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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Comparison of bioseparation methods for microgravity experiments

The efficiency of the 1-g version of the continuous-flow electrophoresis (CFE) system flown on Space Shuttle missions is compared with the efficiency of a commercial CFE for separating living cells (human kidney, liver, and pituitary-gland cells and T-lymphocytes). In addition, the CFE system and a reciprocal isoelectric focusing (RIEF) system are compared with respect to protein pyrification efficiency. Correlations were made among electrophoretic mobilities (EPMs), secretory functions of cells, and input sample concentrations. A significant reduction in mean and range EPM was observed when input sample concentrations exceeded a low threshohold. This effect was not observed in microgravity experiments conducted at sample concentrations three times greater than the threshold for the controls. Comparison of CFE and RIEF methods showed that there are apparent advantages for each method depending on the product. For example, RIEF purification of urokinase removed more protein impurities, but focused the enzyme at a pH different than the enzyme's known isoelectric point.

Morrison, Dennis R.↗
NASA NTRS1984

Oxygen in GaAs - Direct and indirect effects

Oxygen has profound effects on the key electronic properties and point defects of GaAs crystals. Thus, when added in the growth system, it decreases the free electron concentration and enhances the concentration of deep donors in the resulting crystals. Both of these effects are highly beneficial for achieving semi-insulating material and have been utilized for that purpose. They have been attributed to the tendency of oxygen to getter silicon impurities during crystal growth. Only recently, it has been found that oxygen in GaAs introduces also a midgap level, ELO, with essentially the same activation energy as EL2 but with four times greater electron capture cross section. The present report reassesses the electrical and optical properties of the midgap levels in GaAs crystals grown by the horizontal Bridgman (HB) and the Czochralski-LEC techniques. Emphasis is placed on the identification of the specific effects of ELO.

Gatos, H. C.↗
NASA NTRS1986

Process-induced defects in solar cell silicon

The microstructure of as-grown and processed, edge-defined film-fed grown, silicon ribbons was studied in order to identify the basic mechanisms responsible for the change of the as-grown defect structure during processing at elevated temperatures. The short heat treatment required to diffuse the p-n junction was sufficient to cause heterogeneous precipitation of impurity atoms, particularly transition metals. In addition, an elastic recovery of the ribbon occurred by dislocation glide, resulting in the formation of a polygonizationlike structure of subboundaries in the base. Mechanisms are suggested by which twin boundaries, acting as dislocation obstacles, can concentrate the relatively low average dislocation densities typical of edge-defined film-fed grown ribbons (10 to the 4th to 10 to the 8th/sq cm) to values which are sufficient to induce the formation of subgrainlike boundary structures.

Gleichmann, R.↗
NASA NTRS1982

Effect of aluminum phosphate additions on composition of three-component plasma-sprayed solid lubricant

Image analysis (IA) and electron microprobe X-ray analysis (EMXA) were used to characterize a plasma-sprayed, self-lubricating coating, NASA LUBE PS106, specified by weight percent as 35NiCr-35Ag-30CaF2. To minimize segregation of the powder mixture during the plasma-spraying procedure, monoaluminum phosphate was added to form agglomerate particles. Three concentrations of AlPO4 were added to the mixtures: 1.25, 2.5, and 6.25 percent by weight. Analysis showed that 1.25 wt% AlPO4 yielded a CaF2 deficiency, 2.5 wt% kept the coating closest to specification, and 6.25 wt% yielded excess CaF2 as well as more impurities and voids and a deficiency in silver. Photomicrographs and X-ray maps are presented. The methods of IA and EMXA complement each other, and the reasonable agreement in the results increases the confidence in determining the coating composition.

Jacobson, T. P.↗
NASA NTRS1996

Observations of Dynamic Strain Aging in Polycrystalline NiAl

Dynamic strain aging has been investigated at temperatures between 77 and 1100 K in eight polycrystalline NiAl alloys. The 0.2% offset yield stress and work hardening rates for these alloys generally decreased with increasing temperature. However, local plateaus or maxima were observed in conventional purity and carbon doped alloys at intermediate temperatures (600-900 K). This anomalous behavior was not observed in low interstitial high-purity, nitrogen doped, or in titanium doped materials. Low or negative strain rate sensitivities (SRS) were also observed in all eight alloys in this intermediate temperature range. Coincident with the occurrence of negative SRS was the occurrence of serrated flow in conventional purity alloys containing high concentrations of Si in addition to C. These phenomena have been attributed to dynamic strain aging (DSA). Chemical analysis of the alloys used in this study suggests that the main species causing strain aging in polycrystalline NiAl is C but indicate that residual Si impurities can enhance the strain aging effect.

