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At least 199 records · Page 11

Analysis of native oxides grown on single-crystal CdTe and MgCdTe

Over the course of CdTe photovoltaics development, many refinements to the device stack have been made. One area of current interest is the back contact interface, where surface passivation is critical to prevent recombination at the interface. One candidate material for achieving strong passivation is TeO 2 . Using scanning transmission electron microscopy, we investigate native oxide formations on CdTe and Mg x Cd 1−x Te substrates to better understand the oxides' chemical composition and the interface they form with the material they are grown on. We find that substoichiometric TeO x forms as a native oxide on CdTe, and on Mg x Cd 1−x Te, we found a MgO native oxide. Some TeO x appeared atop the MgO layer, though it was not consistently present. As a result, the native oxides had preferential interface terminations, with Cd terminations at the CdTe/TeO x interface and Te terminations at the Mg x Cd 1−x Te/MgO interface.

14 SOLAR ENERGY↗

bifiPV2020 Bifacial Workshop: A Technology Overview

The virtual bifiPV Workshop was held in July 2020 to provide the solar industry with a forum for sharing and discussing research into bifacial photovoltaic (PV) technology. This report outlines major insights from the workshop to give the reader an overview of the latest developments in bifacial PV technology worldwide, from the lab to the field. Citations are drawn from this workshop unless otherwise noted, with all proceedings available online at bifipvworkshop. com. Presentations for the bifiPV2020 Workshop focused on the following areas: bifacial power plant modeling and simulation, albedo improvements, the development of encapsulants, the durability and reliability of current bifacial technologies, performance comparisons between glass-glass and glass-transparent backsheet configurations, the future of passivated emitter and rear contact (PERC) solar cells, and the growing adoption of n-type solar cells. With 650 GW total PV installed worldwide and 1 TW to come very soon, PERC is now the standard PV cell type produced en masse. However, it is already reaching 23% efficiency, the upper limit for this type of technology. PV modules breaking the 0.5-kW barrier are starting to appear, and the costs of standard PERC technology are already below 0.2 USD/Wp. In 2019, five GW of bifacial PV were installed worldwide. In 2020, the majority of bifacial installations are expected to be located in the United States, China, and Middle East and North Africa (MENA) states. N-type bifacial technologies are becoming increasingly viable and have huge potential to dominate the market in the coming years. With bifacial technology mounted on horizontal single-axis trackers (HSAT), bids below 10 USD/MWh will soon be observed in the MENA region, and later in Chile and the United States. Factory audits and reliability testing can reduce field failures by helping buyers to select producers that follow rigorous quality assurance and quality control processes.

14 SOLAR ENERGY↗

bifiPV2020 Bifacial Workshop: A Technology Overview

The virtual bifiPV Workshop was held in July 2020 to provide the solar industry with a forum for sharing and discussing research into bifacial photovoltaic (PV) technology. This report outlines major insights from the workshop to give the reader an overview of the latest developments in bifacial PV technology worldwide, from the lab to the field. Citations are drawn from this workshop unless otherwise noted. Presentations for the bifiPV2020 Workshop focused on the following areas: bifacial power plant modeling and simulation, albedo improvements, the development of encapsulants, the durability and reliability of current bifacial technologies, performance comparisons between glass-glass and glass-transparent backsheet configurations, the future of passivated emitter and rear contact (PERC) solar cells, and the growing adoption of n-type solar cells. With 650 GW total PV installed worldwide and 1 TW to come very soon, PERC is now the standard PV cell type produced en masse. However, it is already reaching 23% efficiency, the upper limit for this type of technology. PV modules breaking the 0.5-kW barrier are starting to appear, and the costs of standard PERC technology are already below 0.2 USD/Wp. In 2019, five GW of bifacial PV were installed worldwide. In 2020, the majority of bifacial installations are expected to be located in the United States, China, and Middle East and North Africa (MENA) states. N-type bifacial technologies are becoming increasingly viable and have huge potential to dominate the market in the coming years. With bifacial technology mounted on horizontal single-axis trackers (HSAT), bids below 10 USD/MWh will soon be observed in the MENA region, and later in Chile and the United States. Factory audits and reliability testing can reduce field failures by helping buyers to select producers that follow rigorous quality assurance and quality control processes.

14 SOLAR ENERGY↗

Interfacial engineering for high performance carbon-based perovskite solar cells

Perovskite solar cells fabricated with carbon-based counter electrodes demonstrate decreased cost, enhanced simplicity and speed of production, and increased stability compared to those produced with standard metallic electrodes. This significant improvement of device stability, cost reduction, and production scalability indicates a promising direction for commercial development and availability of perovskite solar technology. The main limitation of carbon-based perovskite devices is the flawed contact between the carbon electrode and perovskite film which decreases device quality and performance, thereby necessitating treatment of the carbon/perovskite interface. This review provides an overview of the current state of carbon-based perovskite devices, discusses progress in carbon/perovskite interface modification methods, and suggests future directions for the research of carbon electrode/perovskite film interface manipulation.

