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At least 199 records · Page 11

Design and Optimization of a Fast-Switching Electromagnetic Valve Actuator for Off-highway Vehicle Hydraulic Systems

Electrification of off-highway vehicles offers improved efficiency and reduction in greenhouse gas emissions. However, the extremely low power densities of electric machines relative to the hydraulics used in conventional off-highway vehicles makes electrification challenging. Although the recently proposed Hybrid Hydraulic Electric Architecture (HHEA) can overcome this limitation, it requires frequent switching between the pressure rails using switching valves resulting in losses. Fast switching minimizes the switching losses in these valves, which otherwise significantly reduce the overall efficiency of the system. The primary contribution of this paper is the design and optimization of a linear electromagnetic actuator for a fast-switching valve. This paper identifies the actuator requirements to enable fast switching and presents a design and optimization technique to realize actuators that meet the design objectives. In addition, a multi-physics approach is proposed to model the performance of the complete switching valve by considering the electromagnetic, fluidic, and mechanical physics. An optimal actuator design is obtained using the developed optimization framework, and the multi-physics model demonstrates that the selected design achieves a 30% reduction in throttling-related switching losses by switching 70 % faster than comparable commercial valve designs.

Linear actuators, off-highway vehicle electrificat↗

Moiré-driven topological electronic crystals in twisted graphene

In a dilute two-dimensional electron gas, Coulomb interactions can stabilize the formation of a Wigner crystal. Although Wigner crystals are topologically trivial, it has been predicted that electrons in a partially filled band can break continuous translational symmetry and time-reversal symmetry spontaneously, resulting in a type of topological electron crystal known as an anomalous Hall crystal. Here we report signatures of a generalized version of the anomalous Hall crystal in twisted bilayer–trilayer graphene, whose formation is driven by the moiré potential. The crystal forms at a band filling of one electron per four moiré unit cells (ν = 1/4) and quadruples the unit-cell area, coinciding with an integer quantum anomalous Hall effect. The Chern number of the state is exceptionally tunable, and it can be switched reversibly between +1 and −1 by electric and magnetic fields. Several other topological electronic crystals arise in a modest magnetic field, originating from ν = 1/3, 1/2, 2/3 and 3/2. As a result, the quantum geometry of the interaction-modified bands is likely to be very different from that of the original parent band, which enables possible future discoveries of correlation-driven topological phenomena.

Electronic properties and materials↗

Real-time power management technique for microgrid with flexible boundaries

In order to diminish the impacts brought by high penetration of renewable energy on the reliability of distribution systems, some distribution networks (e.g. Chattanooga electric power board system) have deployed smart switches (SSs) to island some areas to mitigate outage losses. However, due to intermittency and sharply changing rate of renewable energy, it is likely to experience insufficient or excessive power for islanded areas. Therefore, a microgrid controller featured with flexible boundaries is proposed. With proposed microgrid controller, the microgrid can not only shrink or expand its boundaries according to current renewable energy supply, but also disconnect/connect to the main grid with a designated SS. Furthermore, to ensure the microgrid controller could obtain suitable boundaries on the time scale of seconds, a real-time power management technique with alternative generating algorithm is designed to generate all possible alternative boundaries and choose the optimal one, which is scalable to any topology. In addition, in order to maintain state of charge of batteries within a desirable range, anti-overcharge/discharge strategies are designed. Four comprehensive experiments verify that the implementation of the microgrid controllers can realise flexible boundaries and deal with sharply changing rate of renewable generation or load on the time scale of seconds.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO 2

Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-efficient power-electronics devices. Their wider band gaps result in higher breakdown electric fields that enable high-power switching with a lower energy loss. Yet, the leading UWBG semiconductors suffer from intrinsic materials' limitations with regard to their doping asymmetry that impedes their adoption in CMOS technology. Improvements in the ambipolar doping of UWBG materials will enable a wider range of applications in power electronics as well as deep-UV optoelectronics. These advances can be accomplished through theoretical insights on the limitations of current UWBG materials coupled with the computational prediction and experimental demonstration of alternative UWBG semiconductor materials with improved doping and transport properties. As an example, we discuss the case of rutile GeO2 (r-GeO 2 ), a water-insoluble GeO 2 polytype, which is theoretically predicted to combine an ultra-wide gap with ambipolar dopability, high carrier mobilities, and a higher thermal conductivity than β-Ga 2 O 3 . The subsequent realization of single-crystalline r-GeO 2 thin films by molecular beam epitaxy provides the opportunity to realize r-GeO 2 for electronic applications. Future efforts toward the predictive discovery and design of new UWBG semiconductors include advances in first-principles theory and high-performance computing software, as well as the demonstration of controlled doping in high-quality thin films with lower dislocation densities and optimized film properties.

36 MATERIALS SCIENCE↗

Ferroelectricity of wurtzite Al 1−x Hf x N heterovalent alloys

Thin films of aluminum hafnium nitride (Al1−xHfxN) were synthesized via reactive magnetron sputtering for Hf contents up to x = 0.13. X-ray diffraction showed a single c-axis oriented wurtzite phase for all films. Hard x-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d 33,f,meas measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent–and not just trivalent–alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.

36 MATERIALS SCIENCE↗

A 3D-printed molecular ferroelectric metamaterial

Significance Molecular ferroelectrics, which show the ability to switch the electromechanical activity by an external electric field, establish the basis for mechanical metamaterial technologies. Despite their theoretical promise, such mechanical metamaterials remain hindered by the lack of adaptive stimuli-responsive materials which can be effectively tuned “on demand” across time and length scales. Here, we unravel a printable mechanical metamaterial of imidazolium perchlorate with superior electromechanical coupling and reprogrammable stiffness. We propose a continuous rapid three-dimensional (3D) printing technique which can reduce the manufacturing time of ferroelectrics from hours down to minutes. The printed molecular ferroelectric metamaterial structure is then shown to enable a tunable-frequency vibration-isolating architecture. This study paves the way for rationally designed 3D-printable molecular ferroelectric metamaterials.

36 MATERIALS SCIENCE↗

Machine Learning-Assisted Distribution System Network Reconfiguration Problem

High penetration from volatile renewable energy resources in the grid and the varying nature of loads raise the need for frequent line switching to ensure the efficient operation of electrical distribution networks. Operators must ensure maximum load delivery, reduced losses, and the operation between voltage limits. However, computations to decide the optimal feeder configuration are often computationally expensive and intractable, making it unfavorable for real-time operations. This is mainly due to the existence of binary variables in the network reconfiguration optimization problem. To tackle this issue, we have devised an approach that leverages machine learning techniques to reshape distribution networks featuring multiple substations. This involves predicting the substation responsible for serving each part of the network. Hence, it leaves simple and more tractable Optimal Power Flow problems to be solved. This method can produce accurate results in a significantly faster time, as demonstrated using the IEEE 37-bus distribution feeder. Compared to the traditional optimization-based approaches, a feasible solution is achieved approximately ten times faster for all the tested scenarios.

deep neural networks↗

Electrically tunable nonlinear light generation in plasmonic tunnel junctions

Active and efficient control of nonlinear optical processes is essential for integrated photonics, with applications in signal processing, ultrafast switching, and quantum light manipulation. While nanophotonic structures are powerful for enhancing nonlinearities, achieving wide-range electrical tunability has remained a challenge. Plasmonic tunnel junctions offer a unique path to bridge this gap because they combine extreme optical field confinement with direct electrical control in a single nanoscale device. Here, we report the first, to our knowledge, demonstration of electrically tunable second-harmonic generation (SHG) in plasmonic tunnel junctions. Using ultra-stable epitaxial heterostructures, we achieve reproducible modulation of SHG with depths up to ∼500% and magnitudes above 1.3V −1 . We identify two mechanisms, electric-field-induced SHG (EFISH) and ion migration, that can either compete or cooperate depending on junction thickness and bias, enabling both broad tunability and ferroelectric-like hysteretic switching. These findings establish plasmonic tunnel junctions as a platform for electrically controlled nonlinear optics, with potential for nanoscale light sources, reconfigurable modulators, and neuromorphic photonic devices..