Weaver, M. L.↗
NASA NTRS1982

Recent progress in picosecond pulse generation from semiconductor lasers

This paper reviews the recent progress in producing picosecond optical pulses from semiconductor laser diodes. The discussion concentrates on the mode-locking of a semiconductor laser diode in an external resonator. Transform-limited optical pulses ranging from several picoseconds to subpicosecond durations have been observed with active and passive mode-locking. Even though continuing research on the influence of impurities and defects on the mode-locking process is still needed, this technique has good promise for being utilized in fiber-optic communication systems. Alternative methods of direct electrical and optical excitation to produce ultrashort laser pulses are also described. They can generate pulses of similar widths to those obtained by mode-locking. The pulses generated will find applications in laser ranging and detector response measurement.

Auyeung, J. C.↗
NASA NTRS1975

Shock tube study of ionization rates of NaCl-contaminated argon

Spectrally resolved radiometry and a microwave technique were used to measure the electron density, electron temperature, and concentration, and the concentration of sodium atoms in the weakly ionized region behind a shock wave in an argon shock tube. It is shown that the observed increase in the ionization rate is due to electron detachment of negative chlorine ions produced from sodium chloride vapor contained as an impurity in the argon gas. The observed behavior of the electron temperature in time and the reactions controlled by the electron temperature are analyzed in the light of the impurity reaction scheme.

Scheneider, C.-P.↗
NASA NTRS2001

Photoluminescence Studies of ZnSe Starting Materials and Vapor Grown Bulk Crystals

Low-temperature photoluminescence (PL) spectra were measured on ZnSe starting materials provided by various vendors and on bulk crystals grown from these starting materials by physical vapor transport (PVT) to study the effects of purification and contamination during PVT process. The impurity levels in one set of starting material/grown crystal were also measured by glow discharge mass spectroscopy (GDMS). The purification effect of pre-growth heat treatments and the PVT process is evidenced from the GDMS results which showed orders of magnitude reduction in the Li and Na concentration and a factor of 3 reduction in the O content after growth. The PL spectra showed that the strong emissions associated with Li (or Na) in one of the starting materials disappeared after growth. The GDMS results also showed increases in the At and Si contents by orders of magnitude after growth. To evaluate the contamination of the crystal during the high temperature growth process, three growth runs were processed using similar growth parameters but different furnace environments. The PL spectra suggest that the At contamination originated from the fused silica ampoule and that the Inconel cartridge might have been the cause of the broad Cu green and Cu red bands observed in one of the grown crystals.

Su, Ching-Hua↗
NASA NTRS2009

Sheet Membrane Spacesuit Water Membrane Evaporator Thermal Test

For future lunar extravehicular activities (EVA), one method under consideration for rejecting crew and electronics heat involves evaporating water through a hydrophobic, porous Teflon(Registered Trademark) membrane. A Spacesuit Water Membrane Evaporator (SWME) prototype using this membrane was successfully tested by Ungar and Thomas (2001) with predicted performance matching test data well. The above referenced work laid the foundation for the design of a compact sheet membrane SWME development unit for use in the Constellation System Spacesuit Element Portable Life Support System (Vogel and et. al., ICES 2008). Major design objectives included minimizing mass, volume, and manufacturing complexity while rejecting a minimum of 810 watts of heat from water flowing through the SWME at 91 kg/hr with an inlet temperature of 291K. The design meeting these objectives consisted of three concentric cylindrical water channels interlaced with four water vapor channels. Two units were manufactured for the purpose of investigating manufacturing techniques and performing thermal testing. The extensive thermal test measured SWME heat rejection as a function of water inlet temperatures, water flow-rates, water absolute pressures, water impurities, and water vapor back-pressures. This paper presents the test results and subsequent analysis, which includes a comparison of SWME heat rejection measurements to pretest predictions. In addition, test measurements were taken such that an analysis of the commercial-off-the-shelf vapor pressure control valve could be performed.

