SEARCH · Engineering Papers

Results for “dislocation density”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

196 records · Page 11

All sources NASA NTRS DOE OSTI

NASA NTRS1989

Delayed Shutters For Dual-Beam Molecular Epitaxy

System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

Grunthaner, Frank J.↗

NASA NTRS1985

Structural defects in crystalline silicon

The basic photovoltaic properties of a given crystalline silicon specimen seem to be governed by density and nature of two to three dimensional lattice defects. These are mainly generated by primary growth conditions as grain boundaries of more or less intrinsic character or second phase precipitates from supersaturated solutions of carbon or oxygen. Considerably high values of both solubility and diffusivity in connection with their abundance in common refractory material systems account for the predominance of the two particular elements. Unsaturated dislocations of different types very often can be seen as a consequence of the existence of more dimensional defects as described initially. The final performance of a solar cell is dependent of the concentration and distribution of recombination active centers in the different regions of this device. Typical representatives are fast diffusing transition metals in form of either single atoms or simple complexes. Their avoidance, annihilation, or removal is of great concern in different fields of electronic materials development.

Sirtl, E.↗

NASA NTRS2012

Reduction of Defects in Germanium-Silicon

Volz, M. P.↗

NASA NTRS1973

Interaction between a circular inclusion and an arbitrarily oriented crack

The plane interaction problem for a circular elastic inclusion imbedded into an elastic matrix which contains an arbitrarily oriented crack is considered. Using the existing solutions for the edge dislocations as Green's functions, first the general problem of a through crack in the form of an arbitrary smooth arc located in the matrix in the vicinity of the inclusion is formulated. The integral equations for the line crack are then obtained as a system of singular integral equation with simple Cauchy kernels. The singular behavior of the stresses around the crack tips is examined and the expressions for the stress intensity factors representing the strength of the stress singularities are obtained in terms of the asymptotic values of the density functions of the integral equations. The problem is solved for various typical crack orientations and the corresponding stress intensity factors are given.

Erdogan, F.↗

NASA NTRS1975

Interaction between a circular inclusion and an arbitrarily oriented crack

The plane interaction problem for a circular elastic inclusion embedded in an elastic matrix which contains an arbitrarily oriented crack is considered. Using the existing solutions for the edge dislocations as Green's functions, first the general problem of a through crack in the form of an arbitrary smooth arc located in the matrix in the vicinity of the inclusion is formulated. The integral equations for the line crack are then obtained as a system of singular integral equations with simple Cauchy kernels. The singular behavior of the stresses around the crack tips is examined and the expressions for the stress-intensity factors representing the strength of the stress singularities are obtained in terms of the asymptotic values of the density functions of the integral equations. The problem is solved for various typical crack orientations and the corresponding stress-intensity factors are given.

Erdogan, F.↗

NASA NTRS2012

Collisional Processing of Comet and Asteroid Surfaces: Velocity Effects on Absorption Spectra

A new paradigm has emerged where 3.9 Gyr ago, a violent reshuffling reshaped the placement of small bodies in the solar system (the Nice model). Surface properties of these objects may have been affected by collisions caused by this event, and by collisions with other small bodies since their emplacement. These impacts affect the spectrographic observations of these bodies today. Shock effects (e.g., planar dislocations) manifest in minerals allowing astronomers to better understand geophysical impact processing that has occurred on small bodies. At the Experimental Impact Laboratory at NASA Johnson Space Center, we have impacted forsterite and enstatite across a range of velocities. We find that the amount of spectral variation, absorption wavelength, and full width half maximum of the absorbance peaks vary non-linearly with the velocity of the impact. We also find that the spectral variation increases with decreasing crystal size (single solid rock versus granular). Future analyses include quantification of the spectral changes with different impactor densities, temperature, and additional impact velocities. Results on diopside, fayalite, and magnesite can be found in Lederer et al., this meeting.

Lederer, S. M.↗

NASA NTRS2007

Growth and Characterization of 3C-SiC and 2H-AIN/GaN Films and Devices Produced on Step-Free 4H-SiC Mesa Substrates

While previously published experimental results have shown that the step-free (0 0 0 1) 4H-SiC mesa growth surface uniquely enables radical improvement of 3C-SiC and 2H-AlN/GaN heteroepitaxial film quality (greater than 100-fold reduction in extended defect densities), important aspects of the step-free mesa heterofilm growth processes and resulting electronic device benefits remain to be more fully elucidated. This paper reviews and updates recent ongoing studies of 3C-SiC and 2H-AlN/GaN heteroepilayers grown on top of 4H-SiC mesas. For both 3C-SiC and AlN/GaN films nucleated on 4H-SiC mesas rendered completely free of atomic-scale surface steps, TEM studies reveal that relaxation of heterofilm strain arising from in-plane film/substrate lattice constant mismatch occurs in a remarkably benign manner that avoids formation of threading dislocations in the heteroepilayer. In particular, relaxation appears to occur via nucleation and inward lateral glide of near-interfacial dislocation half-loops from the mesa sidewalls. Preliminary studies of homojunction diodes implemented in 3C-SiC and AlN/GaN heterolayers demonstrate improved electrical performance compared with much more defective heterofilms grown on neighbouring stepped 4H-SiC mesas. Recombination-enhanced dislocation motion known to degrade forward-biased 4H-SiC bipolar diodes has been completely absent from our initial studies of 3C-SiC diodes, including diodes implemented on defective 3C-SiC heterolayers grown on stepped 4H-SiC mesas.