42 ENGINEERING↗

Evidence for a thermally driven charge-density-wave transition in 1T-TaS 2 thin-film devices: Prospects for GHz switching speed

We report on the room-temperature switching of 1T-TaS 2 thin-film charge-density-wave devices, using nanosecond-duration electrical pulsing to construct their time-resolved current–voltage characteristics. The switching action is based upon the nearly commensurate to incommensurate charge-density-wave phase transition in this material, which has a characteristic temperature of 350 K at thermal equilibrium. For sufficiently short pulses, with rise times in the nanosecond range, self-heating of the devices is suppressed, and their current–voltage characteristics are weakly nonlinear and free of hysteresis. This changes as the pulse duration is increased to ~200 ns, where the current develops pronounced hysteresis that evolves nonmonotonically with the pulse duration. By combining the results of our experiments with a numerical analysis of transient heat diffusion in these devices, we clearly reveal the thermal origins of their switching. In spite of this thermal character, our modeling suggests that suitable reduction of the size of these devices should allow their operation at GHz frequencies.

36 MATERIALS SCIENCE↗

Three-phase, three-level inverters and methods for performing soft switching with phase synchronization

A three-phase, N-level inverter and method are disclosed. A circuit topology of the inverter comprises first, second and third sets of switches and first, second and third inductors. Each switch comprises at least first, second and third terminals, the first terminals being control terminals. The first terminals of the first, second and third inductors are electrically coupled to the first, second and third sets of switches, respectively. A current controller performs a control algorithm that causes it to output first, second and third sets of gating signals to the control terminals of the switches of the first, second and third sets of switches, respectively, to cause them to be placed in an on state or an off state in a particular sequence to perform zero voltage switching while maintaining synchronization of the three phases of the three-phase, N-level inverter.

24 POWER TRANSMISSION AND DISTRIBUTION↗

Manipulation of spin orientation via ferroelectric switching in Fe-doped Bi 2 WO 6 from first principles

Atomic-scale control of spins by electric fields is highly desirable for future technological applications. Magnetically doped Aurivillius-phase oxides present one route to achieve this, with magnetic ions substituted into the ferroelectric structure at dilute concentrations, resulting in spin-charge coupling. However, there has been minimal exploration of the ferroelectric switching pathways in this materials class, limiting predictions of the influence of an electric field on magnetic spins in the structure. Here, we determine the ferroelectric switching pathways of the end member of the Aurivillius phase family, Bi 2 WO 6 , using a combination of group theoretic analysis and density functional theory calculations. We find that in the ground state P2 1 ab phase, a two-step switching pathway via C2 and Cm intermediate phases provides the lowest energy barrier. Considering iron substitutions on the W site in Bi 2 WO 6 , we determine the spin easy axis. Finally, by tracking the change in spin directionality during ferroelectric switching, we find that a 90° switch in the polarization direction leads to a 112° reorientation of the spin easy axis. The low-symmetry crystal-field environment of Bi 2 WO 6 and magnetoelastic coupling on the magnetic dopant provide a route to spin control via an applied electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Direct electron beam patterning of electro-optically active PEDOT:PSS

The optical and electronic tunability of the conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) has enabled emerging applications as diverse as bioelectronics, flexible electronics, and micro- and nano-photonics. High-resolution spatial patterning of PEDOT:PSS opens up opportunities for novel active devices in a range of fields. However, typical lithographic processes require tedious indirect patterning and dry etch processes, while solution-processing methods such as ink-jet printing have limited spatial resolution. Here, we report a method for direct write nano-patterning of commercially available PEDOT:PSS through electron-beam induced solubility modulation. The written structures are water stable and maintain the conductivity as well as electrochemical and optical properties of PEDOT:PSS, highlighting the broad utility of our method. We demonstrate the potential of our strategy by preparing prototypical nano-wire structures with feature sizes down to 250 nm, an order of magnitude finer than previously reported direct write methods, opening the possibility of writing chip-scale microelectronic and optical devices. We finally use the high-resolution writing capabilities to fabricate electrically-switchable optical diffraction gratings. We show active switching in this archetypal system with >95 % contrast at CMOS-compatible voltages of +2 V and -3 V, offering a route towards highly-miniaturized dynamic optoelectronic devices.

