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Sr2Cl2F is alpha Niobium phosphide-derived structured and crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one Sr2Cl2F cluster. Sr is bonded in a linear geometry to one Cl and one F atom. The Sr–Cl bond length is 2.56 Å. The Sr–F bond length is 2.31 Å. Cl is bonded in a single-bond geometry to one Sr atom. F is bonded in a linear geometry to two equivalent Sr atoms.
(Cd)2CdSe is alpha Niobium phosphide-like structured and crystallizes in the tetragonal I4/mmm space group. The structure is two-dimensional and consists of two Cd sheets oriented in the (0, 0, 1) direction and two CdSe sheets oriented in the (0, 0, 1) direction. In each Cd sheet, Cd is bonded in a square co-planar geometry to four equivalent Cd atoms. All Cd–Cd bond lengths are 2.89 Å. In each CdSe sheet, Cd is bonded in a square co-planar geometry to four equivalent Se atoms. All Cd–Se bond lengths are 2.89 Å. Se is bonded in a square co-planar geometry to four equivalent Cd atoms.
Bi20(PtI12)3 is alpha Niobium phosphide-derived structured and crystallizes in the triclinic P-1 space group. The structure is zero-dimensional and consists of one Bi20(PtI12)3 cluster. there are two inequivalent Pt2- sites. In the first Pt2- site, Pt2- is bonded in an octahedral geometry to six Bi+2.10+ atoms. There are four shorter (2.76 Å) and two longer (2.77 Å) Pt–Bi bond lengths. In the second Pt2- site, Pt2- is bonded in an octahedral geometry to six Bi+2.10+ atoms. There are a spread of Pt–Bi bond distances ranging from 2.76–2.78 Å. There are ten inequivalent Bi+2.10+ sites. In the first Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form BiPtI4 square pyramids that share a cornercorner with one BiPtI4 square pyramid, an edgeedge with one BiI6 octahedra, and edges with four BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.10–3.28 Å. In the second Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form BiPtI4 square pyramids that share a cornercorner with one BiPtI4 square pyramid, an edgeedge with one BiI6 octahedra, and edges with four BiPtI4 square pyramids. There are two shorter (3.11 Å) and two longer (3.28 Å) Bi–I bond lengths. In the third Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form BiPtI4 square pyramids that share a cornercorner with one BiPtI4 square pyramid, an edgeedge with one BiI6 octahedra, and edges with four BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.03–3.42 Å. In the fourth Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form BiPtI4 square pyramids that share a cornercorner with one BiPtI4 square pyramid, an edgeedge with one BiI6 octahedra, and edges with four BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.04–3.40 Å. In the fifth Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form a mixture of corner and edge-sharing BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.08–3.27 Å. In the sixth Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form a mixture of corner and edge-sharing BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.10–3.23 Å. In the seventh Bi+2.10+ site, Bi+2.10+ is bonded to six I1- atoms to form edge-sharing BiI6 octahedra. There are a spread of Bi–I bond distances ranging from 3.05–3.21 Å. In the eighth Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form BiPtI4 square pyramids that share a cornercorner with one BiPtI4 square pyramid, an edgeedge with one BiI6 octahedra, and edges with four BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.10–3.28 Å. In the ninth Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form BiPtI4 square pyramids that share a cornercorner with one BiPtI4 square pyramid, an edgeedge with one BiI6 octahedra, and edges with four BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.03–3.41 Å. In the tenth Bi+2.10+ site, Bi+2.10+ is bonded to one Pt2- and four I1- atoms to form a mixture of corner and edge-sharing BiPtI4 square pyramids. There are a spread of Bi–I bond distances ranging from 3.08–3.26 Å. There are eighteen inequivalent I1- sites. In the first I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms. In the second I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms. In the third I1- site, I1- is bonded in a distorted T-shaped geometry to three Bi+2.10+ atoms. In the fourth I1- site, I1- is bonded in a 3-coordinate geometry to three Bi+2.10+ atoms. In the fifth I1- site, I1- is bonded in a 3-coordinate geometry to three Bi+2.10+ atoms. In the sixth I1- site, I1- is bonded in a 3-coordinate geometry to three Bi+2.10+ atoms. In the seventh I1- site, I1- is bonded in a 2-coordinate geometry to two Bi+2.10+ atoms. In the eighth I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms. In the ninth I1- site, I1- is bonded in a 2-coordinate geometry to two Bi+2.10+ atoms. In the tenth I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms. In the eleventh I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms. In the twelfth I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms. In the thirteenth I1- site, I1- is bonded in a distorted T-shaped geometry to three Bi+2.10+ atoms. In the fourteenth I1- site, I1- is bonded in a 3-coordinate geometry to three Bi+2.10+ atoms. In the fifteenth I1- site, I1- is bonded in a 2-coordinate geometry to two Bi+2.10+ atoms. In the sixteenth I1- site, I1- is bonded in a 2-coordinate geometry to two Bi+2.10+ atoms. In the seventeenth I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms. In the eighteenth I1- site, I1- is bonded in a distorted L-shaped geometry to two Bi+2.10+ atoms.
