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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

In Situ Strain Tuning of the Dirac Surface States in Bi 2 Se 3 Films

Elastic strain has the potential for a controlled manipulation of the band gap and spin-polarized Dirac states of topological materials, which can lead to pseudomagnetic field effects, helical flat bands, and topological phase transitions. However, practical realization of these exotic phenomena is challenging and yet to be achieved. Here we show that the Dirac surface states of the topological insulator Bi 2 Se 3 can be reversibly tuned by an externally applied elastic strain. Performing in situ X-ray diffraction and in situ angle-resolved photoemission spectroscopy measurements during tensile testing of epitaxial Bi 2 Se 3 films bonded onto a flexible substrate, we demonstrate elastic strains of up to 2.1% and quantify the resulting changes in the topological surface state. Our study establishes the functional relationship between the lattice and electronic structures of Bi 2 Se 3 and, more generally, demonstrates a new route toward momentum-resolved mapping of strain-induced band structure changes.

Flötotto, David↗
DOE OSTI2014

Transient x-ray diffraction with simultaneous imaging under high strain-rate loading

Real time, in situ, multiframe, diffraction, and imaging measurements on bulk samples under high and ultrahigh strain-rate loading are highly desirable for micro- and mesoscale sciences. We present an experimental demonstration of multiframe transient x-ray diffraction (TXD) along with simultaneous imaging under high strain-rate loading at the Advanced Photon Source beamline 32ID. The feasibility study utilizes high strain-rate Hopkinson bar loading on a Mg alloy. The exposure time in TXD is 2–3 μs, and the frame interval is 26.7–62.5 μs. Various dynamic deformation mechanisms are revealed by TXD, including lattice expansion or compression, crystal plasticity, grain or lattice rotation, and likely grain refinement, as well as considerable anisotropy in deformation. Dynamic strain fields are mapped via x-ray digital image correlation, and are consistent with the diffraction measurements and loading histories.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

High-temperature deformation behavior of the extruded Ti-22Al-25Nb alloy fabricated by powder metallurgy

Highlights: • The high-temperature deformation behavior of the extruded Ti-22Al-25Nb alloy was analyzed. • A true strain-compensated Arrhenius-type constitutive model was established. • The processing maps of true strains 0.2, 0.4, and 0.6 were constructed to optimize the processing parameters. • Microstructural evolution and deformation mechanism in different conditions were explained. - Abstract: The hot-deformation behavior of the extruded Ti-22Al-25Nb alloy was investigated by compression testing in the 1213–1333 K temperature range, under a 0.001–1.0 s{sup −1} strain-rate range. The activation energy, Q, at a deformation strain of 0.3, was calculated to be 574.80 kJ mol{sup −1}. A strain-compensated Arrhenius-type constitutive model was established for this alloy, with an average absolute relative error (AARE) and correlation coefficient (R) of 7.64% and 0.994, respectively. Based on the dynamic materials model (DMM), processing maps were developed by combining the power dissipation and instability maps. An instability region was identified in the 1213–1278 K temperature range and 0.022–1.0 s{sup −1} strain-rate range. The microstructure of specimens deformed under different conditions were analyzed to characterize the corresponding deformation mechanisms. The main softening mechanisms in the stability regions were dynamic recrystallization (DRX) and dynamic globularization. The grain size of the specimen deformed at 1313 K/0.001 s{sup −1} was approximately 15.2 μm.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Linking Domain Structure Evolution at a Grain Boundary to Piezoelectric Response via Nano‐Diffraction

