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At least 199 records · Page 11

All sources NASA NTRS DOE OSTI

NASA NTRS1979

Pulsed-electron-beam annealing of ion-implantation damage

Short-duration high-intensity pulsed electron beams have been used to anneal ion-implantation damage in silicon and to electrically activate the dopant species. Lattice regrowth and dopant activation were determined using He(+)-4 backscattering, SEM, TEM, and device performance characteristics as diagnostic techniques. The annealing mechanism is believed to be liquid-phase epitaxial regrowth initiating from the substrate. The high-temperature transient pulse produced by the electron beam causes the dopant to diffuse rapidly in the region where the liquid state is achieved.

Greenwald, A. C.↗

DOE OSTI2011

Experiments on Disruption Runaway Electron Suppression in the DIII-D Tokamak

Localized wall damage from runaway electrons formed during tokamak disruptions is a serious concern for future large tokamaks like ITER. In the DIII-D tokamak, a large variety of experiments have been conducted to understand runaway electron formation, amplification, and loss; and to devise methods for avoiding wall damage due to runaway electrons following disruptions. As a result, the experiments can be broken into two categories: massive impurity injection experiments and runaway electron studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

NASA NTRS2002

Current Single Event Effects and Radiation Damage Results for Candidate Spacecraft Electronics

We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects, total ionizing dose and proton-induced damage. Devices tested include optoelectronics, digital, analog, linear bipolar, hybrid devices, Analog-to-Digital Converters (ADCs), Digital-to-Analog Converters (DACs), and DC-DC converters, among others.

OBryan, Martha V.↗

NASA NTRS2003

Magnetic Field Would Reduce Electron Backstreaming in Ion Thrusters

The imposition of a magnetic field has been proposed as a means of reducing the electron backstreaming problem in ion thrusters. Electron backstreaming refers to the backflow of electrons into the ion thruster. Backstreaming electrons are accelerated by the large potential difference that exists between the ion-thruster acceleration electrodes, which otherwise accelerates positive ions out of the engine to develop thrust. The energetic beam formed by the backstreaming electrons can damage the discharge cathode, as well as other discharge surfaces upstream of the acceleration electrodes. The electron-backstreaming condition occurs when the center potential of the ion accelerator grid is no longer sufficiently negative to prevent electron diffusion back into the ion thruster. This typically occurs over extended periods of operation as accelerator-grid apertures enlarge due to erosion. As a result, ion thrusters are required to operate at increasingly negative accelerator-grid voltages in order to prevent electron backstreaming. These larger negative voltages give rise to higher accelerator grid erosion rates, which in turn accelerates aperture enlargement. Electron backstreaming due to accelerator-gridhole enlargement has been identified as a failure mechanism that will limit ionthruster service lifetime. The proposed method would make it possible to not only reduce the electron backstreaming current at and below the backstreaming voltage limit, but also reduce the backstreaming voltage limit itself. This reduction in the voltage at which electron backstreaming occurs provides operating margin and thereby reduces the magnitude of negative voltage that must be placed on the accelerator grid. Such a reduction reduces accelerator- grid erosion rates. The basic idea behind the proposed method is to impose a spatially uniform magnetic field downstream of the accelerator electrode that is oriented transverse to the thruster axis. The magnetic field must be sufficiently strong to impede backstreaming electrons, but not so strong as to significantly perturb ion trajectories. An electromagnet or permanent magnetic circuit can be used to impose the transverse magnetic field downstream of the accelerator-grid electrode. For example, in the case of an accelerator grid containing straight, parallel rows of apertures, one can apply nearly uniform magnetic fields across all the apertures by the use of permanent magnets of alternating polarity connected to pole pieces laid out parallel to the rows, as shown in the left part of the figure. For low-temperature operation, the pole pieces can be replaced with bar magnets of alternating polarity. Alternatively, for the same accelerator grid, one could use an electromagnet in the form of current-carrying rods laid out parallel to the rows.

