Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “flexible electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 199 records · Page 11

Large-area single-crystal sheets of borophene on Cu(111) surfaces

Borophene, a theoretically proposed two-dimensional (2D) boron allotrope has attracted much attention as a candidate material platform for high-speed, transparent and flexible electronics. It was recently synthesized, on Ag(111) substrates and studied by tunneling and electron spectroscopy. However, the exact crystal structure is still controversial, the nanometre-size single-crystal domains produced so far are too small for device fabrication and the structural tunability via substrate-dependent epitaxy is yet to be proven. We report on the synthesis of borophene monitored in situ by low-energy electron microscopy, diffraction and scanning tunnelling microscopy (STM) and modelled by ab initio theory. We resolved the crystal structure and phase diagram of borophene on Ag(111), but found that the domains remain nanoscale for all growth conditions. However, by growing borophene on Cu(111) surfaces, we obtained large single-crystal domains, up to 100 μm 2 in size. The crystal structure is a novel triangular network with a concentration of hexagonal vacancies of η = 1/5. Our experimental data, together with first principles calculations, indicate charge-transfer coupling to the substrate without significant covalent bonding. Lastly, our work sets the stage for fabricating borophene-based devices and substantiates the idea of borophene as a model for development of artificial 2D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Intrinsic glassy-metallic transport in an amorphous coordination polymer

Conducting organic materials, such as doped organic polymers, molecular conductors and emerging coordination polymers4, underpin technologies ranging from displays to flexible electronics. Realizing high electrical conductivity in traditionally insulating organic materials necessitates tuning their electronic structure through chemical doping6. Furthermore, even organic materials that are intrinsically conductive, such as single-component molecular conductors, require crystallinity for metallic behavior. However, conducting polymers are often amorphous to aid durability and processability. Using molecular design to produce high conductivity in undoped amorphous materials would enable tunable and robust conductivity in many applications, but there are no intrinsically conducting organic materials that maintain high conductivity when disordered. Here we report an amorphous coordination polymer, Ni tetrathiafulvalene tetrathiolate, which displays markedly high electronic conductivity (up to 1,200 S cm –1 ) and intrinsic glassy-metallic behavior. Theory shows that these properties are enabled by molecular overlap that is robust to structural perturbations. This unusual set of features results in high conductivity that is stable to humid air for weeks, pH 0–14 and temperatures up to 140 °C. Furthermore, these findings demonstrate that molecular design can enable metallic conductivity even in heavily disordered materials, raising fundamental questions about how metallic transport can exist without periodic structure and indicating exciting new applications for these materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Multi-mode humidity sensing with water-soluble copper phthalocyanine for increased sensitivity and dynamic range

Aqueous solubility of copper phthalocyanine-3,4',4',4"'-tetrasulfonic acid tetrasodium salt (CuPcTs) enables fabrication of flexible electronic devices by low cost inkjet printing. We (1) investigate water adsorption kinetics on CuPcTs for better understanding the effects of relative humidity (RH) on hydrophilic phthalocyanines, and (2) assess CuPcTs as a humidity-sensing material. Reaction models show that H 2 O undergoes 2-site adsorption which can be represented by a pair of sequentially-occurring pseudo-first order reactions. Using high frequency (300–700 THz) and low frequency (1–8 MHz) dielectric spectroscopy combined with gravimetric measurements and principal component analysis, we observe that significant opto-electrical changes in CuPcTs occur at RH ≈ 60%. The results suggest that rapid H 2 O adsorption takes place at hydrophilic sulfonyl/salt groups on domain surfaces at low RH, while slow adsorption and diffusion of H 2 O into CuPcTs crystallites leads to a mixed CuPcTs-H 2 O phase at RH > 60%, resulting in high frequency dielectric screening of the film by water and dissociation of Na+ from CuPc(SO 3 -) 4 ions. Lastly, the CuPcTs-H 2 O interaction can be tracked using a combination of gravimetric, optical, and electrical sensing modes, enabling accurate ( ± 2.5%) sensing in the ~0–95% RH range with a detection limit of less than 0.1% RH.

