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At least 199 records · Page 11

Epitaxial solar cells fabrication

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

Daiello, R. V.↗

Ion-implanted epitaxially grown ZnSe

The use of ZnSe to obtain efficient, short wavelength injection luminescence was investigated. It was proposed that shorter wavelength emission and higher efficiency be achieved by employing a p-i-n diode structure rather than the normal p-n diode structure. The intervening i layer minimizes concentration quenching effects and the donor-acceptor pair states leading to long wavelength emission. The surface p layer was formed by ion implantation; implantation of the i layer rather than the n substrate permits higher, uncompensated p-type doping. An ion implanted p-n junction in ZnSe is efficiency-limited by high electron injection terminating in nonradiative recombination at the front surface, and by low hole injection resulting from the inability to obtain high conductivity p-type surface layers. While the injection ratio in p-n junctions was determined by the radio of majority carrier concentrations, the injection ratio in p-i-n structures was determined by the mobility ratios and/or space charge neutrality requirements in the i layer.

Chernow, F.↗

Improved performance design of gallium arsenide solar cells for space

An improved design, shallow junction heteroface, n-p, gallium arsenide solar cell for space applications is reported, with a predicted AM0 efficiency in the 21.9 to 23.0 percent range. The optimized n-p structure, while slightly more efficient, has the added advantage of being less susceptible to radiation-induced degradation by virtue of this thin top junction layer. Detailed spectral response curves and an analysis of the loss mechanisms are reported. The details of the design are readily measurable. The optimized designs were reached by quantifying the dominant loss mechanisms and then minimizing them by using computer simulations.

Parekh, R. H.↗

Computation of steady axisymmetric flow using a one-dimensional time-dependent method

An iterative numerical method for computing steady, three dimensional, viscous, compressible flow fields, about aerodynamic bodies was studied. In order to develop the iterative method economically, the primary emphasis was directed towards supersonic, axisymmetric flow. However, the technique readily extends to three spatial dimensions. The viscous flow field about a cone-cylinder-flare body was calculated and compared to existing experimental data. Numerical predictions of the cone boundary layer and the flow field shock wave structure agreed with corresponding measurements. A separation was calculated at the cylinder-flare junction in six iterations; however, the size of the vortex did not correspond to the measured size. It was estimated that fifty iterations would be required to properly define the vortex. It was concluded that the iteration technique is of limited value for plane two dimensional and axisymmetrix flows, but of great value for three-dimensional flows.

Walitt, L.↗

On the cause of the flat spot phenomenon observed in silicon solar cells at low temperatures and low intensities

The results of an effort to determine the mechanisms involved in the flat spot (FS) effect are given. It is suggested that the FS effect is due to a resistive metal-semiconductor-like (MSL) interface in parallel with the cell PN junction. Regions responsible for the FS effect lie under the front surface metallization in these cells, where the PN junction has been destroyed and replaced with a metal silicide-semiconductor interface. Such structural changes, which appear to be due to the thermally activated dissolution of the silicon, have been induced in cells as a result of isochronal heat treatments at temperatures between 450 C and 560 C. It has been found that a 650 A layer of Ta2O5 evaporated over the metallization is sufficient to prevent the underlying silicon from pitting during the subsequent heat treatment, although pitting at the metal silicon ambient interface could still be observed.

Weizer, V. G.↗

III-V Compound Detectors for CO2 DIAL Measurements

Profiling of atmospheric carbon dioxide (CO2) is important for understanding the natural carbon cycle on Earth and its influence on global warming and climate change. Differential absorption lidar is a powerful remote sensing technique used for profiling and monitoring atmospheric constituents. Recently there has been an interest to apply this technique, at the 2 m wavelength, for investigating atmospheric CO2. This drives the need for high quality detectors at this wavelength. Although 2 m detectors are commercially available, the quest for a better detector is still on. The detector performance, regarding quantum efficiency, gain and associated noise, affects the DIAL signal-to-noise ratio and background signal, thereby influencing the instrument sensitivity and dynamic range. Detectors based on the III-V based compound materials shows a strong potential for such application. In this paper the detector requirements for a long range CO2 DIAL profiles will be discussed. These requirements were compared to newly developed III-V compound infrared detectors. The performance of ternary InGaSb pn junction devices will be presented using different substrates, as well as quaternary InGaAsSb npn structure. The performance study was based on experimental characterization of the devices dark current, spectral response, gain and noise. The final results are compared to the current state-of-the-art InGaAs technology. Npn phototransistor structure showed the best performance, regarding the internal gain and therefore the device signal-to-noise ratio. 2-micrometers detectivity as high as 3.9 x 10(exp 11) cmHz(sup 1/2)/W was obtained at a temperature of -20 C and 4 V bias voltage. This corresponds to a responsivity of 2650 A/W with about 60% quantum efficiency.

