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At least 199 records · Page 11

Fifth-degree elastic energy for predictive continuum stress-strain relations and elastic instabilities under large strain and complex loading in silicon

Materials under complex loading develop large strains and often phase transformation via an elastic instability, as observed in both simple and complex systems. Here, we represent a material (exemplified for Si I) under large Lagrangian strains within a continuum description by a 5th-order elastic energy found by minimizing error relative to density functional theory (DFT) results. The Cauchy stress—Lagrangian strain curves for arbitrary complex loadings are in excellent correspondence with DFT results, including the elastic instability driving the Si I → II phase transformation (PT) and the shear instabilities. PT conditions for Si I → II under action of cubic axial stresses are linear in Cauchy stresses in agreement with DFT predictions. Such continuum elastic energy permits study of elastic instabilities and orientational dependence leading to different PTs, slip, twinning, or fracture, providing a fundamental basis for continuum physics simulations of crystal behavior under extreme loading.

Levitas, Valery↗

Topology optimization of finite strain viscoplastic systems under transient loads [Dynamic topology optimization based on finite strain visco-plasticity]

In this paper, a transient finite strain viscoplastic model is implemented in a gradient-based topology optimization framework to design impact mitigating structures. The model's kinematics relies on the multiplicative split of the deformation gradient, and the constitutive response is based on isotropic hardening viscoplasticity. To solve the mechanical balance laws, the implicit Newmark-beta method is used together with a total Lagrangian finite element formulation. The optimization problem is regularized using a partial differential equation filter and solved using the method of moving asymptotes. Sensitivities required to solve the optimization problem are derived using the adjoint method. To demonstrate the capability of the algorithm, several protective systems are designed, in which the absorbed viscoplastic energy is maximized. Finally, the numerical examples demonstrate that transient finite strain viscoplastic effects can successfully be combined with topology optimization.

42 ENGINEERING↗

Generalized grain boundary constitutive description implemented in a strain-gradient large-strain FFT-based formulation: Application to nano-metallic laminates

Herein this paper presents a general treatment of grain boundary constitutive behavior in the context of strain-gradient (SG) plasticity, and its numerical implementation in a large-strain (LS) elasto-viscoplastic (EVP) fast Fourier transform (FFT)-based micromechanical model. Two novel grain boundary constitutive equations are proposed, allowing for more accurate description of the Burgers vector flow at the grain boundary. The capabilities of the generalized SG-LS-EVPFFT formulation are illustrated for the case of kink-band formation during layer-parallel compression of nano-metallic laminates (NMLs), requiring consideration of the interaction between dislocations and interfaces.

36 MATERIALS SCIENCE↗

New large-strain FFT-based formulation and its application to model strain localization in nano-metallic laminates and other strongly anisotropic crystalline materials

This paper presents a new robust large-strain (LS) elasto-viscoplastic (EVP) formulation based on Fast Fourier Transforms (FFTs) for the prediction of the micro-mechanical response and microstructure evolution of polycrystalline and multiphase materials, with emphasis on the effect of strong crystallographic and/or morphologic anisotropy on localization of plastic deformation. In this work, the novel LS-EVPFFT formulation allows treatment of complex initial geometries and large deformations considering three grids of material points: a regular grid in the reference configuration, where FFTs can be performed; an irregular grid in the initial configuration, created by applying a stress-free displacement field to the reference regular grid; and an irregular grid in the current configuration, undergoing large strains and rotations as the material is loaded. Further numerical stability of the new formulation also required the use of a novel expression for the discrete modified Green’s operator, which reduces spurious field oscillations. After presenting and validating the new formulation by comparison with preexisting implementations and analytical solutions, LS-EVPFFT is applied to the prediction of slip and kink bands formation in polycrystalline columnar ice, and kink bands in single crystal zinc wires, showing good agreement with classic experiments. Finally, the model is used to study kink band formation during compression of Cu–Nb nano-metallic laminates (NMLs), in which accurate treatment of the complex geometry associated with the tortuosity of interfaces and large deformations become critical, showing consistency with corresponding micropillar experiments.

