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Self-diffusion of Ti interstitial based point defects and complexes in TiC
To date, the mechanism of Ti atom self-diffusion is unproven. Prior theoretical work mostly focused on Ti vacancy based mediators, but these do not reproduce the experimental activation energy or entropy. In this work, in density functional theory calculations, Ti interstitials and related defect complexes are systematically considered as possible mediators of Ti self-diffusion. Among these defects, the defect complex of two C vacancies tightly bound to a Ti dumbbell is found to have the lowest formation energy. A sustainable migration of the complex, in a translational or rotational fashion, is enabled in the presence of another (free) carbon vacancy nearby the complex, and thus the rate of Ti self-diffusion by this mechanism is dependent on the concentration of carbon vacancies. The calculated activation energy of the complex agrees well with the experimental value in TiC 0.97 . Similar analyses of the Ti self-diffusion mechanisms mediated by Ti interstitials or dumbbells yield much higher activation energies, but the corresponding migration energies are evaluated to be less than 1 eV, which suggests they can be possible mediators of the radiation-enhanced Ti self-diffusion in TiC. To fully enable the comparison with experiments that are typically conducted at temperatures as high as 2500 K, we also consider the temperature dependent vibrational contribution to the activation energy of the defect complex. The vibrational contribution imposes an additive effect on the defect formation energy, while the migration energies are lowered due to the thermal expansion of the lattice. When combined, these factors give an excellent agreement with the experiments. Furthermore, this work gives strong support to the concept that Ti interstitial based defect complexes are likely diffusion mediators for Ti atom self-diffusion in TiC, further establishes a solid basis for large-scale modeling, and may eventually pave the way to accurately predicting defect-controlled diffusional processes.
Impact of radiation-induced point defects on thermal carrier decay processes in GaAs
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Displacement Threshold Energy and Recovery in an Al-Ti Nanolayered System with Intrinsic Point Defect Partitioning
A method is established and validated using molecular dynamics (MD) to determine the displacement threshold energies as Ed in nanolayered, multilayered systems of dissimilar metals. The method is applied to specifically oriented nanolayered films of Al-Ti where the crystal structure and interface orientations are varied in atomic models and Ed is calculated. Methods for defect detection are developed and discussed based on prior research in the literature and based on specific crystallographic directions available in the nanolayered systems. These are compared and contrasted to similar calculations in corresponding bulk materials, including fcc Al, fcc Ti, hcp Al, and hcp Ti. In all cases, the calculated Ed in the multilayers are intermediate to the corresponding bulk values but exhibit some important directionality. In the nanolayer, defect detection demonstrated systematic differences in the behavior of Ed in each layer. Importantly, collision cascade damage exhibits significant defect partitioning within the Al and Ti layers that is hypothesized to be an intrinsic property of dissimilar nanolayered systems. This type of partitioning could be partly responsible for observed asymmetric radiation damage responses in many multilayered systems. In addition, a pseudo-random direction was introduced to approximate the average Ed without performing numerous simulations with random directions.
Bounds on the range of density-functional-theory point-defect levels in semiconductors and insulators
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Point defects production and energy thresholds for displacements in crystalline and amorphous SiC
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Point defect model for the corrosion of steels in supercritical water: Part I, film growth kinetics
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Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium
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Coupled chemo-mechanical modeling of point-defect diffusion in a crystal plasticity fast Fourier transform framework
Below the yield strength and at moderate-to-high homologous temperatures, the inelastic deformation of metals is mostly governed/rate-controlled by vacancy diffusion-mediated processes. As a function of grain size, stress, temperature and dislocation content, vacancies (or atoms) can adopt preferential diffusion paths across grain interiors, along grain boundaries, or towards and along dislocations, resulting in climb and self-climb. In the steady state and under constant load, grain boundary and grain bulk vacancy diffusion-mediated plasticity have been described in seminal works by Coble and by Nabarro and Herring, respectively. Yet, the interplay between all aforementioned potential diffusion pathways has not been comprehensively mapped. This work presents a thermodynamically-consistent full-field model integrated within a voxel-based elasto-viscoplastic fast Fourier transform framework, which considers the coupling between the diffusion-mediated plasticity mechanisms. In the proposed approach, the kinetics and kinematics of plastic deformation due to vacancy diffusion along grain boundaries and grain bulk, as well as the exchange between grain boundaries and bulk are described explicitly. A homogenization approach at the voxel level is further introduced to simultaneously consider bulk and grain boundary diffusion in a numerically efficient fashion. The new formulation predicts the expected strain rate dependencies and the scaling of the steady-state creep rate with respect to grain size, temperature, and stress. Finally, the model predicts the transition from grain bulk to grain boundary-dominated diffusion with reduction in grain size, a significant step towards capturing transitions in deformation behavior without any phenomenological or ad-hoc adjustments.
Molecular statics calculations of the biases and point defect capture volumes of small cavities
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Ab initio study of the stability of intrinsic and extrinsic Ag point defects in 3C SiC
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Ab initio molecular dynamics investigation of point defects in γ -U
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Equilibrium distribution of point defects in Fe-Y-O as a typical representative of nanocluster-strengthened alloys
The statistical mechanic approach has been used to estimate the equilibrium defect distribution in a multiphase system by minimizing its free energy using microstructural characteristics and a finite set of defects obtained by first-principles calculations. Recently the approach was extended to take in consideration defects at the interface of the precipitate and matrix. Herein we apply the developed approach to the investigation of the stability of bcc Fe containing yttria, Y 2 O 3 , nanoclusters as a prototype of nanostructured ferritic alloys. It has been obtained that (100)Fe-O interface is unstable with respect to vacancies production. In a contrast to (100)Fe-O interface, the so called Klim interface is stable, i.e. local vacancy concentration at this interface at 600 K is below 10 -12 . It has been demonstrated that due to large defect formation energies the ODS particles are extremely stable and the main defect corresponds to Fe atoms substitute Y in Y 2 O 3 precipitate. Moreover, under thermodynamic equilibrium condition, the preexist vacancies in bulk Fe do not accumulate oxygen atom. The later observation not necessarily forbid the existence of a large amount of preexisting Fe vacancy - oxygen atom clusters at the initial stages of alloy formation far from equilibrium.
First-principles study of diffusion of intrinsic point defects in tungsten borides
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