Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “heavy ion testing”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

Verification of Dosimetry Measurements with Timepix Pixel Detectors for Space Applications

The current capabilities of modern pixel-detector technology has provided the possibility to design a new generation of radiation monitors. Timepix detectors are semiconductor pixel detectors based on a hybrid configuration. As such, the read-out chip can be used with different types and thicknesses of sensors. For space radiation dosimetry applications, Timepix devices with 300 and 500 microns thick silicon sensors have been used by a collaboration between NASA and University of Houston to explore their performance. For that purpose, an extensive evaluation of the response of Timepix for such applications has been performed. Timepix-based devices were tested in many different environments both at ground-based accelerator facilities such as HIMAC (Heavy Ion Medical Accelerator in Chiba, Japan), and at NSRL (NASA Space Radiation Laboratory at Brookhaven National Laboratory in Upton, NY), as well as in space on board of the International Space Station (ISS). These tests have included a wide range of the particle types and energies, from protons through iron nuclei. The results have been compared both with other devices and theoretical values. This effort has demonstrated that Timepix-based detectors are exceptionally capable at providing accurate dosimetry measurements in this application as verified by the confirming correspondence with the other accepted techniques.

Kroupa, M.↗

Recent Radiation Test Results for Trench Power MOSFETs

Single-event effect (SEE) radiation test results are presented for various trench-gate power MOSFETs. The heavy-ion response of the first (and only) radiation-hardened trench-gate power MOSFET is evaluated: the manufacturer SEE response curve is verified and importantly, no localized dosing effects are measured, distinguishing it from other, non-hardened trench-gate power MOSFETs. Evaluations are made of n-type commercial and both n- and p-type automotive grade trench-gate device using ions comparable to of those on the low linear energy transfer (LET) side of the iron knee of the galactic cosmic ray spectrum, to explore suitability of these parts for missions with higher risk tolerance and shorter duration, such as CubeSats. Part-to-part variability of SEE threshold suggests testing with larger sample sizes and applying more aggressive derating to avoid on-orbit failures. The n-type devices yielded expected localized dosing effects including when irradiated in an unbiased (0-V) configuration, adding to the challenge of inserting these parts into space flight missions.

Schottky Diodes↗

Single Event Transients in Linear Integrated Circuits

On November 5, 2001, a processor reset occurred on board the Microwave Anisotropy Probe (MAP), a NASA mission to measure the anisotropy of the microwave radiation left over from the Big Bang. The reset caused the spacecraft to enter a safehold mode from which it took several days to recover. Were that to happen regularly, the entire mission would be compromised, so it was important to find the cause of the reset and, if possible, to mitigate it. NASA assembled a team of engineers that included experts in radiation effects to tackle the problem. The first clue was the observation that the processor reset occurred during a solar event characterized by large increases in the proton and heavy ion fluxes emitted by the sun. To the radiation effects engineers on the team, this strongly suggested that particle radiation might be the culprit, particularly when it was discovered that the reset circuit contained three voltage comparators (LM139). Previous testing revealed that large voltage transients, or glitches appeared at the output of the LM139 when it was exposed to a beam of heavy ions [NI96]. The function of the reset circuit was to monitor the supply voltage and to issue a reset command to the processor should the voltage fall below a reference of 2.5 V [PO02]. Eventually, the team of engineers concluded that ionizing particle radiation from the solar event produced a negative voltage transient on the output of one of the LM139s sufficiently large to reset the processor on MAP. Fortunately, as of the end of 2004, only two such resets have occurred. The reset on MAP was not the first malfunction on a spacecraft attributed to a transient. That occurred shortly after the launch of NASA s TOPEX/Poseidon satellite in 1992. It was suspected, and later confirmed, that an anomaly in the Earth Sensor was caused by a transient in an operational amplifier (OP-15) [KO93]. Over the next few years, problems on TDRS, CASSINI, [PR02] SOHO [HA99,HA01] and TERRA were also attributed to transients. In some cases, such events produced resets by falsely triggering circuits designed to protect against over- voltage or over-current. On at least three occasions, transients caused satellites to switch into "safe mode" in which most of the systems on board the satellites were powered down for an extended period. By the time the satellites were reconfigured and returned to full operational state, much scientific data had been lost. Fortunately, no permanent damage occurred in any of the systems and they were all successfully re-activated.