36 MATERIALS SCIENCE↗

Scalable ultrafast epitaxy of large-grain and single-crystal II-VI semiconductors

A general problem for semiconductor applications is that very slow deposition on expensive single-crystal substrates yields high crystalline quality with excellent electro-optical properties, but at prohibitive costs and throughput for many applications. In contrast, rapid deposition on inexpensive substrates or nanocrystalline films yields low costs, but comparatively inferior crystallinity, carrier transport, and recombination. Here, we present methods to deposit single-crystal material at rates 2-3 orders of magnitude faster than state-of-the-art epitaxy with low-cost methods without compromising crystalline or electro-optical quality. For example, single-crystal CdTe and CdZnTe films that would take several days to grow by molecular-beam epitaxy are deposited in 8 minutes by close-spaced sublimation, yet retain the same crystalline quality measured by X-ray diffraction rocking curves. The fast deposition is coupled with effective n- and p-type in-situ doping by In, P, and As. The epitaxy can be extended to nanocrystalline substrates. For example, we recrystallize thin CdTe films on glass to deposit large grains with low defect density. The results provide new research paths for photovoltaics, detectors, infrared imaging, flexible electronics, and other applications.

14 SOLAR ENERGY↗

Tunable electrical conductivity in oriented thin films of tetrathiafulvalene-based covalent organic framework

Despite the high charge-carrier mobility in covalent organic frameworks (COFs), the low intrinsic conductivity and poor solution processability still impose a great challenge for their applications in flexible electronics. We report the growth of oriented thin films of a tetrathiafulvalene-based COF (TTF-COF) and its tunable doping. The porous structure of the crystalline TTF-COF thin film allows the diffusion of dopants such as I-2 and tetracyanoquinodimethane (TCNQ) for redox reactions, while the closely packed 2D grid sheets facilitate the cross-layer delocalization of thus-formed TTF radical cations to generate more conductive mixed-valence TTF species, as is verified by UV-vis-NIR and electron paramagnetic resonance spectra. Conductivity as high as 0.28 S m(-1) is observed for the doped COF thin films, which is three orders of magnitude higher than that of the pristine film and is among the highest for COF materials.

Cai, SL↗

Defect reduction by liquid phase epitaxy of germanium on single-crystalline-like germanium templates on flexible, low-cost metal substrates

Single-crystalline-like germanium (Ge) templates were demonstrated on low-cost, flexible metal substrates and have been used to fabricate III–V materials and devices for photovoltaics and flexible electronics applications. However, these Ge templates, fabricated by magnetron sputtering or plasma enhanced chemical vapor deposition, contain a high density of defects. In order to improve the performance of optoelectronic devices made using the Ge templates, a homo-epitaxial Ge layer has been additionally grown by a liquid phase epitaxy (LPE) method. The LPE Ge layer is composed of significantly larger grains (~26 μm) compared to that of the Ge template (~200 nm). This large size of the LPE Ge grains effectively reduces the volume fraction of grain boundaries. The LPE Ge shows an out-of-plane texture Δω of ~0.63° and an in-plane texture ΔΦ of ~1.26°, which signify improvements of ~39.3% and ~76.6% compared to that of the vapor-deposited Ge template, respectively. Further, the LPE Ge is strain free, compared to the strained Ge template hetero-epitaxially grown on cerium oxide. Defects caused by low-angle grain boundaries, impurities and strain relaxation in the Ge template are found to be suppressed in the LPE Ge. The threading dislocation density is roughly estimated to be ~5 × 10 6 cm -2 in the LPE Ge compared to ~1 × 10 10 cm -2 in the Ge template.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Flexible GaAs solar cells on roll-to-roll processed epitaxial Ge films on metal foils: a route towards low-cost and high-performance III–V photovoltaics

In this work, we describe a unique roll-to-roll plasma-enhanced chemical vapor deposition (R2R-PECVD) technique to grow high-quality single-crystalline-like Ge films on flexible metal foils, an important advancement towards scalable processing of epitaxial Ge films at low-cost. Ion-beam assisted deposition was used to create single-crystalline-like substrate templates to enable epitaxial growth of Ge films. The Ge films were highly (004) oriented, biaxially-textured and showed remarkable crystalline quality, equivalent to single-crystal Ge wafers. Subsequently, the Ge films on metal foils were used as substrates to fabricate flexible GaAs single-junction solar cell by metal-oxide chemical vapor deposition (MOCVD). The champion device showed efficiency of 11.5%, and the average efficiency of four devices was 8% at 1 sun, the highest reported on GaAs PV directly deposited on alternative flexible substrates. Devices made on CVD-Ge film exhibited significantly improved performance compared to the ones grown on sputtered Ge films. Scalable production of inexpensive and flexible epi-Ge films will not only be useful for developing low-cost and high-performance III–V solar cells, but also for emerging flexible electronic devices applications.

