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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Low Temperature Creep of Hot-Extruded Near-Stoichiometric NiTi Shape Memory Alloy: Isothermal Creep - Part I

This two-part paper is the first published report on the long term, low temperature creep of hot-extruded near-stoichiometric NiTi. Constant load tensile creep tests were conducted on hot-extruded near-stoichiometric NiTi at 300, 373 and 473 K under initial applied stresses varying between 200 and 350 MPa as long as 15 months. These temperatures corresponded to the martensitic, two-phase and austenitic phase regions, respectively. Normal primary creep lasting several months was observed under all conditions indicating dislocation activity. Although steady-state creep was not observed under these conditions, the estimated creep rates varied between 10(exp -10) and 10(exp -9)/s. The creep behavior of the two phases showed significant differences. The martensitic phase exhibited a large strain on loading followed by a primary creep region accumulating a small amount of strain over a period of several months. The loading strain was attributed to the detwinning of the martensitic phase whereas the subsequent strain accumulation was attributed to dislocation glide-controlled creep. An "incubation period" was observed before the occurrence of detwinning. In contrast, the austenitic phase exhibited a relatively smaller loading strain followed by a primary creep region, where the creep strain continued to increase over several months. It is concluded that the creep of the austenitic phase occurs by a dislocation glide-controlled creep mechanism as well as by the nucleation and growth of deformation twins.

Raj, S. V.↗
DOE OSTI2018

Hybrid memory module bridge network and buffers

Systems, apparatuses, and methods for implementing a hybrid memory module bridge network and buffers are disclosed. A system includes one or more host processors and multiple memory modules. Each memory module includes a relatively low pin count, high-bandwidth serial link to one or more other memory modules to perform inter-memory data transfers without consuming host-memory bandwidth. In one embodiment, a first memory module acts as a cache and a second memory module acts as the main memory for the system. The traffic between the host and the first memory module utilizes a first interface, and the cache traffic between the first and second memory modules utilizes a second interface. Cache line fill and writeback transfers between the first and second memory modules occur in parallel with timing-critical cache demand accesses from the host, in a latency-tolerant and buffered manner, without interfering with the cache demand accesses.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2017

Robust resistive memory devices using solution-processable metal-coordinated azo aromatics

Non-volatile memories will play a decisive role in the next generation of digital technology. Flash memories are currently the key player in the field, yet they fail to meet the commercial demands of scalability and endurance. Resistive memory devices, and in particular memories based on low-cost, solution-processable and chemically tunable organic materials, are promising alternatives explored by the industry. However, to date, they have been lacking the performance and mechanistic understanding required for commercial translation. Here we report a resistive memory device based on a spin-coated active layer of a transition-metal complex, which shows high reproducibility (~350 devices), fast switching (≤30 ns), excellent endurance (~10 12 cycles), stability (>10 6 s) and scalability (down to ~60 nm 2 ). In situ Raman and ultraviolet–visible spectroscopy alongside spectroelectrochemistry and quantum chemical calculations demonstrate that the redox state of the ligands determines the switching states of the device whereas the counterions control the hysteresis. This insight may accelerate the technological deployment of organic resistive memories.

