a computational resource, to optimization problems over discrete (integer) domains. While originally introduced for unconstrained binary optimization, the proposed generalization introduces additional gauge degrees of freedom at the logical level, such that the gauge transformation applied at each iteration is no longer unique, allowing tailoring to particular encodings or quantum hardware. We identify encoding-dependent requirements for NDAR beyond binary domains: feasibility of the noise attractor, existence of compatible gauge transformations that preserve an efficiently implementable circuit family, and a systematic way to select the transform to apply at each step. We analyze these criteria for qudit-native and for binary, one-hot, and domain-wall qubit encodings, using the Max-k-colorable subgraph problem as a running example. We demonstrate that these encodings can exhibit distinct advantages and tradeoffs when integrated within the NDAR framework, particularly in how noise-induced dynamics interact with the solution landscape and choice of encoding. Our results indicate that NDAR-guided noise considerations provide a new criterion for comparing device-level encoding choices for quantum optimization. Finally, we outline directions toward experimental realization in superconducting qudit devices and further algorithmic improvements.

Hadfield, Stuart [RIACS, Mtn. View] (ORCID:0000000↗
NASA NTRS1991

Superconductivity applications for infrared and microwave devices II; Proceedings of the Meeting, Orlando, FL, Apr. 4, 5, 1991

Topics discussed include thin-film technology, microwave transmission lines and resonators, microwave devices and circuits, infrared detectors and bolometers, and superconducting junctions. Papers are presented on possible enhancement in bolometric response using free-standing film of YBa2Cu3O(x), aging and surface instability in high-Tc superconductors, epitaxial Tl2Ba2CaCu2O8 thin films on LaAlO3 and their microwave device properties, the performance of stripline resonators using sputtered YBCO films, and a coplanar waveguide microwave filter of YBa2Cu3O7. Attention is also given to the performance characteristics of Y-Ba-Cu-O microwave superconducting detectors, high-Tc bolometer developments for planetary missions, infrared detectors from YBaCuO thin films, high-temperature superconductor junction technology, and submillimeter receiver components using superconducting tunnel junctions.

Heinen, Vernon O.↗
NASA NTRS1985

Four K refrigerators with a new compact heat exchanger

Two refrigerators have been developed which have nominal cpacities of 0.25M and 0.5W at 4.2K. These use standard two stage Displex sup R expanders and compressors combined with a new compact heat exchanger which is concentric with the expander cylinder. These refrigerators can be used to cool superconducting electronic devices by direct attachment to the 4K heat station, or they can be plugged into the neck of a liquid helium superconducting magnet cryostat where they can cool the radiation shields and reliquefy helium.

Longsworth, R. C.↗
DOE OSTI2024

SQMS Nanofabrication Taskforce: Towards Fabrication of High Coherence Superconducting Qubits

SQMS Nanofabrication Taskforce, which brings together experts in nanofabrication and materials science at the SQMS Center, has been launched to implement novel materials, substrates, and fabrication techniques for high coherence superconducting quantum devices. In a first coordinated effort, the Nanofabrication Taskforce developed fabrication processes to eliminate the lossy materials at surfaces and interfaces of superconducting qubits to enhance qubit coherence. The initial results of this study demonstrated T1 enhancement by almost an order of magnitude with best T1 s reaching ~ 600 $\mu$s. [1] We attribute this improvement to the replacement of lossy native Nb oxide layer with native Ta oxide, which is thinner and less disordered. we are now currently working on strategies with an aim towards moving qubit coherence times to millisecond timescales and beyond. The results of a systematic study will be presented to address substrate preparation, alternative materials as low loss platforms (Nb, Ta, and Re), novel non-oxide forming low loss capping layers such as proximitized Au, optimized qubit designs, and optimized Josephson junction materials, processing, and design.

Bal, Mustafa↗
NASA NTRS2005

Hot-Electron Photon Counters for Detecting Terahertz Photons

A document proposes the development of hot-electron photon counters (HEPCs) for detecting terahertz photons in spaceborne far-infrared astronomical instruments. These would be superconducting- transition-edge devices: they would contain superconducting bridges that would have such low heat capacities that single terahertz photons would cause transient increases in their electron temperatures through the superconducting- transition range, thereby yielding measurable increases in electrical resistance. Single devices or imaging arrays of the devices would be fabricated as submicron-sized bridges made from films of disordered Ti (which has a superconducting- transition temperature of .0.35 K) between Nb contacts on bulk silicon or sapphire substrates. In operation, these devices would be cooled to a temperature of .0.3 K. The proposed devices would cost less to fabricate and operate, relative to integrating bolometers of equal sensitivity, which must be operated at a temperature of approx. = 0.1 K.

Karasik, Boris↗
DOE OSTI2021

Parametrized Hamiltonian simulation using quantum optimal control

Analog quantum simulation offers a hardware-specific approach to studying quantum dynamics, but mapping a model Hamiltonian onto the available device parameters requires matching the hardware dynamics. In this work, we introduce a paradigm for quantum Hamiltonian simulation that leverages digital decomposition techniques and optimal control to perform analog simulation. We validate this approach by constructing the optimal analog controls for a superconducting transmon device to emulate the dynamics of an extended Bose-Hubbard model. We demonstrate the role of control time, digital error, and pulse complexity, and we explore the accuracy and robustness of these controls. We conclude by discussing the opportunity for implementing this paradigm in near-term quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Dancing the Quantum Waltz: Compiling Three-Qubit Gates on Four Level Architectures

Superconducting quantum devices are a leading technology for quantum computation, but they face several challenges. Gate errors, coherence errors and a lack of connectivity all contribute to low fidelity results. In particular, connectivity restrictions enforce a gate set that requires three-qubit gates to be decomposed into one- or two-qubit gates. This substantially increases the number of two-qubit gates that need to be executed. However, many quantum devices have access to higher energy levels. We can expand the qubit abstraction of |0〉 and |1〉 to a ququart which has access to the |2〉 and |3〉 state, but with shorter coherence times. This allows for two qubits to be encoded in one ququart, enabling increased virtual connectivity between physical units from two adjacent qubits to four fully connected qubits. This connectivity scheme allows us to more efficiently execute three-qubit gates natively between two physical devices.We present direct-to-pulse implementations of several three-qubit gates, synthesized via optimal control, for compilation of three-qubit gates onto a superconducting-based architecture with access to four-level devices with the first experimental demonstration of four-level ququart gates designed through optimal control. We demonstrate strategies that temporarily use higher level states to perform Toffoli gates and always use higher level states to improve fidelities for quantum circuits. We find that these methods improve expected fidelities with increases of 2x across circuit sizes using intermediate encoding, and increases of 3x for fully-encoded ququart compilation.

Litteken, Andrew↗