Trevino, Luis A.↗
NASA NTRS1977

Plugging of cooling holes in film-cooled turbine vanes

The plugging of vane cooling holes by impurities in a marine gas turbine was closely simulated in burner rig tests where dopants were added to the combustion products of a clean fuel (Jet-A). Hole plugging occurred when liquid phases, resulting from the dopants, were present in the combustion products. Increasing flame temperature and dopant concentration resulted in an increased rate of deposition and hole plugging.

Deadmore, D. L.↗
NASA NTRS1995

Sub-ppb Oxygen Contaminant Detection in Semi-Conductor Processing

Gaseous contaminants such as oxygen, water vapor, nitrogen and hydrocarbons are often present in the processing environment in semiconductor device fabrication and in containerless materials processing. The contaminants arise as a result of outgassing from hot surfaces or they may be part of the impurities in commercial ultra-high purity gases. Among these gaseous contaminants, oxygen is the most reactive and, therefore, has the most adverse effects on the end product. There has been an intense effort at the Jet Propulsion Laboratory to develop different types of oxygen sorbents to reduce oxygen concentration in a microgravity processing environment to sub-ppb (parts-per-billion) levels. Higher concentrations can lead to rapid surface oxide formation, hence reducing the quality of semiconductor devices. If the concentration of oxygen in a processing chamber at 1000oC is in the ppb level, it will only take approximately 10 seconds for an oxide layer to form on the surface of a sample. The interaction of oxygen with the water surface can lead to the formation of localized defects in semi-conductor devices, hence decreasing the manufacturing yield. For example, efficient production of 64 Mb RAM chips requires contaminations below ppb levels. This paper describes a technique for measuring trace quantities of oxygen contaminants by recording the monoatomic negative ions, O-, using mass spectrometry. The O- formation from the e--O2 interaction utilizes the electron dissociative attachment method that is greatly enhanced at the resonant energy (6.8 eV). The device combines a small gridded electron ionizer with a compact mass spectrometer. The concentrations of oxygen have been measured using the method of standard additions by diluting O2 in N2. The lowest detection limit obtained was 1.2 kHz (O- count rate) at a concentration of 10-10, corresponding to 0.1 ppb.

Sub-ppb Contaminant↗
NASA NTRS1972

Piezoresistance and hole transport in beryllium-doped silicon.

The resistivity and piezoresistance of p-type silicon doped with beryllium have been studied as a function of temperature, crystal orientation, and beryllium doping concentration. It is shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gauge factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, while the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Littlejohn, M. A.↗
NASA NTRS1974

Low temperature coefficient of resistance and high gage factor in beryllium-doped silicon

The gage factor and resistivity of p-type silicon doped with beryllium was studied as a function of temperature, crystal orientation, and beryllium doping concentration. It was shown that the temperature coefficient of resistance can be varied and reduced to zero near room temperature by varying the beryllium doping level. Similarly, the magnitude of the piezoresistance gage factor for beryllium-doped silicon is slightly larger than for silicon doped with a shallow acceptor impurity such as boron, whereas the temperature coefficient of piezoresistance is about the same for material containing these two dopants. These results are discussed in terms of a model for the piezoresistance of compensated p-type silicon.

Robertson, J. B.↗
NASA NTRS1985

Role of hydroxide impurities in the thermoluminescent behavior of lithium fluoride

The influence of OH ion impurities on thermoluminescent sensitivity and supralinearity in LiF:Mg, Ti is analyzed. Available evidence is shown to be consistant with the presence of Ti-OH and Mg-OH complexes. The track interaction model is used to explain the data, with competing centers decreasing sensitivity and supralinearity at high concentrations.

Stoebe, T. G.↗
NASA NTRS1993

The effects of alloy purity on the mechanical behavior of soft oriented NiAl single crystals

Preliminary results of the effects of alloy purity on the mechanical properties of NiAl single crystals are presented. Two stoichiometric NiAl single crystals with different impurity contents were studied. It is concluded that reductions in the interstitial and substitutional levels cause reduced yield strengths in NiAl. Heat treatment also results in reduced yield and flow stresses in both CP-NiAl and Hp-NiAl which are considered to be due to a reduction in the concentration of thermal vacancies due to vacancy coalescence during heat treatment.

