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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS2009

Extended Life PZT Stack Test Fixture

Piezoelectric stacks are being sought to be used as actuators for precision positioning and deployment of mechanisms in future planetary missions. Beside the requirement for very high operation reliability, these actuators are required for operation at space environments that are considered harsh compared to normal terrestrial conditions.These environmental conditions include low and high temperatures and vacuum or high pressure. Additionally, the stacks are subjected to high stress and in some applications need to operate with a very long lifetime durability.Many of these requirements are beyond the current industry design margins for nominal terrestrial applications. In order to investigate some of the properties that will indicate the durability of such actuators and their limitations we have developed a new type of test fixture that can be easily integrated in various test chambers for simulating environmental conditions, can provide access for multiple measurements while being exposed to adjustable stress levels. We designed and built two test fixtures and these fixtures were made to be adjustable for testing stacks with different dimensions and can be easily used in small or large numbers. The properties that were measured using these fixtures include impedance, capacitance, dielectric loss factor, leakage current, displacement, breakdown voltage, and lifetime performance. The fixtures characteristics and the test capabilities are presented in this paper.

test fixtures↗
DOE OSTI2024

Demonstrating the β-Ga 2 O 3 Schottky diodes for alpha radiation detection

Schottky barrier diodes were fabricated on (001) monoclinic β-Ga 2 O 3 wafers with low doped epitaxial layers of 7.0 × 10 15 cm −3 . Circular Ni Schottky contacts with area 2 mm 2 were deposited by electron beam evaporation. Devices were characterized electrically by performing forward and reverse current-voltage sweeps with a range of −100 V–2 V, as well as capacitance-voltage sweeps to −30 V. The breakdown voltage was also determined to be −180 V for the devices. Experiments measuring the electrical response from incident X-ray radiation was performed. A response time to X-ray radiation of less than 1 s was recorded and a decay time of approximately 2 s after removing X-ray source, which primarily attribute to X-ray switching on and off time. Energy spectra of alpha particles from a 0.9 μCi 241 Am button source was collected at various voltage biases using devices with the lowest measured leakage current while reverse biased. The total count rate was observed to increase linearly with increasing device bias. In conclusion, the peak channel number was observed to increase with increasing bias with the best resolution of 9.5% at −100 V reverse bias.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2004

Silicon Carbide Diodes Characterization at High Temperature and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers rated at 200, 300, 600, and 1200 V, were electrically tested and characterized as a function of temperature up to 300 C. Electrical tests included both steady state and dynamic tests. Steady state tests produced forward and reverse I-V characteristic curves. Transient tests evaluated the switching performance of the diodes in either a hard-switched DC to DC buck converter or a half-bridge boost converter. For evaluation and comparison purposes, the same tests were performed with current state-of-the-art ultra fast silicon (Si) pn-junction diodes of similar ratings and also a Si Schottky diode. The comparisons made were forward voltage drop at rated current, reverse current at rated voltage, and turn-off peak reverse recovery current and reverse recovery time. In addition, efficiency measurements were taken for the buck DC to DC converter using both the SiC Schottky diodes and the Si pn-junction diodes at different temperatures and frequencies. The test results showed that at high temperature, the forward voltage drop for SiC Schottky diodes is higher than the forward drop of the ultra fast Si pn-junction diodes. As the temperature increased, the forward voltage drop of the SiC Schottky increased while for the ultra fast Si pn-junction diodes, the forward voltage drop decreased as temperature increased. For the elevated temperature steady state reverse voltage tests, the SiC Schottky diodes showed low leakage current at their rated voltage. Likewise, for the transient tests, the SiC Schottky diodes displayed low reverse recovery currents over the range of temperatures tested. Conversely, the Si pn-junction diodes showed increasing peak reverse current values and reverse recovery times with increasing temperature. Efficiency measurements in the DC to DC buck converter showed the advantage of the SiC Schottky diodes over the ultra fast Si pn-junction diodes, especially at the higher temperatures and higher frequencies.