Electric-field-induced domain structure switching in a 1 𝜇⁢m -thick Pb 0.99 (Zr 0.45 Ti 0.55 ) 0.98 Nb 0.02 O 3 (Nb-doped PZT) bicrystal film was characterized in situ via nano-focused synchrotron diffraction. The epitaxial film was deposited on a (100) SrTiO 3 bicrystal substrate. The changes in domain structure were mapped within a 5 𝜇⁢m × 5 𝜇⁢m area at and around an in-plane tilt-type (23.6°) grain boundary with 50 nm spatial resolution. Rocking curves collected at each point of the mapped area provided the ability to reconstruct spatially-varying three-dimensional (3D) reciprocal space maps around the grain boundary. The 3D reciprocal space maps reveal how different tilted 𝑎 -type domain variants interact with the grain boundary as a function of increasing electric field. Initially, a subset of 𝑎 -type domain variants with their polarization vectors largely orthogonal to the grain boundary were found in greater abundance within 570 nm of the grain boundary, possibly due to X-ray beam-induced local increases in the electrical conductivity, but after the coercive field was exceeded, reconfiguration of the ferroelastic domains was observed. The spatially-varying reciprocal space maps also facilitated evaluation of the strain field across the mapped area, along with 𝑑 33,𝑓 . Significant spatial heterogeneity of strain and 𝑑 33,𝑓 are observed, especially at the coercive field, which was attributed to maintaining deformation compatibility and correlated ferroelastic switching.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Self-consistent modelling of electrochemical strain microscopy in mixed ionic-electronic conductors: Nonlinear and dynamic regimes

The frequency dependent Electrochemical Strain Microscopy (ESM) response of mixed ionic-electronic conductors is analyzed within the framework of Fermi-Dirac statistics and the Vegard law, accounting for steric effects from mobile donors. The emergence of dynamic charge waves and nonlinear deformation of the surface in response to bias applied to the tip-surface junction is numerically explored. The 2D maps of the strain and concentration distributions across the mixed ionic-electronic conductor and bias-induced surface displacements are calculated. The obtained numerical results can be applied to quantify the ESM response of Li-based solid electrolytes, materials with resistive switching, and electroactive ferroelectric polymers, which are of potential interest for flexible and high-density non-volatile memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Energy-Resolved Neutron Imaging for Reconstruction of Strain Introduced by Cold Working

Energy-resolved neutron transmission imaging is used to reconstruct maps of residual strains in drilled and cold-expanded holes in 5-mm and 6.4-mm-thick aluminum plates. The possibility of measuring the positions of Bragg edges in the transmission spectrum in each 55 × 55 µm2 pixel is utilized in the reconstruction of the strain distribution within the entire imaged area of the sample, all from a single measurement. Although the reconstructed strain is averaged through the sample thickness, this technique reveals strain asymmetries within the sample and thus provides information complementary to other well-established non-destructive testing methods.

Tremsin, Anton (ORCID:0000000324437576)↗
DOE OSTI2019

A Systematic Study on the Dynamic Softening Behavior of a Heat-Resistant Alloy Considering Thermal and Microstructural Effects

Deep understanding of the relationships among flow softening behaviors, microstructure evolution and process parameters is an essential issue due to the varied strain rate and temperature in industrial hot working schedules. In this research, substantial hot compression tests of a SNCrW heat-resistant alloy were conducted to quantitatively investigate the extrinsic dynamic flow softening behaviors and intrinsic grain size evolution. The thermal softening ratio (TSR) and microstructural softening ratio (MSR) were introduced to, respectively, characterize the degree of deformation heating-induced thermal softening and dynamic recrystallization-induced microstructural softening, respectively. To obtain more accurate results, the TSR was calculated with an improved algorithm that considered strain effects. Additionally, a 3D TSR map and MSR map of the SNCrW heat-resistant alloy were constructed to study the response relationships between thermal softening or microstructural softening and the deformation parameters. In addition, a superimposed contour map of the average grain size on the MSR map was developed to reveal the relationships between microstructural evolution and the macromechanical response. The results show that the grain size of the SNCrW heat-resistant alloy exhibits an inverse correlation with the MSR and is slightly correlated with thermal softening.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effect of Annealing Conditions on Recovery of Lattice Damage in a High-Energy-Implanted 4H-SiC Superjunction PIN Diode

A high energy ion implantation system has been recently developed at the Tandem Van de Graaff facility at Brookhaven National Laboratory with tunable energy to 150 MeV capable of multi-step, deep implantation in 4H-SiC wafers with dopant atoms, such as B, P, Al, and N. Medium and high voltage devices with deep junctions can be fabricated using this system. Lattice strain introduced by the implantation process needs to be recovered and dopant atoms activated by appropriate annealing process as the device performance is strongly associated with the extent of recovery of the lattice. Using Synchrotron X-ray Rocking Curve Topography (SXRCT) and Reciprocal Space Mapping (RSM), the strain induced by high energy implantation of Al and N in 4H-SiC in different patterns are measured and mapped. It is observed that the strain levels correlate with the total fluence levels. PiN diodes fabricated on these implanted wafers were then annealed at temperatures ranging from 1700 °C to 2000 °C for 60 min. The SXRCT and RSM analysis of the annealed samples suggests that for the same annealing duration, higher temperature leads to better lattice recovery.