Goswami, Sreetosh↗
NASA NTRS2012

Compact, Low-Force, Low-Noise Linear Actuator

Actuators are critical to all the robotic and manipulation mechanisms that are used in current and future NASA missions, and are also needed for many other industrial, aeronautical, and space activities. There are many types of actuators that were designed to operate as linear or rotary motors, but there is still a need for low-force, low-noise linear actuators for specialized applications, and the disclosed mechanism addresses this need. A simpler implementation of a rotary actuator was developed where the end effector controls the motion of a brush for cleaning a thermal sensor. The mechanism uses a SMA (shape-memory alloy) wire for low force, and low noise. The linear implementation of the actuator incorporates a set of springs and mechanical hard-stops for resetting and fault tolerance to mechanical resistance. The actuator can be designed to work in a pull or push mode, or both. Depending on the volume envelope criteria, the actuator can be configured for scaling its volume down to 4 2 1 cm3. The actuator design has an inherent fault tolerance to mechanical resistance. The actuator has the flexibility of being designed for both linear and rotary motion. A specific configuration was designed and analyzed where fault-tolerant features have been implemented. In this configuration, an externally applied force larger than the design force does not damage the active components of the actuator. The actuator housing can be configured and produced using cost-effective methods such as injection molding, or alternatively, its components can be mounted directly on a small circuit board. The actuator is driven by a SMA -NiTi as a primary active element, and it requires energy on the order of 20 Ws(J) per cycle. Electrical connections to points A and B are used to apply electrical power in the resistive NiTi wire, causing a phase change that contracts the wire on the order of 5%. The actuation period is of the order of a second for generating the stroke, and 4 to 10 seconds for resetting. Thus, this design allows the actuator to work at a frequency of up to 0.1 Hz. The actuator does not make use of the whole range of motion of the SMA material, allowing for large margins on the mechanical parameters of the design. The efficiency of the actuator is of the order of 10%, including the margins. The average dissipated power while driving at full speed is of the order of 1 W, and can be scaled down linearly if the rate of cycling is reduced. This design produces an extremely quiet actuator; it can generate a force greater than 2 N and a stroke greater than 1 cm. The operational duration of SMA materials is of the order of millions of cycles with some reduced stroke over a wide temperature range up to 150 C.

Badescu, Mircea↗
NASA NTRS2012

Compact, Low-Force, Low-Noise Linear Actuator

Actuators are critical to all the robotic and manipulation mechanisms that are used in current and future NASA missions, and are also needed for many other industrial, aeronautical, and space activities. There are many types of actuators that were designed to operate as linear or rotary motors, but there is still a need for low-force, low-noise linear actuators for specialized applications, and the disclosed mechanism addresses this need. A simpler implementation of a rotary actuator was developed where the end effector controls the motion of a brush for cleaning a thermal sensor. The mechanism uses a SMA (shape-memory alloy) wire for low force, and low noise. The linear implementation of the actuator incorporates a set of springs and mechanical hard-stops for resetting and fault tolerance to mechanical resistance. The actuator can be designed to work in a pull or push mode, or both. Depending on the volume envelope criteria, the actuator can be configured for scaling its volume down to 4x2x1 cu cm. The actuator design has an inherent fault tolerance to mechanical resistance. The actuator has the flexibility of being designed for both linear and rotary motion. A specific configuration was designed and analyzed where fault-tolerant features have been implemented. In this configuration, an externally applied force larger than the design force does not damage the active components of the actuator. The actuator housing can be configured and produced using cost-effective methods such as injection molding, or alternatively, its components can be mounted directly on a small circuit board. The actuator is driven by a SMA -NiTi as a primary active element, and it requires energy on the order of 20 Ws(J) per cycle. Electrical connections to points A and B are used to apply electrical power in the resistive NiTi wire, causing a phase change that contracts the wire on the order of 5%. The actuation period is of the order of a second for generating the stroke, and 4 to 10 seconds for resetting. Thus, this design allows the actuator to work at a frequency of up to 0.1 Hz. The actuator does not make use of the whole range of motion of the SMA material, allowing for large margins on the mechanical parameters of the design. The efficiency of the actuator is of the order of 10%, including the margins. The average dissipated power while driving at full speed is of the order of 1 W, and can be scaled down linearly if the rate of cycling is reduced. This design produces an extremely quiet actuator; it can generate a force greater than 2 N and a stroke greater than 1 cm. The operational duration of SMA materials is of the order of millions of cycles with some reduced stroke over a wide temperature range up to 150 C.

Badescu, Mircea↗
DOE OSTI2014

On the bipolar resistive-switching characteristics of Al₂O₃- and HfO₂-based memory cells operated in the soft-breakdown regime

In this article, we investigate extensively the bipolar-switching properties of Al₂O₃- and HfO₂-based resistive-switching memory cells operated at low current down to <1 μA. We show that the switching characteristics differ considerably from those typically reported for larger current range (>15 μA), which we relate as intrinsic to soft-breakdown (SBD) regime. We evidence a larger impact of the used switching-oxide in this current range, due to lower density of oxygen-vacancy (V{sub o}) defects in the SBD regime. In this respect, deep resetting and large memory window may be achieved using the stoichiometric Al₂O₃ material due to efficient V{sub o} annihilation, although no complete erasure of the conductive-filament (CF) is obtained. We finally emphasize that the conduction may be described by a quantum point-contact (QPC) model down to very low current level where only a few V{sub o} defects compose the QPC constriction. The large switching variability inherent to this latter aspect is mitigated by CF shape tuning through adequate engineering of an Al₂O₃\HfO₂ bilayer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