14 SOLAR ENERGY↗

Comparison of advanced thermal and electrical storage for parabolic dish solar thermal power systems

Parabolic dish solar concentrator cluster concepts are explored, with attention given to thermal storage systems coupled to Stirling and Brayton cycle power conversion devices. Sensible heat storage involving molten salt (NaOH), liquid sodium, and solid cordierite bricks are considered for 1500 F thermal storage systems. Latent heat storage with NaF-MgF2 phase change materials are explored in terms of passive, active, and direct contact designs. Comparisons are made of the effectiveness of thermal storage relative to redox, Na-S, Zn-Cl, and Zn-Br battery storage systems. Molten lead trickling down through a phase change eutectic, the NaF-MgF2, formed the direct contact system. Heat transport in all systems is effected through Inconel pipes. Using a cost goal of 120-150 mills/kWh as the controlling parameter, sensible heat systems with molten salts transport with either Stirling or Brayton engines, or latent heat systems with Stirling engines, and latent heat-Brayton engine with direct contact were favored in the analyses. Battery storage systems, however, offered the most flexibility of applications.

Fujita, T.↗

Chemical stability enhancement of lithium conducting solid electrolyte plates using sputtered LiPON thin film

Sputter deposition of LiPON films directly onto high Li+ conductivity solid electrolyte plates has been investigated as a means to minimize the reactivity of the plates to metallic Li. The LiPON films were shown to effectively passivate the plates in contact with metallic Li, in contrast to unpassivated plates that reacted immediately in contact with Li metal.

LiPON lithium metals electrolyte plates↗

Field Testing of PID-p Susceptible Bifacial PERC Modules: Impact of Light, Voltage and Module History ​

This work investigates the potential induced degradation-polarization (PID-p) of bifacial passivated emitter and rear contact (PERC) modules installed in the field at the Florida Solar Energy Center. 22 modules were stressed over 1 year under various voltage (-1500V, -3500, +1500V) and mounting configurations (close to ground, 2 meters from ground, close to roof). The positively stressed modules were anticipated to have experiences PID-p on their front side. However, no degradation was observed, as the light-induced recovery effect effectively counteracted the degradation. The negatively stressed modules experienced Pmax drops during 2 weeks before stabilizing at 5-6% loss. I-V and EL characteristics suggest a PID-p degradation on the rear side. Lower degradation rates are observed with lower voltage and when the mounting configuration allows more albedo light on the rear side to compensate for the degradation. PID-p is observed to stabilize at similar level for the voltage and mounting configuration tested with slightly lower Pmax in winter. EL imaging reveals that cells are not degrading at the same rate across a module. Some cells get darker and then brighter which corresponds to the silicon/passivation interface going through depletion and then inversion when enough positive charges are accumulated. After full light-recovery, the modules were tested again along with 22 brand-new ones to assess the impact of the module history. Results confirmed the trends observed in the first year with PID-p occurring at voltage as low as -600V and recovered modules degrading faster than brand-new ones.

14 SOLAR ENERGY↗

Point contact silicon solar cells

The construction of a 22.2% efficient single-crystal silicon solar cell fabricated at Stanford University is described. The cell dimensions were 3 x 5 mm and 100 microns thick with a base lifetime of 500 microseconds. The cell featured light trapping between a texturized top surface and a reflective bottom surface, small point contact diffusions, alternating between n-type and p-type in a polka-dot pattern on the bottom surface, and a surface passivation on all surfaces between contact regions.

Swanson, R. M.↗

Understanding What Limits the Voltage of Polycrystalline CdSeTe Solar Cells

The origin of voltage deficits in polycrystalline cadmium selenide telluride (CdSeTe) solar cells is unclear. Here, we present a comprehensive voltage loss analysis performed on state-of-the-art CdSeTe devices - fabricated at Colorado State University and First Solar - using photoluminescence techniques, including external radiative efficiency (ERE) measurements. More specifically, we report the thermodynamic voltage limit Voc,ideal, internal voltage iVoc and external voltage Voc of partially and fully finished cells fabricated with different dopant species, dopant concentrations and back contacts. Arsenic-doped aluminium-oxide-passivated cells made at Colorado State University present remarkably high ERE (>1%) - translating into iVoc above 970 mV - but suffer from poor back-contact selectivity. On the other hand, arsenic-doped devices from First Solar present almost perfect carrier selectivity (Voc=iVoc), leading to Voc above 840 mV, and are limited by recombination in various parts of the device. Thus, development of contact structures that are both passivating and selective in combination with highly luminescent absorbers is key to reducing voltage losses.

