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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 199 records · Page 11
All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Photovoltaic investigation of minority carrier lifetime in the heavily-doped emitter layer of silicon junction solar cell

The results of experiments on the recombination lifetime in a phosphorus diffused N(+) layer of a silicon solar cell are reported. The cells studied comprised three groups of Czochralski grown crystals: boron doped to one ohm-cm, boron doped to 6 ohm-cm, and aluminum doped to one ohm-cm, all with a shunt resistance exceeding 500 kilo-ohms. The characteristic bulk diffusion length of a cell sample was determined from the short circuit current response to light at a wavelength of one micron. The recombination rates were obtained by measurement of the open circuit voltage as a function of the photogeneration rate. The recombination rate was found to be dependent on the photoinjection level, and is positive-field controlled at low photoinjection, positive-field influence Auger recombination at a medium photoinjection level, and negative-field controlled Auger recombination at a high photoinjection level.

Ho, C.-T.↗
NASA NTRS1982

Porous plate analog burner study of composite solid propellant flame structure

A porous plate burner system for studying the structure and interaction of diffusion flames from adjacent unlike sources of oxidizer to simulate the behavior of solid propellant flames is presented. The passage of oxidizer gases through ports of determined diameters represents decomposing oxidizer crystals, and are adjustable for various oxidizer/fuel ratio experiments. Tests with air, ethane, oxygen, and oxygen-air mixtures are described, with parameters of flow rate, oxygen/fuel ratio, and pressure. Coarse ports are found to be oxidizer rich, while fine ports are stoichiometric. More heat feedback is found with fine ports, indicating that fine particle propellant systems burn faster unless fuel allocation is such that the reduced temperature overcomes the reduced diffusion length. Further observations on the interactions of flames are reported.

Strand, L. D.↗
NASA NTRS1981

Study of radiation induced deep-level defects and annealing effects in the proton irradiated AlGaAs-GaAs solar cells

The radiation induced deep-level defects and the recombination parameters in the proton irradiated AlGaAs-GaAs p-n junction solar cells were investigated over a wide range of proton energies (from 50 KeV to 10 MeV) and proton fluences (from 10 to the 10th to 10 to the 13th P/sq cm), using DLTS, I-V, C-V, and SEM-EMIC measurement techniques. The measurements were used to determine the defect and recombination parameters such as defect density and energy level, carrier lifetimes, and the hole diffusion lengths in the GaAs LPE layers. Results show that a good correlation was obtained between the measured defect parameters and the dark recombination current as well as the performance parameters of the solar cells. The most damages to the cell were produced by the 200 KeV protons. In addition, the effects of low temperatures (200 to 400 C) thermal annealing on the deep-level defects and the dark current of the 200 KeV proton irradiated samples were examined.

Li, S. S.↗
NASA NTRS1981

Damage and coefficients and thermal annealing of irradiated silicon and GaAs solar cells

Electron and proton damage coefficients have been measured for several types of silicon cells of recent manufacture using 1 MeV electrons and protons with energies of 8.3, 17.5 and 40 MeV. LPE (AlGa)As-GaAs cells were also irradiated and pseudodamage coefficients derived under the assumption that the irradiation changes the diffusion length in only one of the n- or p-type layers. After irradiation the cells were annealed isochronally up to 450 C. The damage coefficient and annealing data for silicon cells are in substantial agreement with previous work. The GaAs cells have pseudo-damage coefficients which are dependent on fluence, and have about the same energy dependence as Si damage coefficients.

Anspaugh, B. E.↗
NASA NTRS1982

Analysis of defect structure in silicon. Characterization of samples from UCP ingot 5848-13C

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13 C. Important trends were noticed between the measured data, cell efficiency, and diffusion length. Grain boundary substructure appears to have an important effect on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements give statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for QTM analysis was perfected.