A Low-Rank Multigrid Method for the Stochastic Steady-State Diffusion Problem

We study a multigrid method for solving large linear systems of equations with tensor product structure here. Such systems are obtained from stochastic finite element discretization of stochastic partial differential equations such as the steady-state diffusion problem with random coefficients. When the variance in the problem is not too large, the solution can be well approximated by a low-rank object. In the proposed multigrid algorithm, the matrix iterates are truncated to low rank to reduce memory requirements and computational effort. The technique is proved convergent with an analytic error bound. Numerical experiments show its effectiveness in solving the Galerkin systems compared to the original multigrid solver, especially when the number of degrees of freedom associated with the spatial discretization is large.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2025

DEVELOPMENT OF INEXPENSIVE HIGH TEMPERATURE NITI-BASED SHAPE MEMORY ALLOYS FOR POWDER BED ADDITIVE MANUFACTURING

NiTi and NiTi-based Shape Memory Alloys (SMA) exhibit a reversible solid-state phase transformation from martensite to austenite driven by thermal energy. High temperature (Mf>100°C) SMAs are martensite at room temperature and can be fabricated into solid-state actuators that return to a pre-programmed shape against a designed load after heating to transformation threshold. Reactive as-fabricated additively manufactured parts (4-D printing) is the current state of the art in manufacturing of SMAs but requires compositions compliant to rapid solidification. Existing actuator designs are developed from commercially available, highly investigated material compositions. However, existing high temperature high performance (high actuation strain, low thermal hysteresis) shape memory alloys contain significant (>10% at.) portions of high-cost Platinum Group Metals (PGMs). It is of significant scientific interest to investigate material compositions that are peer performing or superior to PGMs whose constituent elements represent a significant cost savings. Shape memory alloy properties vary significantly with small (0.1% at.) compositional changes making robust investigative sample sets very large. Computational material design can be deployed to shrink the compositional space of possible alloy combinations and reduce the experimental load in material discovery. Investigating shape memory effect (SME) and validating process additive process parameters for a single novel composition is cost intensive in both time and consumed materials. Additionally, sub-optimal processing, oxygen, or solidification rate sensitivity could render additively manufacturing specimens without micro, macro cracks, or significant chemical variance impossible. Unfortunately, such failure susceptibility cannot be simulated. Therefore, a research pathway to validate novel shape memory alloy compositions for powder bed fusion additive manufacturing without the need for powdered feedstock is also proposed. This research investigates novel high temperature shape memory alloys for actuators without platinum group alloying elements to discover one that could be commercially viable as an additive manufacturing feedstock.

Sundermann, Tayler↗
DOE OSTI2025

Erbium quantum memory platform with long optical coherence via back-end-of-line deposition on foundry-fabricated photonics

Realizing scalable quantum interconnects necessitates the integration of solid-state quantum memories with foundry photonics processes. While prior photonic integration efforts have relied upon specialized, laboratory-scale fabrication techniques, this work demonstrates the monolithic integration of a quantum memory platform with low-loss foundry photonic circuits via back-end-of-line deposition. We deposited thin films of titanium dioxide (Ti⁢O 2 ) doped with erbium (Er) onto silicon nitride nanophotonic waveguides and studied Er optical coherence at subkelvin temperatures with photon echo techniques. Furthermore, we suppressed optical dephasing through ex-situ oxygen annealing and optimized measurement conditions, which yielded an optical coherence time of 64 μ⁢s (a 5-kHz homogeneous linewidth) and slow spectral diffusion of 27 kHz over 4 ms, results that are comparable to state-of-the-art Er nanophotonic devices. Combined with second-long electron spin lifetimes and demonstrated electrical control of Er emission, our findings establish Er:Ti⁢O 2 on foundry photonics as a manufacturable platform for ensemble and single-ion quantum memories.