43 PARTICLE ACCELERATORS↗
DOE OSTI2020

Revealing multiple classes of stable quantum emitters in hexagonal boron nitride with correlated optical and electron microscopy

Defects in hexagonal boron nitride (hBN) exhibit high-brightness, room-temperature quantum emission, but their large spectral variability and unknown local structure challenge their technological utility. Here, we directly correlate hBN quantum emission with local strain using a combination of photoluminescence (PL), cathodoluminescence (CL) and nanobeam electron diffraction. Across 40 emitters, we observe zero phonon lines (ZPLs) in PL and CL ranging from 540 to 720 nm. CL mapping reveals that multiple defects and distinct defect species located within an optically diffraction-limited region can each contribute to the observed PL spectra. Local strain maps indicate that strain is not required to activate the emitters and is not solely responsible for the observed ZPL spectral range. Instead, at least four distinct defect classes are responsible for the observed emission range, and all four classes are stable upon both optical and electron illumination. Our findings offer a foundation for future atomic-scale optical characterization of colour centres.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Deformation Twinning of a Silver Nanocrystal under High Pressure

Within a high-pressure environment, crystal deformation is controlled by complex processes such as dislocation motion, twinning, and phase transitions, which change materials' microscopic morphology and alter their properties. Understanding a crystal's response to external stress provides a unique opportunity for rational tailoring of its functionalities. It is very challenging to track the strain evolution and physical deformation from a single nanoscale crystal under high-pressure stress. Here, we report an in situ three-dimensional mapping of morphology and strain evolutions in a single-crystal silver nanocube within a high-pressure environment using the Bragg Coherent Diffractive Imaging (CDI) method. We observed a continuous lattice distortion, followed by a deformation twining process at a constant pressure. The ability to visualize stress-introduced deformation of nanocrystals with high spatial resolution and prominent strain sensitivity provides an important route for interpreting and engineering novel properties of nanomaterials.

coherent diffractive imaging↗
DOE OSTI2020

Mechanoadaptive strain and functional osseointegration of dental implants in rats

Spatiotemporal implant-bone biomechanics and mechanoadaptive strains in peri-implant tissue are poorly understood. Physical and chemical characteristics of an implant-bone complex (IBC) were correlated in three-dimensional space (along the length and around a dental implant) to gather insights into time related integration of the implant with the cortical portion of a jaw bone in a rat. Rats (N = 9) were divided into three experimental groups with three rats per time point; 3-, 11-, and 24-day. All rats were fed crumbled hard pellets mixed with water (soft-food diet) for the first 3 days followed by a hard-food diet with intact hard-food pellets (groups of 11- and 24-day only). Biomechanics of the IBCs harvested from rats at each time point was evaluated by performing mechanical testing in situ in tandem with X-ray imaging. The effect of physical association (contact area) of a loaded implant with adapting peri-implant tissue, and resulting strain within was mapped by using digital volume correlation (DVC) technique. The IBC stiffness at respective time points was correlated with mechanical strain in peri-implant tissue. Results illustrated that IBC stiffness at 11-day was lower than that observed at 3-day. However, at 24-day, IBC stiffness recovered to that which was observed at 3-day. Furthermore, correlative microscopy and spectroscopy illustrated that the lower IBC stiffness was constituted by softer and less mineralized peri-implant tissue that contained varying expressions of osteoconductive elements. Lower IBC stiffness observed at 11-day was constituted by less mineralized peri-implant tissue with osteoconductive elements that included phosphorus (P) which was co-localized with higher expression of zinc (Zn), and lower expression of calcium (Ca). Higher IBC stiffness at 24-day was constituted by mineralized peri-implant tissue with higher expressions of osteoconductive elements including Ca and P, and lower expressions of Zn. These spatiotemporal correlative maps of peri-implant tissue architecture, heterogeneous distribution of mineral density, and elemental colocalization underscore mechanoadaptive physicochemical properties of peri-implant tissue that facilitate functional osseointegration of an implant. These results provided insights into 1) plausible "prescription" of mechanical loads as an osteoinductive "therapeutic dose" to encourage osteoconductive elements in the peri-implant tissue that would facilitate functional osseointegration of the implant; 2) a "critical temporal window" between 3 and 11 days, and perhaps it is this acute phase during which key candidate regenerative molecules can be harnessed to accelerate osseointegration of an implant under load.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2021

