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At least 199 records · Page 11

X-ray-diffraction and electrical-transport imaging of superconducting superhydride (La,Y)H 10

Understanding how microscopic structural domains govern macroscopic electronic properties is central to advancing hydride superconductors, yet such correlations remain poorly resolved under pressure. We report the synthesis and characterization of (La 0.9 Y 0.1 )H 10 superhydrides exhibiting coexisting cubic $Fm\bar{3}m$ and $P6_3/mmc$ hexagonal clathrate phases observed over the pressure range from 168 GPa down to 136 GPa. Using synchrotron-based X-ray diffraction imaging at the upgraded Advanced Photon Source, we spatially resolved μm-scale distributions of these phases, revealing structural inhomogeneity across the sample. Four-probe resistance measurements confirmed superconductivity with two distinct transitions: an onset at 244 K associated with the cubic phase and a second near 220 K linked to the hexagonal phase. Notably, resistance profiles collected from multiple current and voltage permutations showed variations in transition width and onset temperature that correlated with the spatial phase distribution. These findings demonstrate a direct connection between local structural domains and superconducting behavior.

Materials science↗

Charge ordering and structural transition in the new organic conductor {delta}'-(BEDT-TTF){sub 2}CF{sub 3}CF{sub 2}SO{sub 3}.

We report structural, transport, and optical properties and electronic structure calculations of the delta'-(BEDT-TTF) 2CF3CF2SO3 (BEDT-TTF = bis(ethylenedithio)-tetrathiafulvalene) organic conductor that has been synthesized by electrocrystallization. Electronic structure calculations demonstrate the quasi-one-dimensional Fermi surfaces of the compound, while the optical spectra are characteristic for a dimer-Mott insulator. The single-crystal X-ray diffraction measurements reveal the structural phase transition at 200 K from the ambient-temperature monoclinic P2(1)/m phase to the low-temperature orthorhombic Pca2(1) phase, while the resistivity measurements clearly show the first order semiconductor-semiconductor transition at the same temperature. This transition is accompanied by charge-ordering as it is confirmed by splitting of charge-sensitive vibrational modes observed in the Raman and infrared spectra. The horizontal stripe charge-order pattern is suggested based on the crystal structure, band structure calculations, and optical spectra.

Olejniczak, Iwona↗

Young’s modulus of V 3 O 5 thin films

Vanadium oxide V 3 O 5 exhibits an insulator-to-metal transition (IMT) near 430 K, which is the highest value for all vanadium oxides exhibiting IMTs. This makes it interesting for advanced electronic applications. However, the properties of V 3 O 5 have been little studied, and, in particular, there are no reports of experimentally determined mechanical properties. In this work, Young’s modulus of sputter-deposited V 3 O 5 thin films has been determined by measuring the fundamental resonant frequency of V 3 O 5 -coated silicon microcantilevers using a laser beam deflection technique. After deposition, the films were characterized by x-ray diffraction, resistivity measurements, and atomic force microscopy. The value of Young’s modulus experimentally determined for V 3 O 5 was 198 ± 14 GPa, which is slightly lower than the computationally derived values for bulk crystal V 3 O 5 .

