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At least 199 records · Page 11

Fluid mechanics in crystal growth - The 1982 Freeman scholar lecture

An attempt is made to unify the current state of knowledge in crystal growth techniques and fluid mechanics. After identifying important fluid dynamic problems for such representative crystal growth processes as closed tube vapor transport, open reactor vapor deposition, and the Czochralski and floating zone melt growth techniques, research results obtained to date are presented. It is noted that the major effort to date has been directed to the description of the nature and extent of bulk transport under realistic conditions, where bulk flow determines the heat and solute transport which strongly influence the temperature and concentration fields in the vicinity of the growth interface. Proper treatment of near field, or interface, problems cannot be given until the far field, or global flow, involved in a given crystal growth technique has been adequately described.

Ostrach, S.↗

Effect of crystal orientation on anisotropic etching and MOCVD growth of grooves on GaAs

Grooves can be formed on GaAs by wet-chemical anisotropic etching of surfaces masked by photoresist stripes. The effect of crystal orientation on the shape of the grooves etched and on subsequent epitaxial growth by MOCVD is presented. The polar lattice increases the complexity of the etching and growth processes. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher order planes.

Bailey, Sheila G.↗

Combined buoyancy-thermocapillary convection

Combined buoyancy-thermocapillary convection was studied in 2D and 3D. Fluid motion caused by thermally induced tension gradients on the free surface of a fluid is termed thermocapillary convection. It is well-known that in containerless processing of materials in space, thermocapillary convection is a dominant mechanism of fluid flow. Welding and crystal growth processes are terrestrial applications where thermocapillary convection has direct relevance.

Homsy, G. M.↗

Silicon film solar cell process

The most promising way to reduce the cost of silicon in solar cells while still maintaining performance is to utilize thin films (10 to 20 microns thick) of crystalline silicon. The method of solution growth is being employed to grow thin polycrystalline films of silicon on dissimilar substrates. The initial results indicate that, using tin as the solvent, this growth process only requires operating temperatures in the range of 800 C to 1000 C. Growth rates in the range of 0.4 to 2.0 microns per minute and grain sizes in the range of 20 to 100 microns were achieved on both quartz and coated steel substrates. Typically, an aspect ratio of two to three between the width and the Si grain thickness is seen. Uniform coverage of Si growth on quartz over a 2.5 x 2.5 cm area was observed.

Hall, R. B.↗

Numerical Study of Mineral Nucleation and Growth on a Substrate

We report nucleation and growth processes of minerals and other crystals can significantly affect one another due to the transport limitations and local depletion of reactive ions in the solution. Most numerical models and experimental measurements have typically focused on either growth or nucleation, but not both. In this work, we incorporate a heterogeneous nucleation process based on classical nucleation theory into a microcontinuum model that implements the Darcy–Brinkman–Stokes approach to study the interplay between nucleation and crystal growth on a substrate in diffusive systems. We demonstrate how the Damköhler number (reaction rate) and nucleation rate prefactor change the effective nucleation rate on a substrate. Higher surface growth rates deplete the solute concentration around the nuclei that appear initially on the substrate, creating islands that screen against further nucleation. The model predicts that measured nucleation rates may be affected by the history of crystal nucleation on the substrate. In the extreme case of high growth rates relative to diffusion, it predicts that the rate of subsequent nucleation is limited by reactant depletion. We introduce a nondimensional number α to represent the relation between surface propagation rate during growth and the heterogeneous nucleation rate. We show that it is important to control Damköhler number and α to achieve similar precipitation regimes at different reaction and nucleation rates. We suggest that the observed universality can guide the interpretation of experimental results on nucleation rates, since matching experiment can be achieved by tuning transport, reaction, and nucleation parameters simultaneously. In addition, we show how the bulk solution concentration affects the structure and topology of precipitation on a substrate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Gas phase formation of phenalene via 10π-aromatic, resonantly stabilized free radical intermediates

