Results for “random access” — Page 11

DOE OSTI2024

CORRLA-RS

The CORRLA-RS package provides a suite of statistical methods for sampling multidimensional distributions and to conduct sensitivity and correlation analysis of large scale data in the Rust programming language. The software provides a unique solution to multidimensional constrained sampling problems utilizing a combination of parallelized Markov Chain Monte Carlo methods and traditional rejection sampling. The sensitivity and correlation analysis methods are backed by a high performance randomized singular value decomposition implementation which enables datasets larger than the random access memory (RAM) size to be analyzed. Additionally, CORRLA-RS implements the active subspace identification method using a KD-Tree and the randomized singular value decomposition acting in concert.

Gurecky, William [Oak Ridge National Laboratory (O↗

NASA NTRS1990

CSMA/RN: A universal protocol for gigabit networks

Networks must provide intelligent access for nodes to share the communications resources. In the range of 100 Mbps to 1 Gbps, the demand access class of protocols were studied extensively. Many use some form of slot or reservation system and many the concept of attempt and defer to determine the presence or absence of incoming information. The random access class of protocols like shared channel systems (Ethernet), also use the concept of attempt and defer in the form of carrier sensing to alleviate the damaging effects of collisions. In CSMA/CD, the sensing of interference is on a global basis. All systems discussed above have one aspect in common, they examine activity on the network either locally or globally and react in an attempt and whatever mechanism. Of the attempt + mechanisms discussed, one is obviously missing; that is attempt and truncate. Attempt and truncate was studied in a ring configuration called the Carrier Sensed Multiple Access Ring Network (CSMA/RN). The system features of CSMA/RN are described including a discussion of the node operations for inserting and removing messages and for handling integrated traffic. The performance and operational features based on analytical and simulation studies which indicate that CSMA/RN is a useful and adaptable protocol over a wide range of network conditions are discussed. Finally, the research and development activities necessary to demonstrate and realize the potential of CSMA/RN as a universal, gigabit network protocol is outlined.

Foudriat, E. C.↗

NASA NTRSDate not supplied

Parallelized Convolutional Interleaver Implementation for Efficient DDR Memory Access

Convolutional interleavers are used in many different communications systems to correct for burst errors due to atmospheric fades and scintillation. The interleaver size is related to the channel coherence time and the data rate. Small convolutional interleavers can be implemented in a field programmable gate array (FPGA) block random access memory (BRAM). However, large interleavers exceeding the size of the BRAM on the FPGA are necessary for channels with longer fades and higher data rates. Therefore, an implementation utilizing double data rate (DDR) memory external to the FPGA is necessary. Wide DDR memory data buses can make the use of DDR memory for convolutional interleavers inefficient when individual symbols are written to and read from the memory. DDR memory operational speeds can also limit the data rate of the interleaver. The Consultative Committee for Space Data Systems (CCSDS) Optical Communications High Photon Efficiency (HPE) standard utilizes a convolutional channel symbol interleaver. A previous implementation of the HPE standard utilized BRAM for the convolutional interleaver, but mission requirements for the upcoming Optical Artemis-2 Orion (O2O) communications demonstration dictate the use of an interleaver exceeding the size of the BRAM. An algorithm and method for implementing the convolutional interleaver in the FPGA with DDR memory is described in this paper.

optical communications↗

NASA NTRSDate not supplied

Parallelized convolutional interleaver implementation for efficient DDR memory access