36 MATERIALS SCIENCE↗

Final Technical Report for DE-FG02-86ER45268

This work addresses several key issues for understanding the unusual superconductivity in IBS, already shown to be technologically useful materials. 1a). Are reactive gasses like fluorine, chlorine, or water vapor behaving simply as electron donors to cause the superconductivity (at T conset =21 K) in undoped IBS like BaFe 2 As 2 ? 1b). Does exposure to fluorine increase T c in electron-doped IBS materials that are underdoped, e. g. Ba(Fe 0.96 Co 0.04 ) 2 As 2 ? 1c). Can fluorine as a reactive electron-donor, with its relatively greater ease of introduction into the lattice, be used as a rapid tool to search for superconductivity in new materials under investigation? Method of investigation: Using electron probe microanalysis, x-ray photoemission spectroscopy, and dynamical mean field theory calculations, we found that fluorine substitutes for As in the BaFe 2 As 2 lattice, and should therefore behave as an electron donor. We will F-dope Ba(Fe 0.96 Co 0.04 ) 2 As 2 and several new compounds under investigation for superconductivity upon doping to determine fluorine’s effect. Potential impact: If – like for fluorine - a brief exposure to hydrogen indeed causes superconductivity to a depth of 10 microns, this technique could be useful in creating long lengths of superconducting tape without the chemical aggressiveness of fluorine. Using the F ion, which substitutes for As - away from the Fe planes, in underdoped IBS like Ba(Fe 0.96 Co 0.04 ) 2 As 2 may form optimally doped IBS with less impurity scattering of the superconducting Fe 3d electrons resulting in improved superconducting properties. Another potential impact is the speed of checking for superconductivity in new materials under investigation for superconductivity upon doping. 2. What are the effects of Be substitution into IBS, beginning with FeSe and its derivatives (FeSe 1-x S x and FeSe 1-x Te x ) and BaFe 2-x Co x As 2 ? Method of investigation: We recently succeeded in adding Be to the FeSe lattice and found, surprisingly, a factor of four improvement of the low temperature residual resistivity ratio, consistent with improved electronic ordering. Using single crystal x-ray diffraction and x-ray dispersive spectroscopy, determine the concentration and location of the Be dopant. Using resistivity, determine if there is improvement in the residual resistivity achieved by Be doping in the FeSe derivatives (using AlCl 3 :KCl flux growth) and Co-doped BaFe 2 As 2 (using self-flux single crystal growth). Measuring resistivity under strain, determine the changes of the nematic susceptibility at the structural ordering transition causes by the increase in electronic order caused by Be doping in FeSe. Potential impact: Further understanding of IBS, including FeSe which - under physical pressure - has a T c increase to 40 K and -prepared as a monolayer - has a T c reported to be over 100 K. 3. In collaboration, prepare light atom compounds involving Be and look for high pressure-induced superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Ruth, R. P.↗

Transient magnetic field diffusion considerations relevant to magnetically assisted indirect drive inertial confinement fusion

We report application of a magnetic field to an indirect drive inertial confinement fusion target requires diffusion of the field through the high-Z and electrically conducting Hohlraum. The onset of the external field generates eddy currents in the Hohlraum wall that result in (1) a reduction of the peak field at the capsule, (2) heating of the Hohlraum wall through Ohmic dissipation, and (3) wall movement due to the inward force from the eddy current interacting with the field. Heating of the wall causes an increase in blackbody radiation which can preheat the capsule and frozen deuterium–tritium fuel, while wall motion leads to potential misalignment of the lasers at the Hohlraum wall. Limiting these detrimental effects sets requirements on the tolerable magnitude of each effect. We present a nonlinear model for B-field diffusion through an infinitely long thin-walled cylinder with a temperature dependent resistivity, to show that a 15 μm thick wall of pure gold fails to meet these requirements. A new Hohlraum material made from an alloy of Au and Ta has a measured resistivity of ≥60 times that of Au and is shown with the nonlinear model to meet the requirements for magnetization. We compare the nonlinear model to simulations of the actual Hohlraum target using a finite element code which includes temperature-dependent Hohlraum resistivity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Modeling the PV System Level Economic Impact of PV Connector Failure Modes

Photovoltaic (PV) connectors must maintain mechanical integrity for over 25 years while operating under UV exposure, elevated temperature, and mechanical loading. Connector degradation increases with electrical resistance, leading to energy losses, unplanned downtime, and higher operation and maintenance (O&M) costs and in severe cases, safety risks from overhearing or arcing. Connector related failures remain among the most frequent causes of disruption in utility-scale PV (UPV) systems, yet their lifetime economic impacts are poorly quantified. This work presents a techno-economic analysis (TEA) framework that links identified connector failure modes to system level energy losses and lifetime cost impacts using identified resistance measurements and failure rates from 6,2761 PV connectors inspected. Connector failures increase system level O&M costs, raising LCOE by roughly 5%. Downtime driven availability losses dominate economic impact. Resistance-driven I2R and IV-curve losses are secondary, but remain non-negligible. Thermal damage, bend-radius violations, and loose connections drive the majority of LCOE uplift Improving connector reliability through better installation quality, inspection, and design can meaningfully reduce lost energy, O&M costs, and LCOE.