Foster, John E.↗

NASA NTRS1996

Correlation of electron and proton irradiation-induced damage in InP solar cells

The measured degradation of epitaxial shallow homojunction n(+)/p InP solar cells under 1 MeV electron irradiation is correlated with that measured under 3 MeV proton irradiation based on 'displacement damage dose'. The measured data is analyzed as a function of displacement damage dose from which an electron to proton dose equivalency ratio is determined which enables the electron and proton degradation data to be described by a single degradation curve. It is discussed how this single curve can be used to predict the cell degradation under irradiation by any particle energy. The degradation curve is used to compare the radiation response of InP and GaAs/Ge cells on an absolute damage energy scale. The comparison shows InP to be inherently more resistant to displacement damage deposition than the GaAs/Ge.

Walters, Robert J.↗

DOE OSTI2016

Determination of ultra-short laser induced damage threshold of KH{sub 2}PO{sub 4} crystal: Numerical calculation and experimental verification

Rapid growth and ultra-precision machining of large-size KDP (KH{sub 2}PO{sub 4}) crystals with high laser damage resistance are tough challenges in the development of large laser systems. It is of high interest and practical significance to have theoretical models for scientists and manufacturers to determine the laser-induced damage threshold (LIDT) of actually prepared KDP optics. Here, we numerically and experimentally investigate the laser-induced damage on KDP crystals in ultra-short pulse laser regime. On basis of the rate equation for free electron generation, a model dedicated to predicting the LIDT is developed by considering the synergistic effect of photoionization, impact ionization and decay of electrons. Laser damage tests are performed to measure the single-pulse LIDT with several testing protocols. The testing results combined with previously reported experimental data agree well with those calculated by the model. By taking the light intensification into consideration, the model is successfully applied to quantitatively evaluate the effect of surface flaws inevitably introduced in the preparation processes on the laser damage resistance of KDP crystals. This work can not only contribute to further understanding of the laser damage mechanisms of optical materials, but also provide available models for evaluating the laser damage resistance of exquisitely prepared optical components used in high power laser systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

JEDEC Tray Flexures for High-Consequence Electronics

JEDEC matrix trays are an industry standard for the safe handling, transport, and storage of electronics. Manufacturing tolerances of the trays (typical for injection-molded components) forces the creation of an envelope around components rather than a secure interface to prevent the trays themselves from damaging the electronics during use. However, this allows relative motion between the components, another potential damage source. This paper covers the design of tray features (flexures) than enable intentional, tuned contact preload to prevent relative motion, maximizing component safety while keeping the JEDEC tray form-factor. The target preload is balanced between gravity and shipment forces that could be experience during adverse handling or transport to prevent loss of contact or slip and keeping the load itself low enough to prevent component damage. Typical features/dimensions for JECEC trays were employed to maximize utility and minimize tray fabrication difficulty. The design also increases usability and component safety by making the chips visible while still sandwiched between trays. The point design described here exemplifies a simple, easy-to-manufacture tray-matrix flexure that significantly improves the security of supported components

42 ENGINEERING↗

DOE OSTI2013

An atomistic description of the high-field degradation of dielectric polyethylene

A microscopic mechanism governing the initiating step in the high-field aging of crystalline polyethylene is proposed, based on density functional calculations and ab initio molecular dynamics simulations. It is assumed that electrons, holes, and excitons are present in the system. While the additional individual electrons or holes are not expected to lead to significant degradation, the presence of triplet excitons are concluded to be rather damaging. The electron and hole states of the exciton localize on a distorted region of polyethylene, significantly weakening nearby C–H bonds and facilitating C–H bond scission. The barrier to cleavage of the weakened C–H bonds is estimated and is comparable to the thermal energy, suggesting that this mechanism may be responsible for the degradation of polyethylene when placed under electrical stress, e.g., in high-voltage cables.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