Lebron-Velilla, Ramon C.↗
DOE OSTI2023

Ultra-thin on-chip ALD LiPON capacitors for high frequency application

Multi-layer ceramic capacitors have been used for high frequency decoupling application due to a lower overall impedance leading to fast current response. However, high parasitic inductance limits the application of these capacitors in ultra-high frequency domain. Thus, Multlayer Ceramic Capacitors (MLCCs) are placed close to the IC to improve circuit efficiency and reduce inductance. With next generation applications, the demand for frequency range has further increased which not only requires enhanced capacitor material but improved manufacturing techniques to limit the inductive path. Here, we demonstrate ALD of two different polymorphs of ultra-thin film lithium phosphorus oxynitride (LiPON) as an inorganic solid state electrolyte (SSE) for on chip capacitors for decoupling application. Both the LiPON capacitors shows an electric double layer behavior with a capacitance of 15 μF/cm 2 and a low leakage current (<20 nA/cm 2 ) at 2V. The LiPON shows EDLC behavior up to 10 kHz and beyond, both the polymorphs show an electrostatic behavior with a high dielectric constant (14). Furthermore, this dual frequency behavior along with low parasitic inductance and on chip integration allows for operation in extended frequency ranges.

25 ENERGY STORAGE↗
NASA NTRS1998

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (less than 250 V) 4H-SiC p(+)n Junction diodes: DC Properties - Part 1

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = 1c with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4)/sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
DOE OSTI2020

Achieving Flat-on Primary Crystals by Nanoconfined Crystallization in High-Temperature Polycarbonate/Poly(vinylidene fluoride) Multilayer Films and Its Effect on Dielectric Insulation

To meet the stringent requirements of next-generation film capacitors for power electronics, multilayer films (MLFs) are fabricated with the advantage of achieving high temperature rating, high energy density, and reasonably low loss simultaneously. In this study, a high permittivity polar polymer, poly(vinylidene fluoride) (PVDF), is multilayered with a linear, low loss dielectric polymer such as high-temperature polycarbonate (HTPC). However, the dielectric loss of these MLFs was still high as compared with current state-of-the-art biaxially oriented polypropylene (BOPP) films. The goal of this work is to decrease the dielectric loss and enhance dielectric insulation by achieving flat-on primary PVDF crystals in MLFs via nanoconfined melt-recrystallization. Based on simultaneous small- and wide-angle X-ray scattering experiments, edge-on lamellar crystals were observed for all as-extruded MLFs, regardless of different PVDF layer thicknesses. However, after melting at 180 °C followed by recrystallization, flat-on primary crystals were successfully achieved when the PVDF layer thickness was below 39 nm. Above 78 nm for the PVDF layer, major edge-on primary crystals with minor flat-on secondary crystals were observed. Furthermore, from leakage current, breakdown, lifetime, and electric displacement-electric field loop studies, MLFs with the flat-on primary crystals exhibited reduced loss and enhanced dielectric insulation as compared to as-extruded MLFs and those with edge-on primary/flat-on secondary crystals. This was attributed to the effective blockage of charge carriers by the flat-on PVDF primary crystals and their reduced ferroelectric switching.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Ionic‐Liquid Free and Flexible Transistors Made of 2D Material Inks

The development of thin-film transistors (TFTs) using 2D materials is crucial for enabling scalable, low-cost, and flexible electronics. Currently, 2D TFTs with the highest performance have been achieved by using ionic-liquid gating (ILG), a technique suited for proof-of-concept studies. However, ILG suffers from slow switching speeds, temperature sensitivity, poor long-term stability, and integration challenges, making it unsuitable for practical use. Moreover, typical fabrication methods for 2D TFTs involve harsh conditions such as strong acids or high temperatures (>300 °C), limiting integration with flexible substrates. This work provides the first demonstration of an ILG-free, all-2D-material TFT fabricated onto a flexible substrate. Water-based graphene and hexagonal boron nitride (h-BN) inks are printed to deposit the electrodes and dielectric layers, respectively. The MoS 2 channel is produced via supramolecular interfacial self-assembly, yielding uniform, monolayer-rich films transferable to rigid and flexible substrates. The resulting TFTs operate below 3 V, exhibit negligible leakage current, and achieve field-effect mobilities up to 0.46 cm 2 V −1 s −1 (rising to 2.47 cm 2 V −1 s −1 with silver electrodes) measured under ambient conditions, while maintaining excellent mechanical flexibility. This work establishes a low-cost and scalable solution-processable platform for flexible electronics based on 2D materials that match requirements for practical applications.