For the last few decades, the Hydrogen-Abstraction/aCetylene-Addition (HACA) mechanism has been fundamental in aiding our understanding of the source of polycyclic aromatic hydrocarbons (PAHs) in combustion processes and in circumstellar envelopes of carbon rich stars. However, the reaction mechanisms driving high temperature molecular mass growth beyond triphenylene (C 18 H 12 ) along with the link between PAHs and graphene-type nanostructures as identified in carbonaceous meteorites such as in Murchison and Allende has remained elusive. By exploring the reaction of the 1-naphthyl radical (C 10 H 7 ˙) with methylacetylene (CH 3 CCH) and allene (H 2 CCCH 2 ) under conditions prevalent in carbon-rich circumstellar environments and combustion systems, we provide compelling evidence on a facile formation of 1H-phenalene (C 13 H 10 ) – the central molecular building block of graphene-type nanostructures. Beyond PAHs, molecular mass growth processes from 1H-phenalene via ring-annulation through C3 molecular building blocks may ultimately lead to two-dimensional structures such as graphene nano flakes and after condensation of multiple layers to graphitized carbon. Furthermore, these fundamental reaction mechanisms are of crucial significance to facilitate an understanding of the origin and chemical evolution of carbon in our Galaxy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Source record↗

Growth chemistry of cobalt nitride by plasma enhanced atomic layer deposition

State-of-the-art atomic layer deposition (ALD) and photoemission characterisation are applied to grow and characterise cobalt nitride, a material that has applications in renewable energy and semiconductor technologies. The growth process is characterised using an in situ cycle-by-cycle methodology to identify the main factors which underpin optimal material growth. The role of co-reactant dosing and substrate temperature is analysed in detail to demonstrate the impact these parameters have on the overall composition of the film. The in situ approach, combined with high-energy synchrotron-based photoemission studies of the resulting films, enables understanding of the bulk chemical properties without need for physical removal of material by sputtering. The results provide an insight into optimising plasma assisted ALD processes for deposition of cobalt nitride, and strategies for minimizing carbon incorporation into the film from the precursor ligands.

36 MATERIALS SCIENCE↗

Experimental Observations of Mechanisms of Pattern Formation During Freeze Casting

Empirically, many different materials compositions have been freeze cast over the years. Few have been analyzed to better understand the mechanisms by which the ice crystal growth drives structure formation, particularly the substructures on the cell walls. Collating substructural features, for example, ridges, bridges, and “jellyfish-like” substructures, found on the cell walls of freeze-cast ceramics (platelets versus particles), fibrillated biopolymers (collagen, nanocellulose), and "smooth" biopolymers (chitosan, trehalose), we capture the ice crystal growth process and analyze it both in situ in 2D and "post-mortem" in 3D to gain insights into anisotropic ice crystal growth and other self-assembly mechanisms. Combining these experimental observations with 3D Phase-field simulations of structure formation in ice-templated materials, detailed in a companion presentation, it becomes possible to gain fundamental science insights and to obtain the desired structure-property-processing correlations not only at the more traditional macroscopic, but also at the meso- and microscopic scales.

Kaiyang Yin↗

Experimental Observations of Mechanisms of Pattern Formation During Freeze Casting

Empirically, many different materials compositions have been freeze cast over the years. Few have been analyzed to better understand the mechanisms by which the ice crystal growth drives structure formation, particularly the substructures on the cell walls. Collating substructural features, for example, ridges, bridges, and “jellyfish-like” substructures, found on the cell walls of freeze-cast ceramics (platelets versus particles), fibrillated biopolymers (collagen, nanocellulose), and "smooth" biopolymers (chitosan, trehalose), we capture the ice crystal growth process and analyze it both in situ in 2D and "post-mortem" in 3D to gain insights into anisotropic ice crystal growth and other self-assembly mechanisms. Combining these experimental observations with 3D Phase-field simulations of structure formation in ice-templated materials, detailed in a companion presentation, it becomes possible to gain fundamental science insights and to obtain the desired structure-property-processing correlations not only at the more traditional macroscopic, but also at the meso- and microscopic scales.