Convolutional interleavers are used in many different communications systems to correct for burst errors due to atmospheric fades and scintillation. The interleaver size is related to the channel coherence time and the data rate. Small convolutional interleavers can be implemented in a field programmable gate array (FPGA) block random access memory (BRAM). However, large interleavers exceeding the size of the BRAM on the FPGA are necessary for channels with longer fades and higher data rates. Therefore, an implementation utilizing double data rate (DDR) memory external to the FPGA is necessary. Wide DDR memory data buses can make the use of DDR memory for convolutional interleavers inefficient when individual symbols are written to and read from the memory. DDR memory operational speeds can also limit the data rate of the interleaver. The Consultative Committee for Space Data Systems (CCSDS) Optical Communications High Photon Efficiency (HPE) standard utilizes a convolutional channel symbol interleaver. A previous implementation of the HPE standard utilized BRAM for the convolutional interleaver, but mission requirements for the upcoming Optical Artemis-2 Orion (O2O) communications demonstration dictate the use of an interleaver exceeding the size of the BRAM. An algorithm and method for implementing the convolutional interleaver in the FPGA with DDR memory is described in this paper.

Optical communications↗

NASA NTRS1984

SARSAT 406 MHz system technical evaluation

The location accuracy, access to spacecraft, uplink margin, and interference problems of the COSPAS-SARSAT system are reviewed. Over 90% of positions are accurate to within 5 km, in local mode, slightly worse in global mode. The random access parameters of SARSAT provide for the location of up to 90 beacons with a uniform distribution in the satellite visibility circle (2600 km radius). The ratio of messages correctly processed on board to messages transmitted to the satellite is 0.8, increasing as number of beacons decreases. Interference, particularly over western Europe and the United States degrades performance, but sources can be located.

Goudy, P.↗

DOE OSTI2014

OTRA-THS MAC to reduce Power Outage Data Collection Latency in a smart meter network

The deployment of advanced metering infrastructure by the electric utilities poses unique communication challenges, particularly as the number of meters per aggregator increases. During a power outage, a smart meter tries to report it instantaneously to the electric utility. In a densely populated residential/industrial locality, it is possible that a large number of smart meters simultaneously try to get access to the communication network to report the power outage. If the number of smart meters is very high of the order of tens of thousands (metropolitan areas), the power outage data flooding can lead to Random Access CHannel (RACH) congestion. Several utilities are considering the use of cellular network for smart meter communications. In 3G/4G cellular networks, RACH congestion not only leads to collisions, retransmissions and increased RACH delays, but also has the potential to disrupt the dedicated traffic flow by increasing the interference levels (3G CDMA). In order to overcome this problem, in this paper we propose a Time Hierarchical Scheme (THS) that reduces the intensity of power outage data flooding and power outage reporting delay by 6/7th, and 17/18th when compared to their respective values without THS. Also, we propose an Optimum Transmission Rate Adaptive (OTRA) MAC to optimize the latency in power outage data collection. The analysis and simulation results presented in this paper show that both the OTRA and THS features of the proposed MAC results in a Power Outage Data Collection Latency (PODCL) that is 1/10th of the 4G LTE PODCL.

Garlapati, Shravan K↗

NASA NTRS1981

NEMAR plotting computer program

A FORTRAN coded computer program which generates CalComp plots of trajectory parameters is examined. The trajectory parameters are calculated and placed on a data file by the Near Earth Mission Analysis Routine computer program. The plot program accesses the data file and generates the plots as defined by inputs to the plot program. Program theory, user instructions, output definitions, subroutine descriptions and detailed FORTRAN coding information are included. Although this plot program utilizes a random access data file, a data file of the same type and formatted in 102 numbers per record could be generated by any computer program and used by this plot program.

Myler, T. R.↗

DOE OSTI2016

Effect of annealing on exchange stiffness of ultrathin CoFeB film with perpendicular magnetic anisotropy

The effect of annealing on the exchange stiffness of ultrathin CoFeB films with perpendicular magnetic anisotropy was investigated through the observation of magnetic domain structures by magneto-optic Kerr-effect microscopy. A significant reduction of the exchange stiffness after an annealing process was observed, which is in striking contrast to a previous report that studied thick CoFeB films with in-plane magnetic anisotropy. Our results suggest that interdiffusion of non-magnetic atoms from the adjacent layer into CoFeB layer reduces the exchange stiffness, which explains the difference between the annealing effect on ultrathin and the thick CoFeB films. Thus, it is critical to prevent annealing-induced interdiffusion in order to suppress undesired sub-volume switching that degrades thermal stability of a free-layer in spin-transfer torque magnetic random access memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2013