42 ENGINEERING↗

Regional Variation in Light-Duty Plug-in Electric Vehicle Emissions

Automobile electrification is viewed as one of the key requirements for deep decarbonization of transportation. However, the exact magnitude of decarbonization from switching from a combustion of petroleum-based fuels to grid-derived electricity is a complex issue. Variations in local grid mixes lead to differing carbon intensities of electricity in different regions. This complexity is compounded by geographical differences in vehicle characteristics. This analysis considers these geographic differences to produce a historical assessment of the fuel-cycle carbon emissions of plug-in electric vehicles (PEVs) in the United States from 2011 to 2021. We find that PEVs in the United States decreased in electricity-derived carbon intensity, from 187 grams per mile to 110 grams per mile from 2011 to 2021 due to improvements in the electric grid and vehicle efficiency. Through 2021, PEVs emitted a total of 13.6 million metric tons of greenhouse gas (GHG) emissions in the United States, including both emissions from electricity and gasoline, while driving a total of 100 billion miles. Of this total, 8.39 million metric tons was due to electricity consumption. Over the same distance, comparable gasoline vehicles would have emitted between 29 and 41 million metric tons of GHG, leading to a reduction of 15 to 27 million metric tons. Relative to national-level assessments that do not factor in this regional difference, these electric vehicles resulted in 13% greater reductions in GHG emissions than previously calculated. In the future, announced goals to further decarbonize the electricity sector will continue to reduce the emissions of PEVs, including reducing emissions rates for vehicles already on the road, further improving the benefits relative to the unchanging emissions of contemporaneous gasoline vehicles.

02 PETROLEUM↗

Thermodynamic Theory of Proximity Ferroelectricity

Proximity ferroelectricity has recently been reported as a new design paradigm for inducing ferroelectricity, where a nonferroelectric polar material becomes a ferroelectric one by interfacing with a thin ferroelectric layer. Strongly polar materials, such as AlN and ZnO, which were previously unswitchable with an external field below their dielectric breakdown fields, can now be switched with practical coercive fields when they are in intimate proximity to a switchable ferroelectric. Here, we develop a general Landau-Ginzburg theory of proximity ferroelectricity in multilayers of nonferroelectrics and ferroelectrics to analyze their switchability and coercive fields. The theory predicts regimes of both “proximity switching,” where the multilayers collectively switch, and “proximity suppression,” where they collectively do not switch. The mechanism of the proximity ferroelectricity is an internal electric field determined by the polarization of the layers and their relative thickness in a self-consistent manner that renormalizes the double-well ferroelectric potential to lower the steepness of the switching barrier. Further reduction in the coercive field emerges from charged defects in the bulk that act as nucleation centers. The application of the theory to proximity ferroelectricity in Al x−1⁢ Sc x ⁢N/AlN and Zn 1−x ⁢Mg x ⁢O/ZnO bilayers is demonstrated. The theory further predicts that dielectric-ferroelectric and paraelectric-ferroelectric multilayers can potentially lead to induced ferroelectricity in the dielectric or paraelectric layers, resulting in the entire stack being switched, an exciting avenue for new discoveries. This thawing of “frozen ferroelectrics,” paraelectrics, and potentially dielectrics with high dielectric constants promises a large class of new ferroelectrics with exciting prospects for previously unrealizable domain-patterned optoelectronic and memory technologies.

36 MATERIALS SCIENCE↗

Tunnel-FET Switching Is Governed by Non-Lorentzian Spectral Line Shape

In tunnel field-effect transistors (tFETs), the preferred mechanism for switching occurs by alignment (on) or misalignment (off) of two energy levels or band edges. Unfortunately, energy levels are never perfectly sharp. When a quantum dot interacts with a wire, its energy is broadened. Its actual spectral shape controls the current/voltage response of such transistor switches, from on (aligned) to off (misaligned). The most common model of spectral line shape is the Lorentzian, which falls off as reciprocal energy offset squared. Unfortunately, this is too slow a turnoff, algebraically, to be useful as a transistor switch. Electronic switches generally demand an on/off ratio of at least a million. Steep exponentially falling spectral tails would be needed for rapid off-state switching. This requires a new electronic feature, not previously recognized: narrowband, heavy-effective mass, quantum wire electrical contacts, to the tunneling quantum states. These are a necessity for spectrally sharp switching.