14 SOLAR ENERGY↗

Characterization of Semi-Insulating CdTe Crystals Grown by Horizontal Seeded Physical Vapor Transport

CdTe crystals were grown by horizontal seeded physical vapor transport technique in uncoated and boron nitride coated fused silica ampoules with the source materials near the congruent sublimation condition. The grown crystals were characterized by current-voltage measurements, low temperature photoluminescence spectroscopy, near IR transmission optical microscopy, spark source mass spectroscopy and chemical etching. The measured resistivities of the crystals were in the high-10(exp 8) ohm-cm range. Although the crystal grown in the boron nitride coating was contaminated with boron from the photoluminescence measurements, the coating yielded a single crystal with no inclusions or precipitates.

Chattopadhyay, K.↗

Damage Mechanisms and Controlled Crack Propagation in a Hot Pressed Silicon Nitride Ceramic

The subcritical growth of cracks from pre-existing flaws in ceramics can severely affect the structural reliability of a material. The ability to directly observe subcritical crack growth and rigorously analyze its influence on fracture behavior is important for an accurate assessment of material performance. A Mode I fracture specimen and loading method has been developed which permits the observation of stable, subcritical crack extension in monolithic and toughened ceramics. The test specimen and procedure has demonstrated its ability to generate and stably propagate sharp, through-thickness cracks in brittle high modulus materials. Crack growth for an aluminum oxide ceramic was observed to be continuously stable throughout testing. Conversely, the fracture behavior of a silicon nitride ceramic exhibited crack growth as a series of subcritical extensions which are interrupted by dynamic propagation. Dynamic initiation and arrest fracture resistance measurements for the silicon nitride averaged 67 and 48 J/sq m, respectively. The dynamic initiation event was observed to be sudden and explosive. Increments of subcritical crack growth contributed to a 40 percent increase in fracture resistance before dynamic initiation. Subcritical crack growth visibly marked the fracture surface with an increase in surface roughness. Increments of subcritical crack growth loosen ceramic material near the fracture surface and the fracture debris is easily removed by a replication technique. Fracture debris is viewed as evidence that both crack bridging and subsurface microcracking may be some of the mechanisms contributing to the increase in fracture resistance. A Statistical Fracture Mechanics model specifically developed to address subcritical crack growth and fracture reliability is used together with a damaged zone of material at the crack tip to model experimental results. A Monte Carlo simulation of the actual experiments was used to establish a set of modeling input parameters. It was demonstrated that a single critical parameter does not characterize the conditions required for dynamic initiation. Experimental measurements for critical crack lengths, and the energy release rates exhibit significant scatter. The resulting output of the model produces good agreement with both the average values and scatter of experimental measurements.

Calomino, Anthony Martin↗

Development of a Supercharged Octane Number and a Supercharged Octane Index

Gasoline knock resistance is characterized by the Research and Motor Octane Number (RON and MON), which are rated on the CFR octane rating engine at naturally aspirated conditions. However, modern automotive downsized boosted spark ignition (SI) engines generally operate at higher cylinder pressures and lower temperatures relative to the RON and MON tests. Using the naturally aspirated RON and MON ratings, the octane index (OI) characterizes the knock resistance of gasolines under boosted operation by linearly extrapolating into boosted “beyond RON” conditions via RON, MON, and a linear regression K factor. Using OI solely based on naturally aspirated RON and MON tests to extrapolate into boosted conditions can lead to significant errors in predicting boosted knock resistance between gasolines due to non-linear changes in autoignition and knocking characteristics with increasing pressure conditions. Here, a new “Supercharged Octane Number” (SON) method was developed on the CFR engine at increased intake pressures, which improved the correlation to boosted knock-limited automotive SI engine data over RON for several surrogate fuels and gasolines, including five “Co-Optima” RON 98 fuels and an E10 regular grade gasoline. Furthermore, the conventional OI was extended to a newly introduced Supercharged Octane Index (OI S ) based on SON and RON, which significantly improved the correlation to fuel knock resistance measurements from modern boosted SI engine knock-limited spark advance tests. This demonstrated the first proof of concept of a SON and OI S to better characterize a fuel’s knock resistance in modern boosted SI engines.