CdSeTe devices↗

Buried Interfaces in Organic Photocathodes for H 2 Evolution: Fermi-Level Pinning and Recombination

Herein, we demonstrate how Fermi-level pinning at buried contacts impacts solar fuel generation in all-polymer photocathodes by systematically comparing the effects of work function, hydroxyl coverage, and hydrogen evolution using chemically modified indium tin oxide (ITO) supports. Photovoltages and net photocathode performance are improved when the ITO is passivated using phosphonic acids, independent of work function, suggesting that the passivation reduces Fermi-level pinning at the buried interface arising from blended heterojunction interactions with surface metal hydroxyls. Transient photovoltage decay reveals differences in recombination mechanisms, supported by light intensity-dependent measurements. Briefly, nonpassivated, hydrophilic contacts exhibit trap-assisted recombination, while passivated, hydrophobic contacts follow bimolecular recombination. We then investigate changes in electroactivity of hole-transfer processes as a function of scan rate and repetitive cycling using a diffusion-controlled molecular redox probe, analogous to a hole-only device achieved via the electrolyte. The nonpassivated buried contacts exhibit higher overpotentials for oxidation, indicative of hole injection/extraction barriers. We observe irreversible electron transfer via the hole-transport level of the blended heterojunction and a strong cycle dependence, consistent with changes in the hole trap state density. Passivation results in more reversible redox behaviors, consistent with more Ohmic-like contacts. Collectively, these results provide context toward the realization of durable organic photoelectrodes with optimized photovoltages and net solar-to-hydrogen conversion efficiencies via fundamental understanding of the rates of carrier generation, recombination, and transport in high-dielectric aqueous environments and opportunities to characterize buried interfaces under device-relevant electric fields.

buried interfaces↗

Fermi Level Engineering of Passivation and Electron Transport Materials for p-Type CuBi 2 O 4 Employing a High-Throughput Methodology

Metal oxide semiconductors are promising for solar photochemistry if the issues of excessive charge carrier recombination and material degradation can be resolved, which are both influenced by surface quality and interface chemistry. Coating the semiconductor with an overlayer to passivate surface states is a common remedial strategy but is less desirable than application of a functional coating that can improve carrier extraction and reduce recombination while mitigating corrosion. Here, a data-driven materials science approach utilizing high-throughput methodologies, including inkjet printing and scanning droplet electrochemical cell measurements, is used to create and evaluate multi-element coating libraries to discover new classes of candidate passivation and electron-selective contact materials for p-type CuBi 2 O 4 . The optimized overlayer (Cu 1.5 TiO z ) improves the onset potential by 110 mV, the photocurrent by 2.8×, and the absorbed photon-to-current efficiency by 15.5% compared to non-coated photoelectrodes. It is shown that these enhancements are related to reduced surface recombination through passivation of surface defect states as well as improved carrier extraction efficiency through Fermi level engineering. This work presents a generalizable, high-throughput method to design and optimize passivation materials for a variety of semiconductors, providing a powerful platform for development of high-performance photoelectrodes for incorporation into solar-fuel generation systems.

36 MATERIALS SCIENCE↗

Spacecraft capture and docking system

A system for capturing and docking an active craft to a passive craft has a first docking assembly on the active craft with a first contact member and a spike projecting outwardly, a second docking assembly on the passive craft having a second contact member and a flexible net deployed over a target area with an open mesh for capturing the end of the spike of the active craft, and a motorized net drive for reeling in the net and active craft to mate with the passive craft's docking assembly. The spike has extendable tabs to allow it to become engaged with the net. The net's center is coupled to a net spool for reeling in. An alignment funnel has inclined walls to guide the net and captured spike towards the net spool. The passive craft's docking assembly includes circumferentially spaced preload wedges which are driven to lock the wedges against the contact member of the active craft. The active craft's docking assembly includes a rotary table and drive for rotating it to a predetermined angular alignment position, and mating connectors are then engaged with each other. The system may be used for docking spacecraft in zero or low-gravity environments, as well as for docking underwater vehicles, docking of ancillary craft to a mother craft in subsonic flight, in-flight refueling systems, etc.

Kong, Kinyuen↗

Characterization of 4H-SiC Low Gain Avalanche Detectors (LGADs)

4H-SiC Low Gain Avalanche Detectors (LGADs) have been fabricated and characterized. The devices employ a circular mesa design with low-resistivity contacts and an SiO 2 passivation layer. The I–V and C–V characteristics of the 4H-SiC LGADs are compared with complementary 4H-SiC PiN diodes to confirm a high breakdown voltage and low leakage current. Both LGADs and PiN diodes were irradiated with alpha particles from a $^{210}_{84}$Po source. The charge collected by each device was compared, and it was observed that low-gain charge carrier multiplication is achieved in the 4H-SiC LGAD.

