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DOE OSTI2023

Tailoring Mid–Gap States of Chalcogenide Glass by Pressure–Induced Hypervalent Bonding Towards the Design of Electrical Switching Materials

Phase change memory (PCM) and ovonic threshold switching (OTS) materials using chalcogenide glass are essential elements in advanced 3D memory chips. The mid–gap states, induced by the disorder and defects in the glass, are the physical mechanisms of the electrical switching behavior, while the origin of these trap states is still under debate and the medium–range clusters that break the global octet rule, such as over–coordinated atoms, are known to be responsible in various glass. Here, it is discovered that a large fraction of over–coordinated clusters fails to generate mid–gap states, which are probably caused by hypervalent bonding, a multi–centered covalent bond participated by delocalized lone–pair electrons. This is confirmed by the pressure–driven simulations of amorphous GeSe models, in which it is found that octahedral motifs and hypervalent bonds prevent the over–coordinated medium–range clusters from providing excessive electrons. In practical applications, compatible dopants can be used to change the number of hypervalent bonds, thus controlling the number of mid–gap states and consequently the performance of PCM and OTS materials. Finally, these results reveal the origin of mid–gap states in chalcogenide glasses, enabling extensive control in the development of pioneering electrical switching materials.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Evolution of the Electronic Gap of Directly Synthesized Versus Mechanically Transferred WS 2 Monolayer to Multilayer Films

The electronic properties of 2D materials play a critical role in determining their potential for device applications. Despite rapid developments in 2D semiconductors, studies of fundamental electronic parameters, including the electronic gap and ionization energy, are limited, with significant discrepancies in reported values. The study focuses on tungsten disulfide (WS₂) and investigates the electronic structure of films comprising an increasing number of layers deposited with two different methods: direct synthesis via metal–organic chemical vapor deposition (MOCVD) and additive mechanical transfer of exfoliated single layers. The films are characterized via Raman, UV–vis, and photoluminescence spectroscopies, as well as ultraviolet photoelectron and inverse photoemission spectroscopies (UPS/IPES). The electronic gap of WS₂ is found to decrease from 2.43 eV for the monolayer to 1.97 eV for the trilayer, indicating a bulk transition at the trilayer thickness. This reduction in the electronic gap is primarily due to the downward shift of the conduction band minimum relative to the valence band maximum. A comparative analysis with MOCVD-grown WS₂ reveals a slightly larger electronic gap for MOCVD-grown samples, attributed to differences in defect densities. The electronic levels evaluated through UPS/IPES highlight the significant influence of preparation methods on the electronic properties of WS₂.

2D materials↗

DOE OSTI2026

Impact of Fermentation-Derived Substrates on Hydrogen Production in Zero-Gap Microbial Electrolysis Cells

Zero-gap microbial electrolysis cells (MECs) represent a promising platform for hydrogen production from liquid waste streams due to reduced interelectrode spacing that lowers internal resistance and enhances mass transport. However, the performance and stability of zero-gap MECs treating chemically complex feedstocks remain insufficiently characterized. Here, we operated zero-gap MECs with real, unamended, corn stover dark fermentation effluent containing a wide range of organic substrates. The MECs fed fermentation effluent achieved a maximum current density of 24 A/m2 (15+-6 A/m2 over the cycle) and a hydrogen production rate of 75 L/L-d (42+-19 L/L-d over the cycle). The substrates were consumed at different rates, indicating substrate-selective utilization by the anodic microbial community. Acetate supported high and stable current generation, whereas ethanol, formate, lactate, and amino acids induced varying degrees of inhibition depending on their concentration. Residual sugars caused pronounced current fluctuations, consistent with ongoing fermentation and local pH changes. A diverse microbial community was crucial for efficiently utilizing complex organics and maximizing electrochemical performance. These results demonstrate how and to what extent substrate composition regulates zero-gap MEC performance and that microbial community and operational conditions can be leveraged to enhance performance. These novel findings provide practical guidance for achieving robust hydrogen recovery from chemically heterogeneous real liquid waste streams.