Local Lattice Deformation of Tellurene Grain Boundaries by Four-Dimensional Electron Microscopy

Two-dimensional (2D) tellurene is a promising competitor for the fabrication of ultrathin optoelectronic devices belonging to a new family of monoelemental 2D materials. Furthermore, the precise fabrication and characterization of tellurene and its lattice defects is of utmost importance to determine device reliability and predict functionality, yet it remains experimentally challenging. The rapid growth of the four-dimensional scanning transmission electron microscopy (4D-STEM) technique as well as postprocessing tools now allows for structural analysis with nanometer-scale resolution over a broad range of length scales. Here, we use 4D-STEM to reveal the three-dimensional (3D) atomic structure of the characteristic grain boundary in 2D tellurium formed through a new microwave-enabled chemical self-assembly. Strain and lattice parameter maps permit the reconstruction of the roughness of the grain boundary and suggest that its formation is promoted by a wedge of helical atomic chains along the [0001] crystallographic direction. The observation of wrinkles at the grain boundary is found to be the dominant relaxation mechanism. Insights into the formation mechanism are elucidated by mapping the lattice parameters as the first demonstration of local in-plane and out-of-plane unit cell variation in a nanometer-by-nanometer real-space array.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Strain relaxation in epitaxial SrRuO{sub 3} thin films on LaAlO{sub 3} substrates

Strain relaxation behavior of epitaxial SrRuO{sub 3} thin films on (001) LaAlO{sub 3} substrates was investigated using high resolution X-ray diffraction. Lattice distortion and dislocation densities were systematically studied with samples under different growth conditions. Reciprocal space maps reveal different strain relaxation behavior in SrRuO{sub 3} thin films grown at different temperatures. Two kinds of strain relaxation mechanisms were proposed to understand the growth dynamics, including the evolution of threading dislocations and the tilt of crystalline planes.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Effect of Mn addition on deformation behaviour of 23% Cr low nickel duplex stainless steel

Highlights: • Increasing Mn content obviously affects dynamic softening behaviour of flow curves. • More complete austenite DRX occurred with middle Mn addition of 10.3% at 1 s{sup −1}. • The constitutive equations for different Mn addition alloys are developed. • The values of activation energy and Z parameter are lowest with middle Mn addition. • Different Mn addition processing maps with increasing strain were established. - Abstract: Isothermal compression testing of 23% Cr low nickel duplex stainless steels, with different Mn concentrations, was investigated in the temperature range of 1173–1423 K, the strain rate range of 0.01–10 s{sup −1} and with a height reduction of 70%. Increasing the Mn content from 6.3 to 14.1% affected the deformation dynamic softening behaviour of flow curves at lower temperature and higher strain rate. It was also observed that increasing the deformation stain rate contributed to flow softening, and was caused by dynamic recrystallization (DRX) as a function of Mn addition. Deformation microstructure analysis demonstrated that more complete austenite phase DRX occurred with 10.3% Mn addition than that with 6.3% Mn addition at 1 s{sup −1}, but an excessive Mn content of 14.1% was unfavourable due to the increase of austenite fraction and stacking fault energy enhancement. Increasing the strain rate to 10 s{sup −1} promoted austenite phase DRX at 1323 K with the Mn addition under large strain. Meanwhile, the ferrite phase DRX occurred at 1173 K/1–10 s{sup −1} with 6.3% Mn, and was weakened with higher Mn addition. Compared to the 6.3% and 14.1% Mn, continuous DRX occurred at 1323 K/1 s{sup −1} with 10.3% Mn, due to the larger fraction of high angle misorientations. The values for the activation energy and Zener–Hollomon parameter decreased with Mn addition from 6.3 to 10.3%, and then increased with a higher Mn addition of 14.1%, indicating that a proper content of Mn addition can reduce the thermal deformation resistance and promote DRX. The constitutive equations for different Mn addition alloys were developed using a hyperbolic sine equation. Processing maps with different Mn addition for the strains of 0.3, 0.6 and 1.2 were established. The 10.3% Mn content sample corresponded to the lowest instability region, implying that the workability was improved with the middle Mn addition.