Refaat, Tamer F.↗

Recovery of Electron/Proton Radiation-Induced Defects in n+p AlInGaP Solar Cell by Minority-Carrier Injection Annealing

A high efficient In0.48Ga0.52P/In0.01Ga0.99As/Ge triple junction solar cell has been developed for application in space and terrestrial concentrator PV system [1-3]. Recently, a high conversion efficiency of 31.5% (AM1.5G) has been obtained in InGaP/(In)GaAs/Ge triple junction solar cell, and as a new top cell material of triple junction cells, (Al)InGaP [1] has been proposed to improve the open-circuit voltage (Voc) because it shows a higher Voc of 1.5V while maintaining the same short-circuit current (ISC) as a conventional InGaP top cell under AM1.5G conditions as seen in figure 1 (a). Moreover, the spectral response of 1.96eV AlInGaP cell with a thickness of 2.5..m shows a higher response in the long wavelength region, compared with that of 1.87eV InGaP cell with 0.6..m thickness, as shown in figure 1 (b). Its development will realize next generation multijunction (MJ) solar cells such as a lattice mismatched AlInGaP/InGaAs/Ge 3-junction and lattice matched AlInGaP/GaAs/InGaAsN/Ge 4-junction solar cells. Figure 2 shows the super high-efficiency MJ solar cell structures and wide band spectral response by MJ solar cells under AM1.5G conditions. For realizing high efficient MJ space solar cells, the higher radiation-resistance under the electron or proton irradiation is required. The irradiation studies for a conventional top cell InGaP have been widely done [4-6], but little irradiation work has been performed on AlInGaP solar cells. Recently, we made the first reports of 1 MeV electron or 30 keV proton irradiation effects on AlInGaP solar cells, and evaluated the defects generated by the irradiation [7,8]. The present study describes the recovery of 1 MeV electron / 30 keV proton irradiation-induced defects in n+p- AlInGaP solar cells by minority-carrier injection enhanced annealing or isochronal annealing. The origins of irradiation-induced defects observed by deep level transient spectroscopy (DLTS) measurements are discussed.

Lee, H. S.↗

Relating a Jet-Surface Interaction Experiment to a Commercial Supersonic Transport Aircraft Using Numerical Simulations

Reynolds-Averaged Navier-Stokes (RANS) simulations were performed for a commercial supersonic transport aircraft concept and experimental hardware models designed to represent the installed propulsion system of the conceptual aircraft in an upcoming test campaign. The purpose of the experiment is to determine the effects of jet-surface interactions from supersonic aircraft on airport community noise. RANS simulations of the commercial supersonic transport aircraft concept were performed to relate the representative experimental hardware to the actual aircraft. RANS screening simulations were performed on the proposed test hardware to verify that it would be free from potential rig noise and to predict the aerodynamic forces on the model hardware to assist with structural design. The simulations showed a large region of separated flow formed in a junction region of one of the experimental configurations. This was dissimilar with simulations of the aircraft and could invalidate the noise measurements. This configuration was modified and a subsequent RANS simulation showed that the size of the flow separation was greatly reduced. The aerodynamic forces found on the experimental models were found to be relatively small when compared to the expected loads from the model’s own weight.Reynolds-Averaged Navier-Stokes (RANS) simulations were completed for two configurations of a three-stream inverted velocity profile (IVP) nozzle and a baseline single-stream round nozzle (mixed-flow equivalent conditions). For the Sideline and Cutback flow conditions, while the IVP nozzles did not reduce the peak turbulent kinetic energy on the lower side of the jet plume, the IVP nozzles did significantly reduce the size of the region of peak turbulent kinetic energy when compared to the jet plume of the baseline nozzle cases. The IVP nozzle at Sideline conditions did suffer a region of separated flow from the inner stream nozzle splitter that did produce an intense, but small, region of turbulent kinetic energy in the vicinity of the nozzle exit. When viewed with the understanding that jet noise is directly related to turbulent kinetic energy, these IVP nozzle simulations show the potential to reduce noise to observers located below the nozzle. However, these RANS simulations also show that some modifications may be needed to prevent the small region of separated flow-induced turbulent kinetic energy from the inner stream nozzle splitter at Sideline conditions.