08 HYDROGEN↗

DOE OSTI2020

Severe Dirac Mass Gap Suppression in Sb 2 Te 3 -Based Quantum Anomalous Hall Materials

The quantum anomalous Hall (QAH) effect appears in ferromagnetic topological insulators (FMTIs) when a Dirac mass gap opens in the spectrum of the topological surface states (SSs). Unaccountably, although the mean mass gap can exceed 28 meV (or ~320 K), the QAH effect is frequently only detectable at temperatures below 1 K. Using atomic-resolution Landau level spectroscopic imaging, we compare the electronic structure of the archetypal FMTI Cr 0.08 (Bi 0.1 Sb 0.9 ) 1.92 Te 3 to that of its nonmagnetic parent (Bi 0.1 Sb 0.9 ) 2 Te 3 , to explore the cause. In (Bi 0.1 Sb 0.9 ) 2 Te 3 , we find spatially random variations of the Dirac energy. Statistically equivalent Dirac energy variations are detected in Cr 0.08 (Bi 0.1 Sb 0.9 ) 1.92 Te 3 with concurrent but uncorrelated Dirac mass gap disorder. Additionally, these two classes of SS electronic disorder conspire to drastically suppress the minimum mass gap to below 100 μeV for nanoscale regions separated by <1 μm. This fundamentally limits the fully quantized anomalous Hall effect in Sb 2 Te 3 -based FMTI materials to very low temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Robust Spin-Moiré-Superlattice-Driven Gap Opening in EuAg 4 Sb 2 under in-Plane Magnetic Field

Moiré superlattices introduce new length and energy scales, enabling discoveries, such as unconventional superconductivity, in 2D systems. This concept has recently been extended to bulk materials with multiple-q spin textures, opening exciting opportunities for spin moiré physics. A notable example is EuAg 4 S b2 , where a spin moiré superlattice (SMS), manifested as a double-q spin modulation, induces a superzone gap opening. In this work, we investigate the tunability of this gap by an in-plane magnetic field in EuAg 4 Sb 2 by using neutron scattering, magnetization, and transport measurements. We reveal a cycloidal ground state and multiple spin-reoriented phases induced by the in-plane field, highlighting the critical role of in-plane components in driving magnetic transitions. Moreover, we demonstrate that a robust gap opening persists in the double-q phase, regardless of in-plane field orientation. Model calculations attribute this robustness to the stability of the SMS under tilted fields. Here, our results establish EuAg 4 Sb 2 as a tunable platform for exploring the spin-texture-driven superzone gap opening in electronic states.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Computational Insights into Phase Equilibria Between Wide-Gap Semiconductors and Contact Materials

Novel wide-band-gap semiconductors are needed for next-generation power electronics, but there is a gap between a promising material and a functional device. Finding stable (metal) contacts is one of the major challenges that is currently dealt with mainly via trial and error. Herein, we computationally investigate the thermochemistry and phase coexistence at the junction between three wide-gap semiconductors, ..beta..-Ga2O3, GeO2, and GaN, and possible contact materials. The pool of possible contacts includes 47 elemental metals and a set of 4 common, n-type transparent conducting oxides (ZnO, TiO2, SnO2, and In2O3). We use first-principles thermodynamics to model the Gibbs free energies of chemical reactions as a function of gas pressure (pO2/pN2) and equilibrium temperature. We deduce whether a semiconductor/contact interface will be stable at relevant conditions or a chemical reaction between them is to be expected, possibly influencing the long-term reliability and performance of devices. We generally find that most elemental metals tend to oxidize or nitridize and form various interface oxide/nitride layers. Exceptions include select late- and post-transition metals and, in the case of GaN, also the alkali metals, which are predicted to exhibit stable coexistence, although in many cases at relatively low gas partial pressures. Similar is true for the transparent conducting oxides, for which, in most cases, we predict a preference toward forming ternary oxides when in contact with ..beta..-Ga2O3 and GeO2. The only exception is SnO2, which we find to form stable contacts with both oxides. Finally, we show how the same approach can be used to predict gas partial pressure vs temperature phase diagrams to help direct synthesis of ternary compounds. We believe these results provide a valuable guidance in selecting contact materials to wide-gap semiconductors and suitable growth conditions.

contact materials↗

DOE OSTI2026

Spin Texture Control and Magnetic Gap Engineering in a Ferromagnetic Insulator–Topological Insulator Sandwiched Heterostructure

Quantum materials that combine magnetism with topological order are emerging as key platforms for next-generation spintronics and low-energy electronics. They enable the realization of emergent quantum phenomena, such as the quantum anomalous Hall effect and axion insulator states. The ferromagnetic insulator (FMI)/topological insulator (TI)/FMI sandwich structure of a single-septuple layer (1SL) MnBi 2 Te 4 /four-quintuple layer (4QL) Bi 2 Te 3 /1SL MnBi 2 Te 4 holds great potential to achieve such desirable quantum phenomena at an elevated temperature, owing to its large Dirac point band gap and high Curie temperature. Here, for this work, spin- and angle-resolved photoemission spectroscopy (spin-ARPES) is employed to directly verify that the band gap arises from broken time-reversal symmetry via proximity-driven magnetization. This study demonstrates direct control of the spin state via external magnetic fields and unambiguously confirms the exchange interaction as the gap-opening mechanism. The robust magnetic gap and controllable spin texture make this heterostructure a suitable candidate for spintronic applications and magnetic topological quantum phases.