Weaver, M. L.↗
NASA NTRS1995

Boson localization and universality in YBa2Cu(3-x)M(x)O(7-delta)

We consider a two component mixture of charged fermions on neutralizing background with all sign combinations and arbitrarily small mass ratios. In the two impurity limit for the heavier component we show that the pair forms a bound state for all charge combinations. In the lowest order approximation we derive a closed form expression Veff(r) for the binding potential which has short-range repulsion followed by attraction. In the classical limit, when the mass of embedded particles is large m2 much greater than m, we can calculate from Veff(r) also the cohesive energy E and the bond length R of a metallic crystal such as lithium. The lowest order result is R = 3.1 A, E = -0.9 eV, not entirely different from the experimental result for lithium metal. The same interaction for two holes on a parabolic band with m2 greater than m gives the quantum mechanical bound state which one may interpret as a boson or local pair in the case of high-Te and heavy fermion superconductors. We also show that for compounds of the type YBa2Cu(3 - x)M(x)O(7 - delta) one can understand most of the experimental results for the superconducting and normal states with a single temperature dependent boson breaking function f(T) for each impurity content x governing the decay of bosons into pairing fermions. In the normal state f(T) turns out to be a linear, universal function, independent of the impurity content I and the oxygen content delta. We predict with universality a depression in Tc(x) with slight down bending in agreement with experiment. As a natural consequence of the model the bosons become localized slightly above Tc due to the Wigner crystallization, enhanced with lattice local field minima. The holes remain delocalized with a linearly increasing concentration in the normal state, thus explaining the rising Hall density. The boson localization temperature T(sub BL) shows up as a minimum in the Hall density R(sub ab)(exp -1). We also give explanation for very recently observed scaling of temperature dependent Hall effect in La(2 - x)Sr(x)CuO4.

Kallio, A.↗
NASA NTRS1985

Native hole trap in bulk GaAs and its association with the double-charge state of the arsenic antisite defect

A dominant hole trap has been identified in p-type bulk GaAs employing deep level transient and photocapacitance spectroscopies. The trap is present at a concentration up to about 4 x 10 to the 16th per cu cm, and it has two charge states with energies 0.54 + or - 0.02 and 0.77 + or - 0.02 eV above the top of the valence band (at 77 K). From the upper level the trap can be photoexcited to a persistent metastable state just as the dominant midgap level, EL2. Impurity analysis and the photoionization characteristics rule out association of the trap with impurities Fe, Cu, or Mn. Taking into consideration theoretical results, it appears most likely that the two charge states of the trap are the single and double donor levels of the arsenic antisite As(Ga) defect.

Lagowski, J.↗
NASA NTRS1994

An Acoustic Charge Transport Imager for High Definition Television Applications: Reliability Modeling and Parametric Yield Prediction of GaAs Multiple Quantum Well Avalanche Photodiodes

Reliability modeling and parametric yield prediction of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiodes (APDs), which are of interest as an ultra-low noise image capture mechanism for high definition systems, have been investigated. First, the effect of various doping methods on the reliability of GaAs/AlGaAs multiple quantum well (MQW) avalanche photodiode (APD) structures fabricated by molecular beam epitaxy is investigated. Reliability is examined by accelerated life tests by monitoring dark current and breakdown voltage. Median device lifetime and the activation energy of the degradation mechanism are computed for undoped, doped-barrier, and doped-well APD structures. Lifetimes for each device structure are examined via a statistically designed experiment. Analysis of variance shows that dark-current is affected primarily by device diameter, temperature and stressing time, and breakdown voltage depends on the diameter, stressing time and APD type. It is concluded that the undoped APD has the highest reliability, followed by the doped well and doped barrier devices, respectively. To determine the source of the degradation mechanism for each device structure, failure analysis using the electron-beam induced current method is performed. This analysis reveals some degree of device degradation caused by ionic impurities in the passivation layer, and energy-dispersive spectrometry subsequently verified the presence of ionic sodium as the primary contaminant. However, since all device structures are similarly passivated, sodium contamination alone does not account for the observed variation between the differently doped APDs. This effect is explained by the dopant migration during stressing, which is verified by free carrier concentration measurements using the capacitance-voltage technique.

Hunt, W. D.↗