36 MATERIALS SCIENCE↗
NASA NTRS1985

The vector structure of active magnetic fields

Observations are needed to show the form of the strains introduced into the fields above the surface of the Sun. The longitudinal component alone does not provide the basic information, so that it has been necessary in the past to use the filamentary structure observed in H sub alpha to supplement the longitudinal information. Vector measurements provide the additional essential information to determine the strains, with the filamentary structure available as a check for consistency. It is to be expected, then, that vector measurements will permit a direct mapping of the strains imposed on the magnetic fields of active regions. It will be interesting to study the relation of those strains to the emergence of magnetic flux, flares, eruptive prominences, etc. In particular we may hope to study the relaxation of the strains via the dynamical nonequilibrium.

Parker, E. N.↗
DOE OSTI2021

Strain-Induced Lateral Heterostructures in Patterned Semiconductor Nanomembranes for Micro- and Optoelectronics

The ability to tailor the energy band lineup of semiconductor materials plays a key role in the development of many electronic and optoelectronic devices and normally relies on heteroepitaxy. In this work, we report a different method, based on strain engineering, for the controlled introduction of variations in bandgap energy with lateral position in thin films. External stress is applied on Ge nanomembranes stacked with an array of amorphous-Si pillars in order to create a non-uniform strain (and therefore bandgap energy) distribution commensurate with the sample thickness variations. The resulting strain profiles are mapped using Bragg diffraction with a hard X-ray probe featuring nanoscale spatial resolution. Compared with traditional heterostructures grown by epitaxial techniques, these strain-engineered samples involve a single chemical composition and are not limited in the choice of compatible materials by any restriction imposed by lattice-matching requirements. Furthermore, their energy band lineups can be patterned in nearly arbitrary shapes using nanolithography to control the thickness profile and can be tuned actively by varying the applied stress. As a result, these structures are attractive for a wide range of device applications (including lasers, LEDs, solar cells, and thermoelectrics) that require complex heterostructure lineups with multiple bandgap energies.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Separating strain from composition in unit cell parameter maps obtained from aberration corrected high resolution transmission electron microscopy imaging

Based on the evaluation of lattice parameter maps in aberration corrected high resolution transmission electron microscopy images, we propose a simple method that allows quantifying the composition and disorder of a semiconductor alloy at the unit cell scale with high accuracy. This is realized by considering, next to the out-of-plane, also the in-plane lattice parameter component allowing to separate the chemical composition from the strain field. Considering only the out-of-plane lattice parameter component not only yields large deviations from the true local alloy content but also carries the risk of identifying false ordering phenomena like formations of chains or platelets. Our method is demonstrated on image simulations of relaxed supercells, as well as on experimental images of an In{sub 0.20}Ga{sub 0.80}N quantum well. Principally, our approach is applicable to all epitaxially strained compounds in the form of quantum wells, free standing islands, quantum dots, or wires.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Local stress-induced effects on AlGaAs/AlOx oxidation front shape

The lateral oxidation of thick AlGaAs layers (>500 nm) is studied. An uncommon shape of the oxide tip is evidenced and attributed to the embedded stress distribution, inherent to the oxidation reaction. Experimental and numerical studies of the internal strain in oxidized Al{sub x}Ga{sub 1−x}As/GaAs structures were carried out by dark-field electron holography and finite element methods. A mapping of the strain distribution around the AlGaAs/oxide interface demonstrates the main role of internal stress on the shaping of the oxide front. These results demonstrate the high relevance of strain in oxide-confined III-V devices, in particular, with over-500-nm thick AlOx confinement layers.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