2D materials↗
NASA NTRS1995

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.↗
NASA NTRS1996

Hydrogen passivation of N(+)-P and P(+)-N heteroepitaxial InP solar cell structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n-p and p-n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)-p and p(+)-n heteroepitaxial InP cell structures from as-grown values of 5-7 x 10(exp 14) cm(exp -3), down to 3-5 x 10(exp 12) cm(exp -3). All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. One to five analysis indicated a subsequent approximately 100 fold decrease in reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)-n structures. In addition to being passivated, dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, Basab↗
NASA NTRS1995

Hydrogen passivation of n+p and p+n heteroepitaxial InP solar cell structures

High-efficiency, heteroepitaxial (HE) InP solar cells, grown on GaAs, Si or Ge substrates, are desirable for their mechanically strong, light-weight and radiation-hard properties. However, dislocations, caused by lattice mismatch, currently limit the performance of the HE cells. This occurs through shunting paths across the active photovoltaic junction and by the formation of deep levels. In previous work we have demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of dislocations in specially designed HE InP test structures. In this work, we present the first report of successful hydrogen passivation in actual InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in HE n+n InP cell structures from as-grown values of approximately 10(exp 15)/cm(exp -3), down to 1-2 x 10(exp 13)/cm(exp -3). The deep levels in the p-type base region of the cell structure match those of our earlier p-type test structures, which were attributed to dislocations or related point defect complexes. All dopants were successfully reactivated by a 400 C, 5 minute anneal with no detectable activation of deep levels. I-V analysis indicated a subsequent approximately 10 fold decrease in reverse leakage current at -1 volt reverse bias, and no change in the forward biased series resistance of the cell structure which indicates complete reactivation of the n+ emitter. Furthermore, electrochemical C-V profiling indicates greatly enhanced passivation depth, and hence hydrogen diffusion, for heteroepitaxial structures when compared with identically processed homoepitaxial n+p InP structures. An analysis of hydrogen diffusion in dislocated InP will be discussed, along with comparisons of passivation effectiveness for n+p versus p+n heteroepitaxial cell configurations. Preliminary hydrogen-passivated HE InP cell results will also be presented.

Chatterjee, B.↗
DOE OSTI2023

Mitigating Electronic Conduction in Ceria‐Based Electrolytes via External Structure Design

Doped ceria electrolytes are the state of the art low‐temperature solid oxide electrolytes because of their high ionic conductivity and good material compatibility. However, cerium tends to reduce once exposed to reducing environments, leading to an increase in electronic conduction and a decrease in efficiency. Here, the leakage current is mitigated in ceria‐based electrolytes by controlling the defect chemistry through an engineered cathode side microstructure. This functional layer effectively addresses the problematic electronic conduction issue in ceria‐based electrolytes without adding significant ohmic resistance and increases the ionic transference number to over 0.93 in a thin 20 µm ceria‐based electrolyte at 500 °C, compared to a of 0.8 for an unmodified one. Based on this design, solid oxide fuel cells (SOFCs) are further demonstrated with the remarkable peak power density of 550 mW at 500 °C and excellent stability for over 2000 h. This approach enables a potential breakthrough in the development of ceria‐based low‐temperature solid oxide electrolytes.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Interfacial Engineering Using Covalent Organic Frameworks in Polymer Composites for High‐Temperature Electrostatic Energy Storage