Bipolar resistive switching characteristics of low temperature grown ZnO thin films by plasma-enhanced atomic layer deposition

ZnO films deposited by plasma-enhanced atomic layer deposition (PEALD) have been used to investigate resistive memory behavior. The bipolar resistance switching properties were observed in the Al/PEALD-ZnO/Pt devices. The resistance ratio for the high and low resistance states (HRS/LRS) is more than 10{sup 3}, better than ZnO devices deposited by other methods. The dominant conduction mechanisms of HRS and LRS are trap-controlled space charge limited current and Ohmic behavior, respectively. The resistive switching behavior is induced upon the formation/disruption of conducting filaments. This study demonstrated that the PEALD-ZnO films have better properties for the application in 3D resistance random access memory.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Effect of rare earth metal on the spin-orbit torque in magnetic heterostructures

We report the effect of the rare earth metal Gd on current-induced spin-orbit torques (SOTs) in perpendicularly magnetized Pt/Co/Gd heterostructures, characterized using harmonic measurements and spin-torque ferromagnetic resonance (ST-FMR). By varying the Gd metal layer thickness from 0 nm to 8 nm, harmonic measurements reveal a significant enhancement of the effective fields generated from the Slonczewski-like and field-like torques. ST-FMR measurements confirm an enhanced effective spin Hall angle and show a corresponding increase in the magnetic damping constant with increasing Gd thickness. These results suggest that Gd plays an active role in generating SOTs in these heterostructures. Our finding may lead to spin-orbitronics device application such as non-volatile magnetic random access memory, based on rare earth metals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2013

Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2013

Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2014

Fencing direct memory access data transfers in a parallel active messaging interface of a parallel computer

Fencing direct memory access (`DMA`) data transfers in a parallel active messaging interface (`PAMI`) of a parallel computer, the PAMI including data communications endpoints, each endpoint including specifications of a client, a context, and a task, the endpoints coupled for data communications through the PAMI and through DMA controllers operatively coupled to segments of shared random access memory through which the DMA controllers deliver data communications deterministically, including initiating execution through the PAMI of an ordered sequence of active DMA instructions for DMA data transfers between two endpoints, effecting deterministic DMA data transfers through a DMA controller and a segment of shared memory; and executing through the PAMI, with no FENCE accounting for DMA data transfers, an active FENCE instruction, the FENCE instruction completing execution only after completion of all DMA instructions initiated prior to execution of the FENCE instruction for DMA data transfers between the two endpoints.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2016

Spin-orbit torque induced magnetization switching in Ta/Co{sub 20}Fe{sub 60}B{sub 20}/MgO structures under small in-plane magnetic fields

Spin-orbit torque (SOT)-induced magnetization switching under small in-plane magnetic fields in as-deposited and annealed Ta/CoFeB/MgO structures is studied. For the as-deposited samples, partial SOT-induced switching behavior is observed under an in-plane field of less than 100 Oe. Conversely, for the annealed samples, an in-plane field of 10 Oe is large enough to achieve full deterministic magnetization switching. The Dzyaloshinskii-Moriya interaction at the Ta/CoFeB interface is believed to be the main reason for the discrepancy of the requisite in-plane magnetic fields for switching in the as-deposited and annealed samples. In addition, asymmetric field dependence behavior of SOT-induced magnetization switching is observed in the annealed samples. Deterministic magnetization switching in the absence of an external magnetic field is obtained in the annealed samples, which is extremely important to develop SOT-based magnetoresistive random access memory.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Joint perpendicular anisotropy and strong interlayer exchange coupling in systems with thin vanadium spacers