exchange gap↗

DOE OSTI2022

Tunable band gaps and optical absorption properties of bent MoS2 nanoribbons

Abstract The large tunability of band gaps and optical absorptions of armchair MoS 2 nanoribbons of different widths under bending is studied using density functional theory and many-body perturbation GW and Bethe–Salpeter equation approaches. We find that there are three critical bending curvatures, and the non-edge and edge band gaps generally show a non-monotonic trend with bending. The non-degenerate edge gap splits show an oscillating feature with ribbon width n , with a period $$\Delta n=3$$ Δ n = 3 , due to quantum confinement effects. The complex strain patterns on the bent nanoribbons control the varying features of band structures and band gaps that result in varying exciton formations and optical properties. The binding energy and the spin singlet–triplet split of the exciton forming the lowest absorption peak generally decrease with bending curvatures. The large tunability of optical properties of bent MoS 2 nanoribbons is promising and will find applications in tunable optoelectronic nanodevices.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Electronic energy gap closure and metal-insulator transition in dense liquid hydrogen

Here, using quantum Monte Carlo (QMC) calculations, we investigate the insulator-metal transition observed in liquid hydrogen at high pressure. Below the critical temperature of the transition from the molecular to the atomic liquid, the fundamental electronic gap closure occurs abruptly, with a small discontinuity reflecting the weak first-order transition in the thermodynamic equation of state. Above the critical temperature, molecular dissociation sets in while the gap is still open. When the gap closes, the decay of the off-diagonal reduced density matrix shows that the liquid enters a gapless, but localized, phase: there is a crossover between the insulating and the metallic liquids. Compared to different density functional theory (DFT) functionals, our QMC calculations provide larger values for the fundamental gap and the electronic density of states close to the band edges, indicating that optical properties from DFT potentially benefit from error cancellations.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Renormalization-group approach to Kohn-Luttinger superconductivity: Amplification of the pairing gap from ℓ 4 to ℓ

Here, we revisit the renormalization group (RG) analysis of the Kohn-Luttinger (KL) mechanism for superconductivity. The KL mechanism leads to superconductivity in a system with a repulsive bare interaction. The key ingredient is the screening effect that renders the induced interaction attractive in channels with nonzero angular momentum ℓ ≠ 0, thereby triggering the Bardeen-Cooper-Schrieffer (BCS) instability. According to the original argument, the resulting gap is exponentially small, with its exponent scaling as −ℓ 4 . However, the KL mechanism was originally formulated within perturbation theory, where the series is known to converge poorly in certain cases—most notably, for the 𝑝-wave paring gap induced by a repulsive 𝑠-wave contact interaction. This poor convergence may be attributed to a divergent integrand in a specific class of diagrams containing both the BCS logarithm and the Kohn anomaly, suggesting that one must resum the Kohn anomaly contributions separately from the BCS logarithm. In this work, we incorporate the Kohn anomaly contribution into the 𝛽 function of the RG equation governing the BCS instability near the Fermi surface. Our solution shows that the KL gap exponent is then proportional to −ℓ, indicating a significant enhancement of the KL mechanism beyond the previously known result. To illustrate this, we study the spin-triplet 𝑝-wave pairing gap arising from a repulsive 𝑠-wave contact interaction and compare our RG-based results with those obtained from the Bethe-Salpeter equation in perturbation theory.

nuclear matter in neutron stars↗

DOE OSTI2024

Tunneling Spectroscopy at Megabar Pressures: Determination of the Superconducting Gap in Sulfur

The recent discovery of high-temperature, high-pressure superconductors, such as hydrides and nickelates, has opened exciting avenues in studying high-temperature superconductivity. The primary superconducting properties of these materials are well characterized by measuring various electrical and magnetic properties, despite the challenges posed by the high-pressure environment. Experimental microscopic insight into the pairing mechanism of these superconductors is even more challenging, due to the lack of direct probes of the superconducting gap structures at high pressure conditions. Here, we have developed a planar tunnel junction technique for diamond anvil cells and present ground-breaking tunneling spectroscopy measurements at megabar pressures. We determined the superconducting gap of elemental sulfur at 160 GPa, a key constituent of the high-temperature superconductor H 3 S . High quality tunneling spectra indicate that β -Po phase sulfur is a type II superconductor with a single s -wave gap with a gap value 2 Δ ( 0 ) = 5.6 meV . This technique is compatible with superconducting compounds synthesized in diamond anvil cells and provides insight into the pairing mechanism in novel superconductors under high-pressure conditions. Published by the American Physical Society 2024