NASA NTRS2016

Fabrication of Regolith-Derived Radiation Shields: Preliminary Results

Unlike the Earth, Mars and asteroids do not have a magnetosphere to protect humans, mechanisms and electronics from damaging Galactic Cosmic Radiation (GCR) and solar particle events (SPE). This presents one of the highest risks to crew and onboard electronics during interplanetary journeys. The goal of this project is to evaluate the effectiveness of carbonaceous asteroids and other hydrogen-rich materials as potential radiation shielding materials, which ultimately could be tested during planned crewed missions to a captured asteroid fragment (ARM). This type of investigation represents an initial effort to develop radiation shield material compositions, production methods and technologies, and optimization methodology for manufacturing radiation shields in deep space for large exploration human missions or by emerging new industries seeking to stage their spacecraft for the exploitation of the resources of asteroids. Carbonaceous chondrites (C-type) are of particular interest as sources of compounds such as water ice and hydrogen-rich carbon molecules, which can provide sufficient low Z element density to provide radiation protection at adequate shield thicknesses.

Regolith↗

DOE OSTI2026

Electron energy loss spectroscopy study of ceria sinters and nanoparticles irradiated with swift heavy ions

The electronic energy loss spectra of ceria (CeO 2 ) irradiated with swift heavy ions (27 MeV Xe and 946 MeV Au) in the electronic slowing down regime were measured for bulk sintered samples and nanoparticles by using a double Cs-corrected transmission electron microscope. The low-loss region as well as the core-loss region, including the oxygen K-edge and cerium M 4, 5 white lines, were recorded. No strong lattice disorder was found in the low-loss peaks for both types of samples showing the same bulk oxygen plasmon loss peak at about 15 eV. However, there is a clear evidence of cerium reduction to the trivalent oxidation state after irradiation for the sintered samples as shown by the K-edge shape of oxygen and decrease of the Ce M 4 /M 5 intensity ratio. A similar change of the M 4 /M 5 intensity ratio was observed for the irradiated nanoparticles with respect to the virgin sample owing to the high energy input inside the nanograin. The effect of radiation damage on electron energy loss spectroscopy data is analyzed for both types of samples and irradiation conditions.

Crystallographic defects↗

DOE OSTI2014

Effects of electrostatic discharge on three cryogenic temperature sensor models

Cryogenic temperature sensors are not usually thought of as electrostatic discharge (ESD) sensitive devices. However, the most common cryogenic thermometers in use today are thermally sensitive diodes or resistors - both electronic devices in their base form. As such, they are sensitive to ESD at some level above which either catastrophic or latent damage can occur. Instituting an ESD program for safe handling and installation of the sensor is costly and it is desirable to balance the risk of ESD damage against this cost. However, this risk cannot be evaluated without specific knowledge of the ESD vulnerability of the devices in question. This work examines three types of cryogenic temperature sensors for ESD sensitivity - silicon diodes, Cernox(trade mark, serif) resistors, and wire wound platinum resistors, all manufactured by Lake Shore Cryotronics, Inc. Testing was performed per TIA/EIA FOTP129 (Human Body Model). Damage was found to occur in the silicon diode sensors at discharge levels of 1,500 V. For Cernox(trade mark, serif) temperature sensors, damage was observed at 3,500 V. The platinum temperature sensors were not damaged by ESD exposure levels of 9,900 V. At the lower damage limit, both the silicon diode and the Cernox(trade mark, serif) temperature sensors showed relatively small calibration shifts of 1 to 3 K at room temperature. The diode sensors were stable with time and thermal cycling, but the long term stability of the Cernox(trade mark, serif) sensors was degraded. Catastrophic failure occurred at higher levels of ESD exposure.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2019

Soft matter and nanomaterials characterization by cryogenic transmission electron microscopy