Natesh, R.↗
NASA NTRS1982

Advances in large-diameter liquid encapsulated Czochralski GaAs

The purity, crystalline perfection, and electrical properties of n- and p-type GaAs crystals grown by the liquid encapsulated Czochralski (LEC) technique are evaluated. The determination of the dislocation density, incidence of twinning, microstructure, background purity, mobility, and minority carrier diffusion length is included. The properties of the LEC GaAs crystals are generally comparable to, if not superior to those of small-diameter GaAs material grown by conventional bulk growth techniques. As a result, LEC GaAs is suitable for application to minority carrier devices requiring high-quality and large-area substrates.

Chen, R. T.↗
NASA NTRS1983

Analysis of defect structure in silicon. Characterization of SEMIX material. Silicon sheet growth development for the large area silicon sheet task of the low-cost solar array project

Statistically significant quantitative structural imperfection measurements were made on samples from ubiquitous crystalline process (UCP) Ingot 5848 - 13C. Important correlation was obtained between defect densities, cell efficiency, and diffusion length. Grain boundary substructure displayed a strong influence on the conversion efficiency of solar cells from Semix material. Quantitative microscopy measurements gave statistically significant information compared to other microanalytical techniques. A surface preparation technique to obtain proper contrast of structural defects suitable for quantimet quantitative image analyzer (QTM) analysis was perfected and is used routinely. The relationships between hole mobility and grain boundary density was determined. Mobility was measured using the van der Pauw technique, and grain boundary density was measured using quantitative microscopy technique. Mobility was found to decrease with increasing grain boundary density.

Natesh, R.↗
NASA NTRS1983

Growth and characterization of Czochralski-grown n and p-type GaAs for space solar cell substrates

Progress in LEC (liquid encapsulated Czochralski) crystal growth techniques for producing high-quality, 3-inch-diameter, n- and p-type GaAs crystals suitable for solar cell applications is described. The LEC crystals with low dislocation densities and background impurities, high electrical mobilities, good dopant uniformity, and long diffusion lengths were reproducibly grown through control of the material synthesis, growth and doping conditions. The capability for producing these large-area, high-quality substrates should positively impact the manufacturability of highly efficiency, low cost, radiation-hard GaAs solar cells.

Chen, R. T.↗
NASA NTRS1983

Models of the formation of the solar nebula

Protostellar cloud collapse and solar nebula formation models indicate that the size of the nebula produced will be larger in terms of both gas centrifugal balance R(CF) and collapse time diffusion length R(V). From this, it can be deduced that low mass nebulas are produced if (R(V)/R(CF))-squared is much greater than unity, while nebulas result for values lower than approximately unity. The total angular momentum value distinguishes most current models of the solar nebula. Analytic expressions for the surface density, nebular mass flux and photospheric temperature distributions during the formation stage are presented for simple modes illustrating and general properties of growing protostellar disks.

Cassen, P.↗
NASA NTRS1983

Correlation of solar cell electrical properties with material characteristics of silicon cast by the ubiquitous crystallization process

Solar cells were fabricated using a conservative 'baseline' process on 1-3 Omega-cm p-type silicon from ingots cast by the ubiquitous crystallization process. Conversion efficiencies of the cells were measured, as well as spectral response and minority carrier diffusion length. Adjacent slices from the same ingot were studied for their grain size, dislocation distribution, and impurity distribution. Cell performance was related to the observed structural features, as well as to the chemical structure of the ingot.

Hyland, S.↗
NASA NTRS1985

Gas Atmospheres Improve Silicon-Ribbon Quality

Growing crystal surrounded by gas containing carbon or oxygen. Ribbon of solid silicon, edgewise, grows from pool of molten silicon in die. Gases flowing through orifice ensure longer diffusion length and less contaminiation by carbide particles in product.

Wald, F. V.↗
NASA NTRS1983

Process Research On Polycrystalline Silicon Material (PROPSM)

The performance-limiting mechanisms in large-grain (greater than 1 to 2 mm in diameter) polycrystalline silicon solar cells were investigated by fabricating a matrix of 4 sq cm solar cells of various thickness from 10 cm x 10 cm polycrystalline silicon wafers of several bulk resistivities. Analysis of the illuminated I-V characteristics of these cells suggests that bulk recombination is the dominant factor limiting the short-circuit current. The average open-circuit voltage of the polycrystalline solar cells is 30 to 70 mV lower than that of co-processed single-crystal cells; the fill-factor is comparable. Both open-circuit voltage and fill-factor of the polycrystalline cells have substantial scatter that is not related to either thickness or resistivity. This implies that these characteristics are sensitive to an additional mechanism that is probably spatial in nature. A damage-gettering heat-treatment improved the minority-carrier diffusion length in low lifetime polycrystalline silicon, however, extended high temperature heat-treatment degraded the lifetime.