Yb2OBr2 is alpha Niobium phosphide-derived structured and crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one Yb2OBr2 cluster. Yb2+ is bonded in a linear geometry to one O2- and one Br1- atom. The Yb–O bond length is 2.06 Å. The Yb–Br bond length is 2.66 Å. O2- is bonded in a linear geometry to two equivalent Yb2+ atoms. Br1- is bonded in a single-bond geometry to one Yb2+ atom.
Eu2Cl2F is alpha Niobium phosphide-derived structured and crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one Eu2Cl2F cluster. Eu is bonded in a linear geometry to one Cl and one F atom. The Eu–Cl bond length is 2.55 Å. The Eu–F bond length is 2.33 Å. Cl is bonded in a single-bond geometry to one Eu atom. F is bonded in a linear geometry to two equivalent Eu atoms.
The development of white LEDs for solid state lighting (SSL) has been driven in recent years by phosphor converted LEDs (pc-LEDs). However, losses (known as Stokes’ losses) between the blue pump LED and phosphor impose a fundamental efficiency limit of ~300 lm/W on pc-LEDs. White light can also be generated from color mixed LEDs (cm-LEDs), which employ red, green, blue, and amber LEDs and have a fundamental efficiency limit of ~400 lm/W. Efficient group III-nitride materials are used for the blue LED, while efficient group III-phosphide materials are used for the red LED component. Currently, the poor efficiency of green and amber LEDs (i.e. the “green gap”) is the primary limitation for cm-LEDs. Relative to nitride-based blue LEDs, green and amber nitride LEDs suffer from lower radiative recombination rates and higher nonradiative recombination rates, which ultimately lead to reduced internal quantum efficiency (IQE). The IQE represents the portion of all electron-hole recombination events that result in a photon. In addition, long-wavelength LEDs have lower electrical efficiency (EE) compared to their blue counterparts. Addressing the green gap, would ultimately enable cm-LEDs that rival or exceed the performance of pc-LEDs. Our project focused on III-nitride materials growth and characterization, device fabrication and testing, and semiconductor physics to understand efficiency limitations of green LEDs and develop solutions to these challenges. Insights gained during our research has led to novel long-wavelength LED designs which will enable efficient solid-state lighting.
Determining ways to convert natural gas, with zero emissions, and to more value-added materials such as olefins is one of the main goals in my research group. Over this funding period, we explored the chemistry of early-transition metals with metal-nitrogen multiple bonds, specifically titanium and zirconium nitrides, and explored their redox properties, basicity and reactivity with small molecules including greenhouses gases such as carbon dioxide. Some of these work serve as inspiration for the chemistry of important materials such as uranium nitride along with its unprecedented basicity and ability to activate C-H bonds. Using robust chelating templates we also examined rare examples of trivalent group 4 transition metal ions, and studied these spectroscopically. Using early transition metal ions we also explored synthetic routes to new phosphide based products using the phosphaethynolate salt. In addition, we also explored the chemistry of ferrous systems, and redox active ligand that can allow us to reversibly break and make C-S as well as N-N bonds, activate dinitrogen forming unusual MNNM topologies. Our final component describes how we activate methane and dehydrocouple if with a carbene source to form ethylene. Using this information, we also discovered a simple to make iridium catalyst that activate and functionalize methane with 9:1 selectivity for mono-functionalization. We have established a pathway that leads to poisoning of the catalyst and have found optimal conditions for higher selectivity and with over 170 Turnovers.
