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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Constructing non-Abelian quantum spin liquids using combinatorial gauge symmetry

We construct Hamiltonians with only 1- and 2-body interactions that exhibit an exact non-Abelian gauge symmetry (specifically, combinatiorial gauge symmetry). Our spin Hamiltonian realizes the quantum double associated to the group of quaternions. It contains only ferromagnetic and anti-ferromagnetic ZZ Z Z interactions, plus longitudinal and transverse fields, and therefore is an explicit example of a spin Hamiltonian with no sign problem that realizes a non-Abelian topological phase. In addition to the spin model, we propose a superconducting quantum circuit version with the same symmetry.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Microwave dielectric properties of LiNbO$_{\mathbf{3}}$ and AlN at millikelvin temperatures and single-photon power

Electro-optic materials are paramount to achieving efficient and reliable microwave-optical signal transduction in the quantum regime. It is of great interest to investigate the performance of these materials at the quantum level and at cryogenic temperatures to assess their compatibility with superconducting circuit-based quantum systems. In this work, we present a detailed study of the microwave electric properties of single-crystal bulk LiNbO$_{3}$ and AlN at millikelvin temperatures and at the single-photon level. We characterize the materials' dielectric loss tangent throughout a wide range of electromagnetic power levels in a temperature range from a few tens of millikelvin to above 1~K. Our findings indicate that both materials' loss tangent behavior is consistent with the two-level system model up to a certain power threshold, beyond which it increases logarithmically with power. This suggests that two-level system loss mechanisms dominate at the single-photon level, while additional loss channels become relevant at higher powers and temperatures.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
NASA NTRS1989

Measurements of complex permittivity of microwave substrates in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

A knowledge of the dielectric properties of microwave substrates at low temperatures is useful in the design of superconducting microwave circuits. Results are reported for a study of the complex permittivity of sapphire (Al2O3), magnesium oxide (MgO), silicon oxide (SiO2), lanthanum aluminate (LaAlO3), and zirconium oxide (ZrO2), in the 20 to 300 Kelvin temperature range, at frequencies from 26.5 to 40.0 GHz. The values of the real and imaginary parts of the complex permittivity were obtained from the scattering parameters, which were measured using a HP-8510 automatic network analyzer. For these measurements, the samples were mounted on the cold head of a helium gas closed cycle refrigerator, in a specially designed vacuum chamber. An arrangement of wave guides, with mica windows, was used to connect the cooling system to the network analyzer. A decrease in the value of the real part of the complex permittivity of these substrates, with decreasing temperature, was observed. For MgO and Al2O3, the decrease from room temperature to 20 K was of 7 and 15 percent, respectively. For LaAlO3, it decreased by 14 percent, for ZrO2 by 15 percent, and for SiO2 by 2 percent, in the above mentioned temperature range.

Miranda, Felix A.↗
NASA NTRS1990

Complex permittivity of lanthanum aluminate in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

Dielectric constants of microwave substrates are required in the design of superconducting microwave circuits at various temperatures. In this paper, the results are reported of a study of the complex permittivity of the newly developed lanthanum aluminate (LaAlO3) substrate, in the 20 to 300 K temperature range at frequencies from 26.5 to 40.0 GHz. The value of the complex permittivity was obtained by measuring the sample scattering parameters using a microwave waveguide technique. It is observed that, while the dielectric constant did not change appreciably with frequency, its value decreased by approximately 14 percent from room temperature to 20 K.

Miranda, F. A.↗
NASA NTRS1990

Measurements of complex permittivity of microwave substrates in the 20 to 300 K temperature range from 26.5 to 40.0 GHz

A knowledge of the dielectric properties of microwve substrates at low temperatures is useful in the design of superconducting microwave circuits. Results are reported for a study of the complex permittivity of sapphire (Al2O3), magnesium oxide (MgO), silicon oxide (SiO2), lanthanum aluminate (LaAlO3), and zirconium oxide (ZrO2), in the 20 to 300 Kelvin temperature range, at frequencies from 26.5 to 40.0 GHz. The values of the real and imaginary parts of the complex permittivity were obtained from the scattering parameters, which were measured using an HP-8510 automatic network analyzer. For these measurements, the samples were mounted on the cold head of a helium gas closed cycle refrigerator, in a specially designated vacuum chamber. An arrangement of wave guides, with mica windows, was used to connect the cooling system to the network analyzer. A decrease in the value of the real part of the complex permittivity of these substrates, with decreasing temperature, was observed. For MgO and Al2O3, the decrease from room temperature to 20 K was of 7 and 15 percent, respectively. For LaAlO3, it decreased by 14 percent, for ZrO2 by 15 percent, and for SiO2 by 2 percent, in the above mentioned temperature range.

Miranda, Felix A.↗
NASA NTRS2005

Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for patterning can limit their absorption at THz frequencies and their heat capacity can be high. patterned absorber structures that offer low heat capacity, absence of aging, and uniform, predictable behavior at THz frequencies. We have correlated DC electrical and THz optical measurements of a series of implanted layers and studied their frequency dependence of optical absorption from .3 to 10 THz at cryogenic temperatures. We have modeled the optical response to determine the suitability of the implanted silicon resistor as a function of resistance in the range 10 Ohms/sq to 300 Ohms/sq.