Buchner, Stephen↗

Recent Radiation Damage and Single Event Effect Results for Candidate Spacecraft Electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy-ion induced single-event effects and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.

Martha V. OBryan↗

Design and qualification of the SEU/TD Radiation Monitor chip

This report describes the design, fabrication, and testing of the Single-Event Upset/Total Dose (SEU/TD) Radiation Monitor chip. The Radiation Monitor is scheduled to fly on the Mid-Course Space Experiment Satellite (MSX). The Radiation Monitor chip consists of a custom-designed 4-bit SRAM for heavy ion detection and three MOSFET's for monitoring total dose. In addition the Radiation Monitor chip was tested along with three diagnostic chips: the processor monitor and the reliability and fault chips. These chips revealed the quality of the CMOS fabrication process. The SEU/TD Radiation Monitor chip had an initial functional yield of 94.6 percent. Forty-three (43) SEU SRAM's and 14 Total Dose MOSFET's passed the hermeticity and final electrical tests and were delivered to LL.

Buehler, Martin G.↗

Assessing the SEU resistance of CMOS latches using alpha-particle sensitive test circuits

The importance of Cosmic Rays on the performance of integrated circuits (IC's) in a space environment is evident in the upset rate of the Tracking and Data Relay Satellite (TDRS) launched in Apr. 1983. This satellite experiences a single-event-upset (SEU) per day which must be corrected from the ground. Such experience caused a redesign of the Galileo spacecraft with SEU resistant IC's. The solution to the SEU problem continues to be important as the complexity of spacecraft grows, the feature size of IC's decreases, and as space systems are designed with circuits fabricated at non-radiation hardened foundries. This paper describes an approach for verifying the susceptibility of CMOS latches to heavy-ion induced state changes. The approach utilizes alpha particles to induce the upsets in test circuits. These test circuits are standard cells that have offset voltages which sensitize the circuits to upsets. These results are then used to calculate the upsetability at operating voltages. In this study results are presented for the alpha particle upset of a six-transistor static random access memory (SRAM) cell. Then a methodology is described for the analysis of a standard-cell inverter latch.

Buehler, M.↗

Single-event Effect Report for EPC Series eGaN FETs: Proton Testing for SEE and TNID Effects

Previous testing of the Enhanced Power Conversion (EPC) eGaN FETs showed sensitivity to destructive single-event effects (SEE) effects to heavy ions. The presence of tungsten plugs in the gate area raises concerns that the device may be vulnerable to SEE from protons. Irradiation of biased and unbiased devices with heavy ion has results in some damage suspected of being due to total non-ionizing dose (TNID). Proton irradiation is a better radiation type to study this effect. This study presents the results of testing device with protons for SEE and TNID. No SEE in the EPC2012 device, the most sensitive device to SEE, were seen with 53 MeV protons at several angles. The devices continued to function after 1.5 Mrad (Si) of proton dose with only a slight shift in parameters. These results suggest that gross TNID will not be a factor in using these devices nor suffer from SEE due to protons. However, the device should be tested at with 500 MeV protons to guarantee to immunity proton SEE.

Scheick, Leif↗

Evaluation of Late Effects of Heavy-Ion Radiation on Mesenchymal Stem Cells

The overall objective of this recently funded study is to utilize well-characterized model test systems to assess the impact of pluripotent stem cell differentiation on biological effects associated with high-energy charged particle radiation. These stem cells, specifically mesenchymal stem cells (MSCs), have the potential for differentiation into bone, cartilage, fat, tendons, and other tissue types. The characterization of the regulation mechanisms of MSC differentiation to the osteoblastic lineage by transcription factors, such as Runx2/Cbfa1 and Osterix, and osteoinductive proteins such as members of the bone morphogenic protein family are well established. More importantly, for late biological effects, MSCs have been shown to contribute to tissue restructuring and repair after tissue injury. The complex regulation of and interactions between inflammation and repair determine the eventual outcome of the responses to tissue injury, for which MSCs play a crucial role. Additionally, MSCs have been shown to respond to reactive oxygen species, a secondary effector of radiation, by differentiating. With this, we hypothesized that differentiation of MSCs can alter or exacerbate the damage initiated by radiation, which can ultimately lead to late biological effects of misrepair/fibrosis which may ultimately lead to carcinogenesis. Currently, studies are underway to examine high-energy X-ray radiation at low and high doses, approximately 20 and 200 Rad, respectively, on cytogenetic damage and gene modulation of isolated MSCs. These cells, positive for MSC surface markers, were obtained from three persons. In vitro cell samples were harvested during cellular proliferation and after both cellular recovery and differentiation. Future work will use established in vitro models of increasing complexity to examine the value of traditional 2D tissue-culture techniques, and utilize 3D in vitro tissue culture techniques that can better assess late effects associated with radiation.