Reynolds-Averaged Navier Stokes↗

Thermoradiative Conversion for Space Power Systems

The thermoradiative cell is a new method for converting heat energy to electrical power, first detailed by Strandberg in 2015. The cell is structurally similar to a photovoltaic cell, in that it is a p-n junction semiconductor device, but thermodynamically operates in the reverse direction, converting the thermal dark current into electrical power by utilizing the recombination radiation from thermally-generated electron hole pairs to radiate waste heat to space. This technology may have application for space missions in converting thermal energy produced by a radioisotope source or from a nuclear reactor into power. The power and efficiency can be calculated as a function of bandgap in the detailed-balance case (the Shockley-Queisser limit), in which all of the thermal emissivity of the cell is due to the recombination of thermally generated electron-hole pairs, and all other recombination losses are ignored. The current produced is directly proportional to the recombination radiation, and thus the more thermally generated pairs, the higher the current. The voltage is proportional to the external bias. These two constraints allow optimization of the optimum bias point for maximum power, and allow calculation of the efficiency at maximum power point. Unlike photovoltaic cells, the maximum power operating point is not the same as the maximum efficiency point, and higher efficiency can be achieved at a higher (negative) bias in the ideal case. Incorporating non-ideal losses, however, shifts the maximum efficiency point toward lower bias. Since a thermoradiative cell operates by radiating directly to space, the current produced by a themoradiative cells will increase with the Stefan-Boltzman radiative efficiency; roughly the fourth power of the temperature. Thus, in contrast to a photovoltaic converter, the power produced is highest at high operating temperatures. Likewise, in contrast to conventional thermal conversion, high radiator temperature increases, rather than decreases the efficiency. Thus, the thermoradiative conversion may fill a mission niche in which small radiator size is required. The basic operation will be summarized, applications to space power discussed, and the requirements for further research outlined.

Photovoltaic Cell↗

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗

n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

Wilt, David M.↗

Effects of microgravity on liposome-reconstituted cardiac gap junction channeling activity

Effects of microgravity on cardiac gap junction channeling activity were investigated aboard NASA zero-gravity aircraft. Liposome-reconstituted gap junctions were assayed for channel function during free-fall, and the data were compared with channeling at 1 g. Control experiments tested for 0 g effects on the structural stability of liposomes, and on the enzyme-substrate signalling system of the assay. The results demonstrate that short periods of microgravity do not perturb reconstituted cardiac gap junction channeling activity.

Heart/physiology↗

SpaRibs Geometry Parameterization for Wings with Multiple Sections using Single Design

The SpaRibs topology of an aircraft wing has a significant effect on its structural behavior and stability as well as the flutter performance. The development of additive manufacturing techniques like Electron Beam Free Form Fabrication (EBF3) has made it feasible to manufacture aircraft wings with curvilinear spars, ribs (SpaRibs) and stiffeners. In this article a new global-local optimization framework for wing with multiple sections using curvilinear SpaRibs is described. A single design space is used to parameterize the SpaRibs geometry. This method has been implemented using MSC-PATRAN to create a broad range of SpaRibs topologies using limited number of parameters. It ensures C0 and C1 continuities in SpaRibs geometry at the junction of two wing sections with airfoil thickness gradient discontinuity as well as mesh continuity between all structural components. This method is advantageous in complex multi-disciplinary optimization due to its potential to reduce the number of design variables. For the global-local optimization the local panels are generated by an algorithm which is totally based on a set algebra on the connectivity matrix data. The great advantage of this method is that it is completely independent of the coordinates of the nodes of the finite element model. It is also independent of the order in which the elements are distributed in the FEM. The code is verified by optimizing of the CRM Baseline model at trim condition at Mach number equal to 0.85 for five different angle of attack (-2deg, 0deg,2deg,4deg and 6deg). The final weight of the wing is 19,090.61 lb. This value is comparable to that obtained by Qiang et al. 6 (19,269 lb).

wing sections↗

Progress Towards High-Sensitivity Arrays of Detectors of Sub-mm Radiation using Superconducting Tunnel Junctions with Radio-Frequency Single-Electron Transistors

The science drivers for the SPIRIT/SPECS missions demand sensitive, fast, compact, low-power, large-format detector arrays for high resolution imaging and spectroscopy in the far infrared and submillimeter. Detector arrays with 10,000 pixels and sensitivity less than 10(exp 20)-20 W/Hz(exp 20)0.5 are needed. Antenna-coupled superconducting tunnel junction detectors with integrated rf single-electron transistor readout amplifiers have the potential for achieving this high level of sensitivity, and can take advantage of an rf multiplexing technique when forming arrays. The device consists of an antenna structure to couple radiation into a small superconducting volume and cause quasiparticle excitations, and a single-electron transistor to measure currents through tunnel junction contacts to the absorber volume. We will describe optimization of device parameters, and recent results on fabrication techniques for producing devices with high yield for detector arrays. We will also present modeling of expected saturation power levels, antenna coupling, and rf multiplexing schemes.