Abstract The use of inorganic nanofillers has been an effective method to improve high‐temperature capacitive performance of dielectric polymers, though there are unmet challenges such as undesirable organic–inorganic compatibility, and low efficiencies and energy densities. Herein, a surface functionalization strategy using covalent organic frameworks (COFs) is employed to address such challenges in realizing high‐performing polymer composites. Specifically, core–shell structured nanoparticles, where ZrO 2 nanoparticles act as the core and a COF material forms the shell, are constructed and composited with the polyetherimide (PEI) matrix. The design leverages the high electron affinity ( E A ) of the outer COF shell to create energy traps, thereby capturing free charges and limiting electrical conduction. Concurrently, the low E A and wide bandgap of the ZrO 2 core introduce energy barriers to impede charge injection and migration. This orchestrated “energy level cascade” results in a marked reduction of leakage current and energy loss. The resulting polymer composite showcases an impressive discharged energy density of 6.21 J cm −3 at an efficiency above 90%, with a maximum discharged energy density reaching 7.43 J cm −3 at 150 °C. These performance metrics position the PEI/ZrO 2 @COF polymer composite to surpass or be on par with state‐of‐the‐art high‐temperature PEI composites and other advanced polymer dielectrics.

Xie, Zongliang↗
DOE OSTI2021

Highly Efficient Pure‐Blue Light‐Emitting Diodes Based on Rubidium and Chlorine Alloyed Metal Halide Perovskite

Abstract Perovskite light‐emitting diodes (PeLEDs) are promising candidates for display and solid‐state lighting, due to their tunable colors, high conversion efficiencies, and low cost. However, the performance of blue PeLEDs is far inferior to that of the near‐infrared, red, and green counterparts. Here, the fabrication of pure‐blue PeLEDs with an emission peak at 475 nm, a peak external quantum efficiency of 10.1%, and a maximum luminance of 14 000 cd m −2 is demonstrated by tailoring the compositions of perovskites. The pure‐blue electroluminescence is achieved by simultaneous addition of rubidium and chlorine ions into CsPbBr 3 and incorporation of phenylethylammonium chloride forms quasi‐2D hybrid perovskites. The combination of these composition engineering results in blueshifted emissions without reducing the quantum yield. The judicious alloying is shown to be critical to result in the better morphology with suppressed current leakage and enhanced light outcoupling.

Yang, Yang↗
DOE OSTI2024

Multilaminate Energy Storage Films from Entropy‐Driven Self‐Assembled Supramolecular Nanocomposites

Abstract Composite materials comprising polymers and inorganic nanoparticles (NPs) are promising for energy storage applications, though challenges in controlling NP dispersion often result in performance bottlenecks. Realizing nanocomposites with controlled NP locations and distributions within polymer microdomains is highly desirable for improving energy storage capabilities but is a persistent challenge, impeding the in‐depth understanding of the structure–performance relationship. In this study, a facile entropy‐driven self‐assembly approach is employed to fabricate block copolymer‐based supramolecular nanocomposite films with highly ordered lamellar structures, which are then used in electrostatic film capacitors. The oriented interfacial barriers and well‐distributed inorganic NPs within the self‐assembled multilaminate nanocomposites effectively suppress leakage current and mitigate the risk of breakdown, showing superior dielectric strength compared to their disordered counterparts. Consequently, the lamellar nanocomposite films with optimized composition exhibit high energy efficiency (>90% at 650 MV m −1 ), along with remarkable energy density and power density. Moreover, finite element simulations and statistical modeling have provided theoretical insights into the impact of the lamellar structure on electrical conduction, electric field distribution, and electrical tree propagation. This work marks a significant advancement in the design of organic–inorganic hybrids for energy storage, establishing a well‐defined correlation between microstructure and performance.