36 MATERIALS SCIENCE↗

Deformation and spallation of a magnesium alloy under high strain rate loading

We investigate deformation and damage of a magnesium alloy, AZ91, under high strain rate (similar to 10(5) s(-1)) loading via planar impact. The soft-recovered specimens are examined with electron back-scatter diffraction (EBSD). EBSD analysis reveals three types of twinning: {1012} extension, {10 (1) over bar1} contraction, and {10 (1) over bar1}-{10 (1) over bar2) double twinning, and their number density increases with increasing impact velocity. The extension twins dominate contraction and double twins in size and number. Dislocation densities of the recovered specimens are evaluated with x-ray diffraction, and increase with increasing impact velocity. X-ray tomography is used to resolve three-dimensional microstructure of shock-recovered samples. The EBSD and tomography results demonstrate that the second phase, Mg17Al12, plays an important role in both deformation twinning and tensile cracking. Deformation twinning appears to be a common mechanism in deformation of magnesium alloys at low, medium and high strain rates, in addition to dislocation motion. (C) 2016 Elsevier B.V. All rights reserved.

EBSD↗

High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping

High performance titanium nitride sub-100 nm rectifying contact, deposited by sputtering on AlGaN/GaN high electron mobility transistors, shows a reverse leakage current as low as 38 pA/mm at V{sub GS} = −40 V and a Schottky barrier height of 0.95 eV. Based on structural characterization and 3D simulations, it is found that the polarization gradient induced by the gate metallization forms a P-type pseudo-doping region under the gate between the tensile surface and the compressively strained bulk AlGaN barrier layer. The strain induced by the gate metallization can compensate for the piezoelectric component. As a result, the gate contact can operate at temperatures as high as 700 °C and can withstand a large reverse bias of up to −100 V, which is interesting for high-performance transistors dedicated to power applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting

Symmetric quantum dots (QDs) on (111)-oriented surfaces are promising candidates for generating polarization-entangled photons due to their low excitonic fine structure splitting (FSS). However, (111) QDs are difficult to grow. The conventional use of compressive strain to drive QD self-assembly fails to form 3D nanostructures on (111) surfaces. Instead, we demonstrate that (111) QDs self-assemble under tensile strain by growing GaAs QDs on an InP(111)A substrate. Tensile GaAs self-assembly produces a low density of QDs with a symmetric triangular morphology. Coherent, tensile QDs are observed without dislocations, and the QDs luminescence at room temperature. Single QD measurements reveal low FSS with a median value of 7.6 μeV, due to the high symmetry of the (111) QDs. Tensile self-assembly thus offers a simple route to symmetric (111) QDs for entangled photon emitters.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Strain-induced dimensionality crossover of precursor modulations in Ni 2 MnGa

Precursor modulations often occur in functional materials like magnetic shape memory alloys, ferroelectrics, and superconductors. In this letter, we have revealed the underlying mechanism of the precursor modulations in ferromagnetic shape memory alloys Ni 2 MnGa by combining synchrotron-based x-ray diffraction experiments and first-principles phonon calculations. We discovered the precursor modulations along [011] direction can be eliminated with [001] uniaxial loading, while the precursor modulations or premartensite can be totally suppressed by hydrostatic pressure condition. The TA 2 phonon anomaly is sensitive to stress induced lattice strain, and the entire TA 2 branch is stabilized along the directions where precursor modulations are eliminated by external stress. Furthermore, our discovery bridges precursor modulations and phonon anomalies, and sheds light on the microscopic mechanism of the two-step superelasticity in precursor martensite.

36 MATERIALS SCIENCE↗

Magneto-transport analysis of an ultra-low-density two-dimensional hole gas in an undoped strained Ge/SiGe heterostructure

We report the magneto-transport, scattering mechanisms, and effective mass analysis of an ultra-low density two-dimensional hole gas capacitively induced in an undoped strained Ge/Si{sub 0.2}Ge{sub 0.8} heterostructure. This fabrication technique allows hole densities as low as p ∼ 1.1 × 10{sup 10 }cm{sup −2} to be achieved, more than one order of magnitude lower than previously reported in doped Ge/SiGe heterostructures. The power-law exponent of the electron mobility versus density curve, μ ∝ n{sup α}, is found to be α ∼ 0.29 over most of the density range, implying that background impurity scattering is the dominant scattering mechanism at intermediate densities in such devices. A charge migration model is used to explain the mobility decrease at the highest achievable densities. The hole effective mass is deduced from the temperature dependence of Shubnikov-de Haas oscillations. At p ∼ 1.0 × 10{sup 11 }cm{sup −2}, the effective mass m* is ∼0.105 m{sub 0}, which is significantly larger than masses obtained from modulation-doped Ge/SiGe two-dimensional hole gases.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Observation of magnetic-field-induced transformation in MnCo 0.78 Fe 0.22 Ge alloys with colossal strain output and large magnetocaloric effect