Stevenson, T. R.↗

Onset of dispersion in Nb microstrip transmission lines at submillimeter wave frequencies

We have measured the dispersion in phase velocity of a Nb-SiO(x)-Nb microstrip transmission line resonator over a frequency range from 50 GHz to 800 GHz. A submicron Nb/Al-AlO(x)/Nb Josephson junction was used as a voltage-controlled oscillator to excite the high order modes in the resonator. The same junction is used as a direct detector resulting in a series of step-like structures in the DC current-voltage characteristic at the position of each mode frequency. The transmission line is dispersionless up to about 500 GHz where the phase velocity begins to decrease. This is well below the gap frequency f(sub g) approx. equals 700 GHz. Results agree qualitatively with the expected theoretical behavior near f(sub g). This onset of dispersion and loss in Nb transmission lines will have a significant impact on the design of submillimeter wave RF circuits.

Javadi, H. H. S.↗

Integrated Power Source Grant

Traditional spacecraft power systems incorporate a solar array energy source, an energy storage element (battery), and battery charge control and bus voltage regulation electronics to provide continuous electrical power for spacecraft systems and instruments. Dedicated power conditioning components provide limited fault isolation between systems and instruments, while a centralized power-switching unit provides spacecraft load control. Battery undervoltage conditions are detected by the spacecraft processor, which removes fault conditions and non-critical loads before permanent battery damage can occur. Cost effective operation of a micro-sat constellation requires a fault tolerant spacecraft architecture that minimizes on-orbit operational costs by permitting autonomous reconfiguration in response to unexpected fault conditions. A new micro-sat power system architecture that enhances spacecraft fault tolerance and improves power system survivability by continuously managing the battery charge and discharge processes on a cell-by-cell basis has been developed. This architecture is based on the Integrated Power Source (US patent 5644207), which integrates dual junction solar cells, Lithium Ion battery cells, and processor based charge control electronics into a structural panel that can be deployed or used to form a portion of the outer shell of a micro-spacecraft. The first generation Integrated Power Source is configured as a one inch thick panel in which prismatic Lithium Ion battery cells are arranged in a 3x7 matrix (26VDC) and a 3x1 matrix (3.7VDC) to provide the required output voltages and load currents. A multi-layer structure holds the battery cells, as well as the thermal insulators that are necessary to protect the Lithium Ion battery cells from the extreme temperatures of the solar cell layer. Independent thermal radiators, located on the back of the panel, are dedicated to the solar cell array, the electronics, and the battery cell array. In deployed panel applications, these radiators maintain the battery cells in an appropriate operational temperature range.

Source record↗

Indium Phosphide Window Layers for Indium Gallium Arsenide Solar Cells

Window layers help in reducing the surface recombination at the emitter surface of the solar cells resulting in significant improvement in energy conversion efficiency. Indium gallium arsenide (In(x)Ga(1-x)As) and related materials based solar cells are quite promising for photovoltaic and thermophotovoltaic applications. The flexibility of the change in the bandgap energy and the growth of InGaAs on different substrates make this material very attractive for multi-bandgap energy, multi-junction solar cell approaches. The high efficiency and better radiation performance of the solar cell structures based on InGaAs make them suitable for space power applications. This work investigates the suitability of indium phosphide (InP) window layers for lattice-matched In(0.53)Ga(0.47)As (bandgap energy 0.74 eV) solar cells. We present the first data on the effects of the p-type InP window layer on p-on-n lattice-matched InGaAs solar cells. The modeled quantum efficiency results show a significant improvement in the blue region with the InP window. The bare InGaAs solar cell performance suffers due to high surface recombination velocity (10(exp 7) cm/s). The large band discontinuity at the InP/InGaAs heterojunction offers a great potential barrier to minority carriers. The calculated results demonstrate that the InP window layer effectively passivates the solar cell front surface, hence resulting in reduced surface recombination and therefore, significantly improving the performance of the InGaAs solar cell.

Jain, Raj K.↗

Development of ion implanted gallium arsenide transistors

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Hunsperger, R.↗