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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

New Modulation and Impact of Transformer Leakage Inductance on Current-Source Solid-State Transformer

This article presents a novel modulation scheme for device voltage stress mitigation and comprehensive analysis of the impact of transformer leakage inductance in a current-source solid-state transformer (SST). Different from dual active bridge (DAB) SST, the operation of the current-source SST is similar to that of a flyback converter. The device bridge on only one side of the transformer is active to store energy into or release energy from the magnetizing inductance which acts as a current-source dc link. Such flyback operation with reverse-blocking switches can lead to additional device voltage stress and incomplete zero-voltage switching (ZVS) on the current-source soft-switching solid-state transformer (S4T) under conventional modulation. A new modulation scheme is proposed to address this issue. Moreover, different from the DAB, the leakage inductance of the medium-frequency transformer (MFT) in the S4T is a parasitic element similar to that in a matrix SST and can cause additional device voltage stress. Though the resonant capacitors, originally added to achieve ZVS, can absorb and recycle the leakage energy in the S4T, these capacitors need to be increased with larger leakage inductances to limit the voltage stress. However, large resonant capacitors can result in more lost duty cycles and reduced efficiency. The impact of such leakage inductance on device voltage stress is analyzed comprehensively, which is critical to guide future research and design of the S4T. Experimental results from S4T prototypes for DC-DC, multiport AC-DC, and AC-AC conversion with 1:1 and 4:1 MFT comprehensively verify the proposed concepts. Lastly, a case study of a three-phase AC-AC S4T over a power range from 1 kVA to 100 kVA each module reveals that the MFT leakage inductance should be less than 1% of the magnetizing inductance for safe operation.

14 SOLAR ENERGY↗
DOE OSTI2020

Testing Rod Seal Leakage of a 700 HP Reciprocating Compressor

Methane emissions from reciprocating compressors in the U.S. natural gas industry account for over 72.4 Bcf per year according to a 2006 statement by the United States Environmental Protection Agency. Methane also has a global warming potential 50 times greater than carbon monoxide. Reciprocating compressors are the machinery type with the highest contribution to methane emissions at natural gas transmissions stations. The largest contributing factor comes from the sealing components in the packing components around the piston rod. SwRI, therefore, designed and setup a test loop to perform baseline packing leakage measurements on a four stage 700 HP JGT/4 compressor. The goal was to improve upon current packing leakage models and to compare new seals vs. used seals. The test loop design is described including the limits of operation. The Data Acquisition System (DAQ), including data measurements, is also fully described. The project shows the results of the commissioning process that verified the operation of all the components. Once the loop was commissioned, SwRI performed baseline packing leakage for multiple pressure ratios on each of the four stages of the compressor. The data was collected to develop an analytical model of the packing leakage. Finally, similar testing was performed after replacing the typical rod seal packing with used packing. The used packing leakage was compared to the baseline packing leakage.

03 NATURAL GAS↗
DOE OSTI2022

A compact light shield for the Psyche gamma-ray spectrometer

A compact, low-mass light shield has been designed for the Psyche space mission high-purity germanium gamma-ray spectrometer. The spectrometer will be vented to space, which can allow solar photons to enter the cryostat and cause charge-induced noise. The light shield was designed to block more than 99.9% of solar photons while maintaining high molecular conductance to space vacuum. COMSOL simulations and experiments were performed to characterize light shield photon attenuation and molecular conductance. Finally, the light shield was integrated onto the gamma-ray spectrometer and photon suppression and vacuum performance were demonstrated.

(16) Psyche↗
DOE OSTI2023

Fabrication of Large-Area Metal-on-Carbon Catalytic Condensers for Programmable Catalysis

