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InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy. The narrow ridge waveguide lasers lased at wavelengths near 2 mu m up to 25 degrees C in continuous-wave operation. At room temperature, a differential quantum efficiency of 13 percent is obtained and the maximum output optical power reaches 3 mW per facet with a threshold current density of 730 A/cm(sup 2). With increasing temperature the emission wavelength is extremely temperature stable, and a very low wavelength temperature sensitivity of 0.05 nm/degrees C is measured, which is even lower than that caused by the refractive index change.
Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.
In this paper, we present two single stage MMIC amplifiers with the first demonstrating a measured S21 gain of 3-dB at 280-GHz and the second demonstrating 2.5-dB gain at 300- GHz, which is the threshold of the sub-millimeter wave regime. The high-frequency operation is enabled by a high-speed InP HEMT with a 35-nm gate. This is the first demonstrated S21 gain at sub-millimeter wave frequencies in a MMIC.
A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.
This paper discusses the applicability of hybrid CMOS/InP-MMIC mm-Wave systems to remote sensing instrumentation for space exploration in Earth and Planetary science. We review the need for lower power and lighter weight instruments to accommodate the limited payload resources of exploration spacecraft, and then demonstrate how hybrid systems can address these challenges. An example hybrid CMOS-InP radiometer operating at 100 GHz is discoursed in detail including circuit & system design, interfacing and packaging techniques. Measurements are presented showing that the hybrid approach does not compromise instrument sensitivity.
We will present a Monolithic Millimeter-wave Integrated Circuit (MMIC) chip set which provides high output-power sources for driving diode frequency multipliers into the terahertz range. The chip set was fabricated at HRL Laboratories using a 0.l-μm gatelength InAI/InGaAs/InP high electron mobility transistor (HEMT) process, and features transistors with an fmax above 600 GHz. The HRL InP HEMT process has already demonstrated amplifiers in the 60-200 GHz range. In this paper, these high frequency HEMTs form the basis for power sources up to 170 GHz.
Single-stack InAsSb self-assembled quantum-dot lasers based on (001) InP substrate have been grown by metalorganic vapor-phase epitaxy.
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This paper presents some recently developed MMICs based on a 0.1 meu gate-length InAlAs/InGaAs/InP HEMT process with an fmax above 600 GHz.
We report on the performance of a novel W-band amplifier fabricated utilizing very compact bump bonds.
There are no author-identified significant results in this report.
The author has identified the following significant results. Soil resource studies in Brazil have concluded that: areas with agricultural activities appear surrounding urban centers; some areas are suffering a strong erosion action; there exist two drainage systems near Paraguai River and Parana River; and this region possesses great variety of soil types. It is possible to count the number of lakes and sluices as well as their superficial area using a channel 7 photographic enlargement. The great concentration of water bodies along the Jacui River determines the large rice crops. Data concerning regions around Teresina City, Presidente Prudente, Piracicaba City, Dourados, and Tres Marias Dam revealed several characteristics concerning the soil and water resources. Two basic maps were made of the natural vegetation distribution over central eastern Brazil from data ERTS-1 data. One map shows the drainage system, the road system, and cities; while the second shows the natural vegetation. It was possible to identify old reforestation, new reforestation, natural forest in flat lands, and natural forest in rolling lands from the ERTS images. Different pasture plant species could be identified by multispectral remote sensing. Data obtained along different wavelength bands provide essential data for the range manager to evaluate his range and to establish a suitable policy. Hydrographic mapping was done using the ERTS images.
There are no author-identified significant results in this report.
There are no author identified significant results in this report.
There are no author-identified significant results in this report.
There are no author-identified significant results in this report.