Neudeck, P. G.↗

NASA NTRS2014

Data Processing and Experimental Design for Micrometeorite Impacts in Small Bodies

Comets and asteroids have been altered from their original "pristine" state by impacts occurring throughout their 4.5 billion year lives: [1]. Proof of shock deformation has been detected in the crystal structure of several Stardust samples from Comet Wild 2 [2, 3]. Analyses indicated that the planar dislocations in the crystal structure of the minerals had been imparted by impacts sustained during their lives, and not due to the aerogel capture process. Distortions to crystal structure also affect the ideal absorption spectra in the infrared, and [4], thus providing indirect evidence of its impact history and a means of remotely investigating the impact history of small bodies through comparing laboratory spectra with spectra observed by telescopes or spacecraft. -The effects of impacts propagating shock waves through minerals were investigated through laboratory impact experiments. Utilizing NASA Johnson Space Center's Experimental Impact Laboratory, projectiles were fired from the vertical gun at velocities ranging from 2.0 to 2.8 km/sec, projected impact velocities between Kuiper Belt Objects. Two types of projectiles were used, including spherical alumina ceramic, whose density mimics that of rock, and cylinders made from the same material that they impacted. The target materials chosen for testing included: OLIVINES forsterite (Mg2SiO4) and fayalite, Fe2SiO4); PYROXENES enstatite (Mg2Si2O6) and diopside (MgCaSi2O6); and CARBONATES magnesite (MgCO3) and siderite (FeCO3). Targets were impacted at either 25 C or cooled to -20 C to examine the effects of temperature, if any, on lattice distortions during the shock propagation. As comets and asteroids can undergo a wide range of temperatures in their orbital lifetimes, the effect of temperature on the equation of state of minerals being shocked needs to be examined for interpreting the results of these experiments. The porosity of the target mineral is varied by either grinding it into a powder/granular texture or as whole mineral rocks to investigate the differences in shock propagation when voids are present. By varying velocity, ambient temperature, and porosity, we can investigate different variables affecting impacts in the solar system. -Data indicates that there is a non-linear relationship between peak shock pressure and the variation in infrared spectral absorbances by the distorted crystal structure. The maximum variability occurs around 37 GPa in enstatite and forsterite. The particle size distribution of the impacted material similarly changes with velocity/peak shock pressure. -The experiments described above are designed to measure the near- to mid-IR effects from these changes to the mineral structure. See Lederer et al., this meeting for additional experimental results.

Jensen, E.↗

NASA NTRS2012

Influence of Containment on the Growth of Silicon-Germanium: A Materials Science Flight Project

A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

Volz, M. P.↗

NASA NTRS2014

Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science ISS Investigation

A series of Ge(1-x)Si(x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processinginduced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction. The plans for the flight experiments will be described.

Volz, M. P.↗

NASA NTRS2014

Influence of Containment on the Growth of Silicon-Germanium (ICESAGE): A Materials Science Investigation

A series of Ge Si crystal growth experiments are planned to be conducted in the Low 1-x x Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

Volz, M. P.↗

NASA NTRS2016

Detached Solidification of Germanium-Silicon Crystals on the ISS

A series of Ge(sub 1-x) Si(sub x) crystal growth experiments are planned to be conducted in the Low Gradient Furnace (LGF) onboard the International Space Station. The primary objective of the research is to determine the influence of containment on the processing-induced defects and impurity incorporation in germanium-silicon alloy crystals. A comparison will be made between crystals grown by the normal and "detached" Bridgman methods and the ground-based float zone technique. Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10-100 microns. Long duration reduced gravity is essential to test the proposed theory of detached growth. Detached growth requires the establishment of a meniscus between the crystal and the ampoule wall. The existence of this meniscus depends on the ratio of the strength of gravity to capillary forces. On Earth, this ratio is large and stable detached growth can only be obtained over limited conditions. Crystals grown detached on the ground exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