Catalytic condensers stabilize charge on either side of a high-k dielectric film to modulate the electronic states of a catalytic layer for the electronic control of surface reactions. Here, carbon sputtering provided for fast, large-scale fabrication of metal–carbon catalytic condensers required for industrial application. Carbon films were sputtered on HfO 2 dielectric/p-type Si with different thicknesses (1, 3, 6, and 10 nm), and the enhancement of conductance and capacitance of carbon films was observed upon increasing the carbon thickness following thermal treatment at 400 °C. After Pt deposition on the carbon films, the Pt catalytic condenser exhibited a high capacitance of ∼210 nF/cm 2 that was maintained at a frequency ∼1000 Hz, satisfying the requirement for a dynamic catalyst to implement catalytic resonance. Temperature-programmed desorption of carbon monoxide yielded CO desorption peaks that shifted in temperature with the varying potential applied to the condenser (−6 or +6 V), indicating a shift in the binding energy of carbon monoxide on the Pt condenser surface. A substantial increase in capacitance (∼2000 nF/cm 2 ) of the Pt-on-carbon devices was observed at elevated temperatures of 400 °C that can modulate ∼10% of charge per metal atom when 10 V potential was applied. A large catalytic condenser of 42 cm 2 area Pt/C/HfO 2 /Si exhibited a high capacitance of 9393 nF with a low leakage current/capacitive current ratio (<0.1), demonstrating the practicality and versatility of the facile, large-scale fabrication method for metal–carbon catalytic condensers.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Protonic ceramic materials for clean and sustainable energy: advantages and challenges

In recent years, the hydrogen economy has been strongly favoured by governmental and industrial bodies worldwide. A tremendous number of papers are published every year on different aspects of protonic ceramic electrochemical cells (PCECs) due to their lower operation temperature, easier reversible operation, and brighter prospects for further development. While new progress is being made continuously, many critical challenges remain. The effort on PCEC investigation could be more aligned for greater collective impact, e.g. the academic community could devote more effort to overdue critical problems but less to incremental improvements. This review aims to provide some insightful perspectives on critical challenges facing the development of PCECs, to sort out priorities in future effort, and to suggest promising directions to pursue. In this way, it is hoped that the technical readiness level of PCECs might advance more quickly, toward field demonstrations and commercialization for a clean and sustainable energy era.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Impact of Surface Recombination on Single-Event Charge Collection in an SOI Technology

Semiconductor–insulator interfaces play an important role in the reliability of integrated devices; however, the impact of these interfaces on the physical mechanisms related to single-event effects has not been previously reported. We present experimental data that demonstrate that single-event charge collection can be impacted by changes in interface quality. The experimental data, combined with simulations, show that single-event response may depend on surface recombination at interface defects. The effect depends on strike location and increases with increasing linear energy transfer (LET). Surface recombination can affect single-event charge collection for interfaces with a surface recombination velocity (SRV) of 1000 cm/s and is a dominant charge collection mechanism with SRV >10 5 cm/s.

42 ENGINEERING↗
DOE OSTI2023

A 32-channels readout ASIC for X-ray spectrometry and tracking in the GAPS experiment

Here this work describes the architecture and the experimental results from the characterization of a 32-channels mixed-signal Application-Specific Integrated Circuit (ASIC) developed for the readout of the lithium-drifted silicon, Si(Li), detectors of the General AntiParticle Spectrometer (GAPS) experiment dedicated to searching for dark matter. The instrument is designed for the identification of antiprotons, antideuterons and antihelium nuclei from cosmic rays during an Antarctic balloon mission scheduled for late 2024. A full custom integrated circuit, named SLIDER32 (32-channels Si-LI DEtector Readout) ASIC, has been produced in a commercial 180 nm CMOS technology. The ASIC is comprised of 32 low-noise analog readout channels featuring dynamic signal compression to comply with the wide input range, an 11-bit SAR ADC and a digital back-end section which is responsible for channel setting and for sending digital information to the data acquisition system (DAQ). The circuit design criteria and the experimental results are discussed in the paper.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2023

Ultrawide bandgap vertical β-(Al x Ga1 −x )2O3 Schottky barrier diodes on free-standing β-Ga2O3 substrates