36 MATERIALS SCIENCE↗

DOE OSTI2021

Assessing biogeographic survey gaps in bacterial diversity knowledge: A global synthesis of freshwaters

Freshwaters account for 0.8% of Earth's surface area, yet support >10% of known plant and animal species making them disproportionately biodiverse. Modern molecular techniques have begun to reveal microbial diversity, but application of these approaches to address global microbial biogeography is relatively unknown in freshwaters. Our aim was to identify gaps in microbial data coverage along climatic and landscape disturbance gradients and among terrestrial biomes and hydrographic regions for all freshwater ecosystems and three freshwater habitat types: lakes and reservoirs (lentic); streams and rivers (lotic); and wetlands. We reviewed literature on microbial diversity in freshwaters surveyed using 16S ribosomal RNA sequencing which identify microbial taxa. We georeferenced survey locations and used a geographic information system to identify and map gaps in survey coverage using open-source data for climate, landscape disturbance, terrestrial biomes, and freshwater ecoregions. In our study, we compiled 3,425 georeferenced survey locations reported from 963 studies. Streams were surveyed most frequently (60.8% of survey locations), followed by lakes (33.5%) and wetlands (5.6%). Surveys were concentrated in North America, central and western Europe, and Southeast Asia; 35% of freshwater ecoregions were surveyed at least once across freshwater habitat types, whereas 23%, 23%, and 12% were surveyed at least once for lentic, lotic, and wetland habitat types, respectively. The climatic gap analysis indicated coverage is high for temperate regions but lacking in the tropics and Arctic, particularly for wetland ecosystems. Our assessment revealed high climatic coverage of freshwater microbial diversity knowledge, but expansive ecoregional gaps attributable to biased sampling near research institutions in North America, western Europe, and China. Future surveys should target ecoregions in Africa, South America, Central Asia, Australia, and Antarctica. An essential next step will be to curate and disseminate sequencing efforts to facilitate the study of processes driving global diversity patterns.

16S rRNA↗

DOE OSTI2022

Machine Learning Assisted Gap-Filled Discharge Data for the East River Community Watershed, Colorado, for Water Years 2014-2021

This dataset contains a collection of machine learning assisted gap-filled discharge data created for all discharge stations across the East River Watershed, Colorado. This data was generated by using raw discharge data collected by Rosemary Carroll, and conducting a random forest machine learning analysis to gap-fill discharge data across all years at the hourly time level. Discharge data with gaps creates problems for analysis of measured and modeled fluxes of carbon and nitrogen exported out of each sub-watershed. Gap-filled data is also required as an input to surface water models, which helps to address our main research question related to how snowmelt timing impacts the timing and magnitude of nitrogen exports. Data is provided in one csv file.

54 ENVIRONMENTAL SCIENCES↗

NASA NTRS2003

Activation of L-type calcium channels is required for gap junction-mediated intercellular calcium signaling in osteoblastic cells

The propagation of mechanically induced intercellular calcium waves (ICW) among osteoblastic cells occurs both by activation of P2Y (purinergic) receptors by extracellular nucleotides, resulting in "fast" ICW, and by gap junctional communication in cells that express connexin43 (Cx43), resulting in "slow" ICW. Human osteoblastic cells transmit intercellular calcium signals by both of these mechanisms. In the current studies we have examined the mechanism of slow gap junction-dependent ICW in osteoblastic cells. In ROS rat osteoblastic cells, gap junction-dependent ICW were inhibited by removal of extracellular calcium, plasma membrane depolarization by high extracellular potassium, and the L-type voltage-operated calcium channel inhibitor, nifedipine. In contrast, all these treatments enhanced the spread of P2 receptor-mediated ICW in UMR rat osteoblastic cells. Using UMR cells transfected to express Cx43 (UMR/Cx43) we confirmed that nifedipine sensitivity of ICW required Cx43 expression. In human osteoblastic cells, gap junction-dependent ICW also required activation of L-type calcium channels and influx of extracellular calcium.