Chervenak, J. A.↗
NASA NTRS2013

NASA Tech Briefs, December 2013

Topics include: Microwave Kinetic Inductance Detector With; Selective Polarization Coupling; Flexible Microstrip Circuits for; Superconducting Electronics; CFD Extraction Tool for TecPlot From DPLR Solutions; RECOVIR Software for Identifying Viruses; Enhanced Contact Graph Routing (ECGR) MACHETE Simulation Model; Orbital Debris Engineering Model (ORDEM) v.3; Scatter-Reducing Sounding Filtration Using a Genetic Algorithm and Mean Monthly Standard Deviation; Thermo-Mechanical Methodology for Stabilizing Shape Memory Alloy Response; Hermetic Seal Designs for Sample Return Sample Tubes; Silicon Alignment Pins: An Easy Way To Realize a Wafer-to-Wafer Alignment; Positive-Buoyancy Rover for Under Ice Mobility; Electric Machine With Boosted Inductance to Stabilize Current Control; International Space Station-Based Electromagnetic Launcher for Space Science Payloads; Advanced Hybrid Spacesuit Concept Featuring Integrated Open Loop and Closed Loop Ventilation Systems; Data Quality Screening Service.

Source record↗
DOE OSTI2023

Characterization of superconducting through-silicon vias as capacitive elements in quantum circuits

The large physical size of superconducting qubits and their associated on-chip control structures presents a practical challenge toward building a large-scale quantum computer. In particular, transmons require a high-quality-factor shunting capacitance that is typically achieved by using a large coplanar capacitor. Other components, such as superconducting microwave resonators used for qubit state readout, are typically constructed from coplanar waveguides, which are millimeters in length. Here, we use compact superconducting through-silicon vias to realize lumped-element capacitors in both qubits and readout resonators to significantly reduce the on-chip footprint of both of these circuit elements. We measure two types of devices to show that through-silicon vias are of sufficient quality to be used as capacitive circuit elements and provide a significant reduction in size over existing approaches.

Physics↗
NASA NTRS1984

Cold electronics: An overview

Generally speaking, several roles are seen for low temperatures in electronics: As a means of extracting better performance from existing technology, avoiding expense and delay required for the advances in design or fabrication which would be needed to achieve the same performance at room temperature. As a necessity in the quest for improved performance, to counteract detrimental effects which arises as technology is pushed to extremes. As an opportunity to take advantage of effects made available by low temperature operation, and to develop new devices based on them. The electronic devices and circuits considered are those based on semiconductivity. Superconductive devices and circuits are not included.

Kirschman, R.↗
NASA NTRS2019

Atomic Layer Deposition Josephson Junctions for Cryogenic Circuit Applications

Superconducting-insulating-superconducting (SIS) trilayers have been produced for Josephson Junction fabrication by thermal atomic layer deposition (ALD) processes. The trilayers are composed of alternating layers of Ti0.4N0.6/Al2O3/ Ti0.4N0.6, deposited at 450°C, in a thermal ALD reactor on Al2O3-coated silicon. The conformal nature of the ALD process provides excellent step coverage of superconducting and insulating films. The film thickness of a single ALD cycle being one mono-layer, allows us to precisely control the tunnel-barrier insulator thickness by counting the number of ALD cycles during the insulator deposition step. Tunnel-junctions with critical current 500 A/cm2 are reported. Fabrication of Josephson Junctions and progress toward development of a single-element ALD Superconducting Quantum Interference Device (SQUID) will be discussed

Atomic Layer Definition↗
DOE OSTI2025

Stress accommodation in nanoscale dolan bridges designed for superconducting qubits

Josephson junctions are the principal circuit element in numerous superconducting quantum information devices and can be readily integrated into large-scale electronics. However, device integration at the wafer scale necessarily depends on having a reliable, high-fidelity, and high-yield fabrication method for creating Josephson junctions. When creating Al/AlO x based superconducting qubits, the standard Josephson junction fabrication method relies on a sub-micron suspended resist bridge, known as a Dolan bridge, which tends to be particularly fragile and can often times fracture during the resist development process, ultimately resulting in device failure. In this work, we demonstrate a unique Josephson junction lithography mask design that incorporates stress-relief channels. Our simulation results show that the addition of stress-relief channels reduces the lateral stress in the Dolan bridge by more than 70% for all the bridge geometries investigated. In practice, our novel mask design significantly increased the survivability of the bridge during device processing, resulting in 100% yield for over 100 Josephson junctions fabricated.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2011

AC Read-Out Circuits for Single Pixel Characterization of TES Microcalorimeters and Bolometers