The objective of our studies was to advance our fundamental understanding of the surface chemistry and heterogeneous processes that occur in solar-driven pyridine-catalyzed CO 2 reduction. Solar-driven CO 2 reduction to produce fuels offers tremendous promise but commercial deployment is impeded by the lack of suitable catalysts that simultaneously provide high efficiency and product selectivity. Pyridine (C 5 H 5 N) has been reported as an effective, selective co-catalyst in the conversion of CO 2 to methanol (CH 3 OH) in photoelectrochemical cells employing gallium phosphide (GaP) photocathodes. However, despite considerable electrochemical characterization and a large number of theoretical considerations, there are still many fundamental questions about the surface chemistry and heterogeneous processes that are involved in the conversion mechanism. Our research was aimed at investigating the role of the electrode surface and heterogeneous processes in this catalysis. Gaining this fundamental understanding of the origin of pyridine’s effectiveness is important to the continued optimization of solar-driven CO 2 reduction.
As one of DOE Battery 500 Seedling projects, Cornell University and EIC Labs investigated and developed i) highly loaded sulfur cathodes (> 3 mg/cm 2 ), ii) hybrid separators, and iii) gel ceramic electrolytes (GCE) to mitigate the low rate capability, shuttling effect and limited cycle life in high performance Li-Sulfur batteries. Scalable nanomanufacturing processes such as air-controlled electrospray (ACES) and gas-assisted electrospinning (GAES) have been utilized to develop directly deposited electrodes and polymer/ceramic hybrid separators. First, in the development of highly loaded cathodes, alternating layers of sulfur impregnated mesoporous carbon and graphene were fabricated via ACES and the resulting layered cathodes and coated separators exhibit higher capacity and capacity retention (about 1,000 mAh/g capacity with less than 0.02% fade/cycles) than single layer cathode or cathode prepared by conventional slurry cast. Alternating layer approach via ACES has been applied to high loading systems (3 - 5 mg S/cm 2 ), demonstrating the potential to increase sulfur utilization and capacity retention. We have also incorporated iron oxides (Fe 3 O 4 ) into S/mesoporous carbon/graphene cathodes to enhance sulfur utilization and mitigation of polysulfide shuttling. and the effect of Fe 3 O 4 in mesoporous carbon and Gr is highly pronounced at high C rates of 1C and 2C cycling performance. To further improve the cathodes at high rates, graphene nanoribbons (GNR) which can promote ion transport were incorporated in the cathode, resulting in 550 mAh/g at 5C/5C rates. Hybrid Li-ion/Li-S cathodes has also been explored to better engage unreacted polysulfides during charge/discharge. S/LFP hybrid cathodes offer higher sulfur utilization and enhanced rate capability, as well as higher areal loading. This study suggests inclusion of iron phosphide (Fe2P) which can chemically interact with polysulfides can further enhance sulfur utilization and mitigation of soluble polysulfides at high rates. Secondly, in the development of hybrid separators, we first employed graphene coating on the commercial polyolefin separators, which exhibits higher capability, better capacity retention and enhanced rate capability. To improve the rate capability with enhanced safety features such as thermal stability and nonflammability, we developed polymer/ceramic hybrids based on thermally stable polyimide (PI) and room temperature curable ceramic precursors such as organopolysilazane (OPSZ) or polysilsesquioxanes (PSSQ), which exhibit no shrinkages up to 300 ºC and non-flammability. To improve mechanical properties and electrochemical stability, polybenzimidazole (PBI) and alumina have been incorporated in polymer/ceramic hybrid separator, replacing PI and OPSZ/PSSQ, respectively. Finally, the gel ceramic electrolyte (GCE) based on ceramic cross linkers have been applied to make Li-S cells even safer and also to mitigate the polysulfide shuttling further. The resulting gel ceramic electrolyte offers improved capacity retention and rate capability, and also effectively mitigates polysulfide shuttling which was also confirmed by modeling. Inclusion of high ion conducting additives into GCE together with polymer/ceramic hybrid separators exhibit the higher ionic conductivity than liquid electrolyte with commercial polyolefin separator. We demonstrated that the developed highly loaded sulfur cathodes, polymer/ceramic hybrid separators and gel ceramic electrolyte can effectively mitigate the low rate capability, shuttling effect and limited cycle life in high performance Li-Sulfur batteries with improved safety.