Kaiyan Yin↗

Non-Equilibrium in a Dust-Forming Low-Temperature Plasma: A CARS Study

Dust-forming low-temperature plasmas are versatile systems for the production of nanoparticles with tunable functionalities. While attractive from a materials processing point of view, these systems are inherently complex, with several plasma-induced phenomena determining the properties of the produced materials. Here, we characterize a carbon nanoparticle-forming plasma using coherent anti-Stokes Raman spectroscopy (CARS), with the primary goal of measuring gas temperature. While gas temperature is typically assumed to be at or slightly above room temperature in these reactors, we measure gas temperatures exceeding 1000 K under typical process conditions. We find a correlation between the gas temperature and the nanoparticle yield, suggesting that the particle nucleation and growth process releases energy within the reaction volume, leading to significant gas heating. In addition, we find that the relaxation of vibrationally excited species at the particle surfaces is a major contributor to their heating. In conclusion, these results underscore the complexity of these systems and the need for their more in-depth characterization using advanced techniques such as CARS.

Basic Plasma Phenomena and Gas Discharges↗

Size distribution of dust grains: A problem of self-similarity

Distribution functions describing the results of natural processes frequently show the shape of power laws, e.g., mass functions of stars and molecular clouds, velocity spectrum of turbulence, size distributions of asteroids, micrometeorites and also interstellar dust grains. It is an open question whether this behavior is a result simply coming about by the chosen mathematical representation of the observational data or reflects a deep-seated principle of nature. The authors suppose the latter being the case. Using a dust model consisting of silicate and graphite grains Mathis et al. (1977) showed that the interstellar extinction curve can be represented by taking a grain radii distribution of power law type n(a) varies as a(exp -p) with 3.3 less than or equal to p less than or equal to 3.6 (example 1) as a basis. A different approach to understanding power laws like that in example 1 becomes possible by the theory of self-similar processes (scale invariance). The beta model of turbulence (Frisch et al., 1978) leads in an elementary way to the concept of the self-similarity dimension D, a special case of Mandelbrot's (1977) fractal dimension. In the frame of this beta model, it is supposed that on each stage of a cascade the system decays to N clumps and that only the portion beta N remains active further on. An important feature of this model is that the active eddies become less and less space-filling. In the following, the authors assume that grain-grain collisions are such a scale-invarient process and that the remaining grains are the inactive (frozen) clumps of the cascade. In this way, a size distribution n(a) da varies as a(exp -(D+1))da (example 2) results. It seems to be highly probable that the power law character of the size distribution of interstellar dust grains is the result of a self-similarity process. We can, however, not exclude that the process leading to the interstellar grain size distribution is not fragmentation at all. It could be, e.g., diffusion-limited growth discussed by Sander (1986), who applied the theory of fractal geometry to the classification of non-equilibrium growth processes. He received D=2.4 for diffusion-limited aggregation in 3d-space.

Henning, TH.↗

Solution Growth of Crystals in Zero-Gravity

In a low-g environment, buoyancy driven convection effects in solution crystal growth are greatly reduced and, thus, one can study diffusion mass transport which in 1-g is masked by convective phenomena. Crystals of triglycine sulfate (TGS) will be grown aboard the Spacelab 3 mission, using a specially developed Fluids Experiments System (FES). The objectives of the experiment are: (1) to develop a technique for solution crystal growth in a low-g environment, (2) to characterize the growth environment provided by an orbiting spacecraft and to determine the influence of the environment on the growth behavior, and (3) to determine how gravity in a low-gravity environment influences the properties of a resulting TGS crystal. Single crystals of TGS have been grown using conventional low-temperature solution crystal growth method and the growth process has been extensively characterized. Various physical properties of TGS solution have been measured. Also, a unique technique of growing solution growth crystals by extracting heat at a programmed rate from the crystal through a semi-insulating sting has been developed and tested in 1-g environment.