Gonda, S.R.↗

Precise Determination of the 1s Lamb Shift in Hydrogen-Like Lead and Gold Using Microcalorimeters

Quantum electrodynamics in very strong Coulomb fields is one scope which has not yet been tested experimentally with sufficient accuracy to really determine whether the perturbative approach is valid. One sensitive test is the determination of the 1s Lamb shift in highly-charged very heavy ions. The 1s Lamb shift of hydrogen-like lead (Pb81+) and gold (Au78+) has been determined using the novel detector concept of silicon microcalorimeters for the detection of hard x-rays. The results of (260 +/- 53) eV for lead and (211 +/- 42) eV for gold are within the error bars in good agreement with theoretical predictions. To our knowledge, for hydrogen-like lead, this represents the most accurate determination of the 1s Lamb shift.

microcalorimeters for↗

Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

Single Event Effects (SEE)↗

Investigation for single-event upset in MSI devices

The reported investigation shows that low-power TTL, standard TTL, low-power Schottky, and Schottky devices are all subject to upset by heavy ions. Low-power Schottky was the most sensitive of the device technologies tested. No evidence was found to correlate sensitivity to cosmic rays with any particular device manufacturer. The probability of upset of the logic devices is comparable to that of RAM's on a per-flip-flop basis, based on RAM data obtained by Kolasinski et al. (1979). The testing was performed by subjecting the devices to 120 MeV krypton ions from a cyclotron.

Woods, J. P.↗

Wide Range SET Pulse Measurement

A method for measuring a wide range of SET pulses is demonstrated. Use of dynamic logic, faster than ordinary CMOS, allows capture of short pulses. A weighted binning of SET lengths allows measurement of a wide range of pulse lengths with compact circuitry. A pulse-length-conservative pulse combiner tree routes SETs from combinational logic to the measurement circuit, allowing SET measurements in circuits that cannot easily be arranged in long chains. The method is applied to add-multiplex combinational logic, and to an array of NFET routing switches, at .35 micron. Pulses are captured in a chain of Domino Logic AND gates. Propagation through the chain is frozen on the trailing edge by dropping low the second "enable" input to the AND gates. Capacitive loading is increased in the latter stages to create an approximately logarithmic weighted binning, so that a broad range of pulse lengths can be captured with a 10 stage capture chain. Simulations show pulses can be captured which are 1/5th the length of those typically captured with leading edge triggered latch methods, and less than the length of those captured with a trailing edge latch method. After capture, the pulse pattern is transferred to an SEU protected shift register for readout. 64 instances of each of two types of logic are used as targets. One is a full adder with a 4 to 1 mux on its inputs. The other is a 4 x 4 NFET routing matrix. The outputs are passed through buffered XNOR comparators to identify pulses, which are merged in a buffered not-nand (OR) tree designed to avoid pulse absorption as much as possible. The output from each of the two test circuits are input into separate pulse measurement circuits. Test inputs were provided so that the circuit could be bench tested and calibrated. A third SET measurement circuit with no inputs was used to judge the contribution from direct hits on the measurement circuit. Heavy ions were used with an LET range from 12 to 176. At LET of 21 and below, the very small number of SETs were not significantly higher in the test over the control circuits. At higher LET the test circuit SETs are one or two orders of magnitude greater than for the control circuit. The NFET circuit produces more and slightly longer SETs as expected. But the differences do not appear to be significant enough to modify strategies now used to avoid capture of SETs in chips such as FPGAs. Complete data and graphs will be in the full paper / presentation. In the summary figure below left, NOCL is the reference circuit without any input, and number of stages triggered is plotted. Simulation at right shows the smallest pulse captured (stage 2) at about 300 ps. Our conclusion is that the method is promising, but that improvements in the merge network are desirable before applying in a deep submicron process

Shuler, Robert L.↗