The thermal, structural and magnetic properties were studied for the hexagonal MnCo0.78Fe0.22Ge alloys, which undergoes a first-order phase transformation from paramagnetic hexagonal phase into ferromagnetic orthorhombic martensite on cooling. Owing to the magnetostructural coupling, large magnetocaloric effect (Delta S-M= 10.97 J kg(-1) K-1) was obtained at 254 K. In-situ synchrotron high-energy X-ray diffraction experiments were conducted to reveal the detailed change in crystallographic structure of phases and the effect of applied magnetic field on phase transformation behaviors. An anomalously huge strain of 11.89% and volume expansion of 4.35% in unit-cell were obtained between martensite and parent phase across the transformation. Furthermore, the magnetic field-induced martensitic transformation was directly evidenced at 250 K, which eventually demonstrates the possibility to achieve magnetic-field-induced strain and large magnetocaloric effect simultaneously.

in-situ synchrotron high-energy X-ray diffraction↗

Temperature effect of elastic anisotropy and internal strain development in advanced nanostructured alloys: An in-situ synchrotron X-ray investigation

Nanostructured ferritic alloys (NFAs) are a promising structural material for advanced nuclear systems due to their exceptional radiation tolerance and high-temperature mechanical properties. Their remarkable properties result from the ultrafine ultrahigh density Y-Ti-O nanoclusters dispersed within the ferritic matrix. In this work, we performed in-situ synchrotron X-ray diffraction tests to study the tensile deformation process of the three types of NFAs: 9YWTV, 14YWT-sm13, and 14YWT-sm170 at both room temperature and elevated temperatures. A technique was developed, combining Kroner’s model and X-ray measurement, to determine the intrinsic monocrystal elastic-stiffness constants, and polycrystal Young’s modulus and Poisson’s ratio of the NFAs. Temperature dependence of elastic anisotropy was observed in the NFAs. An analysis of intergranular strain and strengthening factors determined that 14YWT-sm13 had a higher resistance to temperature softening compared to 9YWTV, attributed to the more effective nanoparticle strengthening during high-temperature mechanical loading.

Gan, Yingye↗

Strain induced vortex-to-uniform polarization transitions in soft-ferroelectric nanoparticles

Domain structures of ferroelectric polarization in patterned nanostructures depend sensitively on an interplay between their geometry and crystallographic anisotropy. In the recently predicted layered perovskite PbSr2Ti2O7 [S. M. Nakhmanson and I. Naumov, Phys. Rev. Lett. 104, 097601 (2010)], the in-plane anisotropy can be controlled by strain to be along in-plane [110]-directions or to vanish, in which case the polarization is free to rotate in the perovskite-layer. Using a microscopic Landau-Ginzburg-Devonshire free energy functional theory, we demonstrate that the domain structure in patterned disks of PbSr2Ti2O7 can be varied between uniform polarization and a vortex structure, analogous to vortices in soft magnetic disks. This opens up the possibility of designing nanostructured layered materials whose dielectric response can be manipulated with small elastic distortions.

Lee, Byounghak↗

Understanding misfit strain releasing mechanisms via molecular dynamics simulations of CdTe growth on {112}zinc-blende CdS

Molecular dynamics simulations have been used to analyse microstructures of CdTe films grown on {112} surfaces of zinc-blende CdS. Interestingly, CdTe films grow in <331> orientations as opposed to <112> epitaxial orientations. At the CdTe-{331}/CdS-{112} interface, however, there exists an axis that is parallel to the <110> orientation of both CdS and CdTe. It is the direction orthogonal to this <110> that becomes different, being <116> for CdTe and <111> for CdS, respectively. Missing CdTe-{110} planes are found along the <110> axis, suggesting that the misfit strain is released by the conventional misfit dislocation mechanism along this axis. In the orthogonal axis, the misfit strain is found to be more effectively released by the new grain orientation mechanism. Our finding is supported by literature experimental observations of the change of growth direction when Cd 0.96 Zn 0.04 Te films are deposited on GaAs. Lastly the analyses of energetics clearly demonstrate the cause for the formation of the new orientation, and the insights gained from our studies can help understand the grain structures experimentally observed in lattice mismatched systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