SRON is developing Frequency Domain Multiplexing (FDM) for the read-out of transition edge sensor (TES) soft x-ray microcalorimeters for the XMS instrument of the International X-ray Observatory and far-infrared bolometers for the SAFARI instrument on the Japanese mission SPICA. In FDM the TESs are AC voltage biased at frequencies from 0.5 to 6 MHz in a superconducting LC resonant circuit and the signal is read-out by low noise and high dynamic range SQUIDs amplifiers. The TES works as an amplitude modulator. We report on several AC bias experiments performed on different detectors. In particular, we discuss the results on the characterization of Goddard Space Flight Center x-ray pixels and SRON bolometers. The paper focuses on the analysis of different read-out configurations developed to optimize the noise and the impedance matching between the detectors and the SQUID amplifier. A novel feedback network electronics has been developed to keep the SQUID in flux locked loop, when coupled to superconducting high Q circuits, and to optimally tune the resonant bias circuit. The achieved detector performances are discussed in view of the instrument requirement for the two space missions.

Gottardi, L.↗
DOE OSTI2023

G4CMP: Condensed matter physics simulation using the G$\scriptsize{\mathrm{EANT}}$4 toolkit

G4CMP simulates phonon and charge transport in cryogenic semiconductor crystals using the Geant4 toolkit. The transport code is capable of simulating the propagation of acoustic phonons as well as electron and hole charge carriers. Herein processes for anisotropic phonon propagation, oblique charge-carrier propagation, and phonon emission by accelerated charge carriers are included. The simulation reproduces theoretical predictions and experimental observations such as phonon caustics, heat-pulse propagation times, and mean charge-carrier drift velocities. In addition to presenting the physics and features supported by G4CMP, this report outlines example applications from the dark matter and quantum information science communities. These communities are applying G4CMP to model and design devices for which the energy transported by phonons and charge carriers is germane to the performance of superconducting instruments and circuits placed on silicon and germanium substrates. The G4CMP package is available to download from GitHub: github.com/kelseymh/G4CMP.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2007

Kilopixel Pop-Up Bolometer Arrays for the Atacama Cosmology Telescope

The recently deployed Atacama Cosmology Telescope (ACT) anticipates first light on its kilopixel array of close-packed transition-edge-sensor bolometers in November of 2007. The instrument will represent a full implementation of the next-generation, large format arrays for millimeter wave astronomy that use superconducting electronics and detectors. Achieving the practical construction of such an array is a significant step toward producing advanced detector arrays for future SOFIA instruments. We review the design considerations for the detector array produced for the ACT instrument. The first light imager consists of 32 separately instrumented 32-channel pop-up bolometer arrays (to create a 32x32 filled array of mm-wave sensors). Each array is instrumented with a 32-channel bias resistor array, Nyquist filter array, and time-division SQUID multiplexer. Each component needed to be produced in relatively large quantities with suitable uniformity to meet tolerances for array operation. An optical design was chosen to maximize absorption at the focal plane while mitigating reflections and stray light. The pop-up geometry (previously implemented with semiconducting detectors and readout on the SHARC II and HAWC instruments) enabled straightforward interface of the superconducting bias and readout circuit with the 2D array of superconducting bolometers. The array construction program balanced fabrication challenges with assembly challenges to deliver the instrument in a timely fashion. We present some of the results of the array build and characterization of its performance.

Chervenak, J. A.↗
DOE OSTI2025

Parameter extraction for a SPICE model of an hTron superconducting thermal switch

Efficiently simulating large circuits is crucial to the development of superconducting nanowire-based electronics. However, current simulation tools for this technology are not adapted to the scaling of circuit size and complexity. We focus on the multilayered heater-nanocryotron (hTron), a promising superconducting nanowire-based switch used in applications such as superconducting nanowire single-photon detector readout. Previously, the hTron was modeled using traditional finite-element methods, which fall short in simulating systems at a larger scale. An empirical-based method would be better adapted to this task, enhancing both simulation speed and agreement with experimental data. In this work, we perform switching current and activation delay measurements on 17 hTron devices. We then develop a method for extracting physical fitting parameters used to characterize the devices. We build a SPICE behavioral model that reproduces the static and transient device behavior using these parameters, and validate it by comparing its performance to a model developed in prior work, showing an improvement in simulation time by several orders of magnitude. Furthermore, our model provides circuit designers with a tool to help understand the hTron’s behavior during all design stages, thus enabling broader use of the hTron across various new areas of application.

Caloritronics↗
DOE OSTI2021

Superconducting Coupler with Exponentially Large On:Off Ratio

Tunable two-qubit couplers offer an avenue to mitigate errors in multiqubit superconducting quantum processors. However, most couplers achieve this by fine tuning circuit parameters and often target specific couplings, such as the spurious ZZ interaction. We introduce a superconducting coupler that alleviates these limitations by suppressing all two-qubit interactions with an exponentially large on:off ratio and without the need for fine tuning. Our approach is based on a bus mode supplemented by an ancillary nonlinear resonator mode. Driving the ancillary mode leads to a coupler-state-dependent field displacement in the resonator that, in turn, results in an exponential suppression of real and virtual two-qubit interactions with respect to the drive power. A superconducting circuit implementation supporting the proposed mechanism is presented.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