Soft matter has historically been an unlikely candidate for investigation by electron microscopy techniques due to damage by the electron beam as well as inherent instability under a high vacuum environment. Characterization of soft matter has often relied on ensemble-scattering techniques. The recent development of cryogenic transmission electron microscopy (cryo-TEM) provides the soft matter community with an exciting opportunity to probe the structure of soft materials in real space. Cryo-TEM reduces beam damage and allows for characterization in a native, frozen-hydrated state, providing direct visual representation of soft structure. This article reviews cryo-TEM in soft materials characterization and illustrates how it has provided unique insights not possible by traditional ensemble techniques. Soft matter systems that have benefited from the use of cryo-TEM include biological-based “soft” nanoparticles (e.g., viruses and conjugates), synthetic polymers, supramolecular materials as well as the organic–inorganic interface of colloidal nanoparticles. We conclude that while many challenges remain, such as combining structural and chemical analyses; the opportunity for soft matter research to leverage newly developed cryo-TEM techniques continues to excite.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Damage threshold of coating materials on x-ray mirror for x-ray free electron laser

We evaluated the damage threshold of coating materials such as Mo, Ru, Rh, W, and Pt on Si substrates, and that of uncoated Si substrate, for mirror optics of X-ray free electron lasers (XFELs). Focused 1 μm (full width at half maximum) XFEL pulses with the energies of 5.5 and 10 keV, generated by the SPring-8 angstrom compact free electron laser (SACLA), were irradiated under the grazing incidence condition. The damage thresholds were evaluated by in situ measurements of X-ray reflectivity degradation during irradiation by multiple pulses. The measured damage fluences below the critical angles were sufficiently high compared with the unfocused SACLA beam fluence. Rh coating was adopted for two mirror systems of SACLA. One system was a beamline transport mirror system that was partially coated with Rh for optional utilization of a pink beam in the photon energy range of more than 20 keV. The other was an improved version of the 1 μm focusing mirror system, and no damage was observed after one year of operation.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2023

Understanding In-Situ Structure and Chemistry at Battery Interfaces Through Time-Resolved Cryo-EM

Transmission and scanning transmission electron microscopy are vital tools for characterizing interfacial structure and chemistry at high spatial resolutions but are limited by the fact that many materials are quickly damaged by electron beam irradiation. This is a challenge particularly for materials relevant to energy applications, such as lithium-containing battery materials, organic-inorganic hybrids, and liquid electrolytes. Cryogenic electron microscopy (cryo-EM) offers a partial solution to this issue by stabilizing beam-sensitive solid-solid or solid-liquid interfaces for characterization, but typical cryo-EM sample preparations are ex situ and thus cannot capture interfaces in their electrified state of interest to applications. Here, we present a method to prepare cryo-EM samples of electrified battery interfaces in situ to preserve the time-resolved structures and chemistry that arise under applied current or bias.

batteries↗

NASA NTRS2005

Re-Configurable Electronics Characterization under Extreme Thermal Environment

The need for reconfigurable electronics is driven by requirements to survive longer missions and harsher environments. It is possible to compensate for degradations in Extreme Environments (EE). EE has effect on electronics: circuits are designed to exploit device characteristics and when a certain temperature or radiation range is exceeded the circuit function gradually degrades. It is possible to employ Hardening by reconfiguration (HBR) to mitigate drifts, degradation, or damage on electronic devices in EE by using reconfigurable devices and an adaptive self-reconfiguration of circuit topology. In this manner degraded components can be salvaged, and completely damaged components can be bypassed. The challenge of conventional design is replaced with that of designing a recover process that automatically performs the (re) design in place of the designer. The objective of testing a Digital Signal Processor (DSP) under the extreme temperatures was to determine the lowest temperature at which the DAP can operate. The objective of testing a Xilinx VirtexII Pro FPGA board was to initially find our whether the evaluation board and the FPGA would survive and continue at temperature ranges from -180 C, and 120 C. The Virtex II functioned correctly at the temperatures tested. The next test was done on the GM-C filter building block using the same temperature range as the Virtex II. The current lower and upper limits were shown to be reduced as the temperature gets lower. The device function can be recovered by increasing the Vb from .08V to .85V. The negative and positive saturation voltages increases as the temperature gets higher. The function of the device can be recovered by decreasing the Vb from .8V to around .75V. The next test was performed to test the recovery of the GmC low pass filter through Vb in a filter circuit. The test indicate that bias voltage control adjustment is an efficient mechanism for circuit recovery at extreme temperatures.

