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Technique prevents silicon wafers from adhering to susceptor following silicon epitaxial deposition. Annular ring of refractory material goes around wafer during epitaxial deposit. Silicon is deposited on ring, susceptor, and portions of wafer. Ring breaks away from susceptor and wafer and no silicon undergrowth occurs.
Chromium prepared by the iodide process was consolidated into 100-g buttons by arc melting and fabricated to sheet by rolling. Test specimens machined from the wrought sheet were annealed in palladium-purified hydrogen, followed by a purification anneal, in order to produce stable grain structures for testing. Observations of surface slip lines and dislocation substructures suggest that a diffusion-controlled, dislocation-climb mechanism is operative in the creep of chromium over the temperature range investigated.
Research on the fracture behavior of silicon nitride and silicon carbide is reported along with the role of anion impurities in the fabrication and behavior of magnesium oxide. The results of a survey of crack propagation in SiC and Si3N4 are presented. Studies in the following areas are reported: development of a fracture toughness testing technique, constant moment beam, microcrack examination, and etching techniques.
A summary is presented of optical measurements performed on a variety of cesium iodide samples to characterize quantitatively the optical quality of the materials, and to define and measure parameters which determine its suitability as a detector material for high energy cosmic ray experiments on HEAO-A. The general case of light transmission through a long rectangular slab under multiple internal reflections is discussed along with transmission and scattering as a function of wavelength at normal incidence. Scattering parameters are tabulated for encapsulated single crystal CsI and polyscin.
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The results are described of the final stage of the research involving the role of anions in the behavior of magnesium oxide, as well as the continued efforts of the fracture behavior of silicon nitride materials. These efforts, particularly the first, are further sub-divided in subsections describing individual types of behavior of materials.
Results from tests of the first variable-gap diminiode at an initial interelectrode spacing of 0.23 millimeter indicate sharply defined, relatively low ultimate power points. This characteristic supports the value of the diminiode as a well-controlled tool for thermionic-conversion research and development.
Explosive deformation (50 kbar range) induced, in Cu, Mo and Nb, internal friction peaks identical to those observed after large normal deformation. The variation of the peaks with pressure for Mo and Nb lead to an explanation of these processes in terms of double kink generation in screw and edge dislocations.
Various properties of ceramic materials were investigated. Magnesium oxide and the role of anion impurities were investigated together with the slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth. The carbide-nitride work employed commercial materials and the research involved evaluation of a recently reported technique for study of slow crack growth and the development of data for these commercial materials.
The first study area involved magnesium oxide and the role of anion impurities, while the second area was directed toward slow crack growth in silicon nitride-silicon carbide ceramics. The oxide program involved development of fabrication techniques for anion doped materials and evaluation of the role of these anions in the hot pressing response, grain boundary diffusion of nickel doped material, grain boundary microhardness, and grain growth.
The AMO efficiencies (no anti-reflection coating) obtained to date are 2.5% for solar cells deposited on graphite substrates, 3.5% for solar cells deposited on metallurgical silicon substrates, and 4.5% for solar cells fabricated from purified metallurgical silicon.
A .005 M solution of fluorescein in cyclohexanol was directionally solidified in a standard 10 x 10 x 45mm UV silica cuvette, using a bottom thermoelectric chilling device. Progress of the experiment was monitored by time lapse photography. During flight (SPAR I) the camera malfunctioned and only one quarter of the expected data were collected. Comparison of flight and ground specimens indicated that: (1) The dark green layer observed ahead of the solid-liquid interface which is most likely the solute-enriched zone, appears to be wider in the flight specimen; (2) Parasitic nucleation ahead of the solid-liquid interface in the flight sample led to an irregularly shaped interface, smaller grain size, equiaxed grain morphology and a larger average macroscopic growth rate; (3) The formation of equiaxed grains ahead of the solid-liquid interface in the flight specimen may be attributed to ordered islands within the liquid, which survived remelting because of the low degree of superheating (approximately equal to 1.5 C), did not settle because of reduced gravity and acted as nuclei during cooling.
Economical batch process includes resolidification step to improve conversion efficiency. Experimental models made by process vary in conversion efficiency from 1.4 to more than 6 percent.
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The infrared spectra of alkali metal and ammonium hydrosulfides have been recorded from wavenumbers of 200 to 4000 at liquid nitrogen temperatures, and the Raman spectra of these substances have been recorded from wavenumbers of 0 to 4000 over the temperature range 83-390 K. No evidence of a second solid phase was obtained. Internal and external fundamentals were assigned, in detail, based on selection rules, isotopic frequency shifts, and analogy with structurally similar salts. Barriers to anion and cation reorientation of 3.8 and 1.9 kcal/mole, respectively, have been calculated from librational assignments. The implications of the infrared spectrum of ammonium hydrosulfide for the possible spectroscopic detection of this substance in the atmosphere of the planet Jupiter are discussed.
Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.
Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.
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