43 PARTICLE ACCELERATORS↗

Sensitivity of a Subject-specific Ankle Sprain Simulation to Extrinsic Versus Intrinsic Biomechanical Factors

Ankle sprains are the most common musculoskeletal injury in sport and military activity, despite existing prophylactic strategies. The purpose of this report was to develop a probabilistic simulation of lateral ankle sprains during single-limb drop landing, towards accelerating innovation in ankle sprain prevention. A deterministic, subject-specific musculoskeletal model was extended with automation and probabilistic distributions on sprain-related biomechanical factors. Probabilistic simulations were generated using traditional Monte Carlo techniques and the advanced mean value method, a more computationally-efficient approach. Predicted distributions of peak ankle joint rotations, velocities, and moments borne by supporting passive structures agreed favorably with the deterministic model and with reports of real sprain biomechanics. Parameter sensitivities identified that predictions were most strongly influenced by drop height, subtalar joint posture at contact, invertor/evertor co-activation, and passive ankle stiffness. The advanced mean value method predicted confidence bounds comparable to a 1000-trial Monte Carlo simulation, and required only 14 model evaluations and 4-min processing time. The extended probabilistic simulation may be useful to virtually test new prophylactic strategies for ankle sprains, and is made available for open-source use (https://simtk.org/projects/sprain-sim).

60 APPLIED LIFE SCIENCES↗

Passive and compact liquid metal heat switch

A passive heat switch device is disclosed that includes a casing defining a closed channel, as well as a passive thermal actuator and liquid slug positioned inside the closed channel. The closed channel includes a heat conducting region made of a heat conducting material and an insulating region made of an insulating material. The passive thermal actuator is thermally coupled to the heat conducting material of the heat conducting region and extends into the insulating region of the closed channel. The passive thermal actuator deforms when an actuator temperature falls within a switching temperature range. The liquid slug is positioned within the closed channel and contacts at least a portion of the passive thermal actuator and the closed channel and is configured to move along the closed channel between the insulating region and the thermally conductive region in response to deformation of the passive thermal actuator.

42 ENGINEERING↗

Electrochemical evaluation of the p-Si/conducting polymer interfacial properties

Results are presented from an experimental investigation of the contact resistance and interfacial properties of a p-Si/conducting polymer interface for solar cell applications. The electronic character of the polymer/semiconductor function is determined by studying the electrochemical behavior of both poly(isothianapthene) (PITN) and polypyrrole (PP) in an acetonitrile solution on p-silicon electrodes. The results obtained indicate that while PITN is intrinsically more conductive than PP, neither passivates surface states nor forms ohmic contact.

Nagasubramanian, G.↗

Cracked Film Lithography with CuGaO x Buffers for Bifacial CdTe Photovoltaics

Abstract Bifacial CdTe solar cells with greater power density than the monofacial baselines are demonstrated by using a CuGaO x rear interface buffer that passivates while reducing sheet resistance and contact resistance. Inserting CuGaO x between the CdTe and Au increases mean power density from 18.0 ± 0.5 to 19.8 ± 0.4 mW cm −2 for one sun front illumination. However, coupling CuGaO x with a transparent conductive oxide leads to an electrical barrier. Instead, CuGaO x is integrated with cracked film lithography (CFL)‐patterned metal grids. CFL grid wires are spaced narrowly enough (≈10 µm) to alleviate semiconductor resistance while retaining enough passivation and transmittance for a bifacial power gain: bifacial CuGaO x /CFL grids generate 19.1 ± 0.6 mW cm −2 for 1 sun front + 0.08 sun rear illumination and 20.0 ± 0.6 mW cm −2 at 1 sun front + 0.52 sun rear—the highest reported power density at field albedo conditions for a scaled polycrystalline absorber.

14 SOLAR ENERGY↗

Chalcogen back surface field layer

Kesterite photovoltaic devices having a back surface field layer are provided. In one aspect, a method of forming a photovoltaic device includes: forming a complete photovoltaic device having a substrate, an electrically conductive layer on the substrate, an absorber layer on the electrically conductive layer, a buffer layer on the absorber layer, and a transparent front contact on the buffer layer; removing the substrate and the electrically conductive layer from the complete photovoltaic device to expose a backside surface of the absorber layer; forming a passivating layer on the backside surface of the absorber layer; and forming a high work function back contact on the passivating layer. A photovoltaic device having a passivating layer is also provided.

14 SOLAR ENERGY↗