42 ENGINEERING↗

Low cost switching circuit for van der Pauw resistivity and Hall measurements at various temperatures

The electrical characterization of materials, particularly superconductors, semiconductors, and those undergoing metal-insulator transitions (MITs), relies significantly on resistivity and Hall measurements as a function of temperature. The van der Pauw four-point probe method is commonly used for such measurements, which involves resistance measurements for different circuit configurations connected to sample contacts. However, repeating these measurements at different temperatures is challenging and time consuming. Here, this study introduces a novel approach utilizing a switching circuit controlled by an Arduino device and a LabVIEW program to automate resistance measurements for different electrical configurations. The effectiveness of this setup was demonstrated by testing V 2 O 3 thin film samples deposited on Al 2 O 3 (001) substrates using DC magnetron sputtering. The MIT temperature of the sample was 115 K during heating and 100 K during cooling. The sample exhibited p-type charge carriers with a Hall coefficient of 1.3 ± 0.1 x 10 -4 cm 3 /C and Hall mobility of 1.7 x 10 -1 cm 2 /V∙s, which is consistent with findings from other studies employing commercial equipment.

36 MATERIALS SCIENCE↗

A Multi-Site Networked Hardware-in-Loop Platform for Evaluation of Interoperability and Distributed Intelligence at Grid-Edge

Electric power systems have experienced large increases in the number of intelligent, connected and controllable devices being deployed, leading to a high degree of distributed intelligence at the grid-edge. These devices, both utility-owned and consumer-owned, include but are not limited to: renewable generation sources, energy storage, remote switches, voltage regulators, and smart controllable loads such as electric vehicles. These new devices provide significant potential for increased operational flexibility that can be leveraged to achieve system reconfiguration, resiliency improvements, power quality improvements, and distribution system automation. However, there are two significant challenges that must be addressed before these assets can be leveraged for operations: interoperability and system level validation prior to deployment. Because of the complexity of distributed control systems, and their interactions with legacy centralized controls, a purely simulations-based approach for pre-deployment validation is not sufficient. It requires hardware-in-loop testing to emulate the operational hardware devices and evaluate their performance. Additionally, securely integrating multiple test facilities at utility operators and vendors might enable rapid scale-up of evaluation platforms, and remove the need for multiple expensive standalone installations. Presented in this paper, is the development of a multi-site evaluation platform that employs Advanced Distribution Management Systems (ADMS), distributed control devices, real-time hardware-in-loop assets, secure communication links, and protocol adapters. This platform uses standards-based approaches and open-source tools, and hence can serve as a template for other researchers and institutions to implement their multi-site evaluation frameworks for pre-deployment testing.

Essakiappan, Somasundaram↗

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better performance and integration than traditional oxide ferroelectrics with semiconductors such as Si, SiC, and III-V compounds. However, wurtzite-type ferroelectrics generally require enormous electric fields, approaching breakdown, to reverse their polarization. The underlying switching mechanism(s), especially for multinary compounds and alloys, remains elusive. Here, we examine the switching behaviors in Al 1-x Sc x N alloys and wurtzite-type multinary candidate compounds we recently computationally identified. We find that switching in these tetrahedrally coordinated materials proceeds via a variety of nonpolar intermediate structures and that switching barriers are dominated by the more-electronegative cations. For Al 1-x Sc x N alloys, we find that the switching pathway changes from a collective mechanism to a lower-barrier mechanism enabled by inversion of individual tetrahedra with increased Sc composition. Our findings provide insights for future engineering and realization of wurtzite-type materials and open a door to understanding domain motion.

36 MATERIALS SCIENCE↗