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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11

Development of optimum process for electron beam cross-linking of high density polyethylene thermal energy storage pellets, process scale-up and production of application qualities of material

The electron irradiation conditions required to prepare thermally from stable high density polyethylene (HDPE) were defined. The conditions were defined by evaluating the heat of fusion and the melting temperature of several HDPE specimens. The performance tests conducted on the specimens, including the thermal cycling tests in the thermal energy storage unit are described. The electron beam irradiation tests performed on the specimens, in which the total radiation dose received by the pellets, the electron beam current, the accelerating potential, and the atmospheres were varied, are discussed.

Salyer, I. O.↗

Phenomenology of surface arcs on spacecraft dielectric materials

For electron beam incidence on large specimens of Kapton thermal blanket material, surface arc discharges are shown to cause damage consisting of punchthrough holes which act as focal points for other types of damage, including subsurface tunnels, blowout holes and surface breakup. Under electron bombardment, dielectric sheet specimens separated by a gap are shown to discharge simultaneously. Teflon specimens which have been brushed or rubbed are shown to exhibit directional guidance of discharge arcs, and this phenomenon has been used to generate straight arcs whose velocities have been measured optically.

Balmain, K. G.↗

Materials, structures, and devices for high-speed electronics

Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

Woollam, John A.↗

Characterization of Novel Spacecraft Materials Under High Energy Electron and Atomic Oxygen Exposure

The harsh space environment imposes stringent requirements upon spacecraft materials, especially those located on exterior surfaces of space objects in low Earth orbit (LEO). As humankind moves from space exploration to space commercialization, these polymers may have to last for 15–20 years without considerable degradation of their material properties. Hence, we must understand the effects of the space environment on materials currently in use as well as on untested materials. In the presented study authors exposed several space-relevant polymers to the simulated space weather comprised by electrons and atomic oxygen irradiation. First, materials were thoroughly characterized in their pristine state to create a baseline for the ground- and space-based experiments. Next, alteration of optical, surface, and charge transport properties of the same materials were studied under space-simulated environment.

Elena A. Plis↗

EBIC/TEM investigations of defects in solar silicon ribbon materials

Transmission electron microscopy was used to investigate the defect structure of edge defined film growth (EFG) material, web dentritic ribbons (WEB), and ribbon to ribbon recrystallized material (RTR). The most common defects in all these materials are coherent first order twin boundaries. These coherent twins can be very thin, a few atomic layers. Bundles of the twins which contain odd numbers of twins will in optical images appear as a seemingly single first twin boundary. First-order coherent twin boundaries are not electrically active, except at locations where they contain intrinsic (grain boundary) dislocations. These dislocations take up small deviations from the ideal twin relation and play the same role in twin boundaries as conventional and play the some role in twin boundaries as conventional edge and screw dislocations in small angle tilt and twist boundaries.

Ast, D. G.↗

Electron beam charging and ARC discharging of spacecraft insulating materials

The properties of the arc discharges which are caused by the laboratory exposure of dielectric materials to electron beams are examined, the intent being to simulate conditions on synchronous-orbit spacecraft. Extensive experimental studies are reported for planar dielectrics (Teflon, Kapton, Mylar) on the subjects of incident-flux scaling of discharge properties and the effects of high-energy broad-spectrum electron irradiation from a radioisotpe source. In addition a preliminary evaluation is made of the discharge susceptibility of fiber optic waveguides.

Balmain, K. G.↗

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗

Diverse Electron-Induced Optical Emissions from Space Observatory Materials at Low Temperatures

Electron irradiation experiments have investigated the diverse electron-induced optical and electrical signatures observed in ground-based tests of various space observatory materials at low temperature. Three types of light emission were observed: (i); long-duration cathodoluminescence which persisted as long as the electron beam was on (ii) short-duration (<1 s) arcing, resulting from electrostatic discharge; and (iii) intermediate-duration (~100 s) glow-termed "flares". We discuss how the electron currents and arcing-as well as light emission absolute intensity and frequency-depend on electron beam energy, power, and flux and the temperature and thickness of different bulk (polyimides, epoxy resins, and silica glasses) and composite dielectric materials (disordered SiO2 thin films, carbon- and fiberglass-epoxy composites, and macroscopically-conductive carbon-loaded polyimides). We conclude that electron-induced optical emissions resulting from interactions between observatory materials and the space environment electron flux can, in specific circumstances, make significant contributions to the stray light background that could possibly adversely affect the performance of space-based observatories.

long-duration cathodoluminescence↗

Measurements of the UV and VUV transmission of optical materials during high energy electron irradiation