We study the influence of the insertion of a vanadium spacer layer between an FeCoB layer and a [Co/Ni] multilayer in an MgO substrate-based system mimicking the reference system of a perpendicular anisotropy magnetic tunnel junction. The anisotropy of the [Co/Ni] multilayer gradually improves with the vanadium thicknesses t, up to an optimized state for t = 8 Å, with little influence of the thermal annealing. The interlayer exchange coupling is ferromagnetic and very strong for t≤6 Å. It can be adjusted by thermal treatment at t = 8 Å from no coupling in the as-grown state to more than 2 mJ/m{sup 2} after 250 °C annealing. For this spacer thickness, the magnetic properties are consistent with the occurrence of a bcc (001) to an fcc (111) crystalline structure transition at the vanadium spacer. The remaining interlayer exchange coupling at t = 8 Å is still substantially higher than the one formerly obtained with a Tantalum spacer, which holds promise for further optimization of the reference layers of tunnel junctions meant for magnetic random access memories.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Temperature effect on vortex-core reversals in magnetic nanodots

We studied the temperature effect on vortex-core reversals in soft magnetic nanodots by micromagnetic numerical calculations within a framework of the stochastic Landau-Lifshitz-Gilbert scheme. It was determined that vortex-core-switching events at non-zero temperatures occur stochastically, and that the threshold field strength increases with temperature for a given field frequency. The mechanism of core reversals at elevated temperatures is the same as that of vortex-antivortex-pair-mediated core reversals found at the zero temperature. The reversal criterion is also the out-of-plane component of a magnetization dip that should reach −p, which is to say, m{sub z,dip} = −p, where p is the original polarization, p = +1 (−1), for the upward (downward) core. By this criterion, the creation of a vortex-antivortex pair accompanies complete vortex-antivortex-annihilation-mediated core reversals, resulting in the maximum excess of the exchange energy density, ΔE{sub ex}{sup cri} ≈ 15.4 ± 0.2 mJ/cm{sup 3}. This work provides the underlying physics of vortex-core reversals at non-zero temperatures, and potentiates the real application of vortex random access memory operating at elevated temperatures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2015

Beta (β) tungsten thin films: Structure, electron transport, and giant spin Hall effect

We use a simple magnetron sputtering process to fabricate beta (β) tungsten thin films, which are capable of generating giant spin Hall effect. As-deposited thin films are always in the metastable β-W phase from 3.0 to 26.7 nm. The β-W phase remains intact below a critical thickness of 22.1 nm even after magnetic thermal annealing at 280 °C, which is required to induce perpendicular magnetic anisotropy (PMA) in a layered structure of β-W/Co{sub 40}Fe{sub 40}B{sub 20}/MgO. Intensive annealing transforms the thicker films (>22.1 nm) into the stable α-W phase. We analyze the structure and grain size of both β- and α-W thin films. Electron transport in terms of resistivity and normal Hall effect is studied over a broad temperature range of 10 K to at least 300 K on all samples. Very low switching current densities are achieved in β-W/Co{sub 40}Fe{sub 40}B{sub 20}/MgO with PMA. These basic properties reveal useful behaviors in β-W thin films, making them technologically promising for spintronic magnetic random access memories and spin-logic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Reducing spin-torque switching current by incorporating an ultra-thin Ta layer with CoFeB free layer in magnetic tunnel junctions

We studied the spin torque switching in dual MgO layer based magnetic tunnel junctions (MTJs) by incorporating an ultra-thin (0.5 nm) Ta layer at the CoFeB free layer/top MgO layer interface. The Ta incorporated MTJ showed a significant reduction (∼30%) in critical switching current density (J{sub C0} ) as compared to that of the control MTJ whilst maintaining the same tunneling magnetoresistance as well as thermal stability. The reduction of J{sub C0} can be attributed to the perpendicular magnetic anisotropy arising from the incorporation of an ultrathin Ta layer with the MgO|CoFeB structure. This scheme of reducing J{sub C0} without degrading other properties may contribute to the development of spin-transfer-torque magnetic random access memory for low power applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