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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1983

Advanced methods for preparation and characterization of infrared detector materials

Crystals were prepared by the Bridgman-Stockbarger method with a wide range of crystal growth rates and temperature gradients adequate to prevent constitutional supercooling under diffusion-limited, steady-state, growth conditions. The longitudinal compositional gradients for different growth conditions and alloy compositions were calculated and compared with experimental data to develop a quantitative model of solute redistribution during the crystal growth of the alloys. Measurements were performed to ascertain the effect of growth conditions on radial compositional gradients. The pseudobinary HgTe-CdTe constitutional phase diagram was determined by precision differential-thermal-analysis measurements and used to calculate the segregation coefficient of Cd as a function of x and interface temperature. Experiments were conducted to determine the ternary phase equilibria in selected regions of the Hg-Cd-Te constitutional phase diagram. Electron and hole mobilities as functions of temperature were analyzed to establish charge-carrier scattering probabilities. Computer algorithms specific to Hg(1-x)CdxTe were developed for calculations of the charge-carrier concentration, charge-carrier mobilities, Hall coefficient, and Dermi Fermi energy as functions of x, temperature, ionized donor and acceptor concentrations, and neutral defect concentrations.

Broerman, J. G.↗
NASA NTRS1984

Two-dimensional infrared detector arrays

An introduction to overall IR array concepts and particular array designs is presented, and examples of laboratory and observational data obtained with IR arrays are given. Hybrid array designs, extrinsic silicon accumulation-mode charge injection devices, and switched-FET or switched-sample photoconductor techniques are summarized. Three recent astronomical observation projects which used IR arrays are examined.

Mccreight, C. R.↗
NASA NTRS1990

Field-Induced-Gap Infrared Detectors

Semimetals become semiconductors under applied magnetic fields. New detectors require less cooling equipment because they operate at temperatures higher than liquid-helium temperatures required by extrinsic-semiconductor detectors. Magnetic fields for detectors provided by electromagnets based on recently-discovered high-transition-temperature superconducting materials. Detector material has to be semiconductor, in which photon absorbed by exciting electron/hole pair across gap Eg of forbidden energies between valence and conduction energy bands. Magnetic- and compositional-tuning effects combined to obtain two-absorber detector having narrow passband. By variation of applied magnetic field, passband swept through spectrum of interest.

Elliott, C. Thomas↗
NASA NTRS1990

Infrared detector responsivity measured simultaneously at multiple frequencies

The responsivity (the ratio of the output electrical signal to the incident radiation power) of an IR detector is measured at several frequencies simultaneously. A computer-controlled variable frequency chopper is used. Chopper modulation of a blackbody is square-wave-like, hence measurements can be taken not only at the fundamental frequency but also at the harmonics. The technique gives excellent agreement with the classical technique of measuring the fundamental response alone at a set of modulation frequencies. With a small enough aperture and a high enough chopper speed, agreement can be within five percent out to 31 times the fundamental frequency. The technique allows the rapid and automated acquisition of the frequency response of IR detectors, which may then be screened for responsivity, noise, and noise equivalent power.

Brasunas, John C.↗
NASA NTRS1990

Novel Si(1-x)Ge(x)/Si heterojunction internal photoemission long-wavelength infrared detectors

The feasibility of a novel p(+)-Si(1-x)Ge(x)-p-Si heterojunction internal photoemission (HIP) IR detector is demonstrated. A degenerately doped p(x)-Si(1-x)Ge(x) layer is required for strong IR absorption to generate photoexcited holes. The Si(1-x)Ge(x) layers are grown by molecular beam epitaxy, with boron concentrations up to 10 to the 20th/cu cm achieved by using an HBO2 source. Photoresponse at wavelengths ranging from 2 to 10 microns has been obtained with quantum efficiencies above 1 percent. The tailorable cutoff wavelength of the HIP detector has been demonstrated by varying the Ge composition ratio in the Si(1-x)Ge(x) layers.

Lin, T. L.↗
NASA NTRS1991

Multiple-Quantum-Well Intersubband Infrared Detector

Proposed multiple-quantum-well intersubband semiconductor device detects photons over broader range of wavelengths. Device is stack of substacks, each of which contains quantum-well layers sensitive to different narrow band of wavelengths. Bandwidth and detectivity increased.

Borenstain, Shmuel I.↗
NASA NTRS1990

Low dark current photovoltaic multiquantum well long wavelength infrared detectors

The authors have, for the first time, demonstrated photovoltaic detection for an multiple quantum well (MQW) detector. With a blocking layer, the MQW detector exhibits Schottky I-V characteristics with extremely low dark current and excellent ideality factor. The dark current is 5 times 10(exp -14) A for an 100x100 square micron 10 micron detector at 40 K, 8 to 9 orders of magnitude lower than that of a similar 10 micron MQW detector without blocking layer. The ideality factor is about 1.01 to 1.05 at T = 40 to 80 K. The measured barrier height is consistent with the energy difference between first excited states and ground states, or the peak of spectral response. The authors also, for the first time, report the measured effective Richardson constant (A asterisk asterisk) for the GaAs/AlGaAs heterojunction using this blocking layer structure. The A asterisk asterisk is low approx. 2.3 A/sq cm/K(exp 2).