Electro-optic effects↗
DOE OSTI2023

Spin-orbital correlations from complex orbital order in MgV 2⁢ O 4

MgV 2 ⁢O 4 is a spinel based on magnetic V 3+ ions, which host both spin (𝑆 = 1) and orbital (𝑙 eff = 1) moments. Owing to the underlying pyrochlore coordination of the magnetic sites, the spins in MgV 2 ⁢O 4 only antiferromagnetically order once the frustrating interactions imposed by the 𝐹⁡𝑑⁢$\overline{3}$⁢𝑚 lattice are broken through an orbitally-driven structural distortion at T 𝑆 ≃ ⁢60 K. Consequently, a Néel transition occurs at T 𝑁 ≃ ⁢40 K. Low-temperature spatial ordering of the electronic orbitals is fundamental to both the structural and magnetic properties; however, considerable discussion on whether it can be described by complex or real orbital ordering is ambiguous. We apply neutron spectroscopy to resolve the nature of the orbital ground state and characterize hysteretic spin-orbital correlations using x-ray and neutron diffraction. Neutron spectroscopy finds multiple excitation bands and we parametrize these in terms of a multilevel (or excitonic) theory based on the orbitally degenerate ground state. Meaningful for the orbital ground state, we report an “optical-like” mode at high energies that we attribute to a crystal-field-like excitation from the spin-orbital 𝑗 eff = 2 ground-state manifold to an excited 𝑗 eff =1 energy level. We parametrize the magnetic excitations in terms of a Hamiltonian with spin-orbit coupling and local crystalline electric field distortions resulting from deviations from perfect octahedra surrounding the V 3+ ions. We suggest that this provides compelling evidence for complex orbital order in MgV 2⁢ O 4 . We then apply the consequences of this model to understand hysteretic effects in the magnetic diffuse scattering where we propose that MgV 2⁢ O 4 displays a high-temperature orbital memory of the low-temperature spin order.

Frustrated magnetism↗
DOE OSTI2021

High-T c Superconducting Memory Cell

In this paper, operational principles of a cryogenic memory cell that utilizes high-temperature superconductors (high-T c ) are presented. Such a cell consists of three inductively coupled Josephson junctions coupled via inductors. Design and operational logic of this type of cell were recently introduced and demonstrated for low temperature 4 K environment. The basic memory cell operations (read, write, reset) can be implemented on the same simple circuit and both destructive and non-destructive memory cell operations can be realized. Here, we present the design principles and computational validation of basic memory cell operations (write, read, and reset) for the high-T c memory cell. In conclusion, our results for the high-T c memory cell operations show very good resemblance with the previously presented low-temperature 4 K memory cell operations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

A fast band–Krylov eigensolver for macromolecular functional motion simulation on multicore architectures and graphics processors

We introduce a new iterative Krylov subspace-based eigensolver for the simulation of macromolecular motions on desktop multithreaded platforms equipped with multicore processors and, possibly, a graphics accelerator (GPU). The method consists of two stages, with the original problem first reduced into a simpler band-structured form by means of a high-performance compute-intensive procedure. This is followed by a memory-intensive but low-cost Krylov iteration, which is off-loaded to be computed on the GPU by means of an efficient data-parallel kernel. The experimental results reveal the performance of the new eigensolver. Concretely, when applied to the simulation of macromolecules with a few thousands degrees of freedom and the number of eigenpairs to be computed is small to moderate, the new solver outperforms other methods implemented as part of high-performance numerical linear algebra packages for multithreaded architectures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Giant orbital magnetoelectric effect and current-induced magnetization switching in twisted bilayer graphene

Recently, quantum anomalous Hall effect with spontaneous ferromagnetism was observed in twisted bilayer graphenes (TBG) near 3/4 filling. Importantly, it was observed that an extremely small current can switch the direction of the magnetization. This offers the prospect of realizing low energy dissipation magnetic memories. However, the mechanism of the current-driven magnetization switching is poorly understood as the charge currents in graphenes are generally believed to be non-magnetic. In this work, we demonstrate that in TBG, the twisting and substrate induced symmetry breaking allow an out of plane orbital magnetization to be generated by a charge current. Moreover, the large Berry curvatures of the flat bands give the Bloch electrons large orbital magnetic moments so that a small current can generate a large orbital magnetization. We further demonstrate how the charge current can switch the magnetization of the ferromagnetic TBG near 3/4 filling as observed in the experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Near-field infrared imaging of polar domain walls in Ni 3 TeO 6