reliability↗

NASA NTRS1998

Analysis of Retrieved Hubble Space Telescope Thermal Control Materials

Townsend, Jacqueline A.↗

NASA NTRS1998

HST Multi Layer Insulation Failure Review Board Findings

The mechanical and optical properties of the thermal control materials on the Hubble Space Telescope (HST) have degraded over the nearly seven years the telescope has been in orbit. Astronaut observations and photographs from the Second Servicing Mission (SM2) revealed large cracks in the metallized Teflon fluorinated ethylene propylene (FEP), the outer layer of the multi-layer insulation (MLI), in many locations around the telescope. Also, the absorptance of the bonded metallized Teflon FEP radiator surfaces of the telescope has increased over time. A Failure Review Board was established to determine the damage mechanism and to identify a replacement material. Samples of the top layer of the MLI and radiator material were retrieved during SM2, and a thorough investigation into the degradation followed in order to determine the primary cause of the damage. Mapping of the cracks on HST and the ground testing showed that thermal cycling with deep-layer damage from electron and proton radiation are necessary to cause the observed embrittlement. Further, strong evidence was found indicating that chain scission (reduced molecular weight) is the dominant form of damage to the metallized Teflon FEP. Given the damage to the outer layer of the multi-layer insulation (MLI) that was apparent during the second servicing mission (SM2), the decision was made to replace the outer layer during subsequent servicing missions. The replacement material had to meet the stringent thermal requirements of the spacecraft and maintain structural integrity for at least ten years. Ten candidate materials were exposed to simulated orbital environments and a replacement material was selected. This presentation will summarize the FRB results, in particular, the analysis of the retrieved specimens, the results of the simulated environmental exposures, and the selection of the replacement material. The NASA Space Environments and Effects community needs to hear these results because they reveal that Teflon (FEP) films should not be used in LEO as routinely as they are today.

Townsend, Jacqueline↗

NASA NTRS2005

Reconfiguration of Analog Electronics for Extreme Environments: Problem or Solution?

This paper argues in favor of adaptive reconfiguration as a technique to expand the operational envelope of analog electronics for extreme environments (EE). In addition to hardening-by-process and hardening-by-design, "hardening-by-reconfiguration", when applicable, could be used to mitigate drifts, degradation, or damage on electronic devices (chips) in EE, by using re-configurable devices and an adaptive self-reconfiguration of their circuit topology. Conventional circuit design exploits device characteristics within a certain temperature/radiation range; when that is exceeded, the circuit function degrades. On a reconfigurable device, although component parameters change in EE, as long as devices still operate, albeit degraded, a new circuit design, suitable for new parameter values, may be mapped into the reconfigurable structure to recover the initial circuit function. Partly degraded resources are still used, while completely damaged resources are bypassed. Designs suitable for various environmental conditions can be determined prior to operation or can be determined in-situ, by adaptive reconfiguration algorithms running on built-in digital controllers. Laboratory demonstrations of this technique were performed by JPL in several independent experiments in which bulk CMOS reconfigurable devices were exposed to, and degraded by, low temperatures (approx. 196 C), high temperatures (approx.300 C) or radiation (300kRad TID), and then recovered by adaptive reconfiguration using evolutionary search algorithms. Taking this technology from Technology Readiness Level (TRL) 3 to TRL 5 is the target of a current NASA project.

Field Programmable Transistor Array (FPTA)↗