Lal, R. B.↗

Protein crystal growth in low gravity

The mechanisms involved in protein crystallization and those parameters which influence the growth process and crystalline perfection were studied. The analysis of the flows around growing crystals is detailed. The preliminary study of the growth of isocitrate lyase and the crystal morphologies found are discussed. Preliminary results of controlled nucleation studies are presented.

Feigelson, Robert S.↗

Reduce fluid experiment system flight data from IML-1

Processing and data reduction of holographic images from Spacelab presents some interesting challenges in determining the effects of microgravity on crystal growth processes. Evaluation of several processing techniques, including the Computerized Holographic Image Processing System and the Software Development Package (SDP151) will provide fundamental information for holographic and schlieren analysis of the space flight data.

Workman, Gary L.↗

Reliability Growth Modeling and Testing

Reliability growth has been modelled as an exponential decline in the cumulative failure rate that continues indefinitely as long as testing continues. Contrary to this, most reliability growth data show a brief high initial failure rate due to infant mortality followed by a long period of constant low failure rate. A two part failure rate model with an initial exponential decline followed by a constant failure rate usually fits the data and provides a more realistic description of reliability growth. The reliability growth process consists of testing, experiencing failures, finding the failure causes, and redesigning the system to remove them. The cost of reliability growth increases with the number of inherent failure modes and the time needed for them to occur and be removed. The failure modes with the lower failure rates will tend to occur later, as their Mean Time Before Failure (MTBF) is the inverse of the failure rate. Reliability growth testing has diminishing returns, since it takes longer to find and remove the less probable failures.This paper first discusses the reliability bathtub curve and then explains that reliability growth is produced by testing, identifying failure causes, and designing to remove them. A simple model of reliability growth is introduced, with a brief group of early failures followed by a constant failure rate. The cumulative failure rate n(t)/t can decline as rapidly as1/t or t-1butdeclines more slowly if additiona lfailures occur. The 56-failure Crow data seti s used to demonstrate the two-phase model of reliability growth followed by a constant failure rate. 13 additional data sets are modeled, with 9 of the 14 data sets showing reliability growth approximately as n(t)/t =1/t or t-1and substantial final failure rates. The model fits most of the data sets, but 4of the 14 show no reliability growth. The reliability growth period typically includes six failures and extends one-quarter or half the total test time. As reliability growth testing continues, the cumulative failure rate should be tracked to estimate the reliability growth exponent and the final failure rate.

reliability growth modeling↗

Modeling Reliability Growth

Reliability growth has been modelled as an exponential decline in the cumulative failure rate that continues indefinitely as long as testing continues. Contrary to this, most reliability growth data show a brief high initial failure rate due to infant mortality followed by a long period of constant low failure rate. A two part failure rate model with an initial exponential decline followed by a constant failure rate usually fits the data and provides a more realistic description of reliability growth. The reliability growth process consists of testing, experiencing failures, finding the failure causes, and redesigning the system to remove them. The cost of reliability growth increases with the number of inherent failure modes and the time needed for them to occur and be removed. The failure modes with the lower failure rates will tend to occur later, as their Mean Time Before Failure (MTBF) is the inverse of the failure rate. Reliability growth testing has diminishing returns, since it takes longer to find and remove the less probable failures.This paper first discusses the reliability bathtub curve and then explains that reliability growth is produced by testing, identifying failure causes, and designing to remove them. A simple model of reliability growth is introduced, with a brief group of early failures followed by a constant failure rate. The cumulative failure rate n(t)/t can decline as rapidly as1/t or t-1butdeclines more slowly if additiona lfailures occur. The 56-failure Crow data seti s used to demonstrate the two-phase model of reliability growth followed by a constant failure rate. 13 additional data sets are modeled, with 9 of the 14 data sets showing reliability growth approximately as n(t)/t =1/t or t-1and substantial final failure rates. The model fits most of the data sets, but 4of the 14 show no reliability growth. The reliability growth period typically includes six failures and extends one-quarter or half the total test time. As reliability growth testing continues, the cumulative failure rate should be tracked to estimate the reliability growth exponent and the final failure rate.

reliability growth modeling↗