42 ENGINEERING↗

Quantum criticality in Ce 1 - x Sm x Co In 5

Motivated by the possibility of observing the coexistence between magnetism and unconventional superconductivity in heavy-fermion Ce 1-x Sm x CoIn 5 alloys, we studied how the samarium substitution on the cerium site affects the magnetic field-tuned-quantum criticality of stoichiometric CeCoIn 5 by performing specific heat and resistivity measurements. By applying an external magnetic field, we have observed Fermi-liquid to non-Fermi-liquid crossovers in the temperature dependence of the electronic specific heat normalized by temperature and of the resistivity. We obtained the magnetic-field-induced quantum critical point (QCP) by extrapolating to zero temperature the temperature-magnetic field dependence at which the crossovers take place. Furthermore, a scaling analysis of the electronic specific heat is used to confirm the existence of the QCP. We have found that the magnitude of the magnetic-field-induced QCP decreases with increasing samarium concentration. Our analysis of heat capacity and resistivity data reveals a zero-field QCP for x cr ≈0.15, which falls inside the region where Sm ions antiferromagnetism and superconductivity coexist.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Formation of misfit dislocation arrays and helium nanochannels near copper surface assisted by high-temperature graphene deposition

Misfit dislocation arrays (MDAs) at semi-coherent heterogeneous interface have been demonstrated effectiveness to trap and then outgas helium (He) for alleviating void swelling in metals, but limited by atomic-level thin film deposition that is difficult to scale-up for industrial production. In this work, we proposed an innovative strategy that could generate semi-coherent homophase interfaces in a same grain by varying surface energy density assisted by high-temperature graphene (Gr) deposition. This strategy transforms strain energy and surface energy, two originally distinctive processes into successive processes, and demonstrates experimentally and theoretically by introducing {111} copper (Cu) in a {100} Cu grain. Subsequent He implantation and electrical resistivity measurement results suggest that high-density MDAs originated at this {111}/{100} interface could form stable He nanochannels near Cu surface with Gr assistance, manifesting by ultra-low increased ratio of the electrical resistivity (i.e. ~3800% of Cu vs. ~90% of Gr/Cu) after He implantation. Finally, the present findings may provide a new strategy for efficiently managing He and achieving surface protection of advanced metals, merely by depositing a super-rigid material on metal surface to greatly reduce surface energy density.

36 MATERIALS SCIENCE↗

Magnetic ordering at anomalously high temperatures in selected lanthanides: what about Pr?

Recent experiments have given evidence that for elemental Nd, Tb, and Dy the application of sufficient pressure pushes their magnetic ordering temperatures to anomalously high values. Pr metal has a dhcp structure and is trivalent with the 4f 2 configuration. Its singlet ground state suppresses magnetic order from the 15 K anticipated from de Gennes scaling to 50 mK. Four-point electrical resistivity measurements were carried out on Pr for temperatures 1.5–295 K under pressures to 48 GPa. Although no clear evidence for magnetic order (or superconductivity) is observed above 1.5 K, the temperature dependence of the resistivity gives evidence that Pr may enter a dense Kondo state above 10 GPa.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large magnetoresistance and first-order phase transition in antiferromagnetic single-crystalline EuAg 4 Sb 2