Li, He↗
DOE OSTI2023

Thermal Stability of Schottky Contacts and Rearrangement of Defects in β ‐Ga 2 O 3 Crystals

Abstract The thermal stability of different Schottky contacts (Au, Pt, and Ni) on (100) β ‐Ga 2 O 3 single crystals grown by the Czochralski method is investigated. Besides the examination of the Schottky barrier parameters, contact‐dependent defect levels are investigated by deep‐level transient spectroscopy (DLTS) in a 100–650 K (ramp‐up) and 650–100 K (ramp‐down) temperature cycle. Several defect levels are detected below the conduction band minimum at 0.41, 0.60, 0.77, 0.96, and 1.17 eV. In the temperature ramp‐down DLTS, the 1.17 eV level disappears, and the 0.60 eV level appears for all Schottky contacts. DFT calculations suggest that rearrangement and dissociation of a single hydrogen from a doubly‐hydrogenated Ga─O divacancy complex occurs during the temperature sweep under bias. The trap level at 0.96 eV only appears after the thermal load for the Ni contact, in contrast to Au and Pt, where it is present without a thermal budget. Temperature‐dependent leakage current (at −4 V) measurements indicate oxidation of Ni, and further thermodynamic analysis suggests alloying of Au‐Ga atoms at the Au/ β ‐Ga 2 O 3 interface. These studies provide insight into the behavior induced by these common Schottky contacts and the alteration associated with temperature cycling.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light

A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto a bolaamphiphilic axle was incorporated into droplet interface bilayers (DIBs). The azobenzene groups on the ring underwent quasi-reversible, photoisomerization-induced cycling between 1-E and 1-Z configurations when irradiated with 370 and 467 nm light, respectively, enabling programmable access to different history-dependent electrical behaviors from the same membrane. In the 1-E configuration, bilayers exhibited type-IIactive memristance that coincided with increasingly elevated ionic conduction, associated with progressively enhanced bilayer permeability during voltage cycling. In the 1-Z configuration, bilayers displayed type-I, passive memcapacitive behavior, reflecting tighter lipid packing and reduced ionic permeability. Photoswitching also yielded a nonvolatile, photoresponsive memcapacitor that could be modulated repetitively with negligible loss, likely via reversible changes in membrane thickness. Concurrent ohmic leakage currents across the membrane were less than 0.3%. These results agree with previous studies with increasing membrane permeability using photoswitchable rotaxanes and provide new insights into the coupling between volatile and nonvolatile memcapacitance during photoisomerization. More broadly, they demonstrate a new strategy for the manipulation of neuromorphic behaviors in soft materials using light, with implications for brain-inspired computation and sensing.

droplet interface bilayers↗
DOE OSTI2022

Evaluation of bifacial module technologies with combined–accelerated stress testing

In view of the increasing interest and market share of bifacial cells and modules, suitable substrates such as glass and transparent backsheets along with ethylene vinyl acetate (EVA) and polyolefin elastomer (POE) encapsulants were examined in combined-accelerated stress testing (C-AST) to evaluate and compare degradation modes. Testing with both monofacial and bifacial cells, we found glass-glass modules with monofacial cells led to greater grid finger breakage than those with polymeric backsheets. Furthermore, this is attributed to previous X-ray topography and modeling work showing higher stress in cells and interconnections in glass-glass modules than glass-backsheet modules. Consistent with the objectives of C-AST, which stresses modules at levels corresponding to the limits seen in the natural environment, we observed the UV-fluorescence signatures of modules tested in C-AST (considering the degradation associated with developing chromophores, moisture penetration and photobleaching effects) to be like those in fielded modules, more so than other chamber stress testing implemented for comparison. We found light-induced degradation (LID) in module types with regenerated (inactive) cells with C-AST, suggesting the possibility of LID destabilization in some field conditions. We could also distinguish potential-induced degradation (PID) on the back of the bifacial passivated emitter and rear cells (PERC) in C-AST. Confirming with ex-situ tests, we found polarization-type PID most prevalent in glass-glass modules with EVA as would be anticipated considering the greater leakage current through such module encapsulation. Unlike PID tests performed in the dark, which can lead to false positive PID test results, field-representative illumination is experienced by the modules on the front and back side while –1200 V system voltage is applied in C-AST, supporting the conclusion that this module type with glass-glass construction would be susceptible to PID in the field.

14 SOLAR ENERGY↗