Volz, M. P.↗

NASA NTRS2016

Detached Solidification of Germanium-Silicon Crystals on the ISS

Volz, M. P.↗

NASA NTRS2002

Glennan Microsystems Initiative

During the 2001-2002 award period, we performed research on Pt/Ti/bare 6H-SiC and bare 4H-SiC interfaces in order to identify their electronic properties as a function of surface preparation. The overall aim of this work is to optimize the electronic properties of metal contacts to SiC as well as the active SiC material itself as a function of surface preparation and subsequent processing. Initially, this work has involved identifying bare surface, subsurface, and metal induced gap states at the metal-SiC contact and correlating energies and densities of deep levels with Schottky barrier heights. We used low energy electron-excited nanoluminescence (LEEN) spectroscopy, X-ray photoemission spectroscopy (XPS), and Secondary Ion Mass Spectrometry (SIMS) in order to correlate electronic states and energy bands with chemical composition, bonding, and crystal structure. A major development has been the discovery of polytype transformations that occur in 4H-SiC under standard microelectronic process conditions used to fabricate SiC devices. Our results are consistent with the stacking fault generation, defect formation, and consequent degradation of SiC recently reported for state-of-the-art ABB commercial diodes under localized electrical stress. Our results highlight the importance of -optimizing process conditions and material properties - anneal times, temperatures and doping to control such structural changes within epitaxial SiC layers. Thus far, we have established threshold times and temperatures beyond which 4H-SiC exhibits 3C-SiC transformation bands for a subset of dopant concentrations and process conditions. On the basis of this temperature time behavior, we have been able to establish an activation energy of approximately 2.5 eV for polytype transformation and dislocation motion. Work continues to establish the fundamental mechanisms underlying the polytype changes and its dependence on material parameters.

Brillson, Leonard J.↗

NASA NTRS2009

Influence of Containment on Defects in GeSi Crystals

Crystals grown without being in contact with a container have superior quality to otherwise similar crystals grown in direct contact with a container, especially with respect to impurity incorporation, formation of dislocations, and residual stress in crystals. "Detached" or "dewetted" Bridgman growth is similar to regular Bridgman growth in that most of the melt is in contact with the crucible wall, but the crystal is separated from the wall by a small gap, typically of the order of 10(exp -5) m. A small meniscus bridges the gap between the top of the crystal and the wall. Key parameters involved in achieving detached growth are the contact angle between the melt and crucible and the pressure differential across the meniscus. Sessile drop measurements were used to determine the wetting angles of Ge(sub 1-x)Si(sub x) melts on a variety of substrates and found that the highest wetting angles were achieved with pyrolitic boron nitride (pBN). GeSi crystals have been repeatedly grown detached in pBN crucibles but only occasionally in crucibles with lower wetting angles. Experiments have been conducted to assess the effect of pressure differential across the meniscus in sealed crucibles. This was done by adjusting the temperature profile after partial melting of the starting material. In a separate set of experiments, the pressure was controlled by connecting the volume below the meniscus to a regulated gas supply. The experiments were in agreement with calculations which predicted that stable detachment will only occur in crucibles with a low wetting angle over a relatively narrow range of pressure differential. Detached-grown crystals exhibited superior structural quality as evidenced by measurements of etch pit density, synchrotron white beam X-ray topography and double axis X-ray diffraction.

Volz, M. P.↗

NASA NTRS1992

Deformation mechanisms of NiAl cyclicly deformed near the brittle-to-ductile transformation temperature

One of the ongoing challenges of the aerospace industry is to develop more efficient turbine engines. Greater efficiency entails reduced specific strength and larger temperature gradients, the latter of which means higher operating temperatures and increased thermal conductivity. Continued development of nickel-based superalloys has provided steady increases in engine efficiency and the limits of superalloys have probably not been realized. However, other material systems are under intense investigation for possible use in high temperature engines. Ceramic, intermetallic, and various composite systems are being explored in an effort to exploit the much higher melting temperatures of these systems. NiAl is considered a potential alternative to conventional superalloys due to its excellent oxidation resistance, low density, and high melting temperature. The fact that NiAl is the most common coating for current superalloy turbine blades is a tribute to its oxidation resistance. Its density is one-third that of typical superalloys and in most temperature ranges its thermal conductivity is twice that of common superalloys. Despite these many advantages, NiAl requires more investigation before it is ready to be used in engines. Binary NiAl in general has poor high-temperature strength and low-temperature ductility. On-going research in alloy design continues to make improvements in the high-temperature strength of NiAl. The factors controlling low temperature ductility have been identified in the last few years. Small, but reproducible ductility can now be achieved at room temperature through careful control of chemical purity and processing. But the mechanisms controlling the transition from brittle to ductile behavior are not fully understood. Research in the area of fatigue deformation can aid the development of the NiAl system in two ways. Fatigue properties must be documented and optimized before NiAl can be applied to engineering systems. More importantly though, probing the deformation mechanisms operating in fatigue will lead to a better understanding of NiAl's unique characteristics. Low cycle fatigue properties have been reported on binary NiAl in the past year, yet those studies were limited to two temperature ranges: room temperature and near 1000 K. Eventually, fatigue property data will be needed for a wide range of temperatures and compositions. The intermediate temperature range near the brittle-to-ductile transition was chosen for this study to ascertain whether the sharp change occurring in monotonic behavior also occurs under cyclic conditions. An effort was made to characterize the dislocation structures which evolved during fatigue testing and comment on their role in the deformation process.

Antolovich, Stephen D.↗