Ultrawide bandgap β-(AlxGa1−x)2O3 vertical Schottky barrier diodes on (010) β-Ga2O3 substrates are demonstrated. The β-(AlxGa1−x)2O3 epilayer has an Al composition of 21% and a nominal Si doping of 2 × 1017 cm−3 grown by molecular beam epitaxy. Pt/Ti/Au has been employed as the top Schottky contact, whereas Ti/Au has been utilized as the bottom Ohmic contact. The fabricated devices show excellent rectification with a high on/off ratio of ∼109, a turn-on voltage of 1.5 V, and an on-resistance of 3.4 mΩ cm2. Temperature-dependent forward current-voltage characteristics show effective Schottky barrier height varied from 0.91 to 1.18 eV while the ideality factor from 1.8 to 1.1 with increasing temperatures, which is ascribed to the inhomogeneity of the metal/semiconductor interface. The Schottky barrier height was considered a Gaussian distribution of potential, where the extracted mean barrier height and a standard deviation at zero bias were 1.81 and 0.18 eV, respectively. A comprehensive analysis of the device leakage was performed to identify possible leakage mechanisms by studying temperature-dependent reverse current-voltage characteristics. At reverse bias, due to the large Schottky barrier height, the contributions from thermionic emission and thermionic field emission are negligible. By fitting reverse leakage currents at different temperatures, it was identified that Poole–Frenkel emission and trap-assisted tunneling are the main leakage mechanisms at high- and low-temperature regimes, respectively. Electrons can tunnel through the Schottky barrier assisted by traps at low temperatures, while they can escape these traps at high temperatures and be transported under high electric fields. This work can serve as an important reference for the future development of ultrawide bandgap β-(AlxGa1−x)2O3 power electronics, RF electronics, and ultraviolet photonics.

Materials Science↗
DOE OSTI2022

An APEC-covered 2-D NEM macroscopic depletion analysis of partial MOX SMRs

A proper leakage correction is mandatory for a depletion analysis based on the conventional two-step method to take into account neighborhood effect. This study aims to apply the albedo-corrected parameterized equivalence constant (APEC) method to a macroscopic depletion in 2-D NEM analysis and assess the performance of introduced 1x1 and 2x2 APEC leakage corrections. The main idea of the APEC leakage correction is to correct homogenized group constants (HGCs) by predetermined APEC functions as a function of a normalized leakage parameter, current-to-flux ratio (CFR). Predetermined APEC functions consist of APEC cross-section (XS) and discontinuity factor (DF), and various color-set burnup calculations are conducted to generate burnup-dependent APEC functions. In this work, partial MOX SMR and variant cores are introduced to evaluate the applicability of the APEC leakage correction even in partially MOX-loaded SMRs, which are difficult to be analyzed by the conventional two-step method. Results show that the burnup-dependent 2x2 APEC leakage correction can improve the nodal equivalence in partial MOX SMRs. The burnup-dependent 2x2 APEC leakage correction is recommended to overcome the inherent limitation of the macroscopic depletion analysis with the conventional two-step method. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2021

Impact of the Transformer Magnetizing Inductance on the Performance of the Dual-Active Bridge Converter

The magnetizing inductance of the high-frequency transformer in the dual-active bridge (DAB) converter is usually assumed to be much larger than its leakage inductance, thereby the magnetizing current can be negligible. However, ignoring the magnetizing current will lead to an error in the DAB converter design process. This paper analyzes the operation and performance of the DAB converter for a general case in which the transformer magnetizing inductance is taken into consideration. The analysis shows that the magnetizing inductance impacts the soft-switching region, the power transfer capability, and the leakage inductor current. A simulation case study is provided to verify the analysis. A DAB converter prototype is built to experimentally validate the analysis as well.

Yin, Shiyuan↗
DOE OSTI2024

Superionic fluoride gate dielectrics with low diffusion barrier for two-dimensional electronics

Exploration of new dielectrics with a large capacitive coupling is an essential topic in modern electronics when conventional dielectrics suffer from the leakage issue near the breakdown limit. Here, to address this looming challenge, we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm -2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with scalable device manufacturing processes. Such a static dielectric capability of superionic fluorides is exemplified by MoS 2 transistors exhibiting high on/off current ratios over 10 8 , ultralow subthreshold swing of 65 mV dec -1 and ultralow leakage current density of ~10 -6 A cm -2 . Therefore, the fluoride-gated logic inverters can achieve notably higher static voltage gain values (surpassing ~167) compared with a conventional dielectric. Furthermore, the application of fluoride gating enables the demonstration of NAND, NOR, AND and OR logic circuits with low static energy consumption. In particular, the superconductor–insulator transition at the clean-limit Bi 2 Sr 2 CaCu 2 O 8+δ can also be realized through fluoride gating. In conclusion, our findings highlight fluoride dielectrics as a pioneering platform for advanced electronic applications and for tailoring emergent electronic states in condensed matter.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Vertical Septum Magnet Design for the APS Upgrade