An experimental program was conducted in which the optical transmission of several transparent materials was measured during high energy electron irradiation. These experiments were conducted using the Dynamitron electron accelerator as a continuous source of 1.5 MeV electrons and the LINAC electron accelerator as a pulsed source of 5-7 MeV electrons. The experimental program consisted of three major portions. The first portion, the optical transmission of fused silica, BeO, MgF2, and LiF was measured at vacuum ultraviolet wavelengths in the range 1550-2000 A during ambient temperature, 1.5 MeV electron irradiation at ionizing dose rates to 0.5 Mrad/sec. In the second portion of the program, the optical transmission of fused silica and BeO was measured in the range 2000-3000 A during high dose rate, elevated temperature 1.5 MeV electron irradiation. In particular, accurate measurements of the optical transmission were made at ionizing dose rates as high as 10 Mrad/sec. In the final portion of the program, the optical transmission of fused silica and BeO was measured in the wavelength range 2000-3000 A during pulsed 5 and 7 MeV electron irradiation from the LINAC accelerator. The maximum time averaged ionizing dose rate was limited to 0.75 Mrad/sec due to accelerator limitations.

Palma, G. E.↗

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter depoairion are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq. cm. resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x to to the -6/ohm. cm. for 300 angstrom film to 2.56 x 10 to the -1/ohm. cm. for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗

Ion beam sputter deposited zinc telluride films

Zinc telluride is of interest as a potential electronic device material, particularly as one component in an amorphous superlattice, which is a new class of interesting and potentially useful materials. Some structural and electronic properties of ZnTe films deposited by argon ion beam sputter deposition are described. Films (up to 3000 angstroms thick) were deposited from a ZnTe target. A beam energy of 1000 eV and a current density of 4 mA/sq cm resulted in deposition rates of approximately 70 angstroms/min. The optical band gap was found to be approximately 1.1 eV, indicating an amorphous structure, as compared to a literature value of 2.26 eV for crystalline material. Intrinsic stress measurements showed a thickness dependence, varying from tensile for thicknesses below 850 angstroms to compressive for larger thicknesses. Room temperature conductivity measurement also showed a thickness dependence, with values ranging from 1.86 x 10 to the -6th/ohm cm for 300 angstrom film to 2.56 x 10 to the -1/ohm cm for a 2600 angstrom film. Measurement of the temperature dependence of the conductivity for these films showed complicated behavior which was thickness dependent. Thinner films showed at least two distinct temperature dependent conductivity mechanisms, as described by a Mott-type model. Thicker films showed only one principal conductivity mechanism, similar to what might be expected for a material with more crystalline character.

Gulino, D. A.↗

Joining Carbon-Carbon Composites and High-Temperature Materials with High Energy Electron Beams

1. Program goals addressed during this period. Experimental work was directed at formation of a low-stress bond between carbon- carbon and aluminum, with the objective of minimizing the heating of the aluminum substrate, thereby minimizing stresses resulting from the coefficient of thermal expansion (CTE) difference between the aluminum and carbon-carbon. A second objective was to form a bond between carbon-carbon and aluminum with good thermal conductivity for electronic thermal management (SEM-E) application. 2. Substrates and joining materials selected during this period. Carbon-Carbon Composite (CCC) to Aluminum. CCC (Cu coated) to Aluminum. Soldering compounds based on Sn/Pb and Sn/Ag/Cu/Bi compositions. 3. Soldering experiments performed. Conventional techniques. High Energy Electron Beam (HEEB) process.

Goodman, Daniel↗

Electron Radiation Effects on Candidate Solar Sail Material

Solar sailing is a unique form of propulsion where a spacecraft gains momentum from incident photons. Solar sails are not limited by reaction mass and provide continual acceleration, reduced only by the lifetime of the lightweight film in the space environment and the distance to the Sun. Once thought to be difficult or impossible, solar sailing has come out of science fiction and into the realm of possibility. Any spacecraft using this propulsion method would need to deploy a thin sail that could be as large as many kilometers in extent. The availability of strong, ultra lightweight, and radiation resistant materials will determine the future of solar sailing. The National Aeronautics and Space Administration's (NASA) Marshall Space Flight Center (MSFC) is concentrating research into the utilization of ultra lightweight materials for spacecraft propulsion. The Space Environmental Effects Team at MSFC is actively characterizing candidate solar sail material to evaluate the thermo-optical and mechanical properties after exposure to space environmental effects. This paper will describe the irradiation of candidate solar sail materials to energetic electrons, in vacuum, to determine the hardness of several candidate sail materials.

Edwards, David L.↗