Culik, J. S.↗
NASA NTRS1984

Edge Stabilized Ribbon (ESR); Stress, Dislocation Density and Electronic Performance

The edge stabilized ribbon (ESR) silicon ribbon was grown in widths of 1, 2.2 and 4.0 inches at speeds ranging from .6 to 7 in/min, which result in ribbon thicknesses of 5 to 400 microns. One of the primary problems remaining in ESR growth is that of thermally induced mechanical stresses. This problem is manifested as ribbon with a high degree of residual stress or as ribbon with buckled ribbon. Thermal stresses result in a high dislocation density in the grown material, resulting in compromised electronic performance. Improvements in ribbon flatness were accomplished by modification of the ribbon cooling profile. Ribbon flatness and other experimental observations of ESR ribbon are discussed. Laser scanner measurements show a good correlation between diffusion length and dislocation density which indicates that the high dislocation densities are the primary cause of the poor current performance of ESR materials. Dislocation densities were reduced and improved electronic performance resulted. Laser scanner data on new and old material are presented.

Sachs, E. M.↗
NASA NTRS1984

A High-speed Characterization Technique for Solar Silicon

High-speed crystal growth techniques demand high-speed characterization techniques to allow a timely feed-back of information to the crystal growers. The unique properties of the Si electrolyte-contact (SEC) provide for an extremely fast and simple measurement of the light-induced photo-current for any piece of Si without lengthy preparation of the specimen. Electropolishing at high anodic current densities allows for insitu generation of fresh surfaces whereas preferential etching of defects in various modes is possible at low current densities. In n-type Si a simple estimation of the minority-carrier diffusion length is possible in many cases. Laser-scanning enables local probing of the photocurrent and provides data about the homogeneity of a sample. The experimental realization of the method is described in detail and examples are given and discussed.

Lehmann, V.↗
NASA NTRS1984

Optimal design of GaAs-based concentrator space solar cells for 100 AMO, 80 deg C operation

Using a detailed computer code and reasonable values of electrical and optical material parameters from current published literature, parameter optimization studies were performed on three configurations of GaAs-based concentrator solar cells for 100 AMO, 80 C operation. These studies show the possibility of designing GaAs-based solar cells with efficiencies exceeding 22% at 100 AMO 80 C and probable efficiency degradation of less than 15% after a 70% reduction in diffusion length in each cell region.

Goradia, C.↗
NASA NTRS1984

Radiation tolerance of low resistivity, high voltage silicon solar cells

The radiation tolerance of the following three low resistivity, high voltage silicon solar cells was investigated: (1) the COMSAT MSD (multi-step diffused) cell, (2) the MinMIS cell, and (3) the MIND cell. A description of these solar cells is given along with drawings of their configurations. The diffusion length damage coefficients for the cells were calculated and presented. Solar cell spectral response was also discussed. Cells of the MinMIS type were judged to be unsuitable for use in the space radiation environment.

Weizer, V. G.↗
NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗
NASA NTRS1984

Electron-beam induced current characterization of back-surface field solar cells using a chopped scanning electron microscope beam

A chopped electron beam induced current (EBIC) technique for the chacterization of back-surface field (BSF) solar cells is presented. It is shown that the effective recombination velocity of the low-high junction forming the back-surface field of BSF cells, in addition to the diffusion length and the surface recombination velocity of the surface perpendicular to both the p-n and low-high junctions, can be determined from the data provided by a single EBIC scan. The method for doing so is described and illustrated. Certain experimental considerations taken to enhance the quality of the EBIC data are also discussed.

Luke, K. L.↗