Domain walls are leading platforms for the development of ultra-low power switching and memory devices due to their potential to be moved, created, and erased in real time and to mitigate heat flux. Interface vs wavelength size effects unfortunately preclude the measurement of phonons by traditional spectroscopic techniques, so it has been challenging to unravel the primary excitations of the lattice and the symmetries that they represent across these functional interfaces. In this work, we employ synchrotron-based near-field infrared nanospectroscopy to image polar domain walls in multiferroic Ni 3 TeO 6 . This is a unique platform because, in addition to hosting polar and chiral domains that are interlocked with one another, Ni 3 TeO 6 displays both charged and neutral interfaces depending upon the direction allowing the development of structure–property relations. From a local structure and a strain point of view, we find charged walls that are twice as wide as neutral walls as well as strong frequency shifts of vibrational modes across the charged walls. The near-field amplitude drops across the walls as well. We discuss these trends in terms of polarization and chirality as well as phonon lifetimes at functional interfaces.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Static multiresolution grids with inline hierarchy information for cosmic ray propagation

For numerical simulations of cosmic-ray propagation fast access to static magnetic field data is required. We present a data structure for multiresolution vector grids which is optimized for fast access, low overhead and shared memory use. The hierarchy information is encoded into the grid itself, reducing the memory overhead. Benchmarks show that in certain scenarios the differences in deflections introduced by sampling the magnetic field model can be significantly reduced when using the multiresolution approach.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2025

A protective and broadly binding antibody class engages the influenza virus hemagglutinin head at its stem interface

ABSTRACT Influenza infection and vaccination impart strain-specific immunity that protects against neither seasonal antigenic variants nor the next pandemic. However, antibodies directed to conserved sites can confer broad protection. Here, we identify and characterize a class of human antibodies that engage a previously undescribed, conserved epitope on the influenza hemagglutinin (HA) protein. Prototype antibody S8V1-157 binds at the normally occluded interface between the HA head and stem. Antibodies to this HA head–stem interface epitope are non-neutralizingin vitrobut protect against lethal influenza infection in mice. These antibodies bind to most influenza A subtypes and seasonal human variants, and are present at low frequencies in the memory B cell populations of multiple human donors. Vaccines designed to elicit these antibodies might contribute to “universal” influenza immunity. IMPORTANCE Antibodies to the influenza virus hemagglutinin (HA) protein confer the strongest protection against infection. Human antibodies elicited by infection and/or vaccination fail to protect against antigenically novel animal, pandemic, or human seasonal viruses. Improved vaccines are needed. We identify a novel class of antibodies that bind most divergent HA subtypes and all seasonal human HA antigenic variants tested. These antibodies confer protection from lethal influenza challenge in animal models. The corresponding epitope on the HA head is occluded by its interaction with the stem and is inaccessible in the well-resolved prefusion state. The immunogenicity of this head–stem interface indicates that poorly understood conformations of HA presenting widely conserved surfaces are explored in biochemical, cell-based, andin vivoassays. Head–stem interface antibodies warrant further investigation as an avenue to improve influenza vaccines and therapeutics.

Microbiology↗
DOE OSTI2015

A Survey of Architectural Techniques for Near-Threshold Computing

Energy efficiency has now become the primary obstacle in scaling the performance of all classes of computing systems. In low-voltage computing and specifically, near-threshold voltage computing (NTC), which involves operating the transistor very close to and yet above its threshold voltage, holds the promise of providing many-fold improvement in energy efficiency. However, use of NTC also presents several challenges such as increased parametric variation, failure rate and performance loss etc. Our paper surveys several re- cent techniques which aim to offset these challenges for fully leveraging the potential of NTC. By classifying these techniques along several dimensions, we also highlight their similarities and differences. Ultimately, we hope that this paper will provide insights into state-of-art NTC techniques to researchers and system-designers and inspire further research in this field.

97 MATHEMATICS AND COMPUTING↗