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Â. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Å. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
This project involves using solar light, a photoabsorber, and a catalyst to split water and produce hydrogen. The Department of Energy (DOE) targets for integrated photoelectrochemical (PEC) cells emphasize cost (electrode cost < $200/m 2 ), performance (> 15% solar to hydrogen (STH) efficiency), and stability (> 6 months electrode lifetime), but most approaches skew toward one specific metric. This project exploited interfacial integration of platinum group metal-free (PGM-free) catalysts on the high performance and high value tandem solar cells to attain or exceed the DOE benchmark STH energy conversion efficiency and durability. This was investigated in two thrusts by developing two PEC devices for direct comparison: the first is a high-performance monolithic device based on state-of-the-art GaInP 2 /GaAs tandem solar cells developed at National Renewable Energy Laboratory (NREL), and the second is a high-value device based on earth-abundant wide band gap photoabsorber materials including oxynitride and hybrid organic-inorganic perovskite (HOIP) coupled with commercial narrow band gap silicon (Si). Both these devices were paired with electrocatalysts developed for this purpose at Rutgers University by adapting them to thin films on the photoabsorbers. These catalysts are based on the hydrogen evolution reaction (HER) catalysts (Ni 5 P 4 ), oxygen evolution reaction (OER) catalysts (LiCo 2 O 4 ) previously developed at Rutgers for high-efficiency electrolyzers. For using the high-performance tandem solar cell and Ni 5 P 4 catalysts, we achieved a durability of > 200 h at a STH efficiency of > 10%. For using the high-value wide band gap single junction solar cells on n + Si, we achieved 0.73 mA/cm 2 at 1.23V vs reversible hydrogen electrode (RHE) and -15.9 mA/cm 2 at 0V vs RHE using the oxynitride- and HOIP-based photoelectrodes, respectively. After comparing their photocurrent densities, we down selected the HOIP photoabsorber to couple Si for fabrication of a tandem photocathode. However, due to the COVID-19 pandemic, both the laboratories at Rutgers and NREL were locked down for three months and reopened only partially in 2020. The HOIP/Si tandem photocathode using robust nickel phosphide thin film catalysts cannot be developed within the project period, which is expected to achieve a STH efficiency of > 20%. Also, the low-cost LiCo 2 O 4 OER catalysts need to replace the benchmark IrO 2 for evaluation. Finally, techonomic analysis of full high-performance and high-value integrated PEC devices needs to be carried out for comparison in terms of cost.
Quantum dots (QDs) have been used in commercial solid-state lighting (SSL) applications to improve the energy efficiency of light generation at warm color temperatures. By increasing the amount of QDs used in each product, further energy savings are possible; however, traditional QDs contain cadmium, which has regulatory limits on its concentration in consumer products. As described within this final technical report, we have established that heavy-metal free QDs made from indium phosphide (InP) exhibit highly efficient emission at the temperatures and fluxes relevant to SSL. However, the maintenance of this emission is compromised during long term operation due to QD oxidation. We have identified multiple methods to slow the oxidation rate, which has improved the operational stability of these materials more than 200 times longer than at the project start. Beyond these improvements, heavy-metal free QDs require a further hundred-fold increase in stability to enable use in mid-power SSL and a ten-fold increase in stability to enable use in diffuse SSL applications. The outcomes of this project demonstrate feasibility for the use of heavy-metal free QDs in commercial SSL applications with potential use in diffuse SSL applications in the near term (1-2 years) pending market need.