Wu, C. S.↗
NASA NTRS1990

Thermal design and verification of an instrument cooling system for infrared detectors utilizing the Oxford Stirling cycle refrigerator

A detailed nodal computer model was developed to thermally represent the hardware, and sensitivity studies were performed to evaluate design parameters and orbital environmental effects of an instrument cooling system for IR detectors. Thermal-vacuum testing showed excellent performance of the system and a correspondence with math model predictions to within 3 K. Results show cold stage temperature sensitivity to cold patch backload, outer stage external surface emittance degradation, and cold stage emittance degradation, respectively. The increase in backload on the cold patch over the mission lifetime is anticipated to be less than 3.0 watts, which translates to less than a 3-degree increase in detector temperatures.

Werrett, Stephen↗
NASA NTRS1992

Modified triglycine sulphate (TGS) single crystals for pyroelectric infrared detector applications

Effects of caesium and cerium, L-alanine, and caesium plus L-alanine impurities on ferroelectric and pyroelectric properties of TGS crystals are investigated. Dielectric constant and loss, pyroelectric coefficient, spontaneous polarization, and coercive field measurements of these modified crystals, as a function of temperature, are reported. Caesium and cerium did not affect the electrical properties of TGS crystals significantly, whereas L-alanine- and, especially, Cs + L-alanine-doped TGS crystals exhibited promising improvements in pyroelectric properties, up to 48 C, as compared to pure TGS crystals.

Banan, M.↗
NASA NTRS1993

High-Tc thermal bridges for space-borne cryogenic infrared detectors

The potential for using high-temperature superconductive elements, screen-printed onto ceramic substrates, as thermal bridges to replace the currently employed manganin wires is studied at NASA-LaRC. Substrate selection is considered to be the most critical parameter in device production. Due to the glass-like thermal behavior of yttria-stabilized-zirconia (YSZ) and fused silica substrates, these materials are found to reduce the heat load significantly. The estimated thermal savings for superconductive leads printed onto YSZ or fused silica substrates range from 6 to 14 percent.

Wise, S. A.↗
NASA NTRS1997

Development of 256 x 256 Element Impurity Band Conduction Infrared Detector Arrays for Astronomy

This report describes the work performed on a one and a half year advance technology program to develop Impurity Band Conduction (IBC) detectors with very low dark current, high quantum efficiency, and with good repeatable processes. The program fabricated several epitaxial growths of Si:As detecting layers from 15 to 35 microns thick and analyzed the performance versus the thickness and the Arsenic concentration of these epitaxial layers. Some of the epitaxial runs did not yield because of excessive residual impurities. The thicker epitaxial layers and the ones with higher Arsenic concentration resulted in good detectors with low dark currents and good quantum efficiency. The program hybridized six detector die from the best detector wafers to a low noise, 256 x 256 readout array and delivered the hybrids to NASA Ames for a more detailed study of the performance of the detectors.

Domingo, George↗
NASA NTRS2000

Prototyping Mid-Infrared Detector Data Processing Algorithms

Over the past year, much progress has been accomplished to complete this study. The last data collection segment was completed and all data was analyzed. The data from the Functional Mobility Course were presented at a scientific meeting. The entire study will be presented at the National Student Researcher's Forum in May.

data processing↗
NASA NTRS2009

The 55Fe X-ray Energy Response of Mercury Cadmium Telluride Near-Infrared Detector Arrays

A technique involving Fe-55 X-rays provides a straightforward method to measure the response of a detector. The detector's response can lead directly to a calculation of the conversion gain (e(-) ADU(-1) ), as well as aid detector design and performance studies. We calibrate the Fe-15 X-ray energy response and pair production energy of HgCdTe using 8 HST WFC3 1.7 micron flight grade detectors. The results show that each Ka X-ray generates 2273 +/- 137 electrons, which corresponds to a pair-production energy of 2.61 +/- 0.16 eV. The uncertainties are dominated by our knowledge of the conversion gain. In future studies, we plan to eliminate this uncertainty by directly measuring conversion gain at very low light levels.

Fox, Ori↗
NASA NTRS2010

nBn and pBp infrared detectors with graded barrier layer, graded absorption layer, or chirped strained layer super lattice absorption layer

An nBn detector is described where for some embodiments the barrier layer has a concentration gradient, for some embodiments the absorption layer has a concentration gradient, and for some embodiments the absorption layer is a chirped strained layer super lattice. The use of a graded barrier or absorption layer, or the use of a chirped strained layer super lattice for the absorption layer, allows for design of the energy bands so that the valence band may be aligned across the device. Other embodiments are described and claimed.

Gunapala, Sarath D.↗
NASA NTRS2013

Complementary Barrier Infrared Detector (CBIRD) Contact Methods

The performance of the CBIRD detector is enhanced by using new device contacting methods that have been developed. The detector structure features a narrow gap adsorber sandwiched between a pair of complementary, unipolar barriers that are, in turn, surrounded by contact layers. In this innovation, the contact adjacent to the hole barrier is doped n-type, while the contact adjacent to the electron barrier is doped p-type. The contact layers can have wider bandgaps than the adsorber layer, so long as good electrical contacts are made to them. If good electrical contacts are made to either (or both) of the barriers, then one could contact the barrier(s) directly, obviating the need for additional contact layers. Both the left and right contacts can be doped either n-type or ptype. Having an n-type contact layer next to the electron barrier creates a second p-n junction (the first being the one between the hole barrier and the adsorber) over which applied bias could drop. This reduces the voltage drop over the adsorber, thereby reducing dark current generation in the adsorber region.

Ting, David Z.↗