14 SOLAR ENERGY↗

Influence of growth temperature on electrical, optical, and plasmonic properties of aluminum:zinc oxide films grown by radio frequency magnetron sputtering

We have investigated the responsible mechanism for the observation of metallic conductivity at room temperature and metal-semiconductor transition (MST) at lower temperatures for aluminum-doped zinc oxide (AZO) films. AZO films were grown on glass substrates by radio-frequency magnetron sputtering with varying substrate temperatures (T{sub s}). The films were found to be crystalline with the electrical resistivity close to 1.1 × 10{sup −3} Ω cm and transmittance more than 85% in the visible region. The saturated optical band gap of 3.76 eV was observed for the sample grown at T{sub s} of 400 °C, however, a slight decrease in the bandgap was noticed above 400 °C, which can be explained by Burstein–Moss effect. Temperature dependent resistivity measurements of these highly conducting and transparent films showed a MST at ∼110 K. The observed metal-like and metal-semiconductor transitions are explained by taking into account the Mott phase transition and localization effects due to defects. All AZO films demonstrate crossover in permittivity from positive to negative and low loss in the near-infrared region, illustrating its applications for plasmonic metamaterials, including waveguides for near infrared telecommunication region. Based on the results presented in this study, the low electrical resistivity and high optical transmittance of AZO films suggested a possibility for the application in the flexible electronic devices, such as transparent conducting oxide film on LEDs, solar cells, and touch panels.

36 MATERIALS SCIENCE↗

Theoretical and experimental study of the bending influence on the capacitance of interdigitated micro-electrodes patterned on flexible substrates

Interdigitated electrodes are common structures in the fields of microelectronics and MEMS. Recent developments in flexible electronics compel an understanding of such structures under bending constraints. In this work, the behavior of interdigitated micro-electrodes when subjected to circular bending has been theoretically and experimentally studied through changes in capacitance. An analytical model has been developed to calculate the expected variation in capacitance of such structures while undergoing outward and inward bending along the direction perpendicular to the electrodes. The model combines conformal mapping techniques to account for the electric field redistribution and fundamental aspects of solid mechanics in order to define the geometrical deformation of the electrodes while bending. To experimentally verify our theoretical predictions, several interdigitated electrode structures with different geometries were fabricated on polymeric substrates by means of photolithography. The samples, placed in a customized bending setup, were bent to controlled radii of curvature while measuring their capacitance. A maximum variation in capacitance of less than 3% was observed at a minimum radius of curvature of 2.5 mm for all the devices tested with very thin electrodes whereas changes of up to 7% were found on stiffer, plated electrodes. Larger or smaller variations would be possible, in theory, by adjusting the geometry of the device. This work establishes a useful predictive tool for the design and evaluation of truly flexible/bendable electronics consisting of interdigitated structures, allowing one to tune the bending influence on the capacitance value through geometrical design.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Conductivity behavior of very thin gold films ruptured by mass transport in photosensitive polymer film

We report on conductivity behavior of very thin gold layer deposited on a photosensitive polymer film. Under irradiation with light interference pattern, the azobenzene containing photosensitive polymer film undergoes deformation at which topography follows a distribution of intensity, resulting in the formation of a surface relief grating. This process is accompanied by a change in the shape of the polymer surface from flat to sinusoidal together with a corresponding increase in surface area. The gold layer placed above deforms along with the polymer and ruptures at a strain of 4%. The rupturing is spatially well defined, occurring at the topographic maxima and minima resulting in periodic cracks across the whole irradiated area. We have shown that this periodic micro-rupturing of a thin metal film has no significant impact on the electrical conductivity of the films. We suggest a model to explain this phenomenon and support this by additional experiments where the conductivity is measured in a process when a single nanoscopic scratch is formed with an AFM tip. Our results indicate that in flexible electronic materials consisting of a polymer support and an integrated metal circuit, nano- and micro cracks do not alter significantly the behavior of the conductivity unless the metal is disrupted completely.