Molybdenum phosphide (MoP) catalyzes the hydrogenation of CO, CO2, and their mixtures to methanol, and it is investigated as a high-activity catalyst that overcomes deactivation issues (e.g., formate poisoning) faced by conventional transition metal catalysts. MoP as a new catalyst for hydrogenating CO2 to methanol is particularly appealing for the use of CO2 as chemical feedstock. Herein, we use a colloidal synthesis technique that connects the presence of MoP to the formation of methanol from CO2, regardless of the support being used. By conducting a systematic support study, we see that zirconia (ZrO2) has the striking ability to shift the selectivity towards methanol by increasing the rate of methanol conversion by two orders of magnitude compared to other supports, at a CO2 conversion of 1.4% and methanol selectivity of 55.4%. In situ X-ray Absorption Spectroscopy (XAS) and in situ X-ray Diffraction (XRD) indicate that under reaction conditions the catalyst is pure MoP in a partially crystalline phase. Results from Diffuse Reflectance Infrared Fourier Transform Spectroscopy coupled with Temperature Programmed Surface Reaction (DRIFTS-TPSR) point towards a highly reactive monodentate formate intermediate stabilized by the strong interaction of MoP and ZrO2. This study definitively shows that the presence of a MoP phase leads to methanol formation from CO2, regardless of support and that the formate intermediate on MoP governs methanol formation rate.
Nanomaterials have found use in a number of relevant energy applications. In particular, nanoscale motifs of binary metal sulfides can function as conversion materials, similar to that of analogous metal oxides, nitrides, or phosphides, and are characterized by their high theoretical capacity and correspondingly low cost. This review focuses on structure–composition–property relationships of specific relevance to battery applications, emanating from systematic attempts to either (1) vary and alter the dimension of nanoscale architectures or (2) introduce conductive carbon-based entities, such as carbon nanotubes and graphene-derived species. In this study, we will primarily concern ourselves with probing metal sulfide nanostructures generated by a microwave-mediated synthetic approach, which we have explored extensively in recent years. This particular fabrication protocol represents a relatively facile, flexible, and effective means with which to simultaneously control both chemical composition and physical morphology within these systems to tailor them for energy storage applications.
To reach the next level benefits of photonic integrated circuits (PICs), the Integrated Photonic Systems Roadmap-International describes the necessity of either heterogeneous or hybrid integration of light sources [1]. A new approach for hybrid integration is Photonic Wire Bonding where 3D nanolithography is used to pattern a polymer waveguide that connects light sources to PIC waveguides. The waveguides resemble electrical wire bonds and essentially do the same as their electrical counterpart for packaging photonic chips together. In order to reap the full benefits of a photonic wire bonds, the light source must be carefully packaged. In this work I seek to expand RIT’s photonic packaging capability by establishing a packaging process to integrate light sources, specifically an Indium Phosphide distributed feedback lasers and a reflective semiconductor optical amplifiers, directly onto a photonic integrated circuits. Another necessary requirement for PIC packaging is densely integrated electrical connectivity. In this thesis I developed a fine pitch flip chip interconnect technique demonstrated using gold stud bumps in conjunction with micro-dispensed solder paste. This work opens the door to high density photonic flip chip applications. The micro-dispensed solder paste dots having diameters 50-125 µm are currently being tested at a pitch of 150 µm . The gold stud bumps are formed with 1mil gold wire creating bumps with a diameter of 40-60 µm depending on specific parameter values. These capabilities will allow RIT to assemble and test novel photonic integrated devices, cutting down on the time and cost associated with third party assembly and tests facilities. Thereby keeping RIT at the forefront of photonic research.
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