The vertical injection scheme proposed for the APS Upgrade (APS-U) Project requires a challenging septum magnet that must meet stringent beam physics, magnetic field leakage, and vacuum requirements. The current iteration of this magnet design includes an enlarged stored-beam chamber aperture of 9 mm x 12 mm and a reduction of the septum thickness to 1.5 mm. The enlarged aperture accommodates a non-evaporable getter (NEG)-coated stored beam chamber to better achieve the required vacuum. A prototype septum magnet has been built and measurements confirm the cancellation of a peak leakage field even though the value is six times larger than the design. The leakage field measured at the upstream (US) end cancels the downstream (DS) end as was expected by design. The measured and simulated leakage field and the stored beam trajectories are reported.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Online Calculator to Evaluate the Impact of Airtightness on Residential Building Energy Consumption and Moisture Transfer

Energy consumption in residential buildings is primarily driven by space conditioning applications. Space heating and cooling, on average, consume approximately 50% of the energy in the residential buildings in the U.S. The primary energy use due to infiltration is more than 2.8 Quads, which is 29% of primary energy consumption attributable to fenestration and building envelope components in residential buildings in US in 2010. There are advanced air barrier technologies and construction practices to reduce air leakage in buildings, which are currently available in the market. However, the lack of adequate information on their impact on energy consumption and the durability of buildings has caused the slow adoption of these technologies and methods. In the past, the authors developed an online calculator that estimates the potential energy and cost savings in major U.S., Canadian and Chinese cities from improvement in airtightness in commercial buildings. In 2018–2019, the calculator was expanded to add moisture transfer calculations, given that air leakage through the building envelope can have a significant impact on moisture transfer. The calculator is again being expanded by adding residential and additional commercial building data. In this paper, we present the impact of airtightness in residential buildings on energy consumption and moisture transfer. The study includes the analysis of airtightness in 52 major cities in the U.S. and five cities in Canada on a residential building that includes a crawlspace and has a gas furnace.

Kunwar, Niraj↗
DOE OSTI2023

Evaluation of the first version of the new RFPI system dedicated to PIP-II project accelerator

The Low-Level Radio Frequency (LLRF) control system is one of the most critical superconducting linac infrastructures responsible for the parameters of the beam acceleration. The LLRF system mainly focuses on the electromagnetic field parameters inside the cavity. While it incorporates fast feedback algorithms to optimize energy transfer to the passing particle beam it does not follow other cryomodule or cavity parameter changes. The Radio Frequency Protection Interlock (RFPI) system closely monitors various factors (like cryomodule vacuum, beamline vacuum, field emission probe current level, temperature, RF signal leakage, etc). Its simple but reliable logic has to provide an instant decision about the LLRF system or high-power amplifier output signal blocking in case of safety region excitation. This contribution presents a new version of the RFPI system which logic is implemented in the FPGA chip. The initial work on the prototype of the new system design resulted in the PoC (Proof of Concept) device. The PoC offers the possibility of various protection logic configurations, input signals parameters evaluation, and modularity aspects verification. The structure and test results from the device evaluation are summarized and discussed in this contribution.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Ionic transport in electrostatic Janus Membranes. An explicit solvent molecular dynamic simulation.

Janus –or two-sided, charged membranes offer promise as ionic current rectifiers. In such systems, pores consisting of two regions of opposite charge can be used to generate a current from a gradient in salinity. The efficiency of nanoscale Janus pores increases dramatically as their diameter becomes smaller. However, little is known about the underlying transport processes, particularly under experimentally accessible conditions. In this work, we examine the molecular basis for rectification in Janus nanopores using an applied electric field. Molecular simulations with explicit water and ions are used to examine the structure and dynamics of all molecular species in aqueous electrolyte solutions. For several macroscopic observables, the results of such simulations are consistent with experimental observations on asymmetric membranes. Our analysis reveals a number of previously unknown features, including a pronounced local re-orientation of water molecules in the pores, and a segregation of ionic species that has not been anticipated by previously reported continuum analyses of Janus pores. Using these insights, a model is proposed for ionic current rectification in which electric leakage at pore entrance controls net transport.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