36 MATERIALS SCIENCE↗

Enhanced performance of wearable piezoelectric nanogenerator fabricated by two-step hydrothermal process

A simple two-step hydrothermal process was proposed for enhancing the performance of the nanogenerator on flexible and wearable terylene-fabric substrate. With this method, a significant enhancement in output voltage of the nanogenerator from ∼10 mV to 7 V was achieved, comparing with the one by conventional one-step process. In addition, another advantage with the devices synthesized by two-step hydrothermal process was that their output voltages are only sensitive to strain rather than strain rate. The devices with a high output voltage have the ability to power common electric devices and will have important applications in flexible electronics and wearable devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Bendable ZnO thin film surface acoustic wave devices on polyethylene terephthalate substrate

Bendable surface acoustic wave (SAW) devices were fabricated using high quality c-axis orientation ZnO films deposited on flexible polyethylene terephthalate substrates at 120 °C. Dual resonance modes, namely, the zero order pseudo asymmetric (A{sub 0}) and symmetric (S{sub 0}) Lamb wave modes, have been obtained from the SAW devices. The SAW devices perform well even after repeated flexion up to 2500 με for 100 times, demonstrating its suitability for flexible electronics application. The SAW devices are also highly sensitive to compressive and tensile strains, exhibiting excellent anti-strain deterioration property, thus, they are particularly suitable for sensing large strains.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Channel cracks in atomic-layer and molecular-layer deposited multilayer thin film coatings

Metal oxide thin film coatings produced by atomic layer deposition have been shown to be an effective permeation barrier. The primary failure mode of such coatings under tensile loads is the propagation of channel cracks that penetrate vertically into the coating films. Recently, multi-layer structures that combine the metal oxide material with relatively soft polymeric layers produced by molecular layer deposition have been proposed to create composite thin films with desired properties, including potentially enhanced resistance to fracture. In this paper, we study the effects of layer geometry and material properties on the critical strain for channel crack propagation in the multi-layer composite films. Using finite element simulations and a thin-film fracture mechanics formalism, we show that if the fracture energy of the polymeric layer is lower than that of the metal oxide layer, the channel crack tends to penetrate through the entire composite film, and dividing the metal oxide and polymeric materials into thinner layers leads to a smaller critical strain. However, if the fracture energy of the polymeric material is high so that cracks only run through the metal oxide layers, more layers can result in a larger critical strain. For intermediate fracture energy of the polymer material, we developed a design map that identifies the optimal structure for given fracture energies and thicknesses of the metal oxide and polymeric layers. These results can facilitate the design of mechanically robust permeation barriers, an important component for the development of flexible electronics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Intrinsic delay of permeable base transistor

Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barrier height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.

36 MATERIALS SCIENCE↗

High temperature study of flexible silicon-on-insulator fin field-effect transistors

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry's most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (I{sub ds}), gate leakage current (I{sub gs}), transconductance (g{sub m}), and extracted low-field mobility (μ{sub 0}). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Stable doping of carbon nanotubes via molecular self assembly

We report a novel method for stable doping of carbon nanotubes (CNT) based on methods of molecular self assembly. A conformal growth of a self-assembled monolayer of fluoroalkyl trichloro-silane (FTS) at CNT surfaces results in a strong increase of the sheet conductivity of CNT electrodes by 60–300%, depending on the CNT chirality and composition. The charge carrier mobility of undoped partially aligned CNT films was independently estimated in a field-effect transistor geometry (~100 cm²V⁻¹s⁻¹). The hole density induced by the FTS monolayer in CNT sheets is estimated to be ~1.8 ×10¹⁴cm⁻². We also show that FTS doping of CNT anodes greatly improves the performance of organic solar cells. This large and stable doping effect, easily achieved in large-area samples, makes this approach very attractive for applications of CNTs in transparent and flexible electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Transparent hydrogel with enhanced water retention capacity by introducing highly hydratable salt

Polyacrylamide hydrogels containing salt as electrolyte have been used as highly stretchable transparent electrodes in flexible electronics, but those hydrogels are easy to dry out due to water evaporation. Targeted, we try to enhance water retention capacity of polyacrylamide hydrogel by introducing highly hydratable salts into the hydrogel. These hydrogels show enhanced water retention capacity in different level. Specially, polyacrylamide hydrogel containing high content of lithium chloride can retain over 70% of its initial water even in environment with relative humidity of only 10% RH. The excellent water retention capacities of these hydrogels will make more applications of hydrogels become possible.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Critical dimension and pattern size enhancement using pre-strained lithography

This paper proposes a non-wavelength-shortening-related critical dimension and pattern size reduction solution for the integrated circuit industry that entails generating strain on the substrate prior to lithography. Pattern size reduction of up to 49% was achieved regardless of shape, location, and size on the xy plane, and complete theoretical calculations and process steps are described in this paper. This technique can be applied to enhance pattern resolution by employing materials and process parameters already in use and, thus, to enhance the capability of outdated lithography facilities, enabling them to particularly support the manufacturing of flexible electronic devices with polymer substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