Non-NASA Center↗

NASA NTRS2001

Osmotic forces and gap junctions in spreading depression: a computational model

In a computational model of spreading depression (SD), ionic movement through a neuronal syncytium of cells connected by gap junctions is described electrodiffusively. Simulations predict that SD will not occur unless cells are allowed to expand in response to osmotic pressure gradients and K+ is allowed to move through gap junctions. SD waves of [K+]out approximately 25 to approximately 60 mM moving at approximately 2 to approximately 18 mm/min are predicted over the range of parametric values reported in gray matter, with extracellular space decreasing up to approximately 50%. Predicted waveform shape is qualitatively similar to laboratory reports. The delayed-rectifier, NMDA, BK, and Na+ currents are predicted to facilitate SD, while SK and A-type K+ currents and glial activity impede SD. These predictions are consonant with recent findings that gap junction poisons block SD and support the theories that cytosolic diffusion via gap junctions and osmotic forces are important mechanisms underlying SD.

Spreading Cortical Depression/physiology↗

NASA NTRS1998

Electrical signal transmission in a bone cell network: the influence of a discrete gap junction

A refined electrical cable model is formulated to investigate the role of a discrete gap junction in the intracellular transmission of electrical signals in an electrically coupled system of osteocytes and osteoblasts in an osteon. The model also examines the influence of the ratio q between the membrane's electrical time constant and the characteristic time of pore fluid pressure, the circular, cylindrical geometry of the osteon, and key simplifying assumptions in our earlier continuous cable model (see Zhang, D., S. C. Cowin, and S. Weinbaum. Electrical signal transmission and gap junction regulation in a bone cell network: A cable model for an osteon. Ann. Biomed. Eng. 25:379-396, 1997). Using this refined model, it is shown that (1) the intracellular potential amplitude at the osteoblastic end of the osteonal cable retains the character of a combination of a low-pass and a high-pass filter as the corner frequency varies in the physiological range; (2) the presence of a discrete gap junction near a resting osteoblast can lead to significant modulation of the intracellular potential and current in the osteoblast for measured values of the gap junction coupling strength; and (3) the circular, cylindrical geometry of the osteon is well simulated by the beam analogy used in Zhang et al.

Non-NASA Center↗

DOE OSTI2022

Tuning Intermediate Bands of Protective Coatings to Reach the Bulk-Recombination Limit of Stable Water-Oxidation GaP Photoanodes

Stable photoelectrochemical solar fuel production requires protective coatings to achieve effective charge separation, transport, and injection at the semiconductor–liquid interfaces, implying that the coating should energetically align its intermediate band (IB) with both the photoabsorber's band edge and co-catalyst's potentials. Yet approaches to adjust coating IB positions to accommodate various semiconductor light absorbers for constructing efficient and stable photoelectrodes have not been developed. In this report, three types of transition metal (M = Mn 2+ , Mn 3+ , and Cr 3+ ions) alloyed TiO2 coatings are discovered using atomic layer deposition (ALD). The IB energetics of these coatings are characterized by X-ray photoelectron spectroscopy and are found to be tunable inside the TiO 2 bandgap, through varying ALD growth conditions. By applying these coatings to n-type GaP and integrating with IrO x co-catalysts, the water-oxidation J–E performance is comparable to an uncoated corroding GaP photoanode. It reaches the bulk recombination limit of the GaP and achieves ≈28% absorbed photon to current efficiency under 475-nm light excitation (6.48 mW cm -2 ) and 100-h stable water oxidation. The outstanding performance and stability are attributed to the efficient charge separation and hole transport, as allowed by the energy alignment of the coating IB and the GaP valence band edge.

36 MATERIALS SCIENCE↗

DOE OSTI2023

Study of gapped phases of 4d gauge theories using temporal gauging of the ℤN 1-form symmetry

To study gapped phases of 4d gauge theories, we introduce the temporal gauging of Z N 1-form symmetry in 4d quantum field theories (QFTs), thereby defining effective 3d QFTs with $\tilde{Z}_N$ × Z N 1-form symmetry. In this way, spatial fundamental Wilson and ’t Hooft loops are simultaneously genuine line operators. Assuming a mass gap and Lorentz invariant vacuum of the 4d QFT, the $\tilde{Z}_N$ × Z N symmetry must be spontaneously broken to an order-N subgroup H, and we can classify the 4d gapped phases by specifying H. This establishes the 1-to-1 correspondence between the two classification schemes for gapped phases of 4d gauge theories: one is the conventional Wilson-’t Hooft classification, and the other is the modern classification using the spontaneous breaking of 4d 1-form symmetry enriched with symmetry-protected topological states.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