Here, we present the results of a thorough investigation of the physical properties of EuAg 4 Sb 2 single crystals using magnetization, heat capacity, and electrical resistivity measurements. High-quality single crystals, which crystallize in a trigonal structure with space group 𝑅⁢$\bar{3}$𝑚, were grown using a conventional flux method. Temperature-dependent magnetization measurements along different crystallographic orientations confirm two antiferromagnetic phase transitions around 𝑇 𝑁⁢1 = 10.5K and 𝑇 𝑁⁢2 = 7.5K. Isothermal magnetization data exhibit several metamagnetic transitions below these transition temperatures. Antiferromagnetic phase transitions in EuAg 4 Sb 2 are further confirmed by two sharp peaks in the temperature-dependent heat capacity data at 𝑇 𝑁⁢1 and 𝑇 𝑁⁢2 , which shift to lower temperature in the presence of an external magnetic field. Our systematic heat capacity measurements utilizing a long-pulse and single-slope analysis technique allow us to detect a first-order phase transition in EuAg 4 Sb 2 at 7.5 K. The temperature-dependent electrical resistivity data also manifest two features associated with magnetic order. The magnetoresistance exhibits a broad hump due to a field-induced metamagnetic transition. Remarkably, the magnetoresistance keeps increasing without showing any tendency to saturate as the applied magnetic field increases, and it reaches ∼20 000% at 1.6 K and 60 T. At high magnetic fields, several magnetic quantum oscillations are observed, indicating a complex Fermi surface. A large negative magnetoresistance of about −55% is also observed near 𝑇 𝑁⁢1 . Moreover, the 𝐻−𝑇 phase diagram constructed using magnetization, heat capacity, and magnetotransport data indicates complex magnetic behavior in EuAg 4 Sb 2 .

36 MATERIALS SCIENCE↗

Non-Contact Stiffness Measurement of a Suspended Single Walled Carbon Nanotube Device

A new nanoscale electric field sensor was developed for studying triboelectric charging in terrestrial and Martian dust devils. This sensor is capable to measure the large electric fields for large dust devils without saturation. However, to quantify the electric charges and the field strength it is critical to calibrate the mechanical stiffness of the sensor devices. We performed a technical feasibility study of the Nano E-field Sensor stiffness by a non-contact stiffness measurement method. The measurement is based on laser Doppler vibrometer measurement of the thermal noise due to energy flunctuations in the devices. The experiment method provides a novel approach to acquire data that is essential in analyzing the quantitative performance of the E-field Nano Sensor. To carry out the non-contact stiffness measurement, we fabricated a new Single-Walled Carbon Nanotube (SWCNT) E-field sensor with different SWCNTs suspension conditions. The power spectra of the thermal induced displacement in the nano E-field sensor were measured at the accuracy of picometer. The power spectra were then used to derive the mechanical stiffness of the sensors. Effect of suspension conditions on stiffness and sensor sensitivty was discussed. After combined deformation and resistivity measurement, we can compare with our laboratory testing and field testing results. This new non-contact measurement technology can also help to explore to other nano and MEMS devices in the future.

Zheng, Yun↗

Status of NTD Ge bolometer material and devices

The first IR Detector Technology Workshop took place at NASA Ames Research Center on July 12 and 13, 1983. The conclusions presented at that meeting are still valid. More was learned about the physics of hopping conduction at very low temperatures which will be important for bolometer design and operation at ever decreasing temperatures. Resistivity measurements were extended down to 50 mK. At such low temperatures, precise knowledge of the neutron capture cross sections sigma (sub n) of the various Ge isotopes is critical if one is to make an accurate prediction of the dopant concentrations and compensation, and therefore resistivity, that will result from a given irradiation. An empirical approach for obtaining the desired resistivity material is described and the process of conducting a set of experiments which will improve the knowledge of the effective sigma (sub n) values for a given location in a particular reactor is discussed. A wider range of NTD Ge samples is now available. Noise measurements on bolometers with ion implanted contacts show the no 1/f noise component appears down to 1 Hz and probably lower.

Haller, E. E.↗